共查询到19条相似文献,搜索用时 500 毫秒
1.
本文基于光伏电池数学模型,建立了光伏电池仿真模型.该模型能准确反映光伏电池的输出特性,而且参数调节方便.在不同的串联电阻和日照强度变化条件下,对光伏电池输出特性理论分析的基础上,建立实现最大功率跟踪(MPPT)的控制模型,仿真结果证明光伏电池的输出特性呈非线性,并随串联电阻和日照强度的变化而变化.为克服光伏电池输出功率... 相似文献
2.
3.
4.
采用超高频等离子增强化学气相沉积(VHF-PECVD)技术,逐次高速沉积非品硅顶电池及微晶硅底电池,形成pin/pin型非晶硅/微晶硅叠层电池.通常顶电池的n层与底电池的P层均采用微晶硅材料来形成隧穿复合结,然而该叠层电池的光谱响应测试结果表明,顶电池存在着明显的漏电现象.针对该问题作者提出,在顶电池的微品硅n层中引入非晶硅n保护层的方法.实验结果表明,非晶硅n层的引入有效地改善了顶电池漏电的现象;在非晶硅n层的厚度为6nm时,顶电池的漏电现象消失,叠层电池的开路电压由原来的1.27提高到1.33V,填允因子由60%提高剑63%. 相似文献
5.
6.
采用超高频等离子增强化学气相沉积(VHF-PECVD)技术,逐次高速沉积非品硅顶电池及微晶硅底电池,形成pin/pin型非晶硅/微晶硅叠层电池.通常顶电池的n层与底电池的P层均采用微晶硅材料来形成隧穿复合结,然而该叠层电池的光谱响应测试结果表明,顶电池存在着明显的漏电现象.针对该问题作者提出,在顶电池的微品硅n层中引入非晶硅n保护层的方法.实验结果表明,非晶硅n层的引入有效地改善了顶电池漏电的现象;在非晶硅n层的厚度为6nm时,顶电池的漏电现象消失,叠层电池的开路电压由原来的1.27提高到1.33V,填允因子由60%提高剑63%. 相似文献
7.
8.
硅基薄膜太阳电池研究进展 总被引:1,自引:0,他引:1
硅基薄膜电池主要包括氢化非晶硅电池、氢化微晶硅电池、多晶硅薄膜电池以及硅薄膜叠层电池.本文归纳了硅基薄膜材料和器件的微观结构、光学和电学特性,讨论了硅基薄膜电池性能的优化设计,并介绍了近期的研究进展情况,比如,氢化非晶硅抗反射涂层、晶粒为几个纳米的微晶硅材料、中间插入反射层的新型叠层电池结构以及具有高稳定性的多晶硅薄膜电池CSG. 相似文献
9.
10.
11.
Light trapping is one of the key issues to improve the light absorption and increase the efficiency of thin film solar cells. The effects of the triangular Ag nanograting on the absorption of amorphous silicon solar cells were investigated by a numerical simulation based on the finite element method. The light absorption under different angle and area of the grating has been calculated. Furthermore, the light absorption with different incident angle has been calculated. The optimization results show that the absorption of the solar cell with triangular Ag nanograting structure and anti-reflection film is enhanced up to 96% under AM1.5 illumination in the 300–800 nm wavelength range compared with the reference cell. The physical mechanisms of absorption enhancement in different wavelength range have been discussed. Furthermore, the solar cell with the Ag nanograting is much less sensitive to the angle of incident light. These results are promising for the design of amorphous silicon thin film solar cells with enhanced performance. 相似文献
12.
考虑到nip型[ITO/a-Si(n)/a-Si(i)/a-Si(p)/Al]非晶硅光伏电池的各膜层厚度、掺杂浓度等因素,对非晶硅光伏电池的转换效率、填充因子、开路电压等性能参数进行了数值分析与讨论。结果表明,随p型层厚度的增加,光伏电池的短路电流密度、转换效率、开路电压值都有所增加。当本征层的厚度增加时,短波段内的光谱响应变差、内量子效率下降。当n型层厚度为5 nm,本征层厚度为5 nm,p型层厚度为10μm,受主掺杂浓度为2.5×1019cm-3,施主掺杂浓度为1.5×1016cm-3时,转换效率可达9.728%。 相似文献
13.
14.
Silicon heterojunction solar cell: a new buffer Layer concept with low-temperature epitaxial silicon
Centurioni E. Iencinella D. Rizzoli R. Zignani F. 《Electron Devices, IEEE Transactions on》2004,51(11):1818-1824
Amorphous silicon/crystalline silicon heterojunction solar cells, deposited by the plasma-enhanced chemical vapor deposition (PECVD) technique, have been fabricated using different technologies to passivate defects at the heterointerface: without treatment, the insertion of a thin intrinsic amorphous layer or that of a thin intrinsic epitaxial layer. The open circuit voltage of heterojunction solar cells fabricated including an intrinsic amorphous buffer layer is strangely lower than in devices with no buffer layer. The structure of the amorphous buffer layer is investigated by high resolution transmission electron microscope observations. As an alternative to amorphous silicon, the insertion of a fully epitaxial silicon layer, deposited at low temperature with conventional PECVD technique in a hydrogen-silane gas mixture, was tested. Using the amorphous silicon/crystalline silicon (p a-Si/i epi-Si/n c-Si) heterojunction structure in solar cells, a 13.5% efficiency and a 605-mV open circuit voltage were achieved on flat Czochralski silicon substrates. These results demonstrate that epitaxial silicon can be successfully used to passivate interface defects, allowing for an open circuit voltage gain of more than 50 mV compared to cells with no buffer layer. In this paper, the actual structure of the amorphous silicon buffer layer used in heterojunction solar cells is discussed. We make the hypothesis that this buffer layer, commonly considered amorphous, is actually epitaxial. 相似文献
15.
16.
采用射频等离子体增强化学气相沉积(RF-PECVD)技术制备非晶硅(a-Si)NIP太阳能电池,其中电池的窗口层采用P型晶化硅薄膜,电池结构为Al/glass/SnO2/N(a-Si:H)/I(a-Si:H)/P(cryst-Si:H)/ITO/Al.为了使P型晶化硅薄膜能够在a-Si表面成功生长,电池制备过程中采用了H等离子体处理a-Si表面的方法.通过调节电池P层和N层厚度和H等离子体处理a-Si表面的时间,优化了太阳能电池的制备工艺.结果表明,使用H等离子体处理a-Si表面5 min,可以在a-Si表面获得高电导率的P型晶化硅薄膜,并且这种结构可以应用到电池上;当P型晶化硅层沉积时间12.5 min,N层沉积12 min,此种结构电池特性最好,效率达6.40%.通过调整P型晶化硅薄膜的结构特征,将能进一步改善电池的性能. 相似文献
17.
In order to investigate the effects of a back surface field (BSF) on the performance of a p-doped amorphous silicon (p-a-Si:H)/n-doped crystalline silicon (n-c-Si) solar cell, a heterojunction solar cell with a p-a-Si:H/nc-Si/n+-a-Si:H structure was designed. An n+-a-Si:H film was deposited on the back of an n-c-Si wafer as the BSF.The photovoltaic performance of p-a-Si:H/n-c-Si/n+-a-Si:H solar cells were simulated. It was shown that the BSF of the p-a-Si:H/n-c-Si/n+-a-Si:H solar cells could effectively inhibit the decrease of the cell performance caused by interface states. 相似文献
18.
We present a new approach based on the multi-trench technique to improve the electrical performances, which are the fill factor and the electrical efficiency. The key idea behind this approach is to introduce a new multi-trench region in the intrinsic layer, in order to modulate the total resistance of the solar cell. Based on 2-D numerical investigation and optimization of amorphous SiGe double-junction (a-Si:H/a-SiGe:H) thin film solar cells, in the present paper numerical models of electrical and optical parameters are developed to explain the impact of the multi-trench technique on the improvement of the double-junction solar cell electrical behavior for high performance photovoltaic applications. In this context, electrical characteristics of the proposed design are analyzed and compared with conventional amorphous silicon double-junction thin-film solar cells. 相似文献
19.
采用Afors-het太阳能电池异质结模拟软件,模拟了在不同工作温度下微晶硅背场对a-Si(n)/c-Si(p)异质结太阳能电池性能的影响。结果表明,随着背场带隙的增加,开路电压和转化效率都增大。随着背场掺杂浓度的增加,开路电压、填充因子和转化效率都在不断地增加;随着背场厚度的增加,电池性能有所下降。随着电池工作温度的上升,微晶硅背场所对应的最佳浓度掺杂值和最佳厚度值变化不大。但是随着温度的上升,微晶硅背场所对应的最佳带隙值有明显的右移趋势。实验结果为电池的商业化生产提供了实验参数。 相似文献