Variable Input Delay CMOS Logic for Low Power Design

We propose a new complementary metal-oxide semiconductor (CMOS) gate design that has different delays along various input to output paths within the gate. The delays are accomplished by inserting selectively sized ldquopermanently onrdquo series transistors at the inputs of a logic gate. We demonstrate the use of the variable input delay CMOS gates for a totally glitch-free minimum dynamic power implementations of digital circuits. Applying a linear programming method to the c7552 benchmark circuit and using the gates described in this paper, we obtained a power saving of 58% over an unoptimized design. This power consumption was 18% lower than that for an alternative low power design using conventional CMOS gates. The optimized circuits had the same critical path delays as their original unoptimized versions. Since the overall delay was not allowed to increase, the glitch elimination with conventional gates required insertion of delay buffers on noncritical paths. The use of the variable input delay gates drastically reduced the required number of delay buffers.     

LVDCSL: a high fan-in, high-performance, low-voltage differentialcurrent switch logic family

This paper presents a low voltage differential current switch logic (LVDCSL) gate capable of achieving high performance for large fan-in gates. High fan-in is enabled by using a large height predischarged N-channel metal-oxide-semiconductor (NMOS) trees. The power penalty of an increased number of internal nodes in the gate is mitigated by restricting their voltage swings. The salient features of this low-voltage DCSL family are high speed for high fan-in large stack height NMOS trees, low power due to restricted internal voltage swings, simple interface to static complementary metal-oxide-semiconductor (CMOS), and a latching nature which locks out inputs once outputs are evaluated. Results show that LVDCSL is capable of working at under 2 V in a 0.35% CMOS process while being faster than comparable Domino gates. At the same time total power consumption is reduced. LVDCSL achieves 40% delay improvement and 22% power reduction in comparison with dual rail Domino gates for 8 bit carry look-ahead circuits. Results for the critical path of an adder reveal that the complexity afforded by the gate, effectively decreases the number of logic levels and leads to improved performance     

Testability enhancement of domino CMOS logic

A simple circuit technique to enhance the testability of domino CMOS circuits is presented. The fact that domino CMOS gates always have their outputs precharged low enables one to test for output stuck-at-one faults by a simple modification of the domino gate.     

A combined gate replacement and input vector control approach for leakage current reduction

Input vector control (IVC) is a popular technique for leakage power reduction. It utilizes the transistor stack effect in CMOS gates by applying a minimum leakage vector (MLV) to the primary inputs of combinational circuits during the standby mode. However, the IVC technique becomes less effective for circuits of large logic depth because the input vector at primary inputs has little impact on leakage of internal gates at high logic levels. In this paper, we propose a technique to overcome this limitation by replacing those internal gates in their worst leakage states by other library gates while maintaining the circuit's correct functionality during the active mode. This modification of the circuit does not require changes of the design flow, but it opens the door for further leakage reduction when the MLV is not effective. We then present a divide-and-conquer approach that integrates gate replacement, an optimal MLV searching algorithm for tree circuits, and a genetic algorithm to connect the tree circuits. Our experimental results on all the MCNC91 benchmark circuits reveal that 1) the gate replacement technique alone can achieve 10% leakage current reduction over the best known IVC methods with no delay penalty and little area increase; 2) the divide-and-conquer approach outperforms the best pure IVC method by 24% and the existing control point insertion method by 12%; and 3) compared with the leakage achieved by optimal MLV in small circuits, the gate replacement heuristic and the divide-and-conquer approach can reduce on average 13% and 17% leakage, respectively.     

On circuit techniques to improve noise immunity of CMOS dynamic logic

Dynamic CMOS logic circuits are widely employed in high-performance VLSI chips in pursuing very high system performance. However, dynamic CMOS gates are inherently less resistant to noises than static CMOS gates. With the increasing stringent noise requirement due to aggressive technology scaling, the noise tolerance of dynamic circuits has to be first improved for the overall reliable operation of VLSI chips designed using deep submicron process technology. In the literature, a number of design techniques have been proposed to enhance the noise tolerance of dynamic logic gates. An overview and classification of these techniques are first presented in this paper. Then, we introduce a novel noise-tolerant design technique using circuitry exhibiting a negative differential resistance effect. We have demonstrated through analysis and simulation that using the proposed method the noise tolerance of dynamic logic gates can be improved beyond the level of static CMOS logic gates while the performance advantage of dynamic circuits is still retained. Simulation results on large fan-in dynamic CMOS logic gates have shown that, at a supply voltage of 1.6 V, the input noise immunity level can be increased to 0.8 V for about 10% delay overhead and to 1.0 V for only about 20% delay overhead.     

Differential current switch logic: a low power DCVS logic family

Differential current switch logic (DCSL), a new logic family for implementing clocked CMOS circuits, has been developed. DCSL is in principle a clocked differential cascode voltage switch logic circuit (DCVS). The circuit topology outlines a generic method for reducing internal node swings in clocked DCVS logic circuits. In comparison to other forms of clocked DCVS, DCSL achieves better performance both in terms of power and speed by restricting internal voltage swings in the NMOS tree. DCSL circuits are capable of implementing high complexity high fan-in gates without compromising gate delay. Automatic lock-out of inputs on completion of evaluation is a novel feature of the circuit. Three forms of DCSL circuits have been developed with varying benefits in speed and power. SPICE simulations of circuits designed using the 1.2 μm MOSIS SCMOS process indicate a factor of two improvement in speed and power over comparable DCVS gates for moderate tree heights     

Logic Gates as Repeaters (LGR) for Area-Efficient Timing Optimization

Logic gates as repeaters (LGRs)-a methodology for delay optimization of CMOS logic circuits with resistance-capacitance (RC) interconnects is described. The traditional interconnect segmentation by insertion of repeaters is generalized to segmentation by distributing logic gates over interconnect lines, reducing the number of additional, logically useless inverters. Expressions for optimal segment lengths and gate scaling are derived. Considerations are presented for integrating LGR into a VLSI design flow in conjunction with related methods. Several logic circuits have been implemented, optimized and verified by LGR. Analytical and simulation results were obtained, showing significant improvement in performance in comparison with traditional repeater insertion, while maintaining low complexity and small area     

Compact voltage-mode multi-valued literal gate using nanoscale ballistic MOSFETs

A CMOS voltage-mode multi-valued literal gate is presented. The ballistic electron transport characteristic of nanoscale MOSFETs is smartly used to compactly achieve universal radix-4 literal operations. The proposed literal gates have small numbers of transistors and low power dissipations, which makes them promising for future nanoscale multi-valued circuits. The gates are simulated by HSPICE.     

电路抗老化设计中基于门优先的关键门定位方法

随着CMOS工艺尺寸不断缩小,尤其在65 nm及以下的CMOS工艺中,负偏置温度不稳定性(NBTI)已经成为影响CMOS器件可靠性的关键因素。提出了一种基于门优先的关键门定位方法,它基于NBTI的静态时序分析框架,以电路中老化严重的路径集合内的逻辑门为优先,同时考虑了门与路径间的相关性,以共同定位关键门。在45 nm CMOS工艺下对ISCAS基准电路进行实验,结果表明:与同类方法比较,在相同实验环境的条件下,该方法不仅定位关键门的数量更少,而且对关键路径的时延改善率更高,有效地减少了设计开销。     

Gate delay variability estimation method for parametric yield improvement in nanometer CMOS technology

In digital CMOS circuits, parametric yield improvement may be achieved by reducing the variability of performance and power consumption of individual cell instances. Such improvement of variation robustness can be attained by evaluating parameter variation impact at gate level. Statistical characterization of logic gates are usually obtained by computationally expensive electrical simulations. An efficient gate delay variability estimation method is proposed for variability-aware design. The proposed method has been applied to different topologies (transistor network arrangements) and CMOS gates, and it has been compared to Monte Carlo simulations for data validation, resulting in computation time savings.     

A 64-bit carry look ahead adder using pass transistor BiCMOS gates

This paper describes a 64-bit two-stage carry look ahead adder utilizing pass transistor BiCMOS gate. The new pass transistor BiCMOS gate has a smaller intrinsic delay time than conventional BiCMOS gates. Furthermore, this gate has a rail-to-rail output voltage. Therefore the next gate does not have a large degradation of its driving capability. The exclusive OR and NOR gate using the pass transistor BiCMOS gate shows a speed advantage over CMOS gates under a wide variance in load capacitance. The pass transistor BiCMOS gates were applied to full adders, carry path circuits, and carry select circuits. In consequence, a 64-bit two-stage carry look ahead adder was fabricated using a 0.5 μm BiCMOS process with single polysilicon and double-metal interconnections. A critical path delay time of 3.5 ns was observed at a supply voltage of 3.3 V. This is 25% better than the result of the adder circuit using CMOS technology. Even at the supply voltage of 2.0 V, this adder is faster than the CMOS adder     

A charge-trapping-based technique to design low-voltage BiCMOSlogic circuits

New BiCMOS logic circuits employing a charge trapping technique are presented. The circuits include an XOR gate and an adder. Submicrometer technologies are used in the simulation and the circuits' performances are comparatively evaluated with the CMOS and that of the recently reported circuits. The proposed circuits were fabricated using a standard 0.8-μm BiCMOS process. The experimental results obtained from the fabricated chip have verified the functionality of the proposed logic gates     

Low-power SRAM design using half-swing pulse-mode techniques

This paper describes a half-swing pulse-mode gate family that uses reduced input signal swing without sacrificing performance. These gates are well suited for decreasing the power in SRAM decoders and write circuits by reducing the signal swing on high-capacitance predecode lines, write bus lines, and bit lines. Charge recycling between positive and negative half-swing pulses further reduces the power dissipation. These techniques are demonstrated in a 2-K×16-b SRAM fabricated in a 0.25-μm dual-V_t CMOS technology that dissipates 0.9 mW operating at 1 V, 100 MHz, and room temperature. On-chip voltage samplers were used to probe internal nodes     

Logical Effort理论在电路设计中的应用

介绍了一种对于包含较长互连线的CMOS电路的优化方法,该方法是在Logical Effort理论基础上加入互联电阻模型得到的。这是一种简单的延迟模型,非常适合于快速而又有效的手工计算。有助于快速的预测电路的最小延迟,并以此优化电路的结构和逻辑门的尺寸。通过仿真证明了,当逻辑结构不是简单的反相器时,一样可以通过带互联电阻模型的Logical Effort模型得到简单的优化方案。     

A new methodology for design of BiCMOS gates and comparison withCMOS

A gate comparison methodology is presented to accurately compare the performance of an arbitrary BiCMOS logic gate with a pure CMOS gate. The concept of the sizing plane (SP) is introduced as a geometrical framework in which the gate comparison methodology is represented. The sizing plane is also shown to be an elegant platform to represent the constraints and tradeoffs in BiCMOS gate design and this is demonstrated by an example for a 1-μm BiCMOS technology. To illustrate the comparison methodology, BiCMOS and CMOS gates are fabricated in a 2-μm BiCMOS technology. The measured performance results are presented and interpreted using the sizing plane. A technology comparison methodology is proposed that predicts the relative performance of a BiCMOS versus a pure CMOS implementation of any arbitrary block of digital logic     

Very low-voltage analog signal processing based on quasi-floating gate transistors

A novel design principle for very low-voltage analog signal processing in CMOS technologies is presented. It is based on the use of quasi-floating gate (QFG) MOS transistors. Similar to multiple input floating gate (MIFG) MOS transistors, a weighted averaging of the inputs accurately controlled by capacitance ratios can be obtained, which is the basic operating principle. Nevertheless, issues often encountered in MIFG structures, such as the initial charge trapped in the floating gates or the gain-bandwidth product degradation, are not present in QFG configurations. Several CMOS circuit realizations using open- and closed-loop topologies, have been designed. They include analog switches, mixers, programmable-gain amplifiers, track and hold circuits, and digital-to-analog converters. All these circuits have been experimentally verified, confirming the usefulness of the proposed technique for very low-voltage applications.     

Emulating switch-level models of CMOS circuits

This paper presents a method for emulating switch-level models of CMOS circuits using FPGAs. In this method, logic gates are used to model switch-level circuits without any abstraction. In contrast to the abstraction methods for which transistors are grouped together to form gates, in this method, gates are grouped together to form the switch models of transistors. The method presented in this paper, unlike the abstraction methods, can emulate many important features of switch-level models, such as bi-directional signal propagation and variations in driving strength. In order to attain a better utilization of FPGA resources a mixed-mode emulation approach has been used. In this approach parts of the circuit are emulated at the switch-level while the remaining parts of the circuit are emulated at the gate-level. The experimental results show that the presented emulation-based approach could be significantly faster than existing simulation-based approaches. The analytical performance estimation shows that the speed-up grows with the circuit size and is workload dependent.     

Graphene nanoribbon crossbar architecture for low power and dense circuit implementations

Crossbar array is a promising nanoscale architecture which can be used for logic circuit implementation. In this work, a graphene nanoribbon (GNR) based crossbar architecture is proposed. This design uses parallel GNRs as device channel and metal as gate, source and drain contacts. Schottky-barrier type graphene nanoribbon field-effect transistors (SB-GNRFETs) are formed at the cross points of the GNRs and the metallic gates. Benchmark circuits are implemented using the proposed crossbar, Si-CMOS and multi-gate Si-CMOS approaches to evaluate the performance of the crossbar architecture compared to the conventional CMOS logic design. The compact SPICE model of SB-GNRFET was used to simulate crossbar-based circuits. The CMOS circuits are also simulated using 16 nm technology parameters. Simulation results of benchmark circuits using SIS synthesis tool indicate that the GNR-based crossbar circuits outperform conventional CMOS circuits in low power applications. Area optimized cell libraries are implemented based on the asymmetric crossbar architecture. The area of the circuit can be more reduced using this architecture at the expense of higher delay. The crossbar cells can be combined with CMOS cells to exhibit better performance in terms of EDP.     

A new approach to power estimation and reduction in CMOS digital circuits

Modelling and optimization of dynamic capacitive power consumption in digital static CMOS circuits, taking into consideration a reason of a gate switching—gate control mode, is discussed in the present paper. The term ‘gate control mode’ means that a number and type of signals applied to input terminals of the gate have an influence on total amount of energy dissipated during a single switching cycle. Moreover, changes of input signals, which keep the gate output in a steady state, can also cause power consumption. Based on this observation, complex reasons of power losses have been considered. In consequence, the authors propose a new model of dynamic power consumption in static CMOS gates. Appropriate parameters’ calculation method for the new model was developed. The gate power model has been extended to logic networks, and consequently a new measure of the circuit activity was proposed. Switching activity, which is commonly used as a traditional measure, characterizes only the number of signal changes at the circuit node, and it is not sufficient for the proposed model. As the power consumption parameters of CMOS are dependent on their control mode, the authors used probability of the node control mode as a new measure of the circuit activity. Based on the proposed model, a procedure of combinational circuit optimization for power dissipation reduction has been developed. The procedure can be included in a design flow, after technology mapping. Results of the power estimation received for some benchmark circuits are much closer to SPICE simulations than values obtained for other methods. So the model proposed in this study improves the estimation accuracy. Additionally, we can save several percent of the consumed energy.