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蓝宝石衬底分步清洗及其对后续氮化的影响 总被引:1,自引:0,他引:1
通过反射高能电子衍射仪(RHEED)分析蓝宝石衬底在经过双热电偶校温的ECR-PEMOCVD装置中清洗氮化实验表面晶质的RHEED图像,研究了常规清洗和ECR等离子体所产生的活性氢氮等离子体源对蓝宝石衬底清洗、氮化的实验.结果表明,经常规清洗后的蓝宝石衬底表面晶质差异较大,有些衬底再经通常的30min等离子体清洗是达不到要求的,而要根据情况施行分步清洗才能清洗充分,清洗充分的衬底经20min就可氮化出来,不充分的再长的时间也很难氮化. 相似文献
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在自行设计研制的电子回旋共振等离子体增强金属有机物化学气相沉积(ECR?蛳EMOCVD)装置上生长氮化镓(GaN)薄膜,以氮等离子体为氮源,三乙基镓(TEG)为镓源,蓝宝石(α?蛳Al2O3)为衬底。通过反射高能电子衍射、原子力显微镜、射线衍射实验数据分析,研究了ECR等离子体所产生的活性氢源和氮源对蓝宝石(α?蛳Al2O3)衬底的氮化作用, 结果表明:在ECR等离子体中,不掺入氢气,温度较低时可以明显提高α?蛳Al2O3衬底的氮化效果,获得平整的氮化层,且生长的氮化镓缓冲层质量是最好的。 相似文献
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《大气与环境光学学报》1997,(6)
Cree研究公司演示了一台在常温下运行的蓝色半导体二极管脉冲激光器,将其应用于商业设备上将会极大提高光存储容量.该公司生产的403urn激光器是以碳化硅做衬底和氮化像做激光介质.1995年日本Nichia化学工业公司曾演示过以蓝宝石做衬底的氯化筹二极管激光器,但Cree公司的激光器是第一个基于碳化硅衬底的氮化修激光器.与Nichin公司的蓝宝石衬底的蓝色氯化噱激光器比较,碳化硅衬底的氯化综激光器具有如下重要优点:·这种衬底具有自然的能通过激光能的解理面,而蓝宝石晶体没有这种解理面,因此研究人员必须用反应性离子蚀刻的方法制成… 相似文献
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制备并研究了纳米级图形化蓝宝石衬底.采用磁控溅射技术在蓝宝石衬底上沉积 SiO2薄膜,利用自组装方法在SiO2薄膜上制备单层聚苯乙烯(PS)胶体球阵列,利用感应耦合等离子体干法刻蚀将周期性PS胶体球的图形转移到SiO2薄膜上,通过湿法腐蚀制备了纳米级图形化蓝宝石衬底.利用扫描电子显微镜对胶体球掩膜、SiO2纳米柱掩膜和图形化蓝宝石衬底结构进行了观察,研究了湿法腐蚀蓝宝石衬底的中间产物对刻蚀的影响,分析了腐蚀温度和腐蚀时间对蓝宝石衬底的影响.结果表明,湿法腐蚀的中间产物会降低蓝宝石衬底的刻蚀速率.蓝宝石衬底的腐蚀速率随着腐蚀温度的升高而加快;在同一腐蚀温度下,随着腐蚀时间的增加,图形尺寸进一步减小. 相似文献
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J. N. Johnson L. A. Almeida M. Martinka J. D. Benson J. H. Dinan 《Journal of Electronic Materials》1999,28(6):817-820
Without any additional preparation, Cd1−yZnyTe (211)B (y∼3.5%) wafers were cleaned by exposure to an electron cyclotron resonance (ECR) Ar/H2 plasma and used as substrates for HgCdTe molecular beam epitaxy. Auger electron spectra were taken from as-received wafers,
conventionally prepared wafers (bromine: methanol etching, followed by heating to 330–340°C), and wafers prepared under a
variety of ECR process conditions. Surfaces of as-received wafers contained ∼1.5 monolayers of contaminants (oxygen, carbon,
and chlorine). Conventionally prepared wafers had ∼1/4 monolayer of carbon contamination, as well as excess tellurium and/or
excess zinc depending on the heating process used. Auger spectra from plasma-treated CdZnTe wafers showed surfaces free from
contamination, with the expected stoichiometry. Stoichiometry and surface cleanliness were insensitive to the duration of
plasma exposure (2–20 s) and to changes in radio frequency input power (20–100 W). Reflection high energy electron diffraction
patterns were streaked indicating microscopically smooth and ordered surfaces. The smoothness of plasma-etched CdZnTe wafers
was further confirmed ex situ using interferometric microscopy. Surface roughness values of ∼0.4 nm were measured. Characteristics of HgCdTe epilayers
deposited on wafers prepared with plasma and conventional etching were found to be comparable. For these epilayers, etch pit
densities on the order of 105 cm−2 have been achieved. ECR Ar/H2 plasma cleaning is now utilized at Night Vision and Electronic Sensors Directorate as the baseline CdZnTe surface preparation
technique. 相似文献
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Cleaning of InP surfaces using electron cyclotron resonance (ECR) nitrogen plasmas has been studied. Electrical performance of Al/SiNx:H/InP structures has been analysed to determine the effect of the plasma cleaning. The SiNx:H insulator layers are deposited at 200°C using an ECR chemical vapour deposition technique. It is observed that a 30 s low-power (60 W) ECR N2 plasma treatment of InP surface reduces the interface defects and improves the resistivity and breakdown field values of the SiNx:H. 相似文献
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Wang Q. Li P.W. Osgood R.M. Jr. Wang W.I. Yang E.S. Lu Z. 《Electron Device Letters, IEEE》1992,13(2):83-85
Electron cyclotron resonance (ECR) hydrogen (H) and nitrogen (N) plasma surface passivation on an AlGaAs/GaAs heterojunction bipolar transistor (HBT) is reported. As a result of the plasma processing, the base current ideality factor is improved from 2.67 to 1.96, and the maximum current gain is increased from 720 to 1000. In the low-current regime, the base current is reduced by two orders of magnitude. The nitride layer grown by nitrogen plasma passivates the GaAs surface and appears to be thermally stable without significant degradation 相似文献
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GaN films have been deposited on GaAs(lOO) substrates by a novel growth technique, hot plasma chemical vapor deposition. A
radio frequency N plasma source with high power, up to 5 kW, provides an abundance of nitrogen atoms during growth. In addition,
strong ultraviolet emissions from the hot plasma irradiate onto the substrate and promote the dissociation of triethylgallium,
this results in growth of GaN at very low temperature (even at room temperature). In this paper, we describe the characteristics
of hot nitrogen plasma and present the results of the low temperature growth of GaN. In addition, we have investigated the
effects of the nitridation of GaAs substrates. Reflection high energy electron diffraction indicates the formation of a surface
cubic nitrided layer on the pretreated GaAs. The GaN films grown on fully nitrided GaAs(l00) substrates are of dominantly
cubic structures. 相似文献
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T. V. Malin D. S. Milakhin V. G. Mansurov Yu. G. Galitsyn A. S. Kozhuhov V. V. Ratnikov A. N. Smirnov V. Yu. Davydov K. S. Zhuravlev 《Semiconductors》2018,52(6):789-796
The effect of atomic aluminum deposited onto sapphire substrates with different nitridation levels on the quality of AlN layers grown by ammonia molecular-beam epitaxy is investigated. The nitridation of sapphire with the formation of ~1 monolayer of AlN is shown to ensure the growth of layers with a smoother surface and better crystal quality than in the case of the formation of a nitrided AlN layer with a thickness of ~2 monolayers. It is demonstrated that the change in the duration of exposure of nitrided substrates to the atomic aluminum flux does not significantly affect the parameters of subsequent AlN layers. 相似文献