Liquid‐phase sintering,microstructural evolution,and microwave dielectric properties of Li2Mg3SnO6–LiF ceramics

The liquid‐phase sintering behavior and microstructural evolution of x wt% LiF aided Li₂Mg₃SnO₆ ceramics (x = 1‐7) were investigated for the purpose to prepare dense phase‐pure ceramic samples. The grain and pore morphology, density variation, and phase structures were especially correlated with the subsequent microwave dielectric properties. The experimental results demonstrate a typical liquid‐phase sintering in LiF–Li₂Mg₃SnO₆ ceramics, in which LiF proves to be an effective sintering aid for the Li₂Mg₃SnO₆ ceramic and obviously reduces its optimum sintering temperature from ~1200°C to ~850°C. The actual sample density and microstructure (grain and pores) strongly depended on both the amount of LiF additive and the sintering temperature. Higher sintering temperature tended to cause the formation of closed pores in Li₂Mg₃SnO₆‐x wt% LiF ceramics owing to the increase in the migration ability of grain boundary. An obvious transition of fracture modes from transgranular to intergranular ones was observed approximately at x = 4. A single‐phase dense Li₂Mg₃SnO₆ ceramic could be obtained in the temperature range of 875°C‐1100°C, beyond which the secondary phase Li₄MgSn₂O₇ (<850°C) and Mg₂SnO₄ (>1100°C) appeared. Excellent microwave dielectric properties of Q × f = 230 000‐330 000 GHz, ε_r = ~10.5 and τ_f = ~?40 ppm/°C were obtained for Li₂Mg₃SnO₆ ceramics with x = 2‐5 as sintered at ~1150°C. For LTCC applications, a desirable Q × f value of ~133 000 GHz could be achieved in samples with x = 3‐4 as sintered at 875°C.     

Structure‐Dependent Microwave Dielectric Properties and Middle‐Temperature Sintering of Forsterite (Mg1–xNix)2SiO4 Ceramics

The crystal structure, microstructure, and microwave dielectric properties of forsterite‐based (Mg_1–xNi_x)₂SiO₄ (x = 0.02–0.20) ceramics were systematically investigated. All samples present a single forsterite phase of an orthorhombic structure with a space group Pbnm except for a little MgSiO₃ secondary phase as x > 0.08. Lattice parameters in all axes decrease linearly with increasing Ni content due to the smaller ionic radius of Ni²⁺ compared to Mg²⁺. The substitution of an appropriate amount of Ni²⁺ could greatly improve the sintering behavior and produce a uniform and closely packed microstructure of the Mg₂SiO₄ ceramics such that a superior Q × f value (152 300 GHz) can be achieved as x = 0.05. The τ_f value was found to increase with increasing A‐site ionic bond valences. In addition, various additives were used as sintering aids to lower the sintering temperature from 1500°C to the middle sintering temperature range. Excellent microwave dielectric properties of ε_r~6.9, Q × f~99800 GHz and τ_f~?50 ppm/°C can be obtained for 12 wt% Li₂CO₃‐V₂O₅‐doped (Mg_0.95Ni_0.05)₂SiO₄ ceramics sintered at 1150°C for 4 h.     

Fabrication and Microwave Dielectric Properties of Mg2SiO4‐LiMgPO4‐TiO2 Composite Ceramics

Complete solid solutions between Mg₂SiO₄ and LiMgPO₄ are confirmed by the XRD results. The phase constitution of 0.5Mg₂SiO₄‐0.5LiMgPO₄ is found to be dependent on firing temperature. The chemical compatibility between Mg₂SiO₄ and rutile phase at sintering temperature is modified by incorporating LiMgPO₄. The microwave dielectric properties of (1?y)(0.5Mg₂SiO₄‐0.5LiMgPO₄)‐yTiO₂ (y = 0–0.3) composite ceramics have been investigated. The optimized microwave dielectric properties for 0.35Mg₂SiO₄‐0.35LiMgPO₄‐0.3TiO₂ ceramics sintered at 1050°C show low dielectric constant (11.4), high‐quality factor (31 800 GHz), and low‐temperature coefficient of resonant frequency (?4 ppm/°C).     

A Novel Low‐Firing and Low Loss Microwave Dielectric Ceramic Li2Mg2W2O9 with Corundum Structure

The crystal structure and microwave dielectric properties of a novel low‐firing compound Li₂Mg₂W₂O₉ were investigated in this study. The phase purity and crystal structure were investigated using X‐ray diffraction analyses and Rietveld refinement. The best microwave dielectric properties of the ceramic with a low permittivity (ε_r) ~11.5, a quality factor (Q × f) ~31 900 GHz (at 10.76 GHz) and a temperature coefficient of the resonant frequency (τ_f) ~ ?66.0 ppm/°C were obtained at the optimum sintering temperature (920°C). CaTiO₃ was added into the Li₂Mg₂W₂O₉ ceramic to obtain a near zero τ_f, and 0.93Li₂Mg₂W₂O₉–0.07CaTiO₃ ceramic exhibited improved microwave dielectric properties with a near‐zero τ_f ~ ?1.3 ppm/°C, a ε_r ~21.6, a high Q_u × f value ~20 657 GHz. The low sintering temperature and favorable microwave dielectric properties make it a promising candidate for LTCC applications.     

Sintering behavior,structural phase transition,and microwave dielectric properties of La1‐xZnxTiNbO6‐x/2 ceramics

La_1‐xZn_xTiNbO_6‐x/2 (LZTN‐x) ceramics were prepared via a conventional solid‐state reaction route. The phase, microstructure, sintering behavior, and microwave dielectric properties have been systematically studied. The substitution of a small amount of Zn²⁺ for La³⁺ was found to effectively promote the sintering process of LTN ceramics. The corresponding sintering mechanism was believed to result from the formation of the lattice distortion and oxygen vacancies by means of comparative studies on La‐deficient LTN ceramics and 0.5 mol% ZnO added LTN ceramics (LTN+0.005ZnO). The resultant microwave dielectric properties of LTN ceramics were closely correlated with the sample density, compositions, and especially with the phase structure at room temperature which depended on the orthorhombic‐monoclinic phase transition temperature and the sintering temperature. A single orthorhombic LZTN‐0.03 ceramic sintered at 1200°C was achieved with good microwave dielectric properties of ε_r~63, Q×f~9600 GHz (@4.77 GHz) and τ_f ~105 ppm/°C. By comparison, a relatively high Q × f~80995 GHz (@7.40 GHz) together with ε_r~23, and τ_f ~?56 ppm/°C was obtained in monoclinic LTN+0.005ZnO ceramics sintered at 1350°C.     

Low-temperature sintering of microwave ceramics with high Qf values through LiF addition

Microwave ceramic with low-sintering temperature is one of the most important classes of material to realize the integration and miniaturization of microwave devices. In this work, in order to simultaneously realize low-temperature sintering and good microwave dielectric properties, CaMgSi₂O₆–xLiF was sintered at various sintering temperatures using LiF as a sintering aid. In comparison to CaMgSi₂O₆ (x = 0) sintered at 1250°C, desirable microwave dielectric properties of ε_r = 7.45, Qf = 64 800 GHz, and τ_f = −34 ppm/°C and good chemical compatibility with the Ag electrodes, were achieved sintered at 900°C when adding 2 wt% LiF into CaMgSi₂O₆. Furthermore, a secondary phase, Li₂MgSiO₄, occurred at x ≥ 1 wt%, and the densest microstructure was obtained at the x value of ~2 wt%. We propose that the high Qf value and the low-sintering temperature were obtained through moderate LiF addition, which promotes densification and provides Li as the acceptor dopant. By further verifying in Mg₂SiO₄ ceramic, our study demonstrates that the approach of adding LiF can realize low-temperature sintering without jeopardizing the excellent microwave dielectric properties, and can potentially be applied in a wide range of low-temperature sintering of electronic ceramics.     

Synthesis and microwave dielectric properties of new high quality Mg2NdNbO6 ceramics

New high‐quality microwave dielectric ceramics Mg₂NdNbO₆ were prepared by conventional solid‐state sintering method. The phases, micro‐structures and microwave dielectric properties of Mg₂NdNbO₆ ceramics were investigated at sintering temperature in the range of 1275°C‐1400°C. The X‐ray diffraction patterns showed that the peaks of the compounds were attributed to two phases, including the main crystalline phase of NdNbO₄ that was indexed as the monoclinic phase and MgO as the second phase. Well‐developed microstructures of Mg₂NdNbO₆ ceramics can be achieved, and the grain size reached the maximum value (1.63 μm) at 1375°C. As the sintering temperature increased, the dielectric constant, temperature coefficient of resonant frequency and apparent density remained almost unchanged, however, the significant change in the quality factor was observed. At 1375°C, Mg₂NdNbO₆ ceramics possessed excellent microwave dielectric properties: ε_r = 16.22, Q × f = 116 000 GHz and τ_f = ?30.96 ppm/°C.     

Microwave Dielectric Properties of Novel Glass‐Free Low‐Firing Li2CeO3 Ceramics

Novel glass–free low temperature firing microwave dielectric ceramics Li₂CeO₃ with high Q prepared through a conventional solid‐state reaction method had been investigated. All the specimens in this paper have sintering temperature lower than 750°C. XRD studies revealed single cubic phase. The microwave dielectric properties were correlated with the sintering conditions. At 720°C/4 h, Li₂CeO₃ ceramics possessed the excellent microwave dielectric properties of ε_r = 15.8, Q × f = 143 700 (GHz), and τ_f  = ?123 ppm/°C. Li₂CeO₃ ceramics could be excellent candidates for glass‐free low‐temperature co‐fired ceramics substrates.     

Low‐Temperature Sintering and Microwave Dielectric Properties of (Mg0.95Zn0.05)2(Ti0.8Sn0.2)O4–(Ca0.8Sr0.2)TiO3 Composite Ceramics

0.9(Mg_0.95Zn_0.05)₂(Ti_0.8Sn_0.2)O₄–0.1(Ca_0.8Sr_0.2)TiO₃ (MZTS–CST) ceramics were prepared by a conventional solid‐state route. The MZTS–CST ceramics sintered at 1325°C exhibited ε_r = 18.2, Q × f = 49 120 GHz (at 8.1 GHz), and τ_f = 15 ppm/°C. The effects of LiF–Fe₂O₃–V₂O₅ (LFV) addition on the sinterability, phase composition, microstructure, and microwave dielectric properties of MZTS–CST were investigated. Eutectic liquid phases 0.12CaF₂/0.28MgF₂/0.6LiF and MgV₂O₆ were developed, which lowered the sintering temperature of MZTS–CST ceramics from 1325°C to 950°C. X‐ray powder diffraction (XRPD) and energy dispersive spectroscopy (EDS) analysis revealed that MZTS and CST coexisted in the sintered ceramics. Secondary phase Ca₅Mg₄(VO₄)₆ as well as residual liquid phase affected the microwave dielectric properties of MZTS–CST composite ceramics. Typically, the MZTS–CST–5.3LFV composite ceramics sintered at 950°C showed excellent microwave dielectric properties: ε_r = 16.3, Q × f = 30 790 GHz (at 8.3 GHz), and τ_f = ?10 ppm/°C.     

Low‐Temperature‐Fired ReVO4 (Re = La,Ce) Microwave Dielectric Ceramics

We report a series of ReVO₄ (Re = La, Ce) microwave dielectric ceramics fabricated by a standard solid‐state reaction method. X‐ray diffraction and scanning electron microscopy measurements were performed to explore the phase purity, sintering behavior, and microstructure. The analysis revealed that pure and dense monoclinic LaVO₄ ceramics with a monazite structure and tetragonal CeVO₄ ceramics with a zircon structure could be obtained in their respective sintering temperature range. Furthermore, LaVO₄ and CeVO₄ ceramics sintered at 850°C and 950°C for 4 h possessed out‐bound microwave dielectric properties: ε_r = 14.2, Q × f = 48197 GHz, τ_f = ?37.9 ppm/°C, and ε_r = 12.3, Q × f = 41 460 GHz, τ_f = ?34.4 ppm/°C, respectively. The overall results suggest that the ReVO₄ ceramics could be promising materials for low‐temperature‐cofired ceramic technology.     

Ba5Li2W3O15: A New Li‐Containing Perovskite‐Type Microwave Ceramic with High Q and Low τf

A new Li‐containing microwave ceramic Ba₅Li₂W₃O₁₅ with hexagonal perovskite structure was prepared through a solid‐state ceramic route. Small amount of scheelite BaWO₄ appeared as a second phase during sintering. The Ba₅Li₂W₃O₁₅ could be well densified at 1120°C and exhibits good microwave dielectric properties with permittivity (ε_r) of 25.4, high Q × f value about 39 000 GHz, and low temperature coefficient of resonate frequency (τ_f) of 10 ppm/°C. The addition of BaCu(B₂O₅) can effectively lower the sintering temperature from 1120°C to 900°C and does not induce degradation of the microwave dielectric properties. These results indicate that the Ba₅Li₂W₃O₁₅ ceramic might be a promising candidate in microwave dielectric resonators.     

Microwave Dielectric Properties of Scheelite Structured PbMoO4 Ceramic with Ultralow Sintering Temperature

In this work, a low‐firing microwave dielectric ceramic PbMoO₄ with tetragonal structure was prepared via a solid‐state reaction method. The sintering temperature ranges from 570°C to 670°C. Ceramic samples with relative densities above 97% were obtained when sintering temperature was around 600°C. The best microwave dielectric properties were obtained in the ceramic sintered at 650°C for 2 h with a permittivity ~26.7, a Q × f value about 42 830 GHz (at 6.2 GHz) and a temperature coefficient value of 6.2 ppm/°C. From the X‐ray diffraction, backscattered electron imaging results of the cofired sample with 30 wt% silver and aluminum additive, the PbMoO₄ ceramic was found not to react with Ag and Al at 630°C. The microwave dielectric properties and low sintering temperature of PbMoO₄ ceramic make it a candidate for low‐temperature cofired ceramic applications.     

Low‐temperature sintering and thermal stability of Li2GeO3‐based microwave dielectric ceramics with low permittivity

A low‐permittivity dielectric ceramic Li₂GeO₃ was prepared by the solid‐state reaction route. Single‐phase Li₂GeO₃ crystallized in an orthorhombic structure. Dense ceramics with high relative density and homogeneous microstructure were obtained as sintered at 1000‐1100°C. The optimum microwave dielectric properties were achieved in the sample sintered at 1080°C with a high relative density ~ 96%, a relative permittivity ε_r ~ 6.36, a quality factor Q × f ~ 29 000 GHz (at 14.5 GHz), and a temperature coefficient of resonance frequency τ_f ~ ?72 ppm/^°C. The sintering temperature of Li₂GeO₃ was successfully lowered via the appropriate addition of B₂O₃. Only 2 wt.% B₂O₃ addition contributed to a 21.2% decrease in sintering temperature to 850°C without deteriorating the dielectric properties. The temperature dependence of the resonance frequency was successfully suppressed by the addition of TiO₂ to form Li₂TiO₃ with a positive τ_f value. These results demonstrate potential applications of Li₂GeO₃ in low‐temperature cofiring ceramics technology.     

Low temperature fired CaF2-based microwave dielectric ceramics with enhanced microwave properties

Low-temperature-fired microwave ceramics are key to realizing the integration and miniaturization of microwave devices. In this study, a facile wet chemical method was applied to synthesize homogenous nano-sized CaF₂ powders for simultaneously achieving low-temperature sintering and superior microwave dielectric properties. Pure CaF₂ ceramics sintered at 950 °C for 6 h with good microwave dielectric properties (ε_r = 6.22, Q×f = 36,655 GHz, and τ_f = ?102 ppm/°C) was achieved. The microwave dielectric properties of the CaF₂ ceramics were further improved by introducing LiF as a sintering aid. The sintering temperature of CaF₂-based ceramics was effectively lowered from 950 °C to 750 °C with 10 wt% LiF doping, and excellent microwave dielectric properties (ε_r = 6.37, Q×f = 65,455 GHz, and τ_f = ?71 ppm/°C) were obtained.     

Grain boundary segregation and microwave dielectric properties of low loss Mg1·5Zn0·5SiO4 ceramics containing Bi2O3

Abstract

Abstract

Uncommon low loss Mg_1·5Zn_0·5SiO₄ ceramics containing Bi₂O₃ were investigated by focusing on the roles of Bi₂O₃ on phase evolution and resultant microwave dielectric properties. While the primary goal of lowering sintering temperature can be easily assumed, some unexpected behaviours of the Bi₂O₃ containing materials are highlighted with experimental evidences concerning selective dissolution of Zn₂SiO₄ and grain boundary segregation of gradual Bi richer phases. These evidences are strongly dependent on the content of Bi₂O₃ and sintering temperature. As an optimal composition, Mg_1·5Zn_0·5SiO₄ with 0·5?mol.-%Bi₂O₃ exhibited promising dielectric properties of a k value ～6·8 and a Q×f value ～23?300 at a sintering temperature of 1150°C, which is much lower than typical sintering temperature of 1450°C.     

Low-temperature sintering and microwave dielectric properties of CaSnxSiO(3+2x)-based positive τf compensator

The sinterability, phase compositions, and microwave dielectric properties of LiF-doped nonstoichiometric CaSn_xSiO_(3+2x) ceramics prepared by the solid-state reaction were investigated. LiF addition effectively reduced the sintering temperature of CaSn_xSiO_(3+2x) ceramics and inhibited the volatilization of Sn. A pure monoclinic CaSnSiO₅ phase was achieved in the 1.0?wt% LiF-doped CaSn_0.94SiO_4.88 ceramics sintered at 1175?°C, which exhibited good microwave dielectric properties of ε_r =?11.6, Q?×?f?=?34000?GHz, and τ_f =?+73.2?ppm/°C. The positive τ_f value was an atypical and important phenomenon for low-permittivity microwave dielectric ceramics, which could be a promising τ_f compensator.     

Low‐Temperature Sintering Microwave Characteristics of B2O3‐doped CaLa4Ti4O15 Dielectric Ceramics

Preparation and microwave dielectric properties of B₂O₃‐doped CaLa₄Ti₄O₁₅ ceramics have been investigated. X‐ray diffraction data show that CaLa₄Ti₄O₁₅ ceramic has a trigonal structure coupled with a second phase of CaLa₄Ti₅O₁₇. The CaLa₄Ti₄O₁₅ ceramic with addition of 0.5 wt% B₂O₃, sintered at 1220°C for 4 h, exhibits microwave dielectric properties with a dielectric constant of 45.8, Q × f value of 24,000 GHz, and temperature coefficient of resonant frequency (τ_f) of ?19 ppm/^°C. B₂O₃‐doped CaLa₄Ti₄O₁₅ ceramics, which have better sintering behavior (decrease in sintering temperature ~ 330°C) and dielectric properties than pure CaLa₄Ti₄O₁₅ ceramics, are candidates for applications in microwave devices.     

Low‐Temperature Sinterable (1−x)Ba3(VO4)2–xLiMg0.9Zn0.1PO4 Microwave Dielectric Ceramics

The novel low‐temperature sinterable (1 ? x)Ba₃(VO₄)₂–xLiMg_0.9Zn_0.1PO₄ microwave dielectric ceramics were prepared by cofiring the mixtures of pure‐phase Ba₃(VO₄)₂ and LiMg_0.9Zn_0.1PO₄. The phase structure and grain morphology of the ceramics were evaluated using X‐ray diffraction, Raman spectra, and scanning electron microscopy. The results indicated that Ba₃(VO₄)₂ and LiMg_0.9Zn_0.1PO₄ phases can well coexist in the sintered body. Nevertheless, a small amount of LiZnPO₄ and some vanadate phases with low melting points were observed, which not only can influence the microwave dielectric properties of the ceramic but also can obviously improve the densification behavior at a relatively low sintering temperature. The near‐zero temperature coefficients of the resonant frequency (τ_f) could be achieved by adjusting the relative content of the two phases owing to their opposite τ_f values and simultaneously a desirable quality factor Q × f value can be maintained. No chemical reaction between the matrix ceramic phase and Ag took place after sintering at 800°C for 4 h. The ceramics with 45 vol% LiMg_0.9Zn_0.1PO₄ can be well sintered at only 800°C and exhibit excellent microwave dielectric properties of ε_r ~ 10, Q × f ~ 64 500 GHz, and τ_f ~ ?2.1 ppm/°C, thus showing a great potential as a low‐permittivity low‐temperature cofired microwave dielectric material.     

Low‐Temperature Sintering and Microwave Dielectric Properties of CaMoO4‐Based Temperature Stable LTCC Material

The CaMoO₄–xY₂O₃–xLi₂O ceramics were prepared by the solid‐state reaction method. The sintering behavior, phase evolution, microstructure, and microwave dielectric properties were investigated. CaMoO₄ solid solution was obtained when x = 0.030, and two‐phase system including tetragonal CaMoO₄ phase and cubic Y₂O₃ phase formed when 0.066 ≤ x ≤ 1.417. A temperature stable CaMoO₄‐based microwave dielectric ceramic with ultralow sintering temperature (775°C) was obtained in the CaMoO₄–xY₂O₃–xLi₂O system when x = 0.306, which showed good microwave dielectric properties with a low permittivity of 9.5, a high Q_f value of 63 240 GHz, and a near‐zero temperature coefficient of resonant frequency of +7.2 ppm/°C.     

Effects of TiO2 additive on ultra-low-loss MgO–LiF microwave dielectric ceramics

MgO ceramics have good microwave dielectric properties, but the high sintering temperatures limit its application. The effects of TiO₂ additive on the phase composition and microwave dielectric properties of MgO ceramics with 4mol%LiF were investigated by solid state reaction method. TiO₂ and MgO form Mg₂TiO₄ in a magnesium-rich environment with 4mol%LiF at about 900 °C, which as a solid solution or second phase had a huge impact on MgO ceramic with 4mol % LiF. When the content of TiO₂ less than 2mol %, Mg₂TiO₄ as a solid solution in MgO ceramics, which made the grain of MgO larger. When the content of TiO₂ more than 2mol %, Mg₂TiO₄ as a second phase in MgO ceramics, which made the microwave dielectric properties of MgO ceramics bad. Typically, the MgO-4mol%LiF-0.5mol%TiO₂ ceramic sintered at 1075 °C for 6 h acquired the best dielectric properties: ε_r = 9.7, Qf = 617,000 GHz and τ_f = −59.49 ppm/°C.