旋转飞行靶激光辐照参数解析求解

激光辐照参数是研究激光对飞行靶目标毁伤效应的基础,主要包括辐照中心点位置、辐照面域和功率密度分布。以激光辐照水平匀速运动和抛物线运动的旋转圆柱体靶为背景,假定激光辐照飞行靶交汇场景,给出交汇目标参数,建立激光辐照交汇模型;推导出辐照中心点位置、辐照面域和功率密度分布等辐照参数的解析表达式。仿真结果表明:辐照参数是随靶目标飞行不断变化的量;激光功率密度分布为参数不断变化的三维椭圆形高斯函数;靶目标旋转会引起辐照中心点位置和辐照面域的变化,进而对温度场分布和激光毁伤效应产生一定的影响。解析求解结果为研究激光对飞行靶的辐照效应奠定了参数基础。     

γ辐照对硅单晶电学参数的影响

对CZ(直拉法)和FZ(区熔法)硅单晶进行了一定剂量的γ辐照实验,并将辐照前后的电学参数变化进行了对比.结果表明,在实验中所用剂量的γ辐照,对CZ和FZ硅单晶电阻率影响不大而对其少子寿命影响很大.     

激光辐照飞行靶三维温度场数值模拟

以地基激光辐照飞行靶为研究背景,建立激光迎面辐照和横向辐照靶目标两种交汇场景,考虑激光辐照面域和功率密度分布随靶目标飞行的变化,求解激光辐照参数,建立热传导模型;利用有限容积法,得到飞行靶三维温度场的数值解,分析目标运动性对温度场分布的影响。不同于激光辐照静止目标,辐照参数变化对温度场分布有较大的影响:随着靶目标的飞行,辐照面积逐渐减小,平均功率密度逐渐增加,目标温升速率不断增加;光束与靶目标夹角的变化,引起光束强度空间分布的变化,从而影响温升区域的变化。     

目标运动对激光辐照温度场的影响

以地基激光辐照运动目标为研究背景,分析运动目标辐照参数特性对激光辐照温度场的影响。首先,在设定交互场景的基础上,求解激光辐照参数,总结运动目标激光辐照参数的特点为:平均功率密度随目标运动不断变化;辐照面域光束强度空间分布为椭圆形高斯分布;目标表面存在强制热对流。其次,利用有限容积法求解激光辐照运动目标温度场分布。最后,分析运动目标辐照参数特性对温度场分布的影响。分析结果表明:随着目标的运动,激光辐照平均功率密度不断增加,目标温升速率不断增加;激光束辐照运动目标的角度不同,辐照面域的光束强度空间分布不同,温升区域也不相同;运动目标表面存在强制热对流形式的能量交换,减缓了表面温升。     

双极线性稳压器(LM317)的电离总剂量效应及剂量率的影响

对一款双极集成、三端线性稳压器LM317进行了不同偏置、不同剂量率条件下的电离辐射效应及室温退火特性研究。研究结果表明:器件输出电压、输入输出压差等敏感参数在电离辐射环境下发生了不同程度的变化,且在零偏偏置辐照下的变化比工作偏置辐照下的变化大;在零偏偏置条件,总剂量相同时低剂量率辐照下的损伤明显大于高剂量率辐照,表现出低剂量率损伤增强效应;在工作偏置条件,高剂量率辐照下的损伤大于低剂量率辐照下的损伤,但随后的退火实验中恢复到低剂量率辐照损伤水平,表现出时间相关效应。对稳压器辐射敏感参数的影响因素和不同偏置下的剂量率影响进行了分析和讨论。     

激光辐照对长波HgCdTe光导探测器电学参数的影响

对长波HgCdTe光导探测器进行了低于其永久损伤阈值的变功率激光辐照 ,测量辐照前后器件的电阻 温度特性 ,用电阻 温度特性研究材料参数的方法对实验结果进行拟合 ,结果表明辐照后HgCdTe探测器件的组分变大 ,并由此计算得到探测器性能突变后 ,器件的电子迁移率与电子浓度均有一定程度减小。认为这可能是由于激光辐照的热效应使N型HgCdTe光导器件的表面及体内均产生的一定的变化所致     

3ω激光辐照下熔石英的损伤增长研究

对熔石英在三倍频激光条件下损伤尺寸与激光辐照次数的关系进行了测试分析。结果表明,在一定的激光参数(脉宽、波长和能量)下,每个点的损伤尺寸在一定的辐照次数以后基本不再发生变化。当从激光损伤开始发生到损伤尺寸基本不再变化,损伤点的横向直径与激光辐照次数基本呈指数增长关系。     

金属电阻率及电阻器的辐照损伤

本文概述了辐照对金属、单项固溶体合金的电阻率及电阻器的影响,包括核能和空间环境的辐照类型及辐照效应,金属及合金在室温辐照后的电阻率变化及机理,电阻器的辐射容限及在空间环境下参数退化的评价、     

激光辐照对长波HgCdTe光导探测器电学参数的影响

对长波HgCdTe光导探测器进行了低于其永久损伤阈值的变功率激光辐照,测量辐照前后器件的电阻-温度特性,用电阻-温度特性研究材料参数的方法对实验结果进行拟合,结果表明辐照后HgCdTe探测器件的组分变大,并由此计算得到探测器性能突变后,器件的电子迁移率与电子浓度均有一定程度减小.认为这可能是由于激光辐照的热效应使N型HgCdTe光导器件的表面及体内均产生的一定的变化所致.     

LED伏安特性随X射线辐照的变化

测量Ｘ射线辐照对发光二极管正向电压和反向击穿电压的影响。分析了由Ｘ射线辐照引起ＬＥＤ伏安特性变化的机理。实验结果表明一定剂量Ｘ射线辐照有助于改善器件电学特性     

一种电流跟踪补偿的输入输出全摆幅运算放大器

介绍了一种工作在2.5V电压下、具有全摆幅输入与输出功能的两级CMOS运算放大器。通过一种简单有效的电流跟踪电路实现了输入跨导恒定的要求，这样使得频率补偿变得容易实现；为了降低功耗，输入级工作在弱反型区：输出级采用带有前馈控制电路的AB类输出电路，实现了输出信号的轨至轨。电路具有结构简单、功耗低、面积小、性能高等优点。     

Design and applications of an easily integrable CMOS operational floating amplifier for the MegaHertz range

The design and major applications of a general purpose current mode building block are presented in this paper. This circuit is basically a high gain transconductance scheme with differential current output terminals previously termed operational floating amplifier (OFA). The novel structure proposed here is shown to implement a very flexible and high performance amplifier which can be used in almost all applications employing conveyors, current feedback amplifiers or even conventional operational amplifiers with improved performance characteristics. This presentation is also supported by experimental measurements on a prototype circuit realized in CMOS technology.     

A differential-input,differential-output current mode operational amplifier

A current operational amplifier with differential input and differential output is described. The amplifier is based on the parallel connection of a CCII+ current conveyor and a CCII? current conveyor followed by a differential output transconductance gain stage. The performance of the amplifier is analysed and experimental results obtained from an implementation using standard operational amplifiers and current mirrors realized using transistor arrays are presented and compared to the theoretical analysis. It is concluded that the static small signal open loop gain and the frequency response matches the performance of conventional voltage operational amplifiers. The input offset and bias errors and the common mode rejection are shown to be strongly dependent on the matching accuracy of the current mirrors used in the conveyors. The proposed configuration can easily be integrated into a monolithic amplifier in either CMOS or bipolar technology.     

A CMOS current-mode operational amplifier

A fully differential-input, differential-output, current-mode operational amplifier (COA) is described. The amplifier utilizes three second-generation current conveyors (CCIIs) as the basic building blocks. It can be configured to provide either a constant gain-bandwidth product in a fully balanced current-mode feedback amplifier or a constant bandwidth in a transimpedance feedback amplifier. The amplifier is found to have a gain-bandwidth product of 3 MHz, an offset current of 0.8 μA (signal range ±700 μA), and a (theoretically) unlimited slew rate. The amplifier is realized in a standard CMOS 2.4-μm process     

System on chip thermal vacuum sensor based on standard CMOS process

An on-chip microelectromechanical system was fabricated in a 0.5μm standard CMOS process for gas pressure detection. The sensor was based on a micro-hotplate (MHP) and had been integrated with a rail to rail operational amplifier and an 8-bit successive approximation register (SAR) A/D converter. A tungsten resistor was manufactured on the MHP as the sensing element, and the sacrificial layer of the sensor was made from polysilicon and etched by surface-micromachining technology. The operational amplifier was configured to make the sensor operate in constant current mode. A digital bit stream was provided as the system output. The measurement results demonstrate that the gas pressure sensitive range of the vacuum sensor extends from 1 to 105 Pa. In the gas pressure range from 1 to 100 Pa, the sensitivity of the sensor is 0.23 mV/Pa, the linearity is 4.95%, and the hysteresis is 8.69%. The operational amplifier can drive 200 Ω resistors distortionlessly, and the SAR A/D converter achieves a resolution of 7.4 bit with 100 kHz sample rate. The performance of the operational amplifier and the SAR A/D converter meets the requirements of the sensor system.     

一种恒跨导CMOS运算放大器的设计

设计了一种宽带轨对轨运算放大器,此运算放大器在3.3 V单电源下供电,采用电流镜和尾电流开关控制来实现输入级总跨导的恒定。为了能够处理宽的电平范围和得到足够的放大倍数,采用用折叠式共源共栅结构作为前级放大。输出级采用AB类控制的轨对轨输出。频率补偿采用了级联密勒补偿的方法。基于TSMC 2.5μm CMOS工艺,电路采用HSpice仿真,该运放可达到轨对轨的输入/输出电压范围。     

0.9 V rail-to-rail constant gm CMOS amplifier input stage

Presented is a 0.9 V rail-to-rail constant g_m CMOS amplifier input stage consisting of complementary differential pairs and a g_m control circuit. The g_m control circuit eliminates the g_m dead zone, which occurs in the conventional rail-to-rail amplifier with ultra-low supply voltages. The proposed amplifier input stage has a constant g_m that varies by ±2.3% for rail-to-rail input common-mode levels. To verify the proposed amplifier design, an experimental prototype operational amplifier is also implemented using 0.35 mm standard CMOS technology.     

ICL7650-CMOS斩波集成运放简介及应用

介绍了ICL7650 CMOS斩波集成运算放大结构和性能,输入级使用MOS场效应管,采用斩波自动稳零结构,附带调制和解调等措施,具有输入偏置电流小,低失调电压和温度漂移以及精密的反馈特性和高的共模抑制比能力。并采用该器件实现了一个积分电路,该电路零位可以调整,抑制干扰,降低噪声,是很好的传感器信号预处理电路。     

低噪声低功耗斩波运放的分析与设计

CMOS运放的噪声尤其是低频1/f噪声会随着整体功耗的降低而急剧增加,针对传感器读出电路应用,文中在传统斩波运放的基础上设计了一个低噪声、低功耗的嵌套式斩波运算放大器。基于SMIC0.18 μm工艺,通过Spectre仿真工具进行仿真与验证。高频斩波(fchop,high)频率为500 kHz,低频斩波频率(fchop,low)为2 kHz时的仿真结果表明,运放在100 Hz处的噪声功率谱密度(Power Spectral Density,PSD)降为23 nV[KF(]Hz[KF)],总消耗电流14 μA,放大器的增益带宽积(GBW)为16.7 MHz,运放的电流效率(GBW/Itot)达到了1 193,该设计的整体性能与以往的设计相比具有一定优势。     

一种3 V CMOS恒跨导运算放大器的设计

提出了一种适合在3V电源电压下工作的CMOS运算放大器，其动态工作范围为0-3V，在整个工作范围内，运算放大器的跨导基本保持不变，给出了BSIM3V3模型下的Hspice模拟结果。