Front and rear silicon‐nitride‐passivated multicrystalline silicon solar cells with an efficiency of 18.1%

A solar cell process designed to utilise low‐temperature plasma‐enhanced chemical vapour deposited (PECVD) silicon nitride (SiN_x) films as front and rear surface passivation was applied to fabricate multicrystalline silicon (mc‐Si) solar cells. Despite the simple photolithography‐free processing sequence, an independently confirmed efficiency of 18.1% (cell area 2 × 2 cm²) was achieved. This excellent efficiency can be predominantly attributed to the superior quality of the rear surface passivation scheme consisting of an SiN_x film in combination with a local aluminium back‐surface field (LBSF). Thus, it is demonstrated that low‐temperature PECVD SiN_x films are well suited to achieve excellent rear surface passivation on mc‐Si. Copyright © 2002 John Wiley & Sons, Ltd.     

Bulk and surface passivation of silicon solar cells accomplished by silicon nitride deposited on industrial scale by microwave PECVD

Bulk and surface passivation by silicon nitride has become an indispensable element in industrial production of multicrystalline silicon (mc‐Si) solar cells. Microwave PECVD is a very effective method for high‐throughput deposition of silicon nitride layers with the required properties for bulk and surface passivation. In this paper an analysis is presented of the relation between deposition parameters of microwave PECVD and material properties of silicon nitride. By tuning the process conditions (substrate temperature, gas flows, working pressure) we have been able to fabricate silicon nitride layers which fulfill almost ideally the four major requirements for mc‐Si solar cells: (1) good anti‐reflection coating (refractive index tunable between 2·0 and 2·3); (2) good surface passivation on p‐type FZ wafers (S_eff<30 cm/s); (3) good bulk passivation (improvement of IQE at 1000 nm by 30% after short thermal anneal); (4) long‐term stability (no observable degradation after several years of exposure to sunlight). By implementing this silicon nitride deposition in an inline production process of mc‐Si solar cells we have been able to produce cells with an efficiency of 16·5%. Finally, we established that the continuous deposition process could be maintained for at least 20 h without interruption for maintenance. On this timescale we did not observe any significant changes in layer properties or cell properties. This shows the robustness of microwave PECVD for industrial production. Copyright © 2005 John Wiley & Sons, Ltd.     

SiOyNx/SiNx stack: a promising surface passivation layer for high‐efficiency and potential‐induced degradation resistant mc‐silicon solar cells

A thin SiO_yN_x film was inserted below a conventional SiN_x antireflection coating used in c‐Si solar cells in order to improve the surface passivation and the solar cell's resistance to potential‐induced degradation (PID). The effect of varying the flow ratio of the N₂O and SiH₄ precursors and the deposition temperature for the SiO_yN_x thin film upon material properties were systematically investigated. An excellent surface passivation was obtained on FZ p‐type polished silicon wafers, with the best results obtained with a SiO_yN_x film deposited at a very low temperature of 130 °C and with an optical refractive index of 1.8. In the SiO_yN_x/SiN_x stack structure, a SiO_yN_x film with ~6 nm thickness is sufficient to provide excellent surface passivation with an effective surface recombination velocity S_eff < 2 cm/s. Furthermore, we applied the optimized SiO_yN_x/SiN_x stack on multicrystalline Si solar cells as a surface passivation and antireflection coating, resulting in a 0.5% absolute average conversion efficiency gain compared with that of reference cells with conventional SiN_x coating. Moreover, the cells with the SiO_yN_x/SiN_x stack layers show a significant increase in their resistance to PID. Nearly zero degradation in shunt resistance was obtained after 24 h in a PID test, while a single SiN_x‐coated silicon solar cell showed almost 50% degradation after 24 h. Copyright © 2016 John Wiley & Sons, Ltd.     

Simulation and fabrication of heterojunction silicon solar cells from numerical computer and hot‐wire CVD

In this paper, we will present a Pc1D numerical simulation for heterojunction (HJ) silicon solar cells, and discuss their possibilities and limitations. By means of modeling and numerical computer simulation, the influence of emitter‐layer/intrinsic‐layer/crystalline‐Si heterostructures with different thickness and crystallinity on the solar cell performance is investigated and compared with hot wire chemical vapor deposition (HWCVD) experimental results. A new technique for characterization of n‐type microcrystalline silicon (n‐µc‐Si)/intrinsic amorphous silicon (i‐a‐Si)/crystalline silicon (c‐Si) heterojunction solar cells from Pc1D is developed. Results of numerical modeling as well as experimental data obtained using HWCVD on µc‐Si (n)/a‐Si (i)/c‐Si (p) heterojunction are presented. This work improves the understanding of HJ solar cells to derive arguments for design optimization. Some simulated parameters of solar cells were obtained: the best results for J_sc = 39·4 mA/cm², V_oc = 0·64 V, FF = 83%, and η = 21% have been achieved. After optimizing the deposition parameters of the n‐layer and the H₂ pretreatment of solar cell, the single‐side HJ solar cells with J_sc = 34·6 mA/cm², V_oc = 0·615 V, FF = 71%, and an efficiency of 15·2% have been achieved. The double‐side HJ solar cell with J_sc = 34·8 mA/cm², V_oc = 0·645 V, FF = 73%, and an efficiency of 16·4% has been fabricated. Copyright © 2009 John Wiley & Sons, Ltd.     

Industrial high‐rate (∼5 nm/s) deposited silicon nitride yielding high‐quality bulk and surface passivation under optimum anti‐reflection coating conditions

High‐quality surface and bulk passivation of crystalline silicon solar cells has been obtained under optimum anti‐reflection coating properties by silicon nitride (a‐SiN_x:H) deposited at very high deposition rates of ∼5 nm/s. These a‐SiN_x:H films were deposited using the expanding thermal plasma (ETP) technology under regular processing conditions in an inline industrial‐type reactor with a nominal throughput of 960 solar cells/hour. The low surface recombination velocities (50–70 cm/s) were obtained on p‐type silicon substrates (8·4 Ω cm resistivity) for as‐deposited and annealed films within the broad refractive index range of 1·9–2·4, which covers the optimum bulk passivation and anti‐reflection coating performance reached at a refractive index of ∼2·1. Copyright © 2005 John Wiley & Sons, Ltd.     

Bulk passivation of multicrystalline silicon solar cells induced by high‐rate‐deposited (> 1 nm/s) silicon nitride films

Silicon nitride (a‐SiN_x:H) films deposited by the expanding thermal plasma at high rate (> 1 nm/s) have been studied for application as anti‐reflection coatings for multicrystalline silicon (mc‐Si) solar cells. Internal quantum efficiency measurements have revealed that bulk passivation is achieved after a firing‐through process of the a‐SiN_x:H as deposited from NH₃/SiH₄ and N₂/SiH₄ plasmas. However, the a‐SiN_x:H films deposited from N₂/SiH₄ show a lower passivation quality than those deposited from NH₃/SiH₄. This has been attributed to a poorer thermal stability of the films deposited from the N₂/SiH₄ plasma, resulting in structural changes within the film during the firing step. Copyright © 2002 John Wiley & Sons, Ltd.     

Screen‐printed epitaxial silicon thin‐film solar cells with 13·8% efficiency

Amidst the different silicon thin‐film systems, the epitaxial thin‐film solar cell represents an approach with interesting potential. Consisting of a thin active c‐Si layer grown epitaxially on top of a low‐quality c‐Si substrate, it can be implemented into solar cell production lines without major changes in the current industrial process sequences. Within this work, ∼30‐μm‐thick epitaxial layers on non‐textured and highly doped monocrystalline Czochralski (Cz) and multicrystalline (mc) Si substrates have been prepared by CVD. Confirmed efficiencies of 13·8% on Cz and 12·3% on mc‐Si substrates have been achieved by applying an industrial process scheme based on tube and in‐line phosphorus diffusion, as well as screen‐printed front and back contacts fired through a SiN_x anti‐reflection coating. An extensive solar cell characterisation, including infrared lock‐in thermography and spectral response measurements is presented. Copyright © 2003 John Wiley & Sons, Ltd.     

High efficiency screen‐printed EFG Si solar cells through rapid thermal processing‐induced bulk lifetime enhancement

This paper shows that one second (1 s) firing of Si solar cells with screen‐printed Al on the back and SiN _x anti‐reflection coating on the front can produce a high quality Al‐doped back‐surface‐field (Al‐BSF) and significantly enhance SiN _x ‐induced defect hydrogenation in the bulk Si. Open‐circuit voltage, internal quantum efficiency measurements, and cross‐sectional scanning electron microscopy pictures on float‐zone silicon cells revealed that 1 s firing in rapid thermal processing at 750°C produces just as good a BSF as 60 s firing, indicating that the quality of Al‐BSF region is not a strong function of RTP firing time at 750°C. Analysis of edge‐defined film‐fed grown (EFG) Si cells showed that short‐term firing is much more effective in improving the hydrogen passivation of bulk defects in EFG Si. Average minority‐carrier lifetime in EFG wafers improved from ∼3 to ∼33 μs by 60 s firing but reached as high as 95μs with 1 s firing, resulting in 15·6% efficient screen‐printed cells on EFG Si. Copyright © 2004 John Wiley & Sons, Ltd.     

Laser‐fired contact optimization in c‐Si solar cells

In this work we study the optimization of laser‐fired contact (LFC) processing parameters, namely laser power and number of pulses, based on the electrical resistance measurement of an aluminum single LFC point. LFC process has been made through four passivation layers that are typically used in c‐Si and mc‐Si solar cell fabrication: thermally grown silicon oxide (SiO₂), deposited phosphorus‐doped amorphous silicon carbide (a‐SiC_x/H(n)), aluminum oxide (Al₂O₃) and silicon nitride (SiN_x/H) films. Values for the LFC resistance normalized by the laser spot area in the range of 0.65–3 mΩ cm² have been obtained. Copyright © 2011 John Wiley & Sons, Ltd.     

Thin Al2O3 passivated boron emitter of n‐type bifacial c‐Si solar cells with industrial process

We have presented thin Al₂O₃ (~4 nm) with SiN_x:H capped (~75 nm) films to effectively passivate the boron‐doped p⁺ emitter surfaces of the n‐type bifacial c‐Si solar cells with BBr₃ diffusion emitter and phosphorus ion‐implanted back surface field. The thin Al₂O₃ capped with SiN_x:H structure not only possesses the excellent field effect and chemical passivation, but also establishes a simple cell structure fully compatible with the existing production lines and processes for the low‐cost n‐type bifacial c‐Si solar cell industrialization. We have successfully achieved the large area (238.95 cm²) high efficiency of 20.89% (front) and 18.45% (rear) n‐type bifacial c‐Si solar cells by optimizing the peak sintering temperature and fine finger double printing technology. We have further shown that the conversion efficiency of the n‐type bifacial c‐Si solar cells can be improved to be over 21.3% by taking a reasonable high emitter sheet resistance. Copyright © 2017 John Wiley & Sons, Ltd.     

20.0% Efficiency Si Nano/Microstructures Based Solar Cells with Excellent Broadband Spectral Response

Spectral response of solar cells determines the output performance of the devices. In this work, a 20.0% efficient silicon (Si) nano/microstructures (N/M‐Strus) based solar cell with a standard solar wafer size of 156 × 156 mm² (pseudo‐square) has been successfully fabricated, by employing the simultaneous stack SiO₂/SiN_x passivation for the front N/M‐Strus based n⁺‐emitter and the rear surface. The key to success lies in the excellent broadband spectral responses combining the improved short‐wavelength response of the stack SiO₂/SiN_x passivated Si N/M‐Strus based n⁺‐emitter with the extraordinary long‐wavelength response of the stack SiO₂/SiN_x passivated rear reflector. Benefiting from the broadband spectral response, the highest open‐circuit voltage (V_oc) and short‐circuit current density (J_sc) reach up to 0.653 V and 39.0 mA cm^?2, respectively. This high‐performance screen‐printed Si N/M‐Strus based solar cell has shown a very promising way to the commercial mass production of the Si based high‐efficient solar cells.     

Extremely low surface recombination velocities on low‐resistivity n‐type and p‐type crystalline silicon using dynamically deposited remote plasma silicon nitride films

Extremely low upper‐limit effective surface recombination velocities (S_eff.max) of 5.6 and 7.4 cm/s, respectively, are obtained on ~1.5 Ω cm n‐type and p‐type silicon wafers, using silicon nitride (SiN_x) films dynamically deposited in an industrial inline plasma‐enhanced chemical vapour deposition (PECVD) reactor. SiN_x films with optimised antireflective properties in air provide an excellent S_eff.max of 9.5 cm/s after high‐temperature (>800 °C) industrial firing. Such low S_eff.max values were previously only attainable for SiN_x films deposited statically in laboratory reactors or after optimised annealing; however, in our case, the SiN_x films were dynamically deposited onto large‐area c‐Si wafers using a fully industrial reactor and provide excellent surface passivation results both in the as‐deposited condition and after industrial‐firing, which is a widely used process in the photovoltaic industry. Contactless corona‐voltage measurements reveal that these SiN_x films contain a relatively high positive charge of (4–8) × 10¹² cm⁻² combined with a relatively low interface defect density of ~5 × 10¹¹ eV⁻¹ cm⁻². Copyright © 2012 John Wiley & Sons, Ltd.     

Experimental evidence of parasitic shunting in silicon nitride rear surface passivated solar cells

Many solar cells incorporating SiN_x films as a rear surface passivation scheme have not reached the same high level of cell performance as solar cells incorporating high‐temperature‐grown silicon dioxide films as a rear surface passivation. In this paper, it is shown by direct comparison of solar cells incorporating the two rear surface passivation schemes, that the performance loss is mainly due to a lower short‐circuit current while the open‐circuit voltage is equally high. With a solar cell test structure that features a separation of the rear metal contacts from the passivating SiN_x films, the loss in short‐circuit current can be reduced drastically. Besides a lower short‐ circuit current, dark I–V curves of SiN_x rear surface passivated solar cells exhibit distinct shoulders. The results are explained by parasitic shunting of the induced floating junction (FJ) underneath the SiN_x films with the rear metal contacts. The floating junction is caused by the high density of fixed positive charges in the SiN_x films. Other two‐dimensional effects arising from the injection level dependent SRV of the Si/SiN_x interfaces are discussed as well, but, are found to be of minor importance. Pinholes in the SiN_x films and optical effects due to a different internal rear surface reflectance can be excluded as a major cause for the performance loss of the SiN_x rear surface passivated cells. Copyright © 2002 John Wiley & Sons, Ltd.     

20.7% efficient ion‐implanted large area n‐type front junction silicon solar cells with rear point contacts formed by laser opening and physical vapor deposition

In this work, we report on ion‐implanted, high‐efficiency n‐type silicon solar cells fabricated on large area pseudosquare Czochralski wafers. The sputtering of aluminum (Al) via physical vapor deposition (PVD) in combination with a laser‐patterned dielectric stack was used on the rear side to produce front junction cells with an implanted boron emitter and a phosphorus back surface field. Front and back surface passivation was achieved by thin thermally grown oxide during the implant anneal. Both front and back oxides were capped with SiN_x, followed by screen‐printed metal grid formation on the front side. An ultraviolet laser was used to selectively ablate the SiO₂/SiN_x passivation stack on the back to form the pattern for metal–Si contact. The laser pulse energy had to be optimized to fully open the SiO₂/SiN_x passivation layers, without inducing appreciable damage or defects on the surface of the n⁺ back surface field layer. It was also found that a low temperature annealing for less than 3 min after PVD Al provided an excellent charge collecting contact on the back. In order to obtain high fill factor of ~80%, an in situ plasma etching in an inert ambient prior to PVD was found to be essential for etching the native oxide formed in the rear vias during the front contact firing. Finally, through optimization of the size and pitch of the rear point contacts, an efficiency of 20.7% was achieved for the large area n‐type passivated emitter, rear totally diffused cell. Copyright © 2014 John Wiley & Sons, Ltd.     

Obtaining a higher Voc in HIT cells

We have achieved a very high conversion efficiency of 21·5% in HIT cells with a size of 100·3 cm². One of the most striking features of the HIT cell is its high open‐circuit voltage V_oc, in excess of 710 mV. This is due to the excellent surface passivation at the a‐Si/c‐Si heterointerface realized by Sanyo's successful technologies for fabricating high‐quality a‐Si films and solar cells with low plasma damage processes. We have studied ways to treat the surface to produce a good interface throughout our fabrication processes. We have also investigated the deposition conditions of a‐Si layers for optimizing the barrier height for the minority carriers in the heterojunction. Our approach for obtaining HIT cells with a high V_oc is reviewed here. Copyright © 2005 John Wiley & Sons, Ltd.     

Development of a‐SiOx:H solar cells with very high Voc × FF product

In this study, deposition conditions for making a‐SiO_x:H are investigated systematically in order to obtain a high band gap material. We found that at given optical band gap, a‐SiO_x:H with favorable opto‐electronic properties can be obtained when deposited using low CO₂ flow rates and deposition pressures. We also found that a low radio frequency power density is required in order to limit the effect of ion bombardment on the material properties of i‐a‐SiO_x:H and thereby the solar cell performance. In addition, by decreasing the heater temperature from 300 to 200°C when making the i‐a‐SiO_x:H, the V_oc can be increased. We employed optimized p‐doped and n‐doped a‐SiO_x:H films into the p‐i‐n solar cells, and as a consequence, a high V_oc of over 1 V and high fill factor (FF) are obtained. When depositing on texture‐etched ZnO:Al substrates, a high efficiency a‐SiO_x:H single junction solar cell having a high V_oc × FF product of 0.761 (V_oc: 1.042 V, J_sc: 10.3 mA/cm², FF: 0.73, efficiency: 7.83%) was obtained. The a‐SiO_x:H solar cell shows comparable light degradation characteristics to standard a‐Si:H solar cells. Copyright © 2014 John Wiley & Sons, Ltd.     

Development of high‐performance multicrystalline silicon for photovoltaic industry

The low cost and high quality of multicrystalline silicon (mc‐Si) based on directional solidification has become the main stream in photovoltaic (PV) industry. The mc‐Si quality affects directly the conversion efficiency of solar cells, and thus, it is crucial to the cost of PV electricity. With the breakthrough of crystal growth technology, the so‐called high‐performance mc‐Si has increased about 1% in solar cell efficiency from 16.6% in 2011 to 17.6% in 2012 based on the whole ingot performance. In this paper, we report our development of this high‐performance mc‐Si. The key ideas behind this technology for defect control are discussed. With the high‐performance mc‐Si, we have achieved an average efficiency of near 17.8% and an open‐circuit voltage (V_oc) of 633 mV in production. The distribution of cell efficiency was rather narrow, and low‐efficiency cells (<17%) were also very few. The power of the 60‐cell module using the high‐efficiency cells could reach 261 W as well. Copyright © 2013 John Wiley & Sons, Ltd.     

Effect of carbon containing SiNx antireflection coating on the screen‐printed contact and low illumination performance of silicon solar cell

Screen‐printed metal contact formation through a carbon containing antireflection coating was investigated for silicon solar cells by fabricating conventional carbon‐free SiN_x and carbon‐rich SiC_xN_y film. An appreciable difference was found in the average shunt resistance (R_sh), which was about an order of magnitude higher for SiC_xN_y‐coated solar cells relative to the counterpart SiN_x‐coated solar cells. Series resistance (R_s) and fill factor (FF) were comparable for both antireflection coatings but the starting efficiency of SiC_xN_y‐coated cell was ~0·2% lower because of slightly inferior surface passivation. However, SiC_xN_y‐coated solar cells showed less degradation under lower illumination (<1000 W/m²) compared with the SiN_x‐coated cells due to reduced FF degradation under low illumination. Theoretical calculations in this paper support that this is a direct result of high R_sh. Detailed photovoltaic system and cost modeling is performed to quantify the enhanced energy production and the reduced levelized cost of electricity due to higher shunt resistance of the SiC_xN_y‐coated cells. It is shown that R_sh value below 30 Ω (7000 Ω cm² for 239 cm² cell) can lead to appreciable loss in energy production in regions of low solar insolation. Copyright © 2011 John Wiley & Sons, Ltd.     

High‐quality surface passivation of silicon solar cells in an industrial‐type inline plasma silicon nitride deposition system

We have studied the surface passivation of silicon by deposition of silicon nitride (SiN) in an industrial‐type inline plasma‐enhanced chemical vapor deposition (PECVD) reactor designed for the continuous coating of silicon solar cells with high throughput. An optimization study for the passivation of low‐resistivity p‐type silicon has been performed exploring the dependence of the film quality on key deposition parameters of the system. With the optimized films, excellent passivation properties have been obtained, both on undiffused p‐type silicon and on phosphorus‐diffused n⁺ emitters. Using a simple design, solar cells with conversion efficiencies above 20% have been fabricated to prove the efficacy of the inline PECVD SiN. The passivation properties of the films are on a par with those of high‐quality films prepared in small‐area laboratory PECVD reactors. Copyright © 2004 John Wiley & Sons, Ltd.     

Diffusion‐free high efficiency silicon solar cells

Traditional POCl₃ diffusion is performed in large diffusion furnaces heated to ~850 C and takes an hour long. This may be replaced by an implant and subsequent 90‐s rapid thermal annealing step (in a firing furnace) for the fabrication of p‐type passivated emitter rear contacted silicon solar cells. Implantation has long been deemed a technology too expensive for fabrication of silicon solar cells, but if coupled with innovative process flows as that which is mentioned in this paper, implantation has a fighting chance. An SiOx/SiN_y rear side passivated p‐type wafer is implanted at the front with phosphorus. The implantation creates an inactive amorphous layer and a region of silicon full of interstitials and vacancies. The front side is then passivated using a plasma‐enhanced chemical vapor deposited SiN_xH_y. The wafer is placed in a firing furnace to achieve dopant activation. The hydrogen‐rich silicon nitride releases hydrogen that is diffused into the Si, the defect rich amorphous front side is immediately passivated by the readily available hydrogen; all the while, the amorphous silicon recrystallizes and dopants become electrically active. It is shown in this paper that the combination of this particular process flow leads to an efficient Si solar cell. Cell results on 160‐µm thick, 148.25‐cm² Cz Si wafers with the use of the proposed traditional diffusion‐free process flow are up to 18.8% with a V_oc of 638 mV, J_sc of 38.5 mA/cm², and a fill factor of 76.6%. Copyright © 2012 John Wiley & Sons, Ltd.