高性能升余弦滤波器设计

给出了一种适用于PHS基带系统中的高性能成形滤波器,对比两种实现方法在基带芯片中的性能,利用最少的非零比特位来表示符号数的编码技术即符号数（Canonic Sign Digit,CSD）。采用子结构共享技术改进数字滤波器结构,实现了2进制补码与CSD的转换和系统中升余弦Nyquist成形滤波器的ASIC设计,在TSMC 0．18μm工艺下进行了功能仿真、综合和后仿真。     

基于FPGA的FIR数字滤波器的优化设计

提出采用正则有符号数字量（CSD）编码技术实现FIR滤波器。首先分析了FIR数字滤波器理论及常用设计方法的不足,然后介绍了二进制数的CSD编码技术及其特点,给出了其于CSD编码的定点常系数FIR滤波器设计过程,使用VHDI,语言实现了该常系数滤波器的行为描述。最后在Max＋PlusⅡ环境下进行实验仿真和验证,与DA和2C编码算法比较结果表明,用CSD编码技术实现的滤波器可以有效提高运算速度并降低FPGA芯片的面积占用。     

基于FPGA的平方根升余弦滤波器设计

为了满足陆上集群无线电(TETRA)数字集群系统对基带信号成形处理的要求,提出了一种用于TETRA数字集群系统的平方根升余弦(SRRC)滤波器设计,论述了基带成形滤波和SRRC滤波器的基本原理,分析了窄带调制带宽限制、TETRA邻道干扰限制和滤波器阶数等需解决的问题,论述了滤波器参数设计和FIR滤波器FPGA实现等关键技术,完成了对基于FPGA的SRRC滤波器设计的仿真分析。     

基于可重构FPGA技术的自适应FIR滤波器的实现

有限冲激响应(FIR)滤波器设计遇到的难题是滤波要进行大量乘法运算,即使是在全定制的专用集成电路中也会导致过大的面积与功耗.对于用硬件实现系数是常量的专用滤波器,可以通过分解系数变为应用加、减和移位而实现乘法.FIR滤波器的复杂性主要由用于系数乘法的加法器/减法器的数量决定.而对于自适应FIR滤波器,大多数场合下可用数字信号处理器(DSP)或CPU通过软件编程的方法来实现,但是对于要求高速运算的场合,VLSI实现是很好的选择.基于这一考虑,可以用符号数的正则表示(CSD)码表示系数, 再利用可重构现场可编程门阵列(FPGA)技术实现.可重构结构的应用,能保证系统的其余部分同时处于运行状态时实现FIR滤波器系数的更新.文中利用CSD码和可重构思想,提出了用FPGA实现自适应FIR滤波器的一种方案.     

基带成形滤波器的数字设计与实现

根据基带成型滤波器的工作原理,文中设计出了一种基带成型滤波器的数字实现方案。该方案首先运用MATALB仿真工具得到信号基带成型后的仿真数据,并将仿真数据存储在FPGA中,然后通过查表操作实现了数字基带成型滤波器的功能。文中还给出了通过MODELSIM得到的信号基带成型后的仿真结果,仿真结果表明,由该方案所设计的基带成型滤波器可以很好地完成通信系统中信号的成型特性。     

阶数可变的成形滤波器FPGA实现

成形滤波器是数字通信中核心模块之一。在通信信号设计中,由于信号的不同,相应的成形滤波器也不同,介绍了一种阶数可变的成形滤波器的实现方法。采用这种方法实现的成形滤波器具有很强的灵活性,可以针对不同基带成形波形、滤波器阶数等参数在系统中方便地修改。符合数字通信软件化的趋势,也将在软件无线电中得到广泛的应用。     

数字接收机中位同步器的研制

位同步器在通信系统中有重要的作用,直接影响接收机的性能。基带成形滤波器对信号频谱进行压缩时,利用个位同步器消除码间干扰和提高系统频带利用率。本文为升余弦成形滤波器的数字接收机设计出一种简单可行的位同步器,并通过仿真验证了其简单性和可行性。     

一种新的对称FIR内插滤波器结构及其在WCDMA中的应用

该文提出了一种新的通过构造辅助滤波器组来利用原型滤波器的对称特性的方法,并且提供了一种实用的实现方法,便于在FPGA,DSP或现有的商用数字滤波器中实现。这种结构在第三代移动通信系统的开发过程中被用于实现WCDMA中的64阶基带成形滤波器。     

高速成形滤波器的研究与实现

在现代通信传输系统中,数字信号传输信道的带限和非线性两大特性对发送信号的频谱也提出了较高要求,基带成形滤波器发挥着越来越重要作用。本文阐述了成形滤波的基本原理,采用多相结构设计FIR成型滤波器并采用FPGA实现,运用Matlab、modelsim和Quartus II建模与仿真软件对该方案进行了开发、仿真和验证,解决了实际高速处理数据的硬件限制问题。     

高速∑-ΔDAC中插值滤波器的设计

基于ISO/IEC18000-6C协议设计了一种最高工作频率为48 MHz可用于UHF RFID系统的∑-ΔDAC的插值滤波器。该滤波器采用级联补偿滤波器、半带滤波器和级联积分梳状(CIC)滤波器的系统结构以降低设计复杂度。基于正则符号编码(CSD)技术将前两级滤波器中的乘法运算转化为移位相加以降低功耗和面积。同时,对CIC滤波器进行结构优化,进一步降低功耗。整个设计在MATLAB下完成系统仿真,并经过代码仿真、逻辑综合、布局布线等一系列数字流程。整个滤波器用标准0.18μm CMOS工艺实现,核心芯片面积小于0.52 mm2功耗约为5 mW。经仿真验证,满足性能要求。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.