改进混洗蛙跳算法的软硬件划分方法研究

本文将混洗蛙跳算法应用于软硬件划分,提出一种新型的软硬件划分方法。针对混洗蛙跳算法应用于离散型问题时普遍存在的种群更新过慢、算法寻优方向盲目等问题,本文采用随机步长来改进青蛙种群的迁移行为,采用子种群内进化与全局混洗进化相结合的策略改进盲目全局寻优的情况,并根据无效迭代次数来提前终止迭代以提高算法效率。在划分实验中,改进后的算法的平均最优解比原始算法减小了17.4%～73.3%,平均硬件面积比原始算法大对不同结点数的随机DAG图4.32%～5.81%,平均仿真执行时间只有原算法的42.7%～64.0%。改进后算法在寻优能力和收敛速度上均优于原始算法,可更高效地完成软硬件划分任务。      

基于EGA与Alopex算法的非可微函数混合全局优化算法

遗传算法是一种全局化算法,能以较大概率搜索到全局最优解。本文将Alopex算子嵌入到保留最优个体遗传算法（EGA）中,对非可微或求导困难函数从而得到既能以较大概率搜索全局极值,又能进行局部细致搜索的混合全局优化算法;并对其全局收敛性和计算效率作了证明与分析。数值计算结果表明该算法优于求解函数优化的EGA和Alopex算法。     

基于蛙跳算法的模糊图像复原

为了提高模糊图像复原后的清晰度,提出蛙跳算法。将蛙群体分成若干个族群,每个族群包含若干只青蛙,每次进化只更新最差青蛙的位置。为防止解空间收缩,对最优个体进行高斯变异算子操作,同时设定阈值策略对蛙跳各维变量进行指导性更新。建立模糊图像复原模型,用蛙跳算法非线性映射特性建立模糊图像与复原的函数关系,使模糊图像复原的解最终收敛于泊松统计的最大似然解。建立了复原评价指标。仿真实验结果表明,与其他算法相比,蛙跳算法复原较清晰,改善百分比最大,同时耗时最少。     

基于函数复杂度的自适应模拟退火和禁忌搜索新算法

在求解多峰复杂函数的过程中,传统的模拟退火算法和禁忌搜索算法经常出现算法快速收敛于局部最优解、后期收敛速度变慢和搜索能力变差等问题.为解决这些问题,本文给出函数复杂度的定义,并提出基于函数复杂度的自适应模拟退火和禁忌搜索算法.该算法首先根据函数复杂度自适应调整步长控制参数,然后根据调整后步长求得函数的粗糙解,在此基础上再使用初始步长求得全局最优解.实验表明,该算法不仅可以跳出局部最优解的限制,并且减少了迭代次数,有效地提高了全局和局部搜索能力.     

针对摄像机矩阵估计的增强连续禁忌搜索方法

摄像机矩阵估计是机器视觉的一个重要问题。在2范数误差代价函数模型下,最小二乘法简单而有效,但因误差代价函数非凸,容易陷入局部最优。在无穷范数误差代价函数模型下,凸优化方法理论上可以获得全局最优,但计算效率较低,其计算耗时随着问题规模的增大而急剧增加。现代优化论中的增强连续禁忌搜索（Enhanced continu-ous taboo search,ECTS）方法具有逃离局部最优的优良性质,因此本文在2范数误差代价函数模型下提出一种针对摄像机矩阵估计的ECTS算法。在ECTS置信区间序列构造及最大置信区间选择环节,本文提出了一种非迭代的方法获取包含全局最优解的凸包。在增强禁忌搜索环节,本文提出了一种基于伪凸函数的候选解邻域构造方法。同时,给出了本文算法以概率1收敛于全局最优的理论证明。对虚拟场景和真实场景的实验结果表明本文算法可以快速获取摄像机矩阵估计的全局最优解。     

基于可见光的自适应混合蛙跳定位算法

可见光通信具有绿色、节能、成本低等优点,比较适合应用于室内定位。提出一种基于可见光通信的自适应混合蛙跳室内定位算法,该算法通过到达时间(TOA)算法和最小二乘算法进行初始定位,得到未知定位点的估计位置解集,再利用自适应混合蛙跳算法搜索未知定位点的最优位置。该算法具有较强的全局搜索能力,不易陷入局部最优,能够得到较高精度的定位结果。仿真结果表明,该算法比传统TOA定位算法的定位误差小,说明该算法提高了室内定位的精度。     

基于自适应蛙跳算法的图像增强研究

针对图像增强的特点,提出自适应蛙跳算法。首先通过自适应调整惯性权重策略确定个体选择的概率,适应度值越小,被选择的概率越大;接着将青蛙位置差值来动态扰动群体,在较优族群内进行精细搜索,在较差族群内进行广泛搜索来加快找到全局最优解;最后采用非完全Beta函数来确定图像增强过程。实验仿真结果得出:该算法对图像增强具有清晰度高、抑制噪声能力强等特点。     

一种非线性回归模型参数估计的混合基因算法

提出了一种新的结合可变多面体法和基因算法的混合基因算法(HGA),它通过对问题的解空间交替进行全局和局部搜索,达到快速收敛至全局最优解,较好地解决了基因算法在达到全局最优解前收敛慢的问题。非线性回归模型参数估计的实验表明该算法具有较好的通用性和有效性。     

一种矩形邻域结构的教学优化算法

为了克服原始教学优化算法在求解复杂多峰函数时全局寻优精度不高和过早收敛的缺点,提出一种矩形邻域结构和个体扰动的教学优化算法.算法将种群空间设计为矩形结构,个体的矩形邻域由矩形厚度和围绕其的矩形区域个体决定,教和学两个阶段都使用邻域最优个体引导搜索,加强了算法勘探新解和开发局部最优解的能力;为了防止算法过早陷入局部最优,增加了基于搜索边界信息引导的个体扰动阶段,使得种群即使在进化的后期仍能保持较好的多样性.对带有偏移和旋转的复杂函数进行仿真测试,结果表明新算法在求解精度和稳定性方面,在绝大多数情况下优于原始教学算法和其他一些近来的优秀改进教学算法.     

均匀搜索粒子群算法

针对基本粒子群优化算法容易陷入局部最优解的问题,本文定义了PSO粒子搜索中心的概念,并对其随机状态下粒子搜索中心在全局最优解与局部最优解之间的概率密度进行了计算,在此基础上提出了粒子搜索中心在两个最优解之间均匀分布的均匀搜索粒子群算法,并通过7个Benchmark函数与基本PSO算法进行了对比实验及算法分析,实验分析结...     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.