Catalytic nitridation preparation of high-performance Si3N4(w)-SiC composite using Fe2O3 nano-particle catalyst: Experimental and DFT studies

The complete conversion from Si into Si₃N₄ was achieved after 2 h nitridation at 1400 °C by using in-situ formed Fe₂O₃ nano-particles (NPs) as a catalyst. Such a synthesis condition was remarkably milder than that (>1450 °C for many hours) required by the conventional Si nitridation method. Density functional theory (DFT) calculations suggest that Fe₂O₃ catalyst accelerates the Si nitridation via weakening the bond strength of absorbed N₂ molecule. Furthermore, Si₃N_4(w)-SiC composites prepared by the present catalytic nitridation method showed excellent high-temperature properties including modulus of rupture (MOR of 29.9 MPa at 1400 °C), thermal shock resistance (residual MOR percentage of 50% at ΔT = 1300 °C), as well as good oxidation resistance and cryolite corrosion resistance against molten cryolite. It can be concluded that, Fe₂O₃ NPs not only greatly accelerated the Si nitridation and Si₃N₄ formation, but also facilitated the epitaxial growth of reinforcement phase of Si₃N₄ whisker in the Si₃N_4(w)-SiC composites.     

Effect of pre-oxidation on the microstructure,mechanical and dielectric properties of highly porous silicon nitride ceramics

Highly porous Si₃N₄ ceramics have been fabricated via freeze casting and sintering. The as-sintered samples were pre-oxidized at 1200–1400 °C for 15 min. The effect of pre-oxidation temperature on the microstructure, flexural strength, and dielectric properties of porous Si₃N₄ ceramics were investigated. As the pre-oxidation temperature increased from 1200 °C to 1400 °C, firstly, the flexural strength of the pre-oxidized specimens remained almost constant at 1200 °C, and then decreased to 14.2 MPa at 1300 °C, but finally increased to 25.6 MPa at 1400 °C, while the dielectric constant decreased gradually over the frequencies ranging from 8.2 GHz to 12.4 GHz. This simple process allows porous Si₃N₄ ceramics to have ultra-low dielectric constant and moderate strength, which will be feasible in broadband radome applications at high temperatures.     

In situ synthesis of Si2N2O/Si3N4 composite ceramics using polysilyloxycarbodiimide precursors

In situ synthesis of Si₂N₂O/Si₃N₄ composite ceramics was conducted via thermolysis of novel polysilyloxycarbodiimide ([SiOSi(NCN)₃]_n) precursors between 1000 and 1500 °C in nitrogen atmosphere. The relative structures of Si₂N₂O/Si₃N₄ composite ceramics were explained by the structural evolution observed by electron energy-loss spectroscopy but also by Fourier transform infrared and ²⁹Si-NMR spectrometry. An amorphous single-phase Si₂N₂O ceramic with porous structure with pore size of 10–20 μm in diameter was obtained via a pyrolyzed process at 1000 °C. After heat-treatment at 1400 °C, a composite ceramic was obtained composed of 53.2 wt.% Si₂N₂O and 46.8 wt.% Si₃N₄ phases. The amount of Si₂N₂O phase in the composite ceramic decreased further after heat-treatment at 1500 °C and a crystalline product containing 12.8 wt.% Si₂N₂O and 87.2 wt.% Si₃N₄ phases was obtained. In addition, it is interesting that residual carbon in the ceramic composite nearly disappeared and no SiC phase was observed in the final Si₂N₂O/Si₃N₄ composite.     

Dielectric properties of Si3N4–SiCN composite ceramics in X-band

Si₃N₄–SiCN composite ceramics were successfully fabricated through precursor infiltration pyrolysis (PIP) method using polysilazane as precursor and porous Si₃N₄ as preform. After annealed at temperatures varying from 900 °C to 1400 °C, the phase composition of SiCN ceramics, electrical conductivity and dielectric properties of Si₃N₄–SiCN composite ceramics over the frequency range of 8.2–12.4 GHz (X-band) were investigated. With the increase of annealing temperature, the content of amorphous SiCN decreases and that of N-doped SiC nano-crystals increases, which leads to the increase of electrical conductivity. After annealed at 1400 °C, the average real and imaginary permittivities of Si₃N₄–SiCN composite ceramics are increased from 3.7 and 4.68 × 10^?3 to 8.9 and 1.8, respectively. The permittivities of Si₃N₄–SiCN composite ceramics show a typical ternary polarization relaxation, which are ascribed to the electric dipole and grain boundary relaxation of N-doped SiC nano-crystals, and dielectric polarization relaxation of the in situ formed graphite. The Si₃N₄–SiCN composite ceramics exhibit a promising prospect as microwave absorbing materials.     

Graded Si3N4 ceramics with hard surface and tough core by two-step hot pressing

Graded Si₃N₄ ceramics with hard surface and tough core were prepared by two-step hot pressing with the homogenous starting composition. The inner Si₃N₄ layer was firstly hot-pressed at 1800 °C, subsequently covered with Si₃N₄ powders on both sides, and finally hot-pressed at 1600 °C. After two-step hot pressing, the resulting ceramics exhibited a zoned microstructure, differentiated by the phase assemblage of Si₃N₄ and grain size. The outer layers were well bonded to the inner layer. The outer layer exhibited bimodal and fine-grained microstructure, whereas the inner layer exhibited bimodal and coarse-grained microstructure. Vickers hardness of outer and inner layers were 18.1±0.2 GPa and 16.0±0.2 GPa, respectively, and fracture toughness were 4.2±0.1 MPa m^1/2 and 5.5±0.2 MPa m^1/2, respectively.     

Nitridation of silicon powder studied by XRD, 29Si MAS NMR and surface analysis techniques

The nitridation of elemental silicon powder at 900–1475 °C was studied by X-ray photoelectron spectroscopy (XPS), X-ray excited Auger electron spectroscopy (XAES), XRD, thermal analysis and ²⁹Si MAS NMR. An initial mass gain of about 12% at 1250–1300 °C corresponds to the formation of a product layer about 0·2 μm thick (assuming spherical particles). XPS and XAES show that in this temperature range, the surface atomic ratio of N/Si increases and the ratio O/Si decreases as the surface layer is converted to Si₂N₂O. XRD shows that above 1300 °C the Si is rapidly converted to a mixture of α- and β-Si₃N₄, the latter predominating >1400 °C. In this temperature range there are only slight changes in the composition of the surface material, which at the higher temperatures regains a small amount of an oxidised surface layer. By contrast, in the interval 1400–1475 °C, the ²⁹Si MAS NMR chemical shift of the elemental Si changes progressively from about −80 ppm to −70 ppm, in tandem with the growth of the Si₃N₄ resonance at about −48 ppm. Possible reasons for this previously unreported change in the Si chemical shift are discussed. ©     

Improved thermal conductivity of sintered reaction-bonded silicon nitride using a BN/graphite powder bed

Sintered reaction-bonded silicon nitride (SRBSN) with improved thermal conductivity was achieved after the green compact of submicron Si powder containing 4.22 wt% impurity oxygen and Y₂O₃-MgO additives was nitrided at 1400 °C for 6 h and then post-sintered at 1900 °C for 12 h using a BN/graphite powder bed. During nitridation, the BN/10 wt% C powder bed altered the chemistry of secondary phase by promoting the removal of SiO₂, which led to the formation of larger, purer and more elongated Si₃N₄ grains in RBSN sample. Moreover, it also enhanced the elimination of SiO₂ and residual Y₂Si₃O₃N₄ secondary phase during post-sintering, and thus induced larger elongated grains, decreased lattice oxygen content and increased Si₃N₄-Si₃N₄ contiguity in final SRBSN product. These characteristics enabled SRBSN to obtain significant increase (∼40.7%) in thermal conductivity from 86 to 121 W ∙ m⁻¹ ∙ K⁻¹ without obvious decrease in electrical resistivity after the use of BN/graphite instead of BN as powder bed.     

Mechanical properties of Si3N4 ceramics from an in-situ synthesized a-Si3N4/β-Si3N4 composite powder

Sintered Si₃N₄ ceramics were prepared from an ɑ-Si₃N₄/β-Si₃N₄ whiskers composite powder in-situ synthesized via carbothermal reduction at 1400–1550 °C in a nitrogen atmosphere from SiO₂, C, Ni, and NaCl mixture. Reaction temperatures and holding time for the composite powder, and mechanical properties of sintered Si₃N₄ were investigated. In the synthesized composite powder, the in-situ β-Si₃N₄ whiskers displayed an aspect ratio of 20–40 and a diameter of 60–150 nm, which was mainly dependent on the synthesis temperature and holding time. The flexural strength, fracture toughness and hardness of the sintered Si₃N₄ material reached 794±136 MPa, 8.60±1.33 MPa m^1/2 and 19.00±0.87 GPa, respectively. The in-situ synthesized β-Si₃N₄ whiskers played a role in toughening and strengthening by whiskers pulling out and crack deflection.     

Low temperature pressureless sintering of dense silicon nitride using BaO-Al2O3-SiO2 glass as sintering aid

Dense Si₃N₄ ceramic with BaO-Al₂O₃-SiO₂ low temperature glass powders as sintering aids were prepared by pressureless sintering techniques at a relatively low temperature (1550 °C). Four kinds of glass powders of compositions melting at 1120 °C, 1300 °C, 1400 °C and 1500 °C, respectively, have been introduced as sintering aids. XRD results demonstrate that the BaO-Al₂O₃-SiO₂ glass powders reacted with BaAl₂O₄ and converted into hexagonal celsian, which is a high-temperature phase with melting point of 1760 °C, so being beneficial to the high temperature properties of the materials. In addition, a portion of α-Si₃N₄ transformed to rod like β-Si₃N₄ with high aspect ratio as shown by XRD and SEM analysis. The bulk density increased with the rise of the melting temperature of the BaO-Al₂O₃-SiO₂ glass powders, the sample obtained with the BaO-Al₂O₃-SiO₂ glass powder melting at 1500 °C reaching a maximum density of 98.8%, an high flexural strength (373 MPa) and a fracture toughness (4.8 MPa m^1/2).     

Synthesis and characterization of yttrium and ytterbium silicates from their oxides and an oligosilazane by the PDC route for coating applications to protect Si3N4 in hot gas environments

Environmental barrier coatings are required to protect Si₃N₄ against hot gas corrosion and enable its application in gas turbines, among which yttrium and ytterbium silicate-coatings stand out. Thus, the polymer-derived ceramic route was used to synthesize these silicates for basic investigations regarding their intrinsic properties from a mixture of Y₂O₃ or Yb₂O₃ powders and the oligosilazane Durazane 1800. After pyrolysis above 1200 °C in air, the silicates are predominant phases. The corrosion behaviour of the resulting composites was tested at 1400 °C for 80 h in moist environments. The material containing x₂-Yb₂SiO₅ and Yb₂Si₂O₇ undergoes the lowest corrosion rate (−1.8 μg cm⁻² h⁻¹). Finally, the processing of Y₂O₃/Durazane 1800 as well-adherent, crack-free and thick (40 μm) coatings for Si₃N₄ was achieved after pyrolysis at 1400 °C in air. The coating consisted of an Y₂O₃/Y₂SiO₅ top-layer and an Y₂O₃/Y₂Si₂O₇ interlayer due to the interaction of the coating system with the substrate.     

Si3N4-ZrB2 ceramics prepared at low temperature with improved mechanical properties

Si₃N₄-ZrB₂ ceramics were hot-pressed at 1500 °C using self-synthesized fine ZrB₂ powders containing 2.0 wt% B₂O₃ together with MgO-Re₂O₃ (Re = Y, Yb) additives. Both Si₃N₄ and ZrB₂ grains in the hot-pressed ceramics were featured with elongated and equiaxed morphology. The presence of elongated Si₃N₄ and ZrB₂ grains led to the partial texture of the ceramics under the applied pressure. Vickers hardness and fracture toughness of Si₃N₄-ZrB₂ ceramics with MgO-Re₂O₃ additives prepared at low temperature were about 19–20 GPa and 9–11 MPa m^1/2, respectively, higher than the reported values of Si₃N₄-based ceramics prepared at high temperature (1800 °C or above) under the same test method.     

Oxidation behaviour of Si3N4–TiN ceramics under dry and humid air at high temperature

The oxidation in air of Si₃N₄-based ceramics containing 35 vol.% of TiN secondary phase and different amounts of sintering additives has been studied at different temperatures up to 1400 °C in dry or humid environment. The oxidation starts by crystal growth of TiO₂ at the surface, then a multilayered scale develops under the rutile layer from 1000 °C. This subscale is composed of silicon nitride in which TiN particles are oxidized to agglomerates of rutile, glass and pores. The oxidation process is controlled by the matter transports, which take place in the intergranular phase. These transport phenomena are affected by the changes in distribution and composition of the glassy phase and by humidity which modifies the glass network structure and thus the in-diffusion rate. From 1200 °C, Si₃N₄ grains are also oxidized, the additional glass formed closes the residual porosities yielding scales more compact and developing an autoprotective behavior. At 1400 °C, glass phase crystallizes into cristobalite and the rutile top layer becomes discontinuous. Only composites with low amounts of sinter additives keep an autoprotective oxidation mode.     

Reclamation of used SiC grinding powder and its sintering characteristics

A process of recycling used abrasive SiC powder after grinding Si wafer was proposed to raw powder for sintering. The used SiC powder could be successfully converted to composite powders consisting of SiC particle and Si₃N₄ whisker via a heat treatment in N₂ atmosphere, in which iron oxide acted as a catalyst in the vapor–liquid–solid (VLS) formation of Si₃N₄. With the addition of 3 mass% Al₂O₃ and 1 mass% Y₂O₃, the composite powders sintered at 1900 °C for 2 h exhibited a 3-point bending strength of 626 ± 48 MPa and a fracture toughness of 3.9 ± 0.1 MPa m^1/2, which were significantly enhanced as compared with those of using recovered powder merely composed of SiC particle. The strength and fracture toughness of the sintered material could be improved by optimization of chemical and heat treatment parameters and controlling the amount of sintering additives and hot pressing conditions.     

Preparation and characterization of Si3N4-based composite ceramic tool materials by microwave sintering

Si₃N₄-based composite ceramic tool materials with (W,Ti)C as particle reinforced phase were fabricated by microwave sintering. The effects of the fraction of (W,Ti)C and sintering temperature on the mechanical properties, phase transformation and microstructure of Si₃N₄-based ceramics were investigated. The frictional characteristics of the microwave sintered Si₃N₄-based ceramics were also studied. The results showed that the (W,Ti)C would hinder the densification and phase transformation of Si₃N₄ ceramics, while it enhanced the aspect-ratio of β-Si₃N₄ which promoted the mechanical properties. The Si₃N₄-based composite ceramics reinforced by 15 wt% (W,Ti)C sintered at 1600 °C for 10 min by microwave sintering exhibited the optimum mechanical properties. Its relative density, Vickers hardness and fracture toughness were 95.73 ± 0.21%, 15.92 ± 0.09 GPa and 7.01 ± 0.14 MPa m^1/2, respectively. Compared to the monolithic Si₃N₄ ceramics by microwave sintering, the sintering temperature decreased 100 °C,the Vickers hardness and fracture toughness were enhanced by 6.7% and 8.9%, respectively. The friction coefficient and wear rate of the Si₃N₄/(W,Ti)C sliding against the bearing steel increased initially and then decreased with the increase of the mass fraction of (W,Ti)C., and the friction coefficient and wear rate reached the minimum value while the fraction of (W,Ti)C was 15 wt%.     

Mild hydrothermal formation and comparative coprecipitation route for EuTiNbO6 fine phosphor

Aeschynite-type EuTiNbO₆ fine phosphor with sufficient luminescence intensity was directly formed as homogeneous cuboid particles with high crystallinity in the range of 1–2 μm from precursor solution mixtures of EuCl₃, TiOSO₄, and NbCl₅ under weakly basic conditions via hydrothermal treatment at 240 °C for 5 h. The as-prepared aeschynite phase stably existed after heating at 1000–1400 °C for 1 h in air. Under excitation at wavelengths of 395 nm, among all samples before and after heating in air, the as-prepared EuTiNbO₆ fine crystals before heating emitted luminescence with the highest intensity in the red spectral region with strong red and weak orange light corresponding to ⁵D_0→⁷F₂ and ⁵D_0→⁷F₁ transitions of Eu³⁺, respectively. The amorphous coprecipitation powder crystallized into euxenite-type phase at 700–1000 °C and transformed into aeschynite-type phase at 1000–1200 °C. High-temperature heating at 1400 °C was essential for the coprecipitation powder to obtain almost a single phase of aeschynite-type EuTiNbO₆ and sufficient emission intensity.     

Microstructural and mechanical properties of porous Si3N4 carbon coated ceramic brazed with a cobalt-silicon filler

The Co_22.5Si_77.5 (at.%) braze was used to bond porous Si₃N₄ ceramics. The effects of brazing temperature on microstructure and the bonding strength of the joint were studied. The results reveal that no visible reaction layer was observed. The corresponding joint strength was low. In order to improve the joint strength a carbon coated modification of the porous Si₃N₄ substrate was suggested. The impact of this modification on the joint properties was examined. It was established that a SiC reaction layer with a thickness from ∼15 μm to ∼65 μm was formed at the interface and SiC nanowires were observed when the temperature increased from 1280 °C to 1340 °C. The maximum shear strength of the carbon coated and uncoated joints were 115 MPa and 44 MPa, respectively. The significant improvement of the joint strength was attributed to the SiC reaction layer and a strengthening by the presence of SiC nanowires. .     

A strategy for fabricating textured silicon nitride with enhanced thermal conductivity

C-axis textured Si₃N₄ with a high thermal conductivity of 176 W m⁻¹ K⁻¹ along the grain alignment direction was fabricated by slip casting raw α-Si₃N₄ powder seeded with near-equiaxed β-Si₃N₄ particles and Y₂O₃–MgSiN₂ as sintering additives in a rotating strong magnetic field of 12 T, followed by gas pressure sintering at 1900 °C for 12 h at a nitrogen pressure of 1 MPa. The green material reached a relative density of 57%, with slip casting and the sintered material exhibited a relative density of 99% and a Lotgering orientation factor of 0.98. The morphology of the β-Si₃N₄ seeds had little effect on the texture development and thermal anisotropy of textured Si₃N₄. The technique developed provides highly conductive Si₃N₄ with conductivity to the thickness direction, which is a major advantage in practical use. The technique is also simple, inexpensive and effective for producing textured Si₃N₄ with high thermal conductivity of over 170 W m⁻¹ K⁻¹.     

Spark plasma sintering of silicon nitride/barium aluminum silicate composite

Si₃N₄ based composites were successfully sintered by spark plasma sintering using low cost BaCO₃, SiO₂ and Al₂O₃ as additives. Powder mixtures were sintered at 1600–1800 °C for 5 and 10 min. Displacement-temperature-time (DTT) diagrams were used to evaluate the sintering behavior. Shrinkage curve revealed that densification was performed between 1100 and 1700 °C. The specimen sintered at 1700 °C showed the maximum relative density (99.8±0.1%), flexural strength (352±16 MPa), Vickers harness (11±0.1 GPa) and toughness (5.6±0.05 MPa m^1/2).     

Effect of seeding on the thermal conductivity of self-reinforced silicon nitride

Thermal conductivity of Si₃N₄ containing large β-Si₃N₄ particles as seeds for grain growth was investigated. Seeds addition promotes growth of β-Si₃N₄ grains during sintering to develop the duplex microstructure. The thermal conductivity of the material sintered at 1900 °C improved up to 106 W m⁻¹ K⁻¹, although that of unseeded material was 77 Wm⁻¹ K⁻¹. Seeds addition leads to reduction of the sintering temperature with developing the duplex microstructure and with improving the thermal conductivity, which benefits in terms of production cost of Si₃N₄ ceramics with thermal conductivity. ©     

Processing and mechanical properties of Si3N4 composites employing polymer-derived SiAlOC as sintering aid

Silicon nitride ceramics have been densified with polymer-derived SiAlOC sintering aid. Dense samples were prepared at relatively mild temperatures (1600 °C) from blends with 30 wt.% of pyrolysed SiAlOC additives. Decreasing the SiAlOC aid content to 15 wt.% resulted in porous Si₃N₄ samples (～85% rel. density). The properties of dense samples were influenced by the remaining SiAlOC glass (HV = 15.5 GPa, K_IC = 4 MPa m^1/2). Increasing the sintering temperature to 1780 °C for 5 min significantly changed the phase composition and properties of the composites. The major phase was O′-sialon in the sintered samples. Additional annealing of the samples at 1530 °C for 16 h further decreased the amount of the residual glassy phase and consequently affected the mechanical properties. The Vickers hardness of dense samples was 18.5 GPa and the fracture resistance ranged between 4.0 and 4.5 MPa m^1/2. The compressive creep test (1400 °C/100 MPa/24 h) of the SNA30-A sample sintered at 1600 °C for 30 min without an additional crystallisation step showed a promising low creep rate of 8.6 × 10^?8 s^?1. Further improvement of creep resistance is expected for the crystallised samples.