基于小波变换相干积累的微弱信号检测

在低信噪比下检测信号的方法倍受关注。本文提出基于小波变换的信号相干积累方法。利用小波变换的子带编码理论，通过在多个子带中进行相干积累。积累后的信号再用周期谱方法进行估计，证明该方法可进一步改善信号的检测能力。文中以脉冲雷达回波信号和相位码信号为例。仿真结果表明，这种方法能在-19db信噪比(雷达回波)和-22db信噪比(相位码信号)下检测信号。     

强噪声背景下的信号检测

在低信噪比下检测信号的方法备受关注。利用周期谱估计方法能在较低的信噪比下检测信号。本文提出基于小波包去噪的周期谱测量方法。该方法可进一步改善信号的检测能力。文中以相位码信号争以电视为发射信号的无源相干定位系统的回波信号为例，应用小波去噪和周期谱方法进行仿真。仿真结果表明，这种方法能在-21dB信噪比(相位码信号)和-14．5dB信噪比(电视信号)下检测信号。     

OTHR低信噪比下的机动目标检测算法

在天波超视距雷达(OTHR)中,采用短时间相干积累时,可以提高数据率和检测效能,减小电离层污染。但采用短时间相干积累时,目标信噪比往往较低,检测难度较大,而机动目标的多普勒扩展进一步增加了目标的检测难度。传统的机动目标检测算法利用基于高阶模糊函数(HAF)的多普勒补偿算法来提高机动目标的可检测性,但由于HAF多次用到非线性变换,而每次非线性变换都会损失部分信噪比,因此对输入信噪比要求较高,难以适应于更低信噪比环境下的机动目标检测。将机动目标回波建模为三阶多项式相位信号,采用一种低非线性度的运动参数估计方法并结合多普勒补偿算法对目标回波进行处理,仅需要一次相位降阶操作,减少了信噪比损失,降低了对输入信噪比的要求。经过仿真验证,该算法的输入信噪比门限为-3dB,而HAF算法的输入信噪比门限为3dB。     

一种频率步进雷达目标运动参数估计方法

为实现低信噪比下目标的精确运动补偿,提出基于Keystone变换和Morlet小波变换的方法估计低信噪比下目标速度和初始距离参数。在分析频率步进雷达运动目标回波信号基础上,首先采用Keystone变换法去除回波信号高次相位项,然后对回波信号做IFFT运算,再进行FFT 操作,便可得到距离-速度二维参数谱。考虑低信噪比对参数估计的影响,文中将距离维参数谱通过Morlet小波变换去除噪声,进而获得目标运动参数的精确估计。最后计算机仿真实验进一步说明了该方法的有效性。     

Harr小波在BPSK信号检测中的应用

BPSK(二进制相移键控)信号相位突变点的检测是BPSK信号处理的一个重要特征,尤其在低信噪比情况下,对相位突变点的检测更加困难。文中利用Harr小波对含噪声的BPSK信号进行小波变换,利用BPSK信号在Harr小波变换下的特性很容易从小波系数中得到BPSK信号的基带信号。     

基于小波变换人体生命参数探测方法

探讨了使用小波变换对人体生命参数检测。其基本原理是利用电磁波照射人体,其回波信号被人体生命活动引起的体表微动(如呼吸、心跳)调制后,使得回波信号的某些参数(如频率、相位)发生改变,通过小波变换技术检测回波信号参数的变化提取出人体生命参数。重点研究了小波变换方法在人体生命参数检测和识别中的应用。     

基于小波变换的MSK信号码速率盲估计

针对最小频移键控调制信号的码速率估计问题,提出一种基于Haar小波变换的MSK信号码速率盲估计方法。首先对接收信号作傅里叶变换得到信号频谱,对频谱频点分析粗估计信号的码速率,接着通过粗估计的码速率选取短时傅里叶变换窗函数长度和3个小波尺度,利用短时傅里叶变换得到信号瞬时频率变化,再利用小波的边缘检测特性对信号瞬时频率序列相位跳变点检测,最后对检测结果作频谱分析,估计频率得到MSK信号的码速率。仿真结果表明,高于信噪比门限时本算法可以对MSK信号码速率有效估计。     

基于小波变换的可见光通信系统码间干扰抑制技术

码间干扰直接影响可见光通信系统的通信性能,当前的应对方法存在一定的不足,为了实现系统信号稳定传输,文章采用基于小波变换的可见光通信系统码间干扰抑制技术,在分析可见光通信系统信道模型和信号多径特征基础上,利用小波变换将系统回波数据频谱变换到小波域,在小波域内通过恒虚警概率方法识别码间干扰小波系数,构建码间干扰小波系数的恒虚警检测器,将小波系数大于检测门限的码间干扰去除,实现对可见光通信系统码间干扰的抑制。实验结果表明,该方法的信号干扰抑制比和信号失真比均较低,可提高可见光通信系统的输出信噪比,有效抑制码间干扰对系统信号频谱的影响,保证系统信号传输稳定性。     

基于FRFT的雷达微弱目标信号检测算法

针对低信噪比下雷达目标回波检测的问题,提出对回波预处理后接分数阶傅里叶变换的检测方法。预处理为AR滤波器抑制杂波并用小波去噪。由于低信噪比下分数阶傅里叶变换检测性能低,对回波做预处理提高回波信噪比。再运用分数阶Fourier变换对LFM信号的聚敛性质检测。仿真结果表明,文中提出算法检测性能优于直接进行分数阶傅里叶变换。     

一种新型超声信号消噪技术及其DSP实现

为了提高超声无损检测和无损评价中基础数据的信噪比,利用小波变换多分辨率性能实现对超声信号的消噪.将原始超声回波信号进行小波域子带分解后,按照一定的规则对细节信号进行软阈值处理,然后根据概貌信号和处理后的细节信号重构原信号,从而消除了噪声,达到提高信噪比的目的.该方法在DSP上进行了实现,实验结果表明,该方法增强了消噪性能的稳定性,提高了超声回波信号的信噪比.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.