液晶显示模块QH2001在堆中子活化自动辐照系统中的应用

介绍了点阵式液晶显示器在堆中子活化自动辐照系统中的应用方法，给出了用该液晶显示器与飞利浦P89C669单片机的硬件接口电路，以及软件设计方法，并给出了显示汉字和字符所必须的一些基本子程序。结果表明QH2001能满足我们的要求。     

高级微机ISA总线上的多功能接口板

介绍了一个应用于Pentium机型上ISA总线的接口电路，这个接口电路具有高速度，高可靠性的特点，是为光谱测量与能级寿命测量装置的控制及数据获取系统专门设计研制的。     

热释光仪的微机控制

图1为热释光仪的方框图,它由探测器、光能转换、采样接口、Z80单板机、控制接口、加热系统、显示器和微型打印机等部分组成。磷光体A被加热,在一定的温度下释放出热释光,探测器的光路系统吸收此光并转换成电流,再将此电流变换为频率送入采样接口,经采样接口缓冲后把数     

技术转让

电脑信息显示器(86401) 该产品采用载波电路,利用计算器作显示器,信息源通过交流电源线作传输线路,具有高度的保密功能。在各大城市和信息联络站及中心,安装该显示器很方便,很快就可获得和传输各种信息,也可以作报社、电台的新闻传送器,可用在上级单位与下级单位间作数据统计和汇报各种统计资料。可作办公设备。     

一个VME总线接口电路

简要介绍了一个VME总线接口电路，该接口电路是为一个中能核反应实验系统多参数数据获取系统的TRIGGER设计研制的。该接口电路可支持32位单周期传输和链式块数据传输（即CBLT传输方式）。     

核医学数据获取动态存储器的设计

介绍了核医学图像数据获取的基本方法和与计算机的接口，重点介绍接口中数据获取动态存储器的设计，给出了硬件电路和设计原理。     

用于非接触式核测量的红外通信接口的设计

介绍了一种简易、低成本的PC机与单片机进行红外通信方式,并介绍了相应的接口电路。该方法可用于多机通信。     

基于ARM920T的HIRFL-CSR前端总线控制器FBC-01

本文论述用于兰州重离子加速器冷却存储环(HIRFL-CSR)控制系统的前端总线系统控制器FBC-01的硬件设计.该控制器是基于0.8 mmBGA封装的AT91RM9200(ARM9)处理器,运行嵌入式LINUX操作系统.控制器可以连接标准的VGA显示器、键盘、鼠标,具有通用的10M/100M以太网接口、USB接口、RS-232接口、485接口、CANBUS接口.可以带SD卡、CF卡存储器.该控制器采用现场可编程的FPGA器件设计背板接口,并采用具有64 mA高驱动能力的总线驱动器,不仅符合VME规范的电气要求,而且具有灵活的接口信号定义可编程能力,是HIRFL-CSR控制系统的关键部件.     

基于C8051F124的高稳定性脉冲幅度分析电路的设计

脉冲幅度分析技术在核辐射测量中是-个关键问题.文章介绍一种基于C8051F124单片机的高稳定性脉冲幅度分析电路的设计,主要包括线性脉冲放大器、甄别控制电路、MCU系统和USB(U-niversal Serial Bus)接口电路.选用USB接口,使得系统安装简单,便捷易用.     

利用TP3465实现多路串行通信的接口设计

简要介绍了在控制接口电路的设计中利用MICROWIRE同步串行通信接口芯片TP3465(MID)实现微机与多路外设之间的通信。并结合具体的应用给出了控制接口的软硬件实现。     

Development of a transparent single-grid-type micro-strip gas chamber based on LCD technology

The liquid crystal display (LCD) technology allows several simple circuits to be built using thin film transistors, thus making fabrication of compact, integrated, large-area, and low-cost micro-pattern gaseous detectors possible. In this work, a single-grid-type micro-strip gas chamber (S-MSGC) using transparent electrodes based on the LCD technology was fabricated and successfully operated in several gas mixtures. The detector was coupled with a multi-pixel photon counter to detect an optical signal through the transparent substrate in Ar/CF₄ gas. Both electrical and optical signals were measured and the light yield of the detector was acquired. Successful operation of the S-MSGC can be considered the very important first step for development of the next target of integrated devices.     

单片机在高精度磁铁稳流电源智能化接口中的应用

介绍了自行研制的高精度稳流电源智能化接口中单片机的应用。将高容量、多功能、高输出能力的PIC16F877单片机分别应用在大功率高精度磁铁电源接口的主控模块和操作面板上,可以大幅度提高智能化接口的性能。研制成功的两体式智能化接口具有体积小、造价低、抗干扰能力强、可嵌入到电源机箱内等优点。     

基于单片微机的核能谱数据采集系统研究

介绍了以单片机AT89C55为控制核心的核物探能谱数据采集系统。利用单片微机系统的功耗低、可靠性高、可独立为一个简单的微机系统的特点实现了数据采集系统的微机化。该数据采集系统配有大屏幕点阵液晶显示器,按键输入,汉字人机对话,界面友好。     

Design & construction of a digital real time reactivity meter for Tehran research reactor

Reactivity measurement is one of the challenges of monitoring, control and investigation of nuclear reactors. In this paper design and construction of a reactivity meter for continuous monitoring of reactivity in research reactors are described. The device receives amplified output of the fission chamber, which is in mA range, as the input. Using amplifier circuits, this current is converted to voltage and then digitalized with a microcontroller to be sent to serial port of computer. The device itself consists of software, which is a MATLAB real time programming for the computation of reactivity by the solution of neutron kinetic equations. After data processing the reactivity is calculated and presented using LCD. Tehran research reactor is selected to test the reactivity meter device. The results of applying this reactivity meter in Tehran research reactor (TRR) are compared with the experimental data of control rod worth, void coefficient of reactivity and reactivity changes during approach to full power. The maximum relative error in several experiments is calculated to be 13%.     

FPAA在物理电子学中的应用

简要介绍了FPAA的发展现状、工作原理和特点。并结合具体芯片AN221E04分别给出了它的两种配置方式，还分析了它的模拟信号输出、输入接口电路在物理电子学中的应用。最后完成了在Anadigm Designer2中的仿真。     

Evaluation and Compensation of Digital Switching Circuits in Transient Radiation Environments

A method for determining the degree of vulnerability of a general digital switching circuit to intense bursts of radiation is presented. Emphasis is placed upon the ability of the circuit to maintain a desired state, rather than on the switching process itself. The advantages and disadvantages of added compensation are discussed. Application is made of the preceding theory to contemporary circuits, and reproductions of actual test results are presented to support this theory. The final section is a discussion of some additional considerations that are introduced when radiation bursts of short duration are concerned.     

阵列式低功耗Si-PIN个人剂量仪设计

采用瑞士TEVISO的阵列式Si-PIN探测器探测X、γ射线;以低功耗PIC单片机为核心,设计了低功耗电源转换电路、一键开关机电路、按键与LCD显示、蜂鸣器等,并采用多种单片机软件设计方法降低功耗。该个人剂量仪具有脉冲计数、剂量当量率实时显示及存储,可查看测量时间与历史数据,报警阈值设置与报警等功能。     

一种新的便携式瞬时土壤测氡仪的研制

设计一套基于静电收集法的双道瞬时土壤测氡仪。采用单片机作为数据处理与控制单元，能在测量现场得出氡浓度测量结果。压强测量系统用于氡浓度校正；双道甄别器用于扣除RaA外的其他氡子体造成的干扰；LCD显示器提供友好人机界面；基于MCU的独立编码键盘方便用户对仪器进行操控与各种功能设置。该仪器具有体积小、成本低、探测灵敏度高等特点。     

Gamma Discrimination and Sensitivities of Averaging and RMS Type Detector Circuits for Campbelling Channels

Experiments are described in which the performance of a linear type detector circuit is compared with a mean square type detector circuit for Campbell measurements. The need for pulse overlap is demonstrated for the linear type detector which requires a minimum angular cutoff frequency, ?L, equal to the lowest desired pulse rate. Measurements with the two types of detector circuits in a high gamma background and measurement of gamma and neutron sensitivities indicate a gamma discrimination figure of merit of 5 R per hr./nv. Application of counting and Campbelling techniques to a single ten decade log channel is described along with an electronic combining circuit for producing a single continuous output of such a channel.     

CMOS Shift Register Circuits for Radiation-Tolerant VLSI's

A radiation-tolerant VLSI circuits investigation has been carried out using CMOS/SOS shift registers. Static and dynamic circuit performance degradation is discussed, based on MOS FET parameter shifts due to radiation effects, utilizing ?-ray irradiation and SPICE simulation. Functionality, after radiation doses in excess of 105; rad (Si), is shown for circuits fabricated by radiation-hardened process. Radiation-tolerance superiority of clocked gate CMOS (C2MOS) shift register circuits to transfer gate shift register circuits is discussed, placing emphasis mainly on radiation-bias effects. Based on the above results, the C2MOS is proposed for use in radiation-tolerant SOS VLSI circuits.