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1.
Si基单片集成850nm光接收芯片研究   总被引:6,自引:4,他引:2  
设计并制备了一种Si基单片集成850nm光接收芯片,包括"P+/N-EPI/BN+"结构的光电探测器(PD)、跨阻前置放大电路及其后续处理电路。分析了PD的结构,并对其光谱响应及频率响应进行模拟,在2.0V偏压下,PD在850nm的响应度为0.131A/W,截止频率为400 MHz。采用0.5μm BCD(bipolar、CMOS和DMOS)工艺流片,光接收芯片面积约为900μm×1 100μm。测试结果表明,PD暗电流为pA量级,响应度为0.12A/W。光接收芯片在155 Mb/s速率及误码率(BER)小于10-9情况下,灵敏度为-12.0dBm;在622 Mb/s速率及BER小于10-9情况下,灵敏度为-10.0dBm,并能得到清晰的眼图。将该光接收芯片封装后接入光接收模块,进行点对点光互联实验,获得很好的光信号通路。  相似文献   

2.
A high performance monolithic WDM receiver is demonstrated. The chip receives eight optical channels spaced by 200 GHz. An optical amplifier at the input of the device boosts the incoming signal. A fibre insertion DC responsivity of 0.5 A/W and crosstalk below -20 dB are achieved. The receiver has a small signal bandwidth of 3.5 GHz  相似文献   

3.
This paper presents a realization of a silicon-based standard CMOS, fully differential optoelectronic inte grated receiver based on a metal-semiconductor-metal light detector (MSM photodetector). In the optical receiver, two MSM photodetectors are integrated to convert the incident light signal into a pair of fully differential photo generated currents. The optoelectronic integrated receiver was designed and implemented in a chartered 0.35 μm, 3.3 V standard CMOS process. For 850 nm wavelength, it achieves a 1 GHz 3 dB bandwidth due to the MSM pho todetector's low capacitance and high intrinsic bandwidth. In addition, it has a transimpedance gain of 98.75 dBΩ, and an equivalent input integrated referred noise current of 283 nA from 1 Hz up to -3 dB frequency.  相似文献   

4.
孙帼丹  王荣  蒲涛  郑吉林  熊锦添  方涛  甄飞 《中国激光》2012,39(12):1205002-114
提出了利用叠印啁啾光纤布拉格光栅(S-CFBG)实现宽谱微波信号光子信道化接收的方法。利用一个S-CFBG产生光频梳(OFC),接收的微波信号被强度调制器调制到OFC的各个载波上。第二个S-CFBG对不同的边带进行滤波,利用波分复用(WDM)解复用器进行信道分离,实现对宽谱微波信号频率的实时测量。该方法还可以同时检测不同射频(RF)载波上所携带的数据信息,无需传统的电本振源阵列,简化了系统结构。建立了测量范围为0~20GHz,测量精度为0.5GHz的宽谱微波信号信道化接收仿真系统。实现了不同RF频率上携带信息的实时同步检测,并对接收误码性能进行了分析。  相似文献   

5.
The authors describe a monolithic technology for integrating GaAs with Si bipolar devices and demonstrate that such integration can provide improved system performance without degrading individual devices. The technology has been used to implement a 1-GHz GaAs/Si optical receiver with an equivalent input noise current density of less than 3 pA/√Hz for midband operation, and less than 4.5 pA/√Hz at 1 GHz. In this receiver an interdigitated GaAs metal-semiconductor-metal (MSM) photodetector is combined with a transimpedance preamplifier fabricated in silicon bipolar technology. The measured dark current of the GaAs/Si photodetector is 7 nA. The measured pulse response of an experimental integrated receiver is less than 550 ps FWHM. The integrated front end provides a wideband, low-noise optical receiver for use in local optical interconnections and demonstrates the successful application of integrated GaAs-on-Si technology to optoelectronics  相似文献   

6.
报道了一种垂直入射的InP基InGaAs pin光电探测器,介绍了它的制备和测试方法并对器件所展示出的高效,高速,高线性度特性进行了分析。器件的暗电流密度在0和-5V偏压时分别为1.37×10-5 A/cm2和93×10-5 A/cm2;在1.55μm波长,-3V偏压下,器件的线性光响应高达28mW,相应的最大线性电流为17mA,响应度达到0.61A/W(无减反射膜);在-5V偏压下,器件获得高达17.5GHz的3dB带宽。  相似文献   

7.
A 7-channel imaging diversity receiver based on current-summing is implemented in a 180 nm CMOS technology for broadband free-space optical (FSO) multi-input/multi-output (MIMO) communication. Each channel employs a low input-impedance current mirror (CM) as the input stage, which allows the implementation of direct current-summing for equal-gain combining (EGC). The summed current signal drives a second stage transimpedance amplifier (TIA) to generate the output voltage. Electrical characterization was performed using a photodiode emulation circuit and chip-on-board FR-4 assembly, demonstrating a total transimpedance gain of 62 dBΩ, −3 dB bandwidth of 1.2 GHz, and eye diagrams up to 2 Gb/s for 0.25 pF photodiode capacitance. The theoretical sensitivity of the imaging receiver is −16.8 dBm for a bit error rate (BER) of 10−9 at a photodetector responsivity of 0.4 A/W. The simulated power consumption for a single front-end amplifier circuit is 4.2 mW, and for the second stage TIA is 10.3 mW from a single 1.8 V supply. The diversity receiver is flip-chip compatible to enable hybrid integration to a custom InGaAs photodetector array.  相似文献   

8.
The authors report the first monolithically integrated wide-bandwidth lossless tap-that is, an optical semiconductor amplifier followed by a colinear reverse-biased waveguiding photodetector with fiber-coupled input and output. The integration was achieved by using off-axis selective epitaxial growth of ridge waveguides on a patterned dielectric layer. The tilted facets produced by the off-axis growth, along with photodetector absorption, serve to reduce the effective facet reflectivity to -36 dB without any antireflection coating. By adjusting the length of the absorbing photodetector section, part or all of the amplified light may be absorbed, allowing the device to function respectively as a lossless tap or an optical preamplifier. A lossless tap with an electrical bandwidth of 7 GHz, a responsivity of 26 A/W, and a fiber-to-fiber gain of 3 dB is shown to have a receiver sensitivity of -22 dB at 3 Gb/s  相似文献   

9.
Tzeng  L.D. Frahm  R.E. 《Electronics letters》1988,24(18):1132-1134
A wide bandwidth low noise pinFET receiver has been fabricated and characterised for optical preamplifier applications. The receiver uses a low capacitance planar pin diode as the photodetector. A bandwidth of 7.08 GHz was measured. The measured input noise current for the receiver front-end is lower than 12 pA/√(f). Using a 1.3 μm DFB laser as the transmitter, at a data rate of 4 Gbit/s, the measured receiver sensitivity is -25.5 dBm with a bit-error-rate of 1×10 -9. A set of two of such receivers has also been tested in a 1.3 μm polarisation-insensitive optical preamplifier system experiment. The measured receiver sensitivity, including an optical insertion loss of 1.5 dB, is -29.3 dBm  相似文献   

10.
提出了一种可应用于高速光通信和光互连的新型高带宽、高灵敏度差分光接收机.其中,高带宽和高灵敏度分别通过输入负载平衡的全差分跨阻前置放大器和将入射光信号转换成一对差分光生电流信号的两个光电探测器来实现.与常用光接收机相比,这种新型光接收机无任何附加成本.设计了一种相应的、与0.35μm标准CMOS工艺完全兼容的光电集成接收机.其中,光电探测器采用面积为60μm×30μm、结电容为1.483pF的插指型p+/n-well/p-substrate光电二极管.仿真结果表明:该光电集成接收机的带宽为1.37GHz;跨阻增益为81.9dBΩ;面积为0.198mm2;数据传输率至少可达2Gb/s;对于215-1位的输入伪随机码序列(PRBS),在误码率为10-12条件下,灵敏度至少可达-13dBm.  相似文献   

11.
Characteristics of a two-electrode DFB laser filter are studied both theoretically and experimentally. Using a matrix analysis of spontaneous emission, a continuous tuning range of 6.7 Å is achieved by changing both net field gains of the two electrodes. A total discontinuous tuning range of over 10 nm comprising alternating mode jumps and continuous tuning range of 4 Å are measured experimentally. The laser filter presents a FWHM bandwidth of 5 GHz which depends on the optical input power. In addition, it is demonstrated that a DFB laser filter can act as a frequency discriminator/photodetector, i.e., a narrow-band FM receiver, with a uniform bandwidth of 1.5 GHz. Using the two-electrode DFB laser for both transmitter and receiver, a two-channel FSK-WDM transmission system utilizing the discontinuous tuning range is reported. The advantage of such a device is the simplicity as compared to the heterodyne technique  相似文献   

12.
In this paper, high-speed traveling-wave electroabsorption modulators (TW-EAMs) with strain-compensated InGaAsP multiple quantum wells as the absorption region for analog optical links have been developed. A record-high slope efficiency of 4/V, which is equivalent to a Mach-Zehnder modulator with a V/sub /spl pi// of 0.37 V and a high extinction ratio of > 30 dB/V have been measured. A detailed study of the nonlinearity and the spurious-free dynamic range (SFDR) is presented. By optimizing the bias voltage and the input optical power, the SFDR can be improved by 10-30 dB. After minimizing the third-order distortion, an SFDR as high as 128 dB-Hz/sup 4/5/ is achieved at 10 GHz. A simple link measurement was made using this EAM and an erbium-doped fiber amplifier and a 50-/spl Omega/ terminated photodetector. At 10 GHz, a link gain of 1 dB is achieved at a detected photocurrent of 7.6 mA with higher gains at lower frequencies. The dependence of link gains on bias voltage, input optical, and radio frequency powers are investigated in detail.  相似文献   

13.
Based on thermionic emission theory,a model of a 6H-SiC metal-semiconductor-metal (MSM) ultraviolet photodetector is established with the simulation package ISE-TCAD.A device with 3μm electrode width (W) and 3μm electrode spacing (L) is simulated.The findings show that the MSM photodetector has quite a low dark current of 15 pA at 10 V bias and the photocurrent is two orders of magnitude higher than the dark current.The influences of different structures on dark and illuminated current-voltage characteristics of the MSM photodetector are investigated to optimize the device parameters.Simulation results indicate that the maximum photocurrent and the highest ratio of photocurrent to dark current at 15 V bias are 5,3 nA and 327 with device parameters of W = 6μm,L=3μm and W =3μm,L = 6μm,respectively.  相似文献   

14.
A novel tunable photonic microwave notch filter with negative and positive coefficients is proposed and experimentally demonstrated. The coefficients can be achieved by polarization modulation along with an electrical signal. The two polarization-modulated signals, which have a relative time delay, are combined, and detected by a photodetector. The transfer response of the filter shows a very stable operation irrespective of the coherence length of the source used. Moreover, the free spectral range of the filter, which shows a sharp notch, can be changed by using a tunable differential group delay generator over the range of 3.16-4.31 GHz  相似文献   

15.
A novel approach to generating linearly chirped microwave pulses in the optical domain based on spectral shaping and linear frequency-to-time mapping is proposed and experimentally demonstrated. In the proposed system, the spectrum of a femtosecond pulse generated by a mode-locked fiber laser is spectrum-shaped by an optical filter that consists of two superimposed chirped fiber Bragg gratings (SI-CFBGs) with different chirp rates. The SI-CFBGs form a Fabry-Perot cavity with a cavity length linearly dependent on the resonance wavelength, thus a spectral response with an increased or decreased free spectral range is generated. A chirped microwave pulse with the pulse shape identical to the shaped spectrum is obtained at the output of a high-speed photodetector thanks to the frequency-to-time mapping in a dispersive device. The proposed technique is experimentally demonstrated, a linearly chirped microwave pulse with a central frequency of 15 GHz and a chirp rate of 0.0217 GHz/ps is experimentally generated.  相似文献   

16.
In this paper, we propose an approach to generate and distribute two wide bands of continuously tunable millimeter-wave (mm-wave) signals using an optical phase modulator and a fixed optical notch filter. We demonstrate theoretically that the odd-order electrical harmonics are cancelled and even-order electrical harmonics are generated at the output of a photodetector when the optical carrier is filtered out from the phase-modulated optical spectrum. Analysis shows that dispersion compensation is required in order to maintain the suppression of the odd-order electrical harmonics, in order to eliminate signal fading of the generated electrical signal when the optical signal is distributed using conventional single-mode optical fiber. It is experimentally demonstrated that, when the electrical drive signal is tuned from 18.8-25 GHz, two bands of mm-wave signals from 37.6 to 50 GHz and from 75.2 to 100 GHz with high signal quality are generated locally and remotely. This approach does not suffer from the direct current (dc) bias-drifting problem observed when an optical intensity modulator is used.  相似文献   

17.
This paper describes an enhanced performance version of a high-speed burst-mode compatible optical receiver and its application to 622-Mb/s optical bus operation in conjunction with an instantaneous clock recovery scheme. The receiver is fabricated in a 12 GHz ft silicon bipolar technology and consists of a differential transimpedance amplifier with an auto-threshold level controller and a high-speed quantizer. Using an InGaAs avalanche photodiode, the typical burst mode sensitivity is around -34 dBm (10-9 BER) at bit rates up to 1.5 Gb/s with a dynamic range of 26 db for both pseudorandom and burst signals. The results using a laser beam modulated by a high-speed external modulator indicate that the receiver can be operated at bit rates higher than 2 Gb/s. With a worst-case self-resetting time <50 ns for the threshold control circuit, the receiver is usable for optical packet communication where data signals with varying optical power are employed. This receiver was demonstrated in a 622-Mb/s optical bus application where the clock signal was recovered from the packet data signal using a novel high-speed CMOS instantaneous clock recovery IC  相似文献   

18.
改进型双二进制归零码信号在标记交换系统中的新应用   总被引:6,自引:2,他引:4  
提出以改进型双二进制归零码(MD-RZ)信号作为标记,分别采用差分相移键控非归零码(NRZ-DPSK)信号和差分正交相移键控非归零码(NRZ-DQPSK)信号作为载荷进行正交调制的新方案.然后提出了一种从标记信号中提取和恢复时钟的简单方案.比较了背对背系统中2.5 Gbit/s的MD-RZ标记叠加到10 Gbit/s的NRZ-DPSK载荷和20 Gbit/s的NRZ-DQPSK载荷上的频谱特性,证明了MD-RZ标记占空比越大,光分组信号的频带利用率越高.采用传统的二进制强度调制-直接检测(IM-DD)系统的接收机检测得到了背对背系统中不同占空比的2.5 Gbit/s MD-RZ标记的眼图.结果表明,若采用色散补偿技术,两种光分组信号中的MD-RZ标记能够在长距离传输时克服接收端眼图的失真;当入纤功率值高于18 dBm时,占空比取值越大,MD-RZ标记的眼开度代价具有越高的传输鲁棒性.  相似文献   

19.
A 10-Gb/s 90-dBOmega optical receiver analog front-end (AFE), including a transimpedance amplifier (TIA), an automatic gain control circuit, and a postamplifier (PA), is fabricated using a 0.18-mum CMOS technology. In contrast with a conventional limiting amplifier architecture, the PA is consisted of a voltage amplifier followed by a slicer. By means of the TIA and the PA codesign, the receiver front-end provides a -3-dB bandwidth of 7.86 GHz and a gain bandwidth product (GBW) of 248.5 THz-Omega. The tiny photocurrent received by the AFE is amplified to a differential voltage swing of 900 mVpp when driving 50-Omega output loads. The measured input sensitivity of the optical receiver is -13 dBm at a bit-error rate of 10-12 with a 231-1 pseudorandom test pattern. The optical receiver AFE dissipates a total power of 199 mW from a 1.8-V supply, among which 35 mW is consumed by the output buffer. The chip size is 1300 mumtimes1796 mum  相似文献   

20.
A new technique to generate and distribute a wide-band continuously tunable millimeter-wave signal using an optical external modulator and a wavelength-fixed optical notch filter is proposed. The optical intensity modulator is biased to suppress the odd-order optical sidebands. The wavelength-fixed optical notch filter is then used to filter out the optical carrier. Two second-order optical sidebands are obtained at the output of the notch filter. A millimeter-wave signal that has four times the frequency of the microwave drive signal is generated by beating the two second-order optical sidebands at a photodetector. Since no tunable optical filter is used, the system is easy to implement. A system using an LiNbO/sub 3/ intensity modulator and a fiber Bragg grating filter is built. A stable and high spectral purity millimeter-wave signal tunable from 32 to 50 GHz is obtained by tuning the microwave drive signal from 8 to 12.5 GHz. The integrity of the generated millimeter-wave signal is maintained after transmission over a 25-km standard single-mode fiber. Theoretical analysis on the harmonic suppression with different modulation depths and filter attenuations is also discussed.  相似文献   

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