垂直电偶极子在涂敷介质导电平面上激起的场Ⅱ

对垂直电偶极子（VED）在涂敷介质层的非理想导电基底上激起的电磁场进行了讨论,获得了便于计算的解析表达式,并进行了数值计算。     

位于介质覆盖的导电基底中水平电偶极子的场

讨论了位于有介质层覆盖的非理想导电基底中的水平电偶极子激励起的电磁场,获得了方便于计算的解析表达式,并进行了数值计算和讨论。     

垂直电偶极子在负折射媒质涂覆基底上产生的场

研究了垂直电偶极子在负折射媒质涂覆的理想导电基底上产生的电磁场,获得了场分量的解析表达式.分析和计算结果表明,电偶极子激发的电磁场可分解为直达波、反射波、侧面波和表面波.其中表面波在负折射媒质表面传播的波数介于空气层和介质层中传播波数之间,其幅度在距离向按波的几何扩散规律衰减,在垂直于介质层方向则以正弦或余弦规律变化.由于存在三种传播波数的波,它们共同作用形成的总场将发生复杂的干涉现象.     

垂直电偶极子在有介质导电平面上激起的场

分析研究了垂直电偶极子在介质涂敷的理想导电平面上激起的电磁场 ,获得了场分量的解析表达式。分析表明 ,垂直电偶极子在介质涂敷的导电平面上激起的电磁场可分解为直达波、反射波、侧面波和吸附表面波。其中吸附表面波在沿介质表面传播的波数介于在空气层和介质层中传播波数 k0 与 k1之间 ,其幅度按ρ-1/ 2 规律衰减 ,在垂直于介质层方向则以指数规律衰减。文中导出的直达波、反射波、侧面波项则与文献 [1 ]中的结果完全一致。当介质层较厚时 ,由于表面波与侧面波相加的结果 ,总场将发生明显的干涉现象。     

水平电偶极子在涂敷介质层的导电基底上激起的场

对水平电偶极子在涂敷介质层的理想导电基底上激起的电磁场进行了讨论。获得了包含磁型波分量和电型波分量的场的解析表达式,并对磁型表面波的传播特性进行了分析和数值计算,分析表明,当满足一定捍,磁型表面波才能被激励,文献所给出的结论是此文的一种特殊情况,本文更具有一般性。     

地下水平电偶极子在均匀球形地面产生的侧面波

讨论了位于地下的水平电偶极子在均匀球形地面上产生的侧面波（Lateral wave)。从位于球形地面场的垂直电偶极子和磁偶极子在地面上建立的电磁场出发，利用互易定理，获得了地下水平电偶极子在地面上和地面下产生的既方便于数值计算又具有足够精度的电磁场的解析表达式。计算结果表明，由于地球曲率的影响，沿球形地面传播的侧面波比沿平行地面传播的侧面波衰减的快，当收发地点的距离超过40km后，地球曲率对传播的影响就不能被忽视，对地下通信以及潜艇通信有一定指导意义。     

有限导电平面上方电偶极子电磁场的解析公式

利用广义阻抗边界条件来模拟有限导电平面对电磁场的影响。在此边界条件下,推导出有限导电平面上垂直和水平电偶极子电磁场的解析表达式;赫芝位函数中的索末菲型积分被表达成零阶汉克尔函数与绝对收敛的球汉克尔函数级数之和的形式。利用这些解析公式可方便、准确地计算和分析任意取向电偶极子电磁场的分布。     

球形天线罩对垂直电偶极子辐射特性的影响

给出由负折射媒质构成的球形天线罩包围的垂直电偶极子在空间辐射的电磁场解析表达式.讨论了偶极子的位置与球形天线罩材料的电磁特性对辐射场的影响.理论分析和计算结果表明:当偶极子位于球心时,辐射的电磁场和文献[8]的结果吻合很好;随着场点与球心距离的增加,偶极子的放置位置对辐射场影响变小;相对于普通介质和自由空间,负折射媒质构成的球形天线罩增强了垂直偶极子的空间辐射特性.     

导体表面有耗介质层中垂直电偶极子激励的场

本文导了有耗介质层内垂直电偶极子激励场的表达式，通过积分路径变换的方法，对表达式中的索档菲积分进行数值。计算了激励场在介质层内外的分布曲线，并分析了介质损耗及厚度对场分布的影响。     

总目次

第 1期FF/FB媒质等效电磁参数的数值计算郭　琳　张　明　洪　伟等　 1……………………………………………………………垂直电偶极子在涂敷介质导电平面上激起的场 张红旗　潘威炎　 5……………………………………………………………地平面上方垂直磁流元电磁场的精确解析表达式江滨浩　刘永坦　 12…………………………………………………………分数阶 Fourier变换和近区场的计算董晓龙　吴　季　姜景山　 18………………………………………………………………FDTD中的一种新截断边界 - STWBC 谭怀英　梁甸农　刘克成　 2 2…………     

复合介质层SOI高压器件电场分布解析模型

提出复合介质埋层SOI(compound dielectric buried layer SOI,CDL SOI)高压器件新结构,建立其电场和电势分布的二维解析模型,给出CDL SOI和均匀介质埋层SOI器件的RESURF条件统一判据.CDL SOI结构利用漏端低k(介电常数)介质增强埋层纵向电场,具有不同k值的复合介质埋层调制漂移区电场,二者均使耐压提高.借助解析模型和二维数值仿真对其电场和电势进行分析,二者吻合较好.结果表明,对低k值为2的CDL SOILDMOS,其埋层电场和器件耐压分别比常规SOI结构提高了82%和58%.     

Scattering from a conductive rectangular plate covered by a thickdielectric layer and excited from a dipole source or a plane wave

The scattering of electromagnetic radiation from a conductive rectangular plate of infinitesimal thickness covered by a dielectric parallelepiped of arbitrary size is analyzed. An integral equation formulation is employed in terms of the electric field inside the dielectric layer and the surface current density on the conductive plate, and is solved approximately by using entire domain Galerkin technique. The electric field inside the dielectric layer is described in terms of a superposition of exponential waves while, in describing the surface current density on the conductive plate, two types of entire domain basis functions are utilized: either Fourier-exponential series or Chebyshev series type finite-term expansions are employed alternatively. Numerical results are computed and presented for several scatterer sizes and excitation types     

Design of microstrip antennas covered with a dielectric layer

The design of a microstrip antenna covered with a dielectric layer is presented. Due to loading, the resonant frequency of the antenna changes. The absolute value of the change increases with the operating frequency, the relative permittivity (except plasma), and the thickness of the dielectric layer. This change may cause degradation in performance due to the inherent narrow bandwidth of microstrip antennas if the effect of loading is not considered in the design. The curves presented here may be used to design microstrip antennas that may be subjected to icing or a plasma environment or coated with protective layers. Numerical and experimental results for the fractional change in the resonant frequency are round to be in good agreement.     

Asymptotic Green's function of a surface magnetic current elementon a perfect electric conductor plane covered by a lossy dielectricsubstrate

Published analyses of radiation modeling for slot structures on dielectric substrate are empirical or numerical. This paper proposes exact analytical asymptotic expressions of the far-field Green's functions of a surface magnetic current element on a perfect electric conductor plane covered by a lossy dielectric substrate of finite thickness. From these expressions, the radiation pattern of both the space wave and surface wave far away from an arbitrary shaped-slot antenna structure can be calculated, provided the source distribution across the slot is known. The potentials used in the analysis are defined and their boundary conditions are expressed. The Helmholtz equation is solved in the Laplace domain and the solutions are transformed into the space domain using the inverse Hankel transform and steepest descent method. The influences of the substrate thickness and dielectric constant are analyzed using the calculated expressions. The model is validated by comparison with surface wave and space wave measurements and with numerical results obtained from a commercial electromagnetic simulator     

Resonance suppression of a spherical electromagnetic shieldingenclosure by using conductive dielectrics

The resonance suppression for the electromagnetic shielding enclosure is theoretically investigated. A simple model of a double-layered spherical shell with a plane-wave illumination is assumed. When a spherical shell made of conductive dielectrics is covered with a thin metal layer, the conductivity of the dielectrics has an optimum value which minimizes the Q-factor at the fundamental resonant frequency. The optimum conductivity is shown to be a function of the resonant frequency and the thickness of the dielectric layer. The improvement of the shielding effectiveness by introducing the optimum conductivity is shown     

Frequency-selective properties of modified dielectric gratings

Several modifications of dielectric gratings are studied by the mode matching technique, which was shown to be quite adequate for the analysis of such structures in our previous works. These modifications include a socalled metal-dielectric grating, i.e., a dielectric grating, in which the inner faces of the rods are covered with a thin conducting layer, and a matched dielectric grating. The former grating is paid especial attention because of its unique frequency-selective properties.     

介质加盖高增益微带天线的优化

本文提出了利用点源增益优化方法设计介质加盖的高增益微带天线的方法,所确定的各介质层的电厚度能保证天线取得最高的增益。同时优化计算量也成倍减少。所设计的一个两层介质加盖微带天线的最高增益达到16.8dB。分析结果还表明,在一定条件下,增益和效率是可以兼顾的,用加盖的方法提高天线增益的同时仍可使天线具有较高的辐射效率。     

Gate oxide damage reduction using a protective dielectric layer

Gate oxide damage from charge entering through the top surface of the gate electrode during plasma ashing, ion implantation, and LDD spacer oxide etching was measured using antenna structures. Significant charge damage to the 9.0 nm-thick gate oxide was detected for each of these processes. The damage was reduced by using a protective dielectric layer, in this case a thermally deposited TEOS oxide over the polycide gate electrode before gate definition. The dielectric appears to block charge penetration into the antenna. Damage can be reduced further by increasing the thickness of the dielectric layer; for a sufficiently thick layer (about 150 nm), charge entering through the top surface of the antenna was effectively eliminated