X波段介质稳频电调FET振荡器

本文介绍了X波段介质稳频电调FET振荡器(FET DR VCO)的研制。采用反馈型电路结构,获得振荡频率为7774MHz,输出功率Po>10dBm,线性电调带宽>42MHz(功率变化△P<1dB),电调灵敏度为3.0MHz/V,在-20℃～+60℃范围内,频率温度稳定度<±5.7ppm/℃。     

功率管L波段宽带VCO的设计与实验

本文介绍一种实用的功率晶体管宽带压控振荡器(VCO)工程设计方法,电调电并采用此法设计了一种 L 波段 VCO。该 VCO 工作频率为740～860MHz,压控带宽在压0～-15V 变化时达200MHz,输出功率>40mW,输出不平稳度<1dB,文中还介绍了该 VCO 的实验调整方法。     

GaAs超突变结微波电调变容管

分析了p~+-n-n~+-n-n~(?)分布的低-高-低结构的GaAs超突变结电调变容管容压特性.采用汽相外延生长的低-高-低掺杂峰n-GaAs外延材料,SiO_2钝化扩散平面结,获得C_0(?)0.8～1.2pF、T_R≥7、V_B≥20V、Q_(-4)≥15的初步结果.适用于X波段固态电控振荡器作线性电调.     

X波段变容管调谐GaAs FET集成VCO的设计

本文介绍了一种宽带FET VCO的S参数设计理论和方法.根据这一理论和方法,用我所的低噪声小功率FET和电调变容管,研制成了X波段变容营调谐的GaAs FBT混合集成VCO.在8GHz频段内,获得500MHz的电调范围,在整个电调范围内,输出功率大于10mW,功率起伏小于0.5dB,直流转换效率大于10%,噪声性能与普通速调管相当,而且体积小,重量轻,成本低.     

X波段混合集成电调压控振荡器

本文介绍了一种高度线性化的X波段耿氏管压控振荡器(VCO)。文中讨论了使VCO线性化的电抗补偿原理并给出了用多节电抗网络补偿的VCO设计实例。实验结果为:在600MHz的频宽内,其线性度优于0.8％,电调斜率比小于1.2。     

一种K波段GaAs MESFET压控振荡器的设计

利用微波晶体管的负阻特性,基于Agilent ADS软件,设计出一种K波段微带结构、变容管调谐的MESFET压控振荡器(VCO)。对VCO进行实测．结果表明,VCO的中心频率为20.56GHz,调频带宽大于100MHz,带内输出功率大于2mW,相位噪声大于-90dBc／Hz@100kHz,满足实际应用。     

L波段宽电调压控振荡器

本文重点讨论了L波段压控振荡器调谐回路的设计。用这种方法研制的VCO在L波段已达到1dB带宽大于200MHz,3dB带宽大于500MHz的优良性能,并已用于卫星电视接收机二本振、气象雷达一本振等机器设备中。     

X波段砷化镓场效应振荡管

X波段GaAs场效应振荡管是一种专门用于各种微波固体振荡电路的新型器件,尤其对X波段GaAsFET电压控制振荡器(VCO)和介质谐振器振荡器(DRO)更为适合。 本文在对有关资料分析的基础上,提出了设计这一器件的基本原则;概述了器件的基本结构;介绍了器件的参数研究结果和电路应用情况。用该器件制作的X波段FET VCO,得到了800MHz以上的电调范围,在整个电调范围内,输出功率为30～50mW,功率起伏小于1.5dB。     

一种具有粗细调谐能力的FET VCO

<正>用微波场效应晶体管和砷化镓超突变结变容二极管组成的电压控制振荡器(简称FET VCO),具有调谐速度快,线性好,电路效率高,而且供电简单.使用南京电子器件研究所研制的场效应晶体管(WC59)和砷化镓电调变容二极管(WB62)制成的具有粗细调谐能力的FET VCO,粗调频率在C波段电调带宽600MHz,电调灵敏度的最大最小变化比小于     

基于负阻MMIC的新型VCO研制

提出了一种基于负阻单片微波集成电路的新型压控振荡器(VCO)的设计方法,即负阻电路采用GaAs HBT工艺设计流片,调谐选频电路采用薄膜混合集成工艺制作。利用微封装技术将二者结合构成完整的VCO。这种新型VCO既具有单片微波集成电路的小型化、低成本的优势,又保持了薄膜混合集成电路可灵活调试的特性。通过设计流片数款在不同频段的负阻单片微波集成电路,可完成频率1～18 GHz、小型化、系列化VCO的研制。X波段宽带VCO的实测结果显示,当电调电压在2～13 V变化时输出频率覆盖8～12.5 GHz,调谐线性度为2∶1,电调电压5 V时相位噪声为-96 dBc/Hz@100 kHz。     

A low-phase-noise LC-VCO with an enhanced-Q varactor for use in a high-sensitivity GNSS receiver

An LC-VCO with an enhanced quality factor(Q) varactor for use in a high-sensitivity GNSS receiver is presented.An enhanced A-MOS varactor is composed of two accumulation-mode MOS(A-MOS) varactors and two bias voltages,which show the improved Q and linearization capacitance-voltage(C-V) curve.The VCO gain(K_(vco)) is compensated by a digital switched varactors array(DSVA) over entire sub-bands.Based on the characteristics of an A-MOS,the varactor in a DSVA is a high Q fixed capacitor as it is switched off,and a moderate Q tuning varactor when it is switched on,which keeps the maximal Q for the LC-tank.The proposed circuit is fabricated in a 0.18μm 1P6M CMOS process.The measured phase noise is better than -122 dBc/Hz at a 1 MHz offset while the measured tuning range is 58.2%and the variation of K_(VCO) is close to±21%over the whole of the sub-bands and the effective range of the control voltage.The proposed VCO dissipates less than 5.4 mW over the whole operating range from a 1.8 V supply.     

A fully integrated 5.8 GHz U-NII band 0.18-/spl mu/m CMOS VCO

A fully integrated 5.8 GHz CMOS L-C tank voltage-controlled oscillator (VCO) using a 0.18-/spl mu/m 1P6M standard CMOS process for 5 GHz U-NII band WLAN application is presented. The VCO core circuit uses only PMOS to pursue a better phase noise performance since it has less 1/f noise than NMOS. The measurement is performed by using a FR-4 PCB test fixture. The output frequency of the VCO is from 5860 to 6026 MHz with a 166 MHz tuning range and the phase noise is -96.9 dBc/Hz at 300 kHz (or -110 dBc/Hz at 1 MHz) with V ctrl = 0 V. The power consumption of the VCO excluding buffer amplifiers is 8.1 mW at V/sub DD/ = 1.8 V and the output power is -4 dBm.     

A K-band InGaP/GaAs HBT balanced MMIC VCO

A fully integrated K-band balanced voltage controlled oscillator (VCO) is presented. The VCO is realized using a commercially available InGaP/GaAs heterojunction bipolar transistor (HBT) technology with an f/sub T/ of 60 GHz and an f/sub MAX/ of 110 GHz. To generate negative resistance at mm-wave frequencies, common base inductive feedback topology is used. The VCO provides an oscillation frequency from 21.90 GHz to 22.33 GHz. The frequency tuning range is about 430 MHz. The peak output power is -0.3 dBm. The phase noise is -108.2 dBc/Hz at 1 MHz offset at an operating frequency of 22.33 GHz. The chip area is 0.84/spl times/1.00 mm/sup 2/.     

Dynamic voltage stress effects on nMOS varactor

The degradations in the nMOS device due to high-frequency (900 MHz) dynamic stress are shown experimentally. The stress-induced shifts in DC and larger-signal C-V characteristics are presented. Although the high-frequency stress-induced degradations are much smaller than DC stress, the effects on C-V curves and quality factor cannot be neglected. An nMOS LC oscillator, wherein the varactor is operated under the same dynamic bias conditions as in the stress experiment, has been evaluated through Cadence Spectre simulation. The performance of the LC oscillator degrades significantly due to the dynamic stress.     

Material and process considerations for monolithic low-1/f-noise transistors

Oxide passivation, substrate orientation, transistor geometry, current density, and hFEwere evaluated for their effect on the 1/f noise spectrum of monolithic transistors. For verification of previous findings correlating 1/f noise with surface-state density, C-V measurements were made at 260 Hz and 0.1 MHz. Transistors fabricated on     

Cross-coupled differential oscillator MMICs with low phase-noiseperformance

LC-tank oscillators in the 5~6 GHz frequency range have been designed and implemented in a commercial 0.6 μm GaAs MESFET technology. One is a voltage-controlled oscillator (VCO), and the other is an oscillator without a controlling element. The output frequency range of the VCO is from 5.44 to 6.14 GHz, and the measured phase-noise is -101.67 dBc/Hz at an offset frequency of 600 KHz from the 5.44 GHz carrier. The phase-noise of the 6.44 GHz oscillator is -108 dBc/Hz at an offset frequency of 600 KHz, and the phase-noise curve, in the offset frequency range between 100 KHz and 1 MHz, shows a -20 dB/decade slope. These phase-noise characteristics are comparable to, or better than, those of the reported 5~6 GHz-band CMOS oscillators. To our knowledge, this is the first GaAs MESFET-based oscillator which has a cross-coupled differential topology and a capacitive coupling feedback to suppress the up-conversion of 1/f noise. Also, it is first reported that the GaAs MESFET-based oscillator shows 1/f² phase-noise behavior across the offset frequency range from 100 KHz to 1 MHz     

4.2GHz 1.8V CMOS LC压控振荡器

基于Hajimiri提出的VCO相位噪声模型,分析了差分LC VCO电路参数对于相位噪声的影响。根据前面的分析,详细介绍了LC VCO电路的设计方法:包括高Q值片上电感的设计、变容MOS管的设计以及尾电流的选取。采用SMIC 0.18μm 1P6 M、n阱、混合信号CMOS工艺设计了一款4.2GHz 1.8V LC VCO。测试结果表明:当输出频率为4.239GHz时,频偏1MHz处的相位噪声为-101dBc/Hz,频率调节范围为240MHz。     

A 900-MHz 1.5-V CMOS voltage-controlled oscillator using switched resonators with a wide tuning range

A 900-MHz fully integrated VCO was fabricated in a 0.18-/spl mu/m foundry CMOS process. Under 1.5 V power supply, this VCO can be tuned from 667 MHz to 1156 MHz which corresponds to a 53.6% tuning range. The VCO has nearly constant phase noise over the whole tuning frequency, credit to the switched resonators used in this VCO. The phase noise at a 600 kHz offset is -123.1 dBc/Hz at 1125 MHz center frequency and -124.2 dBc/Hz at 667 MHz center frequency.     

Low noise 5 GHz differential VCO using InGaP/GaAs HBT technology

The authors present the first InGaP/GaAs HBT differential VCOs with low phase noise performance. One is a cross coupled differential VCO, and the other is a Colpitts differential VCO. To achieve a fully integrated VCO, collector-base junction capacitance of HBT transistor is used for the frequency tuning varactor. The measured output frequency ranges of VCOs are 290 MHz and 190 MHz, and the phase noises at an offset frequency of 1 MHz are -118 dBc/Hz and -117 dBc/Hz respectively. The each VCO core dissipates 13.2 mW from a 3.5 V supply, and the output power is about -0.2 dBm. Concerned with cross coupled VCO, it shows the figure of merit of -179 dBc/Hz, which is the best result among the reported compound semiconductor FET and HBT VCOs.     

常γ砷化镓电调变容二极管设计与实验研究

电调变容管的C—V特性取决于外延层掺杂浓度分布。为了获得常γC—V特性,外延层掺杂浓度分布应为幂函数。本文假设了一种与实际常γ外延材料掺杂浓度分布比较接近的浓度分布函数,导出了C—V计算公式,并给出器件设计方法。采用平面扩散管芯结构,制得了γ=1和1.25的GaAs电调变容二极管,在2～18GHz宽带线性压控振荡器中获得了满意的使用结果。