横向场发射三极管

利用薄膜边缘场发射阴极设计的三极管、阴极、栅极和阳极是平面结构，因此极间电容小，适合应用于高速和高频电路。它在工艺上与半导体器件兼容，工艺比较简单，是真空微电子集成电路中的有源器件，它有着广泛的应用前景。     

电泳工艺制备阵列场发射阴极及其性能的研究

碳纳米管是理想的场发射冷阴极材料,阴极的图形阵列化是实现碳纳米管场发射显示器动态全彩视频显示的核心.三极管结构能够更好地进行矩阵寻址显示图像,且与常规的驱动电路相兼容,降低整体平板显示器件的制作成本.从实验出发,探索利用简单的电泳工艺制备图形化碳基薄膜阴极,采用与阴极成同一水平面的栅极的三极管结构,并对电泳的实验参数进行优化以提高阴极电压电流特性和发射的均匀性等问题,为场发射器件的制造提供优良的工艺基础.研究机械球磨和稀释悬浊液浓度对碳纳米管沉积均匀性的影响.实验结果表明稀薄的悬浊液的条件下可以在玻璃的银浆导电层上沉积较薄而均匀的碳纳米管膜,与丝网印刷工艺制备的阴极相比,均匀性更好,厚度更容易控制,具有更好的发射均匀性.测试图形化的阵列碳纳米阴极的三极管结构的场发射特性,发现当阳极电压保持在600 V,栅极电压接近500 V时,阳极电流能达到2.6 mA/cm2.荧光粉发光均匀,相比二极管结构具有更低的阈值电压,在亮度、均匀性和稳定性方面都有显著的优势.     

场发射显示器阴极的制备方法及研究现状

目前用于场发射显示器的阴极主要有尖锥场发射阵列阴极、金刚石薄膜、类金刚石薄膜和碳纳米管场发射阴极等。本文论述了这几种场发射阴极常用的制作方法、研究现状及其以后的发展方向,并提出,用新型材料薄膜冷阴极代替传统的尖锥场发射阵列阴极,是实现FEDs大尺寸、低成本的重要途径。     

集成真空微电子器件的制备方法

发射极极尖的锥尖是典型场发射真空微电子器件最好的物理结构,一般不是由标准的集成电路制备工艺制备的。本文提出利用共形薄膜填充小孔时自然形成的尖端作为模型来制备较尖的发射极。形成这个锥尖的方法不仅容易与制备阴极、二极管、三极管和更多电极器件的标准半导体工艺相结合,而且也能与器件结构内部所有电极自对准。本文将描述用于制备微电子三极管器件的基本工艺过程,然后给出怎样改变工艺才能制备出不同数量电极和独立的阴极结构。描述了初步实验结果,分析讨论了工艺重复性的估算。     

电泳淀积三极管结构的碳纳米管场发射显示阴极

本研究探索了一种电泳选域组装碳纳米管发射器到正栅极结构的衬底中作为三极管结构的场发射显示阴极的工艺.在这个工艺中,悬浊液中的碳纳米管在施加于栅极电极和阴极电极的电压的作用下移向并淀积到三极管结构的衬底中.同时,这个栅极电极的正电压能够排斥悬浊的碳纳米管,使栅极电极不吸附碳纳米管.实验结果表明,碳纳米管选域组装到栅极孔洞中去,并且每一个孔洞中碳纳米管具有相同的组装密度.该工艺成本低、可实现大面积阴极的制备,是一种在制备三极管型碳纳米管场发射显示阴极中可供选择的工艺.     

新型金刚石衬底场发射显示

《FlatPanelDisplayNews》1994年第2期载文报道了一种场发射显示技术有望在低成本下做成薄型大屏显示。实验数据表明：用薄膜工艺淀积的非晶金刚石（AD）冷阴极在低于20X10－’V／m电场下发射的电子相当于平板金属表面在1000X10－’V／m电场下发射的电子。新型金刚石场发射显示（DFED）结构设计不需要微尖和椰极，它由阴极玻璃板上的金刚石阴极带和阳极板上的涂有荧光物质的ITO带组成。其特点是象素尺寸很小以至用光刻工艺来制造印刷电路板。DFED二极管结构的一个主要缺点是开关电压必须较高，相当于三极管结构的驱动电压达上80V，…     

基于氧化锡和碳复合薄膜的表面传导场发射显示阵列的制作

提出了用氧化锡作为起伏层制作双薄膜型场发射显示器件,成功得到均匀稳定的发射,提供了一种以简单热蒸发工艺制造成本低廉的场发射平板显示器件的方法。在试验了薄膜的发射特性的基础上,成功制作了一个小型SED平板显示阴极阵列。介绍了阵列的结构和制作方法。为制作小型SED显示器件积累了经验。     

场发射微型三极管研究

我们已成功地制造并测试了模拟集成场发射微型三极管结构。这种微型三极管采用了Spindt型钼(Mo)场发射阴极和三种不同结构的阳极。阳极到栅极和发射极锥尖的距离d分别是>5mm、≈1.25mm和≈2～20μm。本文讨论了器件工作状态对紧靠阳极的钼场发射锥尖工作特性造成的影响。测得的跨导值为0.5mS(5μS/锥尖或12S/cm~2)、截止频率是0.8MHz。照此结果推算,有望得到250mS/mm的跨导和100GHz的截止频率。     

用于场发射阴极的磁控溅射金刚石薄膜的研究

用激光拉曼谱和原子力显微镜等现状分析手段研究了磁控溅射石墨靶制备的薄膜的结构和特性。结果表明：薄膜由金刚石相和石墨相组成，它们的相对含量取决于制备工艺参数，特别是沉积时的基体温度的影响尤为明显。薄膜表面呈现为密度很高的微尖锥，这为制造大面积场发射平板显示器的阴极提供了广阔的前景。     

限流电阻层改善碳纳米管场发射显示器发光均匀度的研究

针对碳纳米管(CNT)场发射阴极薄膜中,CNT个体差异及其与衬底的不良接触对发光均匀性的影响,引入反馈限流电阻层以改善阴极薄膜的场发射发光均匀性.采用丝网印刷工艺在衬底上制备氧化锌作为电阻限流层,在其上制备CNT阴极薄膜.对CNT薄膜阴极的发射电流稳定性和均匀性进行了测试,给出了电阻限流层对场发射特性曲线的影响效果.SEM分析表明,氧化锌电阻层有利于消除CNT阴极的尖端屏蔽效应,并且使得CNT与衬底具有更加紧密的接触.场发射特性和场发射发光照片表明,虽然随着限流层厚度增加,阈值电压有所增加,发射电流有所减小,然而限流层的存在有效地改善了发射电流的稳定性,使得发射电流和场发射发光点分布更加均匀.     

应用于LCD的平栅型碳纳米管场致发射显示器背光源的研制

采用磁控溅射、光刻和湿法刻蚀技术制备平栅型场发射阴极阵列,利用电泳将碳纳米管(CNT)发射源沉积在阴极表面,将阴极板和阳极板封接后制成51cm单色平栅型CNT场致发射显示器(CNT-FED),作为背光源模板应用于49 cm液晶显示器(LCD)器件中.场发射测试表明,器件在阳极电压3 500V、栅极电压290 V时,阳极...     

碳纳米管场发射显示器中栅极技术的研究

碳纳米管场发射显示器件的研究已在各个国家开展了许多年,但仍然有很多的问题亟待解决,如碳纳米管作为阴极发射材料的发射均匀性、开启电场、栅极结构的制作、荧光屏制作、真空封装等困难。本文研究了碳纳米管场发射器件的几种结构、特性及其制作工艺,重点阐述了前栅极结构碳纳米管场发射显示器件中在栅极制作和阴极材料装配的瓶颈,并提出了一种栅极制作和阴极保护的方法,并运用此方法在实验室制作了三极结构器件进行验证,有效地解决了制作前栅极结构的困难,为制作大面积碳纳米管场发射显示屏提供了可行性方案。     

Fabrication and characterization of lateral field-emitter triodes

The author fabricated a field-emitter triode with tungsten electrodes arranged laterally on a quartz glass substrate by using the photolithography and dry etching techniques. The device consists of an array of 170 field-emitter tips with a 10-μm pitch, a columnar gate, and an anode. The emission characteristics followed the Fowler-Nordheim tunneling theory. The mutual conductance was about 0.02 μS at an anode voltage of 300 V. The authors improved the fabrication process to obtain an emitter with an operating voltage of about 100 V     

Characteristics of the dielectric diode and triode at very high frequencies

The dielectric triode is represented as a one-dimensional parallel-plane model, where the gate electrode consists of a thin continuous equipotential sheet of charge (as in the triode proposed by G.T. W ). Such a triode is the solid-state analogue of the vacuum pentode with high input and output impedance and operating under conditions of space-charge-limited current.

The incremental admittance and transadmittance of the dielectric triode are calculated as functions of transit angle, current density, geometrical dimensions and properties of the material used.

The triode in the small-signal mode of operation is represented as a linear active two-port circuit element. The four basic Y parameters of this element are calculated.

It is shown, that the dielectric triode can operate as a conventional wide-band amplifier up to frequencies of many thousands of megacycles. It is shown also, that electronic processes inside the triode do not set the limit for device operation at the frequencies corresponding to the transit angles much larger than π, and the triode can operate at these frequencies as a tuned amplifier, with the effect of “cold” interelectrode capacitances eliminated.

It is concluded, that the dielectric triode should considerably extend the u.h.f. limit of operation of transistors and conventional vacuum tubes.     

三极管非线性放大失真特性研究

本系统依据三极管的工作特性,借助了可调电阻和模拟开关的结合,设计了一种三极管非线性放大失真研究装置。利用了STM32单片机的编程与数据处理能力,完成了对电路的控制和数据分析。研究了三极管放大电路多种失真的现象,分析每种失真的原因和正常放大的条件,实现了控制、测量、分析的一体化,并将失真波形与其THD值直观地展示。该装置简便了三极管放大特性的研究,提供了一个高效的集成自动化平台。     

Planar Triode for Vacuum Microelectronics

Russian Microelectronics - The article studies a triode for vacuum microelectronics with horizontal geometry (planar triode). A simple theoretical model of the device is proposed and the minimum...     

An Improved Planar Triode With ZnO Nanopin Field Emitters

In this letter, an improved planar triode with ZnO nanopin field emitters has been proposed. Comparison with a conventional planar triode, a layer of ZnO nanostructures is deposited between the cathode and gate electrode. These ZnO nanostructures are used as field emitters. Because both electrodes and ZnO layer can be deposited with screen-printing method, the fabrication process of an improved planar triode is quite simple. As experimental results shown, the turn-on voltage and the threshold voltage are low. The swing voltage is about 120 V when the anode current of a single pixel is 200 nA. A good focus performance is also obtained with a new electrode-pattern in the planar triode.     

A design of triode electron gun

A theoretical study has been made of the focusing of high-current electron beams by means of the aperture effect. The aperture effect is obtained by a triode electron optical system. An equation for describing the beam profile in the system has been described. Both the condition for obtaining the minimum radius of the beam and the condition for optimum focus have also been worked out. Two numerical examples are treated to illustrate the triode focusing of electron beams with two different total current magnitudes of 50 and 250 µa. It is found that by using this triode system the final energy of the electrons and the total current of the electron beam may be adjusted separately.     

Experimental study of the radiation field of a virtual-cathode triode

The far-field radiation of a virtual-cathode triode is studied experimentally. The dependences of the power flux density and frequency on the direction of radiation are obtained for various instants of the generation pulse. The radiation of the virtual-cathode triode is characterized by an intricate directional pattern and variable frequency spectrum.