ZnPc作为有机太阳电池阴极修饰层的研究

采用ZnPc作为ZnPc/C60有机太阳电池阴极修饰层,分析了其对器件光电性能和稳定性的影响.研究了不同厚度ZnPc修饰层对器件性能的影响,结果表明用3 nm ZnPe修饰的器件性能最好.通过传输矩阵的方法画出了结构为ITO/ZnPc(30 nm)/C60(40 nm)/ZnPc(3 nm)/Al(100 nm)电池内部两束敏感光线(630 nm和450 nm光波)的光强分布图,加入3 nm ZnPc对光强分布影响不大.实验还对比分析了未添加、添加LiF和ZnPc修饰层器件的稳定性,用ZnPc修饰的器件更好地改善了稳定性,并对相关机理进行了讨论.     

低光强下CdTe太阳电池的性能研究

研究了低光强下CdTe太阳电池的性能变化.基于经典的CdS/CdTe结构,建立了短路电流、开路电压、填充因子和转换效率等参数与光强之间的关系模型,模拟了0.02～1kW/m2光强范围内的主要参数变化规律.结果表明,随着光强的减小,CdTe电池短路电流呈线性减小,开路电压呈指数下降,填充因子先增大,在0.3 kW/m2附近达到最大值,之后迅速降低;转换效率逐渐恶化.研究结果为CdTe薄膜太阳电池在室外低光强下和室内应用提供了理论基础.     

酞菁染料ZnPc和Q-PbS复合敏化纳米晶ZnO薄膜电极的研究

利用溶胶-凝胶旋涂镀膜法结合热处理工艺在FTO玻璃上制备了ZnO薄膜,并通过X射线衍射(XRD)、扫描电子镜(SEM)对其晶相及表面形貌进行了表征;以酞菁染料ZnPc和窄禁带半导体PbS量子点(Q-PbS)为敏化剂,分别制备了FTO/ZnO/ZnPc电极、FTO/ZnO/Q-PbS电极和FTOZnO/Q-PbS/ZnPc电极,结果表明,ZnPc和Q-PbS对ZnO纳米颗粒膜产生了良好的敏化作用,且两者的复合敏化效果最好;制备了FTO/ZnO/Q-PbS/ZnPc为光阳极的染料敏化太阳能电池(DSSC),在模拟太阳光下,电池的开路电压为304mV,短路电流为1.42mA,光电转换效率为0.696%,填充因子为0.348。     

透镜与电池间距对聚光光伏系统特性影响的实验研究

实验研究了聚光太阳电池上光照强度、短路电流、开路电压、电池温度和光电转换效率随菲涅耳透镜与电池的距离变化关系。结果表明,聚光条件下,太阳电池性能的提高主要源于短路电流的变化,而不是开路电压;聚光后,太阳电池与透镜距离为焦长时,输出功率可以达到最大值;太阳电池的最大单位光强转换效率需要把太阳电池放到透镜焦点前。本文研究结果对于聚光光伏系统的研制具有指导意义。     

激光辐照单晶硅光伏电池输出特性的实验研究（英文）

光伏电池性能对激光无线能量传输系统设计有重要影响。采用940 nm激光辐照单晶硅光伏电池,研究了光伏电池输出特性随激光强度和电池温度的变化规律。研究结果表明,短路电流随激光功率增加呈现线性增加后饱和的趋势。开路电压和效率与激光功率的关系则呈单峰特性。实验测得光伏电池在293 K时最大效率为29.49%。在283 K~308 K范围内,激光功率较低时,短路电流受温度影响较小,基本保持不变。激光功率较大时,短路电流随温度升高而线性下降。开路电压和效率则随温度升高而线性下降,但下降速率随激光强度的变化而变化。同时仿真了光伏电池效率与串联电阻的关系。结果表明,在强激光辐照下,减小串联电阻,降低复合电流的大小是提高单晶硅光伏电池效率的两个重要方面。     

掺锰硅材料的电流振荡特性

用高温扩散方法制备出补偿Si∶(B,Mn)材料,并研究了这种材料的电流振荡参数与光照和电场之间的关系.结果表明:在一定光照和电场范围内(276～305V/cm),电阻率为104Ω·cm的材料在液氮温度下显示出电流振荡特性;在一定的电场下,电流振荡波形是固定的,不随时间变化;振荡频率随光照强度的增大而线性增大;调制系数随着光强的增强而减弱;振荡的最大值随着光照强度增大而减小,最小值随着光强增大而缓慢增大.     

掺锰硅材料的电流振荡特性

用高温扩散方法制备出补偿Si∶(B,Mn)材料,并研究了这种材料的电流振荡参数与光照和电场之间的关系.结果表明:在一定光照和电场范围内(276～305V/cm),电阻率为104Ω·cm的材料在液氮温度下显示出电流振荡特性;在一定的电场下,电流振荡波形是固定的,不随时间变化;振荡频率随光照强度的增大而线性增大;调制系数随着光强的增强而减弱;振荡的最大值随着光照强度增大而减小,最小值随着光强增大而缓慢增大.     

激光辐照单结砷化镓光伏电池的输出特性

选取单结砷化镓光伏电池和工作波长为808 nm的半导体激光器,开展激光无线能量传输的研究,实验测试了光伏电池性能参数与激光功率和电池温度的关系。结果表明,光伏电池效率随激光功率的增大呈单峰曲线,激光平均功率密度为67.5 mW/cm2时效率最大为49.7%。温度升高,开路电压线性下降,从而导致效率线性降低。激光功率越大,开路电压和效率的温度系数越小。     

高能电子辐照对三结GaAs激光电池特性的影响

研究了能量为1 MeV的电子辐照对三结GaAs激光电池(LPC)性能的影响。不同剂量电子辐照后三结GaAs LPC光照下的I-V特性测试结果表明，三结GaAs LPC短路电流、开路电压和最大输出功率的衰减随电子辐照剂量的提高而增大。通过测量不同波长激光照射下三结GaAs LPC的宽电压范围I-V曲线，确定了各子电池对应的光生电流，结果显示各子电池光生电流衰减随辐照剂量增加而不同程度地增大，越靠近衬底的子电池电流衰退越严重。利用wxAMPS软件模拟了各子电池光生电流随缺陷密度的变化关系，结合实验和模拟结果得到了各子电池辐照后的缺陷密度及缺陷引入率，结果表明各子电池受电子辐照后的缺陷引入率大致相同，约为6.7。可通过优化各结子电池厚度达到提高三结GaAs LPC抗辐照性能的目的。     

三结GaAs太阳电池的I-V特性研究

作为对聚光特性的补偿,对电池进行暗特性测试,从曲线中提取了几个重要的电学特性参数。搭建了一套CPV测试系统,分析了GaAs电池500倍聚光条件下的输出特性,测得模块的峰值效率为22.24%,峰值功率为23.56 W,短路电流温度系数为1.9 mA/℃,开路电压温度系数为-5.9 mV/℃。户外特性测试为光伏发电系统提供可靠性,更多的实验表明,效率和填充因子在一天内的变化趋势相反,最值均在光通量下降为最大值时的90%左右出现。实验表明Isc(短路电流)和Voc(开路电压)随光照强度的变化与理论分析一致。     

利用Rubrene/C70异质结提高有机太阳能电池的性能

用C70、C60作为受体,Rubrene、CuPc作为给体,制备了4种异质结有机太阳能电池（（）SCs）。实验结果表明,c70代替Qo作为受体的OSCs短路电流Jsc显著增加;Rubrene代替CuPc作为给体的OSCs的开路电压Voc大幅度提高。制备的Rubrene／G70异质结OSCs的Voc、Jsc填充因子FF和...     

～1.2 V open-circuit voltage from organic solar cells

Organic solar cells (OSCs) have achieved rapid advance due to the continuous development of high-performance key materials.Recently,the power conversion efficiencies (PCEs)of OSCs under 1 Sun condition (AM 1.5 G,100 mW/cm2) are striving toward 19％[1-5].The PCE improvement benefits from the largely enhanced short-circuit current density (Jsc) and fill factor (FF).However,these cells show relatively low open-circuit voltage (Voc) around 0.8-0.9 V.The rise of Internet of Things (loT) industry has promoted the indoor application of solar cells.OSCs can afford higher PCEs under various indoor light as compared to 1 Sun condition[6,7],but they present lower Voc[8].Fabricating tandem devices is an effective strategy to boost the performance of OSCs.Sub-cells with syn-chronously high Voc,Jsc and FF are highly desired in tandem cells,while these sub-cells are still limited[9].Thus,improving Voc without sacrificing Jsc and FF is an urgent mission in OSCs.     

退火方式及PCBM阴极修饰层对聚合物太阳电池的影响

研究了不同退火方式及PCBM阴极修饰层对聚合物太阳电池性能的影响。与前退火相比,后退火的器件性能显著提高,电池的开路电压Voc由0.36V增加到0.60V,能量转换效率η从0.85%提高到1.93%,短路电流密度Jsc和填充因子FF也有不同程度的改善;在电池的活性层与Al电极间沉积一定厚度的PCBM阴极修饰层也能改善电池的性能,当PCBM厚度为3nm时,聚合物太阳电池在100mW.cm-2强度光照下,Voc为0.59V,Jsc为6.43mA.cm-2,FF为55.1%,η为2.09%。     

Effects of carrier mobility, energy gap, and excitation size on the performance of single layer organic solar cells

A model of universal single layer organic solar cells in metal-insulator-metal （MIM） representation involving field-depen- dent carrier mobility is set up. The current-voltage characteristics as well as the distribution of electron density, hole density and recombination rate on a set of parameters are simulated. Subsequently, the dependences of the short-circuit current density （Jsc） and open-circuit voltage （Voc） on the electron and hole zero-field mobility, excitation generation rate, energy gap, as well as electron-hole pair distance in an excitation are investigated. It is demonstrated that the enhancement of either the electron mobility or the hole mobility can contribute to the increase of Jsc in the devices. The increase of the hole mobility can lead to the improvement of both Jsc and Voc, and the simultaneous increase of the electron mobility and hole mobility will greatly elevate Jsc but maintain a steady Voc. Additionally, all the increases of the excitation generation rate, energy gap and electron-hole pair distance are beneficial to both the remarkable increases of Jsc and Voc of the devices.     

正置倒置异质结有机小分子太阳能电池

以MoO3为阳极修饰层,以Rubrene/C60为活性层,制备了正置和倒置异质结有机小分子太阳能电池。实验结果表明倒置器件的开路电压Voc、短路电流密度Jsc、填充因子FF和功率转换效率η比正置结构的器件分别提高了34%、20%、25%和102%。当插入BCP阴极缓冲层后,阻挡了热的Al原子对C60层的破坏,对倒置器件的性能没有明显的影响,但却显著改善了正置器件的性能,并分析了MoO3和BCP对倒置和正置器件的作用。     

Film thickness effect on the performance of small molecular solar cell

An efficient organic photovoltaic （OPV） cell with an indium-tin-oxide/CuPc/C60/Ag structure has been investigated by changing the film thickness of organic layers. A high olin-circuit voltage （Yoc） of 0.5 V, a short-circuit current density （Jsc） of 5.81 mA/cm^2, and a high power conversion efficiency （ηp） of 1.2% were achieved at an optimum film thickness. The results demonstrate that material thickness is an important factor to cell optimization, especially for maximizing the absorption rate as will as reducing the cell resistance. Experimental results also indicate that the power conversion efficiency increases from 1.2% to 1.54% as a BCP exciton blocking layer of 10 nm is introduced.     

Improvement of photovoltaic performance of inverted hybrid solar cells by adding single-wall carbon nanotubes in poly(3-hexylthiophene)

Solution prepared hybrid solar cells show promising low cost technology for electricity generation from sun light, although their power conversion efficiency has to be improved. One of the approaches is to increase the absorbance or charge carrier mobility of organic semiconductors. In this work, pristine single walled carbon nanotubes (SWCNT) were added into poly(3-hexylthiophene) (P3HT) solution to form P3HT:SWCNT composite films with different weight percent (wt%) of SWCNT. It is observed that optical absorbance spectra as well as the morphology of the composite films were modified by the addition of SWCNTs. This phenomenon could be explained by the π-π interaction between the conjugated polymer and carbon nanotubes. Most importantly, the electrical conductivities of the composite films increased with the SWCNT wt%. When these films were used as hole conductor layers in inverted planar hybrid solar cell, with CdS thin films as electron acceptor layers, the fill factor (FF) and open-circuit voltage (Voc) of the corresponding cells were decreased with the increase of the wt% of SWCNT. However, the short-circuit current density (Jsc) and the power conversion efficiency (PCE) showed a maximum value at about 0.4 wt% of SWCNT in P3HT. The transient photovoltage measurements (TPV) revealed that the presence of SWNCT promoted the charge recombination process at P3HT/CdS interface, and as a result, reduced the Voc. The photovoltaic performance of the hybrid solar cells could be optimized by choosing an adequate weight percentage of SWCNT in P3HT to balance the charge carrier transport and charge recombination processes at the donor-acceptor interface.     

Recent advances and prospects of asymmetric non-fullerene small molecule acceptors for polymer solar cells

Recently,polymer solar cells developed very fast due to the application of non-fullerence acceptors.Substituting asym-metric small molecules for symmetric small molecule acceptors in the photoactive layer is a strategy to improve the perform-ance of polymer solar cells.The asymmetric design of the molecule is very beneficial for exciton dissociation and charge trans-port and will also fine-tune the molecular energy level to adjust the open-circuit voltage (Voc) further.The influence on the ab-sorption range and absorption intensity will cause the short-circuit current density (Jsc) to change,resulting in higher device per-formance.The effect on molecular aggregation and molecular stacking of asymmetric structures can directly change the micro-scopic morphology,phase separation size,and the active layer's crystallinity.Very recently,thanks to the ingenious design of act-ive layer materials and the optimization of devices,asymmetric non-fullerene polymer solar cells (A-NF-PSCs) have achieved re-markable development.In this review,we have summarized the latest developments in asymmetric small molecule acceptors(A-NF-SMAs) with the acceptor-donor-acceptor (A-D-A) and/or acceptor-donor-acceptor-donor-acceptor (A-D-A-D-A) struc-tures,and the advantages of asymmetric small molecules are explored from the aspects of charge transport,molecular energy level and active layer accumulation morphology.     

CdTe-HgCdTe叠层太阳电池CdS窗口层透射光谱性能研究

CdS窗口层光谱透射率的提高对CdTe-HgCdTe叠层太阳电池有效利用入射太阳光并增大电池的短路电流密度有重要的影响。通过研究化学水浴法、近空间升华法和磁控溅射法制备的CdS薄膜在CdCl2退火前后的光谱平均透过率和短路电流密度损失表明:在光谱区520~820 nm,化学水浴法制备的CdS薄膜在退火前后具有最高的光谱平均透过率,对应的CdTe顶电池有最小的短路电流密度损失;在光谱区820~1150和520~1150 nm,磁控溅射法制备的CdS薄膜在退火前后均具有最高的光谱平均透过率,对应的HgCdTe底电池和CdTe-HgCdTe叠层太阳电池有最小的短路电流密度损失。在光谱区520~820、820~1150和520~1150 nm,CdCl2退火可以显著增大CdS薄膜的光谱平均透过率,降低对应CdTe顶电池、HgCdTe底电池和CdTe-HgCdTe叠层电池的短路电流密度损失。