一种高性能的嵌入式微处理器:银河TS-1

银河TS-1嵌入式微处理器是国防科学技术大学计算机学院设计的32位嵌入式微处理器,完全正向设计,具有自主版权.在体系结构上采用RISC内核,六级流水线,具有独立的数据Cache和指令Cache.特别的,TS-1具有两个取指部件的动态指令调度机制,拥有面向嵌入式应用的向量处理机制,采用基于内容复制/交换的寄存器窗口技术的中断处理机制,支持WISHBONE IP核互连接口规范,具有良好的扩展性.本文主要介绍TS-1的RISC核心设计思想和关键实现技术,最后给出性能评测结果.TS-1设计已经在Altera的FPGA EP20K400EBC上面得到了验证,主频可以达到36.7MHz.     

传统CISC CPU和MPC向RISC靠拢以提高性能

为了提高性能,传统的CISC处理器正在采用RISC某些特性.这类CISC处理器包括历史悠久的x86系列和用于嵌入式控制的各种处理器.这些处理器现在加入了全RISC结构的CPU行列,其性能高达数百MIPS.上个月在加州Burlingame举行了微处理器研讨会.得克萨斯州Austin的Advanced Micro Devices(AMD)公司和加利福尼亚州Milpitas的NexGen公司在会上介绍了它们研制的Intel Pentium兼容型微处理器.这些芯片的核心均是RISC CPU,运行自已独有的RISC指令系统.虽然从外部表现来看它们是在执行x86指令系统,但其性能比相同时钟频率的Pentium处理器高出30%.     

压缩32位程序码密度的良方

由于嵌入式系统日益复杂,因而32位RISC微处理器越来越流行。 32位RISC微处理器最初主要用于计算密集型系统如图形引擎。Hi-tachi公司的 Super-H RISC Engine(SH系列)采用简单的RISC结构来减小芯片面积和功耗,为控制密集型的单片应用如电机控制提供32位的能力。 由于在单片应用中,芯片上的存储器是最重要的资源,所以程序码的密度是一个关键问题。与常规 RISC结构的     

ARM及其嵌入式微处理器设计技术

英国ARM(Advanced RISC Machines)公司是32位RISC微处理器设计公司,专门从事以下4项业务:(1)32位RISC MPU设计服务;(2)向LSI制造商提供ARM微处理器机芯嵌入应用服务;(3)销售各种软件和芯片开发软件工具;(4)向LSI制造商提供ARM微处理器机芯嵌入式应用设计咨询服务。     

32位嵌入式RISC处理器的硬件验证

随着ASIC技术的不断发展，设计规模及复杂程度不断增加，前端设计的准确性对整个系统的重要性越来越大。因此，在前端设计中，除了进行软件仿真外，还需要进行硬件验证。文章采用Aptix公司提供的MP3CF硬件仿真器，构建了一个实时验证系统，对自行设计的32位嵌入式RISC微处理器进行了在线硬件验证。     

NiosⅡ系列嵌入式处理器资源耗用减半性能翻番

5年前，Altera推出第一代16位Nios处理器为公司开辟了新的应用领域和市场。目前已交付的Nios开发套件达13，000多套，并成为FPGA软核处理器的标准，Nios处理器也因此被EDN杂志评为“2003年100个热点产品”之一。今天Altera公司又推出NiosⅡ系列32位RISC嵌入式处理器．     

基于ARM的工业以太网控制系统智能节点的设计

文章介绍了一种适用于工业以太网现场总线控制系统智能节点的软、硬件设计方法。该方法采用基于ARM核的 32位嵌入式RISC微处理器作为硬件平台 ,运行基于特定应用的嵌入式实时操作系统 (ASOS) ,可完全满足工业现场对实时性和可靠性的要求。     

利用Aptix硬件仿真器对32位RISC处理器的硬件验证

随着ASIC技术的不断发展，设计规模及复杂程度也不断增加，前端设计的准确性对整个项目的重要性越来越大，因此，在前端设计中，除了进行软件仿真外，还需要进行硬件验证。本文介绍了一种不同于通常利用FPGA板下载进行仿真的硬件仿真方法，而是采用Aptix公司提供的MP3C硬件仿真器对自行设计的32位嵌入式RISC微处理器进行硬件验证。     

编辑观点

十几年前,拥有16/32位嵌入式RISC微处理器内核技术的ARM公司在英国剑桥诞生了。迄今为止,ARM已向全球100多个领先的半导体公司设计并授权了其微处理器IP,业内众多的数字电子产品都是基于ARM的内核架构。以当前的无线通信为例,8成市场份额为采用ARM技术的产品所占据。据In-Stat有关部门的预计,到2006年,含有ARM内核架构的电子产品将占相关市值的2/3强。ARM中国总裁谭军先生在与我交谈时提到:“实际上,ARM的IP技术包括芯片内核,结构延伸、软件开发工具和SoC解决方案等许多种。ARM的16/32位嵌入式微处理器内核技术是企业技术领…     

基于SX微处理器的嵌入式Internet应用系统的设计

SX微处理器是美国Scenix公司新近推出的一种RISC指令微处理器。文章根据SX微处理器的结构和指令编程的特点 ,描述了基于SX微处理器的嵌入式Internet设计原理 ,并通过一个嵌入式Internet远程监视器的设计例子 ,进一步说明了应用SX微处理器进行嵌入式Internet应用系统设计的优势。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.