基于EPON的新型电力ONU的设计与应用

结合居民用电信息采集系统的需求及EPON技术的优点,设计了新的信息采集流程.详细介绍了一种具有实时信息采集功能的电力ONU的设计实现方法,其特点是采用了实抄与预抄相结合的软件方案.测试结果表明,系统平均响应时间在500ms以内.     

用电信息采集在用电监察管理中的现状研究

用电信息采集作为国家电网建设的重要战略部署,为用电系统提供了强大的数据支撑。这不仅使得用电网更具适应性和扩展性,同时也有利于用电监察管理。通过有效地解决电力的供需矛盾,用电信息采集系统使得电网能够平稳运行。基于这一背景,本文探讨了用电信息采集在用电监察管理中的现状,并对基于用电信息采集技术的用电监察管理工作进行了分析。同时,提出了一系列用电信息采集在用电监察中的管理措施,以期推动用电信息采集系统的建设。     

基于"大二层"的电力用电信息采集网络解决方案

目前用电信息采集业务数据承载网一般采用基于xSTP/RRPP协议的传统二层组网模式,虽在一定程度上满足了业务需求,但随着业务的深入开展,其可靠性差、扩展性不足等弊端日益凸显.文章提出了采用"大二层"网络技术,构建安全可靠、易扩展的电力用电信息采集网络解决方案,为用电信息采集网络的升级改造提供参考.     

智能用电信息采集管理系统优化策略探讨

随着我国经济的快速发展,人们的用电需求在不断增加,电网在我国也得到了广泛的发展与应用.但由于起步较晚,缺乏完善的基础设施,导致我国电力企业的用电信息采集与管理依然存有一定的缺陷和不足.因此,可在企业日常管理与服务时,引入智能用电信息采集管理系统对其进行相应的优化,能有效促进我国电力企业的服务及居民日常用电水平.近些年,在电力营销工作的不断发展中,企业经营理念与方式也逐渐受到影响,全国各地区的电力部分纷纷采用了智能用电信息采集管理系统,用来加强智能化配电台区与主站系统的建设.本文就智能用电信息采集管理系统的优化进行了相应的探讨.     

智能小区PON+PFTTH技术应用

电力光纤到户采用光纤复合低压电缆(OPLC),实现电力流和信息流的同步传输,是电力通信网在智能电网用电环节的延伸,是进行用电信息采集、智能用电双向互动、推动社会资源共享的必然选择。文章以"三网融合"建设为切入点,分析了电力智能小区采用光纤复合电缆构建的PON+PFTTH技术的网络,提出电力智能小区"三网融合"和"用电信息采集"业务解决方案,通过应用光纤复合电力电缆,解决了电力网"最后一公里"信息化建设问题,解决了智能电网终端用电环节信息化,自动化,互动化的需求。     

230 MHz电力无线专网通信终端设计与应用

IoT-G(Internet of Things-Grid)230 MHz是国家电网公司建设电力无线专网制定的体制标准之一.针对配用电业务终端的接入需求,基于IoT-G 230 MHz电力无线专网研发了远程通信终端,分别开展了软硬件设计、定时同步算法优化,以及性能测试,并选取用电信息采集业务进行挂网试点验证,结果表明该远程通信终端的性能指标满足测试规范的要求,能够承载用电信息采集业务.     

基于用电信息采集的用电监察管理应用研究

用电监察管理研究是国家电力应用管理标准逐步提高的重要体现.本文从我国当前电力资源管理全方位,自动化管理模式入手,对基于用电信息采集的用电监察管理应用进行研究,促进我国电力应用市场规范化程度进一步提升.     

基于物联网的用电信息采集系统

基于物联网的用电信息采集系统设计,以电力参数感知为核心,物联网技术为通讯方式,达到用户与用电物体的实时交互。文章分析了其系统架构,运行方式和硬件构成及软件构架,不仅实现了电力参数的实时感知,监控和分析,还有效的实现人与用电设备的交互,更利于电力用户选择合理的用电方式。     

用电采集成功率低的原因及提升对策

这些年以来,我国对电网的升级改造的力度不断加大,电网的自动化程度也越来越深,电力方面的企业的管理也越来越轻松,用电信息采集系统也随之不断升级发展.用户用电信息采集系统对于整个电力系统来说非常重要,在对电力系统的升级优化有着无比的优势,不过现在用电信息采集系统的技术还不够成熟,系统建设上面的经验不足,被现实中的各种原因影响,使得该系统在对电力信息采集的过程之中总是出现一些问题,导致采集成功率偏低,所以本文会对电力用户用电信息采集系统进行全面的分析,说明影响用电采集成功率的原因,并且笔者会提出一些建设性的意见来改变用电采集成功率低的现状,为提高用户用电信息采集的成功率贡献出自己的一份力量.     

用电信息采集系统通讯信道建设和研究

本文简要介绍了国内外用电信息采集系统建设的现状,重点通过对几种当前主流用电信息采集系统通信技术方案的比较分析,提出了适合各类电力用户的用电信息采集通信组网方案,确保科学组网、可靠通信。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.