小波提升变换OFDM系统抗脉冲性能分析

利用小波提升理论构造一种新的多载波(OFDM)系统,在原傅里叶变换的OFDM(FFT-OFDM)系统的优越性的基础上,扩大系统容量及有效地利用系统的带宽,并使整个系统简单化.进一步对小波提升变换OFDM及傅里叶变换OFDM的抗脉冲干扰性能进行了深入研究,仿真与实验结果表明:基于小波提升的OFDM系统抗脉冲干扰特性远远优于传统OFDM系统.     

基于离散正弦变换的单载波频分多址系统及其性能分析

为分析离散傅里叶变换(DFT)与离散正弦变换(DST)对单载波频分多址(SC-FDMA)系统某些性能的影响,提出了一种基于离散正弦变换的单载波频分多址系统。给出了基于DST的SC-FD-MA系统的结构框图,接着重点推导和分析了DST IFDMA和DSTLFDMA信号的时域表达式,最后讨论了系统的峰值平均功率比(PAPR)和不同脉冲成形滤波器的冲激响应。仿真结果表明,基于DST的SC-FDMA系统比传统的基于DFT的SC-FDMA系统和正交频分多址接入(OFDMA)系统有更好的比特误码率。此外,DST SC-FDMA信号的PAPR性能接近于DFT SC-FDMA且优于OFDMA。     

基于小波变换/小波包变换的多载波调制技术

小波/小波包在通信系统中的应用是近年来一个新的研究领域,而基于小波/小波包变换的多载波调制技术是其中一大研究热点。由于小波/小波包基函数具有良好的正交性与时频局域性等特点,基于小波/小波包变换的多载波调制技术,能够有效地提高通信系统性能。本文介绍了当前几种主要的基于小波/小波包变换的多载波调制方案,分析了这些方案的性能特点及发展趋势,并与其他方案进行了比较。     

一种能有效抑制窄带干扰的小波包多载波扩频系统

本文提出一种能有效抑制窄带干扰的基于小波包的多载波扩频接收系统.该系统通过小波包分析来自适应调整优化参数并进行抗干扰处理,使系统性能在高功率窄带干扰下得到改善.处理过程可与传统的基于小波包的多载波扩频系统解调解扩方式很好的相匹配,系统复杂度很低.研究与仿真结果表明,这种方案简单实用,具有良好的性能.在相同的处理条件下,性能要大大优于基于离散傅立叶变换(DFT)的多载波扩频系统.     

一种基于小波包的多载波数字AM系统

本文分析了基于正交幅度调制的小波包调制在不同信道模型下的性能,并对这种小波包多载波调制系统进行了性能仿真.通过与基于离散傅里叶变换的正交频分复用调制系统进行比较,探讨了小波包调制应用于数字调幅传输系统的可能性.     

基于离散小波变换的OFDM基带传输系统性能分析

基于离散小波的基本理论,提出了一种新的多载波调制技术——离散小波变换正交频分复用（DWT-OFDM）.针对下一代移动通信中频率选择性及符号干扰的问题,比较全面地研究了基于离散小波变换的调制的基带特性,包括抗载频偏移和抗脉冲干扰等各方面性能,以及该系统在AWGN和典型无线传输环境下的表现等.理论及实践证明：在对抗窄带干扰方面,DWT-OFDM系统性能表现突出,远远优于传统OFDM系统.     

一种基于小波包变换的MC-CDMA系统

本文提出了一种基于小波包变换的多载波子信道并行传输的ＣＤＭＡ系统模型和利用不同小波包子空间进行分集接收的概念,结合多径信道,进行了理论分析,利用ＧＳＭ－ＴＵ６信道模型对所提出的系统进行了性能仿真,并与基于ＤＦＴ变换的系统进行了比较。     

异步多址正交频分复用信号解码算法研究

提出了异步情况下基于独立分量分析的正交频分复用多址(Orthogonal Frequency Division Multiple Access, OFDMA)接入信号解码算法.该算法可以在传输延迟及载波频偏未知情况下, 对多用户OFDMA信号进行盲分离和解码, 不需要去除循环前缀, 增加了接收信号能量, 提高了解码性能.理论分析和仿真表明:在平稳信道环境下, 相比于传统的基于快速傅里叶变换的OFDMA信号解码算法, 该算法具有更好的性能.     

基于LWT的可见光OFDM-IM系统研究

针对索引调制正交频分复用(OFDM-IM)技术峰均比过高,对相位噪声和载波频偏敏感,系统复杂度高等问题,提出基于小波提升变换(LWT)的可见光OFDM-IM系统。首先选择正交小波基作为子载波,通过对信号的分裂、预测和更新,将信号分为高频信号和低频信号,再结合可见光信道构成LWT-OFDM-IM系统,最后通过理论分析和蒙特卡罗方法对系统的可靠性、峰均比特性和最佳小波分解层数进行了仿真验证,结果表明：当子载波N=256,子块中子载波数量L=4,激活子载波数量k=2,系统误码率为10^-4时,LWT-OFDM-IM比FFT-OFDM-IM改善约8 dB,相较于DWT-OFDM-IM提高约4 dB。当系统互补累计分布函数(CCDF)为10^-1数量级时,LWT-OFDM-IM的峰均比较FFT-OFDM-IM改善约2.3 dB。随着小波层数的递增,系统的误码性能越好,当小波层数为3层时,大约在10 dB附近,误码率可到10^-5量级。     

基于复小波包的MC-CDMA系统及上行链路性能分析

文章在分析多载波扩频码分多址的基础上，利用优化生成的复小波包及变换，研究了一种基于复小波包的多载波CDMA系统在多径瑞利衰落环境下的上行链路性能。仿真结果表明该系统要优于通常的MC-CDMA系统和基于实小波包变换的MC-CDMA系统，具有良好的抗衰落能力。并采用多天线分集接收技术进一步完善系统性能，从而增强了系统抗多径干扰和多址干扰的能力，且得到了更低的误码率。     

Interfacial reaction and shear strength of SnAgCu-xNi/Ni solder joints during aging at 150 °C

The interfacial microstructure and shear strength of Sn3.8Ag0.7Cu-xNi (SAC-xNi, x = 0.5, 1, and 2) composite solders on Ni/Au finished Cu pads were investigated in detail after aging at 150 °C for up to 1000 h. The interfacial characteristics of composite solder joints were affected significantly by the weight percentages of added Ni micro-particles and aging time. After aging for 200 h, the solder joints of SAC, SAC-0.5Ni and -1Ni presented duplex intermetallic compound (IMC) layers regardless of the initial interfacial structure on as-reflowed joints, whose upper and lower IMC layers were comprised of (CuNi)₆Sn₅ and (NiCu)₃Sn₄, respectively. Only a single (NiCu)₃Sn₄ IMC layer was ever observed at the SAC-2Ni/Ni interface on whole aging process. Based on the compositional analysis, the amount of Ni within the IMC regions increased as the proportion of Ni addition increased. The IMC (NiCu)₃Sn₄ layer thickness on the interface of SAC and SAC-0.5Ni grew more slowly when compared to that of SAC-1Ni and -2Ni, while for the (CuNi)₆Sn₅ layer the reverse is true. Except the IMCs sizes are increased with increased aging time, the interfacial IMCs tended to transfer their morphologies to polyhedra. In all composite joints testing, the shear strengths were approximately equal to non-composite joints. The fracturing observed during shear testing of composite joints occurred in the bulk solder, indicating that the SAC-xNi/Ni solder joints had a desirable joint reliability.     

有机发光二极管中ADN掺杂ErQ的1.54μm电致发光

自行设计了基于8-羟基喹啉铒(ErQ)为发射层(EMLs)和二硝酰胺铵(ADN)为蓝光主体材料的近红外有机发光二级管.器件的基本结构为(p-Si/NPB/EML/Bphen/Bphen:Cs2CO3/Sm/Au),设计并比较了三套不同发射层结构(ErQ/ADN为双层结构器件,(ErQ/ADN)×3为多层结构器件,ErQ:ADN为掺杂结构器件)的器件.三组器件在一定的偏压下,均可发出1.54μm的光,对应三价铒离子4I13/2→4I15/2的跃迁.其中,ADN:ErQ(1∶1)掺杂结构的近红外电致发光强度是ADN/ErQ双层结构中的三倍.此外,不同掺杂浓度的ADN:ErQ复合膜做了以下表征:吸收谱、光致发光谱和荧光寿命谱.实验结果证实了在近红外电致发光过程中存在从ADN主体分子到ErQ发射分子的高效率的能量转移.     

BNBST无铅压电陶瓷的制备工艺研究

设计了（Bi0.55Na0.5）1-X（BaaSrb）xTiO3（BNBST[100x-100a／100b]）无铅压电陶瓷新体系。该体系压电陶瓷具有工艺特性及压电响应好，压电常数高的特点，且有实际应用前景的新型压电陶瓷材料体系。采用传统的陶瓷工艺制备了（Bi0.55Na0.5）1-X（BaaSrb）xTiO3无铅压电陶瓷，研究了制备工艺参数对其物化结构性能的影响。生料的热重-差热（TGA-DTA）分析表明，粉料合成过程中，先是SrTiO3、BaTiO3的形成，然后是（Bi0．5Na0．5）Tio，的形成，同时三者形成固溶体；密度测试表明，陶瓷的体积密度随烧结温度的升高而增大，可较易获得理论密度94％的陶瓷；X-射线能谱分析（EDAX）研究表明，陶瓷的Bi、Na的挥发随着烧结温度的升高而加剧。研究结果表明，要制备性能优良的无铅压电陶瓷，需要精确控制制备工艺。     

Emerging interconnects: a state-of-the-art review and emerging solutions

Aluminium was a primary material for interconnection in integrated circuits (ICs) since their inception. Later, copper was introduced as interconnect material which has better metallic conductivity and resistance to electromigration. As the aggressive technology scaling continues, the copper resistivity increased because of size effects, which causes increase in delay, power dissipation and electromigration. The need to reduce the resistor-capacitor??????? delay, dynamic power utilisation and the crosstalk commotion is as of now the fundamental main impetus behind the presentation of new materials. The purpose of this paper is to do a survey of interconnect material used in IC from introduction of ICs to till date. This paper studies and reviews new materials available for interconnect application which are optical interconnects, carbon nanotube (CNT), graphene nanoribbons (GNRs) and silicon nanowires which are alternatives to copper. While doing a survey of interconnect material, it is found that multiwalled CNTs, multilayer GNR and mixed CNT bundles are promising candidates and are ultimate choice that can strongly address the problems faced by copper but on integration basis copper would last for coming years.     

钠离子对poly(dT).poly(dA).poly(dT)三螺旋DNA分子呼吸模式的影响

利用分子结构的螺旋对称性,建立了一个包括钠离子的三链DNA分子poly(dT)*poly(dA)*poly(dT)的晶格动力学模型,计算了poly(dT)*poly(dA)*poly(dT)的氢键呼吸模式.结果发现钠离子的加入明显地淬灭了位于较低频率的几个最为强烈的Hoogensteen氢键呼吸模式,而对Watson-Crick氢键呼吸模式影响不明显,这说明钠离子能提高poly(dT)*poly(dA)*poly(dT)三螺旋结构的稳定性.该计算结果很好地解释了poly(dT)*poly(dA)*poly(dT)的热融化实验.     

聚对苯撑苯并双(口恶)唑发光及其器件制备

采用光谱技术,研究了聚对苯撑苯并双(口恶)唑(PBO)溶液的光敏发光特性,并用相对法估算出溶液发光效率在50%范围.结合光谱技术、半导体电学和电化学等研究手段,具体研究了以PBO为发光层的单层电致发光器件,研究结果显示,电致发光与薄膜的光致发光有具有相同的发光中心,峰值位于510 nm左右.同时发现,由于存制备过程中不同处理条件使得不同厚度薄膜残留的掺杂物质浓度不同,从而引起薄膜的导电性的不同.使得器件的阈值场强随PBO厚度的减小而逐渐增加.     

人小肠粘膜免疫酶的定位研究—光镜和电镜免疫组织化学染色法

本文对免疫酶组织化学的样品制备程序和染色方法做了详细的阐述。用直接法、间接法和ABC法,对人小肠免疫酶的定位,进行了光镜和电镜的观察,染色阳性反应显著,获得了满意的效果。并对染色技巧做了分析和探讨。     

Arsenic deposition as a precursor layer on silicon (211) and (311) surfaces

We investigate the properties of arsenic (As) covered Si(211) and Si(311) surfaces by analyzing data from x-ray photoelectron spectroscopy (XPS) and low-energy electron diffraction (LEED) images. We then create a model using total surface energy calculations. It was found that both Si(211) and Si(311) had 0.68±0.08 surface As coverage. Si(211) had 0.28±0.04 Te coverage and Si(311) had 0.24±0.04 Te coverage. The Si(211) surface replaces the terrace and trench Si atoms with As for a lower surface energy, while the Si edge atoms form dimers. The Si(311) surface replaces all terrace atoms and adsorbs an As dimer every other edge site. These configurations imply an improvement in the mean migration path from the bare silicon surface by allowing the impinging atoms for the next epitaxial layer, tellurium (Te), to bind at every other pair of edge atoms, and not the step terrace sites. This would ensure a nonpolar, B-face growth.     

Joint estimation of TOA and DOA in IR-UWB system using a successive propagator method

Impulse radio ultra-wideband (IR-UWB) ranging and positioning require accurate estimation of time-of-arrival (TOA) and direction-of-arrival (DOA). With receiver of two antennas, both of the TOA and DOA parameters can be estimated via two-dimensional (2D) propagator method (PM), in which the 2D spectral peak searching, however, renders much higher computational complexity. This paper proposes a successive PM algorithm for joint TOA and DOA estimation in IR-UWB system to avoid 2D spectral peak searching. The proposed algorithm firstly gets the initial TOA estimates in the two antennas from the propagation matrix, then utilises successively one-dimensional (1D) local searches to achieve the estimation of TOAs in the two antennas, and finally obtains the DOA estimates via the difference in the TOAs between the two antennas. The proposed algorithm, which only requires 1D local searches, can avoid the high computational cost in 2D-PM algorithm. Furthermore, the proposed algorithm can obtain automatically paired parameters and has better joint TOA and DOA estimation performance than conventional PM algorithm, estimation of signal parameters via rotational invariance techniques algorithm and matrix pencil algorithm. Meanwhile, it has very close parameter estimation to that of 2D-PM algorithm. We have also derived the mean square error of TOA and DOA estimation of the proposed algorithm and the Cramer-Rao bound of TOA and DOA estimation in this paper. The simulation results verify the usefulness of the proposed algorithm.     

系统级封装新型埋入式电源滤波结构的研究

在高密度小尺寸的系统级封装(SiP)中,对供电系统的完整性要求越来越高,多芯片共用一个电源网路所产生的电压抖动除了会影响到芯片的正常工作,还会通过供电网路干扰到临近电路和其他敏感电路,导致芯片误动作,以及信号完整性和其他电磁干扰问题.这种电压抖动所占频带相当宽,几百MHz到几个GHz的中频电源噪声普通方法很难去除.结合埋入式电容和电源分割方法的特点,提出一种新型高性能埋入式电源低通滤波结构直接替代电源/地平面.研究表明,在0.65～4GHz的频带内隔离深度可达-40～75 dB,电源阻抗均在0.25ohm以下,实现了宽频高隔离度的高性能滤波作用.分别用电磁场和广义传输线两种仿真器模拟,高频等效电路模型分析这种低通滤波器的工作原理以及结构对隔离性能的影响,并进行了实验验证.