基于Atmega48太阳能路灯控制器研究

太阳能控制器是太阳能路灯系统中的核心部分,设计了一种基于Atmega48单片机的太阳能路灯控制器。该控制器采用PWM脉冲调制控制技术通过对蓄电池电压、充电电流等参数进行检测,控制开关管的关断,来实现充放电控制和保护功能。测试表明,该控制器运行稳定、可靠性高、性价比高,具有良好的市场前景。     

基于单片机的太阳能充放电控制器的设计

该设计的太阳能充放电控制器是以单片机STC12C5412AD为控制核心来对铅蓄电池的过度充电和过度放电予以保护,原理是利用了单片机自带的模块PWM脉宽调制对蓄电池充电电流予以控制,从而实现了蓄电池过充的保护,在蓄电池对负载进行放电的过程中,当蓄电池电压低于所限制的最低负载电压值时,程序将使负载部分停止供电,从而实现了对蓄电池过放的保护。对蓄电池过度充电和过度放电都会使其有效使用时间大大降低。     

太阳能路灯充放电控制器的设计

介绍了以单片机为核心太阳能路灯充放电控制器的设计。采用PWM进行充电管理,有效地保护锂蓄电池,防止过充电现象。提供了简单的电压电流检测电路,给出小电阻阻值随温度变化的软件补偿方法。     

基于Atmega48太阳能充电控制器的设计

采用先进的PWM(PulseWidthModulation)脉宽调制的方法来给蓄电池充电,硬件主要通过Atmega48微控制器的PWM口,利用软件编程的方法来实现对占空比大小的控制,从而达到控制蓄电池充电电压的目的。对于蓄电池的电压采用时刻在线检测的方法进行测量,来预防蓄电池的过充和过放现象,保护蓄电池,提高蓄电池的使用寿命。控制器同时还应具备控制蓄电池是否对负载供电的功能,当蓄电池的电压高于过放电压,控制器控制蓄电池向负载供电;当蓄电池的电压处于过放状态时,控制器控制蓄电池停止向负载的供电,在此过程中,控制器对于蓄电池的保护作用是至关重要的。     

太阳能光伏储存技术研究

目前,太阳能能源已广泛应用于通讯,交通,电力等各个方面。其在生活中的利用越来越频繁,那么对作为储存太阳能的重要器件蓄电池的研究也就十分重要了。市场上的许多蓄电池都存在着充放电控制不合理和保护不够充分等问题。本设计研究确定了一种基于STC单片机的太阳能充电控制器的方案,在太阳能对蓄电池的充电方式、控制器的功能要求和电路保护方面做了分析,完成了系统硬件电路设计和软件编程,实现了对蓄电池的科学管理,从而达到更有效的存储太阳能。实践证明,该控制器性能优良,可靠性高,可以时刻监视太阳能电池板和蓄电池状态,实现控制蓄电池最优充放电,既能达到延长蓄电池使用寿命,也能够更好的对太阳能进行存储。     

基于STC单片机的太阳能控制器设计

设计了一款基于STC12C4052AD单片机控制的太阳能供电系统控制器。系统在单片机控制下,将太阳能电池组转换得到的直流电,通过PWM控制3段式充电(恒流充电、恒压充电、浮充电)储存在12V铅酸蓄电池中,再给负载(路灯)供电。控制器充分利用STC12C4052AD单片机的硬件和软件资源,最大程度地简化硬件电路,能合理控制蓄电池的充放电过程,并对其进行保护,具有较高的性价比和可靠性。     

基于PIC16F676的太阳能控制器

设计一套简易太阳能控制器,可方便控制蓄电池的充放电。该控制器采用低功耗的PIC16F676型单片机作为整个控制电路的核心．实时监测、控制蓄电池两端电压,使用液晶屏直观显示其电压和电量,采用温度补偿二极管克服环境温度变化引起的蓄电池端电压变化,并采用“自适应三阶段”充电模式,通过不同条件下调用相应的充放电子程序．以最佳的方式对蓄电池进行充放电,更好保护了蓄电池。     

基于PIC16F676的太阳能控制器

设计一套简易太阳能控制器,可方便控制蓄电池的充放电.该控制器采用低功耗的PIC16F676型单片机作为整个控制电路的核心,实时监测、控制蓄电池两端电压,使用液晶屏直观显示其电压和电量,采用温度补偿二极管克服环境温度变化引起的蓄电池端电压变化,并采用"自适应三阶段"充电模式,通过不同条件下调用相应的充放电子程序,以最佳的方式对蓄电池进行充放电,更好保护了蓄电池.     

高效智能化太阳能充电系统的研究

针对野外远离市电供电的系统或者用户的电源供应问题,文中设计了一个智能化太阳能充电用电管理系统,采用MPPT最大功率跟踪方法,控制PWM信号调节BUCK电路的输出,使太阳能电池与蓄电池尽量处在一种相互匹配的状态下,并采用阶段充电方式,采用STC12C5A60S2单片机,集成AD转换功能与PWM信号输出,简化了系统的设计,通过实验,该系统能够有效地提高充电效率以及对蓄电池的保护功能。     

小功率简易型太阳能控制器设计

近年来再生能源技术广受重视,而太阳能发电由于有先进的电力电子技术辅助,使之已成为极具潜力的再生能源之一。介绍了太阳能电池的基本原理和伏安特性,提供了一套小功率简易太阳能控制器的电路。该电路将太阳能电池阵列与蓄电池直接耦合,采用低功耗的单片机P87LPC767作为控制回路的核心,实时测量蓄电池的端电压,通过脉宽调制控制太阳能电池阵列的充电电压,并通过功率管控制蓄电池与负载的通断,实现对蓄电池的放电保护。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.