Suspension of nanoparticles in SU-8: Processing and characterization of nanocomposite polymers

Composite materials consisting of polymers and nanoparticles can provide additional functionality to existing formulations. Diamondoids, single-wall carbon nanotubes (SWNT), and gold nanospheres were physically incorporated into the negative photoresist SU-8 to investigate their effects on residual stresses and introduce piezoresistivity. The mixtures were spin cast onto silicon or aluminum-coated silicon wafers, lithographically patterned and released from the substrate. The residual stresses, elastic moduli, and viscosity effects of the nanocomposites were measured and compared with those of control samples of SU-8. Electrical properties of SU-8/SWNT nanocomposites were also investigated. The effective elastic modulus of SU-8/diamantane samples remained approximately 1.5-1.6 GPa until the diamantane content exceeded 7 wt%. The viscosity of SU-8/diamantane nanocomposite samples of all tested weight percents decreased compared with control SU-8 at high shear rates (>20 Hz), though high weight percent solutions (>5%) had increased low-frequency viscosity. The effective elastic modulus of the SU-8/SWNT nanocomposites decreased with small wt% additions of SWNT. Additionally, SU-8/SWNT nanocomposites showed increased resistivity with increased strain, suggesting a gauge factor for the 1 wt% SU-8/SWNT nanocomposite of approximately 2-4.     

SU-8胶与基底结合特性的实验研究

SU-8胶是一种负性、环氧树脂型、近紫外线光刻胶。它适于制作超厚、高深宽比的MEMS微结构。为电铸造出金属微结构，通常需要采用金属基底。但SU-8胶对金属基底的结合力通常不好，因而限制了其深宽比的提高。从SU-8胶与基底的浸润性、基底表面粗糙度以及基底对近光紫外光的折射特性入手，对SU-8胶与基底的结合力进行分析，首次指出：在近紫外光的折射率高的基底与SU-8胶有很好的结合性。经实验得出经过氧化处理的TI片的SU-8胶的结合性强。这有利于为MEMS提供低成本，高深宽比的金属微结构。     

降低SU-8光刻胶侧壁粗糙度的研究

SU-8负性光刻胶可通过UV-LIGA技术得到高深宽比微结构,是微机械系统(MEMS)制造中极具前景的一种技术。目前已有对于SU-8微结构的线宽变化,侧壁倾角,表面粗糙度,增加深宽比等方面的大量研究,但是鲜有对于SU-8微结构侧壁粗糙度的研究。该文从造成微结构侧壁粗糙度的原因入手,讨论了各个工艺参数对侧壁粗糙度的影响,并且通过优化工艺参数达到了降低SU-8微结构侧壁粗糙度的目的。     

Two-photon polymerization fabrication and Raman spectroscopy research of SU-8 photoresist using the femtosecond laser

In this work, a two-photon polymerization (2PP) processing device was built using the femtosecond laser, and femtosecond laser direct writing was performed on SU-8 photoresist. Due to the 2PP effect of the photoresist caused by the femtosecond laser, the polymeric line with size less than the focal spot size is obtained. Based on the Raman spectroscopy characterization of SU-8 polymer before and after 2PP, we research the dynamic process of femtosecond laser induced 2PP. In Raman spectra, some scattering peaks with large intensity variation, such as 1 108 cm-1 and 1 183 cm-1, indicate that the asymmetric stretching vibration of C-O-C bond in SU-8 polymer is increased. By comparison, we can find that 2PP only affects the light absorption of initiator, but does not affect the monomer polymerization. It is helpful to understand the interaction of photoresist and femtosecond laser, and plays an important role in quantitatively controlling the polymerization degree of SU-8 polymer and improving the processing resolution of 2PP. This work has been supported by the National Basic Research Program of China (No.2010CB934101), and the National Natural Science Foundation of China (No.11404173) E-mail:nkwangzh@nankai.edu.cn      

Experimental study on ultrasonic stress relief for cured SU-8 photoresist layer

The purpose of this work is to reduce the internal stress in cured SU-8 photoresist layer by ultrasonic stress relief technology. The stress relief mechanism of SU-8 photoresist layer was presented. Based on improved Stoney’s formula, a theoretical calculation model for SU-8 internal stress was proposed. Profile method was used to measure the curvature radius of substrate. The effect of ultrasonic stress relief on SU-8 layers was studied by experiments. Meanwhile, some important factors, such as amplitude of vibration, power input and relief time, have been discussed. The values of internal stress before and after the ultrasonic stress relief process were compared. The experimental results show that the internal stress in cured SU-8 layers can be effectively reduced if the proper experimental parameters are chosen.     

SU-8环氧树脂的分离实验研究

为分析和解决商业用SU-8胶在355 nm波长的吸收性和后烘缩胶等问题,先采用柱层析对SU-8环氧树脂进行分离,然后进一步用高压液相色谱-尺寸排阻色谱法对SU-8环氧树脂进行分离和分析。结果表明,SU-8环氧树脂包括SU-1,SU-2,SU-4,SU-6和SU-8多种组分及其它杂质,分子量分布在100-100 000的范围。根据分析结果,研究了上述问题出现的原因,并配制了性能优化的SU-8光刻胶,结合全息光刻技术制作了三维光子晶体。     

MEMS螺线管型电感器正负胶结合的加工工艺

MEMS螺线管型电感器由于具有很多优点，其用途或潜在用途相当广泛 。为了获得高质量的MEMS螺线管型电感器，在充分利用SU-8特点的基础上，结合使用正胶AZ-4000系列和负胶SU-8系列，新开发了UV-LIGA多层微加工工艺，它主要包括：在基片上溅射Cr/Cu作为电镀种子层，涂布正胶，紫外光刻得到电镀模具，电镀Cu和FeNi分别得到线圈的下层、中层和上层以及铁芯；在完成下层和中层后，分别进行一次负胶工艺以形成电绝缘层和后续结构的支撑平台，即涂布负胶覆盖较下层结构，光刻开通往较上一层的通道并使SU-8聚合、交联以满足性能要求。实验表明该工艺是可行和实用的。它除了可用于螺线管电感器的加工，还可以用来加工其它三维结构的MEMS器件。     

不同波段近紫外光在SU-8胶中穿透深度的研究

通过对SU—8胶近紫外波段下透射光谱的分析，得到不同波长近紫外光在SU—8胶中的穿透深度，并分析了不同波段近紫外光对SU—8胶微结构的影响，结果表明穿透深度大的近紫外波段曝光出来的图形质量好，深宽比大，侧壁陡直。     

自写入光波导聚合物微透镜阵列的设计与制作

利用聚合物SU-8光刻胶在激光作用下折射率会发生变化的特点,将其作为最后的光学材料,采用光刻胶热熔法和图形转移法,设计并制作了填充因子接近0.75、自写入光波导、六角排列的微透镜阵列。对阵列的表面形态、三维结构和光学性能分别进行了观察、测试与分析,发现用SU-8胶制作的微透镜阵列外观良好,边缘清晰;自写入光波导微透镜阵列的三维结构良好;波导末梢的光点分布均匀,光强一致性高。这种自写入光波导的微透镜阵列降低了透镜阵列与探测阵列精确装配的难度,而且其制作工艺流程简单、成本低廉、适合批量复制,这种阵列元件还有质量轻、体积小的特点,有很广的应用前景。     

应用三维线算法的SU-8胶光刻过程模拟

采用二维法向量作为分量,加权求和近似得到三维网格点上的单位法向量,将经典的二维线算法改进为三维形式。综合SU-8胶光刻过程中衍射、吸收率随光刻胶深度的变化及交联显影等各种效应,应用该三维线算法对SU-8化学放大胶进行光刻过程三维建模。该模型对被加工表面演化过程的模拟较为精确,可在实际应用中对SU-8胶的光刻模拟结果进行有效预测。     

PDMS多层次蘑菇形微结构的制作

提出了一种基于光刻胶牺牲层技术的用于制作多层次SU-8模具的新方法,并进一步采用浇注成型的方法制作了聚二甲基硅氧烷(PDMS)多层次蘑菇形微结构。在多层次SU-8模具的制作过程中,使用了正性光刻胶BP212作为牺牲层,并采用超声辅助显影的方法使显影的时间大大缩短。通过对多层次SU-8模具预处理,有效减小了多层次SU-8模具与PDMS的结合力,从而提高了PDMS脱模的成功率。对制作的PDMS多层次蘑菇形微结构和PDMS单层次微柱结构进行了接触角测试。结果表明,PDMS多层次蘑菇形微结构的接触角为150.93°±1.6°,PDMS单层次微柱结构的接触角为139.19°±0.1°。由此可知PDMS多层次蘑菇形微结构具有优异的超疏水性能。     

间歇悬浮式厚胶显影工艺研究

介绍了一种间歇悬浮式厚胶显影工艺,采用该种显影工艺,对使用SU-8光刻胶进行涂胶,胶层厚度大于30μm的晶片进行显影。显影后的晶片进行电镀工艺,经过对显影后晶片上图形的观察和对电镀凸点的分析,证明该种显影工艺具有很好的效果。     

A facile micropatterning method for a highly flexible PEDOT:PSS on SU-8

We report the micropatterning of conducting polymer on the epoxy-based photoresist to demonstrate fully organic, conducting and flexible electrodes. We show that polystyrene sulfonic acid can be covalently linked to the surface of the photoresist (SU-8) by forming sulfonyl ester at the interfaces. We also present an application of the patterned PEDOT:PSS (poly(3,4-ethylenedioxythiophene) polystyrene sulfonate)/SU-8 to the electroplating of metal electrodes.     

Moisture resistance of SU-8 and KMPR as structural material

This paper treats the moisture resistance of SU-8 and KMPR, two photoresists considered as structural material in microsystems. Our experiments focus on the moisture resistance of newly developed radiation imaging detectors containing these resists. Since these microsystems will be used unpackaged, they are susceptible to all kinds of environmental conditions. Already after 1 day of exposure to a humid condition the structural integrity and adhesion of SU-8 structures, measured by a shear test is drastically reduced. KMPR photoresist shows much stronger moisture resistance properties, making it a suitable alternative in our application.     

玻璃纤维增强SU-8胶技术

SU-8胶是一种能够以低成本制作高深宽比微结构的负性光刻胶,在非硅微电子机械系统(MEMS)领域具有广阔的应用前景。针对SU-8胶作为微结构材料时,其弹性模量和断裂强度较低的特性,采用透明度高的微细玻璃纤维作为增强相材料,制备玻璃纤维/SU-8复合材料。开发出一种既能够增强成型后SU-8微结构机械强度,又不影响SU-8可直接光刻成型能力的改性技术。通过光学显微镜和扫描电子显微镜(SEM)对该复合材料的微观结构进行了分析和表征。同时,利用拉伸实验对复合材料的机械性能进行测试。实验结果表明,在不改变紫外光刻电铸(UV-LIGA)的光刻-显影工艺特征的条件下该复合材料的弹性模量(1 613 MPa)、断裂伸长率(1.63%)和断裂强度(26.7 MPa)均比纯SU-8胶材料有较大提升。     

Micromachined 2D nanoelectrospray emitter [mass spectrometer applications]

A novel 2D nanoelectrospray emitter for mass spectrometry has been micromachined using photoresist SU-8 on silicon substrates using one-step photomasking. The design contains a reservoir, a capillary slot and an emitter tip. The emitters were successfully tested on an ion trap mass spectrometer. A nanoelectrospray was observed at voltages as low as 0.8 kV.     

Intermediate wafer level bonding and interface behavior

The paper presents a new silicon wafer bonding technique. The high-resolution bonding pad is defined through photolithography process. Photosensitive materials with patternable characteristics are served as the adhesive intermediate bonding layer between the silicon wafers. Several types of photosensitive materials such as SU-8 (negative photoresist), AZ-4620 (positive photoresist), SP341 (polyimide), JSR (negative photoresist) and BCB (benzocylbutene) are tested and characterized for their bonding strength. An infrared (IR) imaging system is established to examine the bonding results. The results indicate that SU-8 is the best bonding material with a bonding strength up to 213 kg/cm² (20.6 MPa) at bonding temperature less than 90 °C. The resolution of bonding pad of 10 μm can be achieved. The developed low temperature bonding technique is particularly suitable for the integration of microstructures and microelectronics involved in MEMS and VLSI packaging processes.     

Analysis of an octagonal micromachined horn antenna forsubmillimeter-wave applications

An analysis is presented of a new horn antenna, fabricated by a novel micromachining technique, that uses crystallographic etching of silicon and ultraviolet lithography of an ultra-thick photoresist (SU-8). The horn was found to have low cross-polarized field levels and a predicted Gaussian coupling efficiency of 92.5%. The horn shape is governed by the crystal planes of the silicon substrate and the thickness of the photoresist and has up to four independent design parameters that allow a wide range of antenna patterns. A design for the horn that yields symmetric beam patterns was investigated by computer analysis, microwave scale modeling, and measurements of a micromachined horn at 585 GHz. The major features of the 585-GHz beam patterns agree well with the computer-generated and scaled beam patterns. We have thus demonstrated a new micromachinable horn that has great potential for integration into array structures     

SU-8胶双光子微加工分辨率与工艺条件研究

为了提高SU-8光刻胶的微加工分辨率,利用飞秒激光双光子聚合技术研究了SU-8光刻胶微加工时的加工工艺条件与分辨率之间的关系.实验在本研究组自主研制的纳米光子学超细微加工系统上进行,以钛蓝宝石飞秒激光器发出的780 nm波长激光作为加工光源,考察了不同激光功率与曝光时间等激光加工条件和后烤与无后烤等工艺条件对SU-8聚...     

Microstructuring of SU-8 photoresist by UV-assisted thermal imprinting with non-transparent mold

In this study, we explored a rapid and low-cost process for patterning in a SU-8 photoresist by thermal imprinting with a non-transparent mold such as Ni mold. One of major obstacles in the process is that the extremely good formability of uncured SU-8 even near room temperature causes the collapse of imprinted patterns during and after de-molding because a sample cannot be exposed to UV light during imprinting owing to the non-transparency of a mold. To overcome this problem, un-cured SU-8 resists were pre-treated with UV light, heat, and O₂ plasma for controlling their formability, and applied to thermal imprint tests to be compared each other in terms of the replication fidelity. As a result, a SU-8 sample pre-treated with UV light for 8 s resulted in the best replication quality for given imprint conditions and mold dimensions, and we could successfully replicate micro patterns in SU-8 resist without a quartz mold. As compared with conventional UV-imprint processes, this process has potential merits such as a lower mold cost, an easier mold release and a less air-entrapment.