GeSi/Si共振隧穿二极管

GeSi/Si共振隧穿二极管主要包括空穴型GeSi/SiRTD、应力型GeSi/SiRTD和GeSi/Si带间共振隧穿二极管三种结构。着重讨论了后两种GeSi/Si基RTD结构;指出GeSi/Si异质结的能带偏差主要发生在二者价带之间(即ΔEv>ΔEc),形成的电子势阱很浅,因此适用于空穴型RTD的研制;n型带内RTD只有通过应力Si或应力GeSi来实现,这种应力型RTD为带内RTD的主要结构;而带间GeSi/SiRITD则将成为更有应用前景的、性能较好的GeSi/SiRTD器件结构。     

RTD多值逻辑电路原理与电路模拟

由共振隧穿二极管(RTD)和高电子迁移率晶体管(HEMT)构成的多值逻辑(MVL)电路可以用最少的器件来完成一定的逻辑功能,达到大大简化电路的目的。共振隧穿二极管和高电子迁移率晶体管属于量子器件,具有高频高速的特点,所以这一逻辑电路有很好的应用前景。本文就多值逻辑电路中的几个典型电路用Pspice软件进行电路模拟,得到了与理论分析一致的模拟结果。     

基于共振隧穿二极管的阈值逻辑单元电路设计

共振隧穿二极管作为较为成熟的纳米电子器件,已被广泛应用于高速低功耗电路。由于其具有负内阻特性,单一门电路的功能大大增加,减少了电路的复杂度。在阈值逻辑函数的硬件实现方面,共振隧穿器件也体现出显著的优势。结合谱技术,基于共振隧穿二极管,设计了可实现任意三变量阈值逻辑函数的阈值逻辑单元电路。该电路还可作为阈值逻辑网络中的基本单元,实现复杂的逻辑功能。通过HSPICE软件,仿真验证了所设计电路的正确性。     

基于共振隧穿二极管的阈值逻辑单元电路设计

共振隧穿二极管作为较为成熟的纳米电子器件,已被广泛应用于高速低功耗电路。由于其具有负内阻特性,单一门电路的功能大大增加,减少了电路的复杂度。在阈值逻辑函数的硬件实现方面,共振隧穿器件也体现出显著的优势。结合谱技术,基于共振隧穿二极管,设计了可实现任意三变量阈值逻辑函数的阈值逻辑单元电路。该电路还可作为阈值逻辑网络中的基本单元,实现复杂的逻辑功能。通过HSPICE软件,仿真验证了所设计电路的正确性。     

RTD-HBT高速低功耗环形振荡器的分析

RTD与HBT是高频高速器件,共振隧穿二极管-异质结晶体管(RTD-HBT)环形振荡器有很好的应用前景.详细介绍了RTD-HBT高速低功耗环形振荡器的工作原理,建立了RTD,HBT及RTD-HBT环形振荡器的等效电路模型,并对RTD-HBT环形振荡器用Pspice模拟软件进行了电路模拟.模拟结果与预期结果一致,有助于指导该电路的设计.     

三稳态共振隧穿器件的研制

在I-V特性曲线上具有双微分负阻的三稳态共振隧穿器件,室温下可以达到较高的电流峰谷比5.2∶1。器件采用两个隧穿二极管背靠背串联的结构,能更大程度提高集成度,可以在多值逻辑或其他有关降低电路复杂性方面获得较为广泛的应用。     

共振隧穿二极管(RTD)的物理模型——共振隧穿器件讲座(3)

介绍了共振隧穿二极管物理模型的量子力学基础,重点讲解共振隧穿两种物理模型,从不同维度隧穿的特点分析共振隧穿和非共振隧穿的区别,为以后讨论分析共振隧穿器件的特性奠定基础。     

小偏压下阱中阱结构的量子隧穿特性及其实现

共振隧穿是电子的隧穿概率在某一个能量值附近以尖锐的峰值形式出现的隧穿,是目前为止最有希望应用到实际电路和系统的量子器件之一,其特点是器件的响应速度非常快。本文用传递矩阵的方法分别计算了在外加偏压下,对称双势垒、三势垒应变量子阱结构的透射系数与入射电子能量和隧穿电流与偏置电压的关系,模拟了应变多量子阱结构的隧穿系数和I-V特性曲线。计算得到隧穿电流峰值位置与实验测试值符合得很好,对于设计共振隧穿二极管并为进一步实验提供理论指导具有重要的意义。     

基于1-of-2共振隧穿数据选择器的可置位复位D触发器设计

文章以共振隧穿RT器件为主要器件,设计了上边沿触发的共振隧穿D触发器.该触发器以1-of-2共振隧穿数据选择器为核心电路,带预先置位和复位功能.此共振隧穿数据选择器电路的设计方法还能用于实现其他触发器电路,为采用基于RT器件设计触发器电路提供了一种新的并且有效简单的方法,弥补了共振隧穿电路中只能用MOBILE单元来设计时序电路的单一性,丰富了量子电路中触发器的类型.     

UTC-PD和RTD单片集成的器件模拟研究

单行载流子光电二极管与共振隧穿二极管单片集成器件是一种新型高速光电探测器,也是高速光电单稳双稳转换逻辑电路的一个基本单元。用Atlas软件对该集成电路单元进行了直流和交流特性的模拟研究,模拟得到的3dB带宽最高可达9THz。模拟发现,光照强度、吸收层厚度、掺杂浓度、收集层浓度是影响器件3dB带宽的主要因素。研究了器件材料参数、结构参数与器件3dB带宽之间的关系,并得到在现行工艺下优化后的单行载流子光电二极管和共振隧穿二极管单片集成器件的工艺参数,模拟出3dB带宽为1.03THz。同时,对器件模拟和半导体工艺间的误差进行了分析和估计。这一工作为单行载流子光电二极管和共振隧穿二极管单片集成器件的设计和研制提供了工艺参数基础。     

Pspice resonant tunneling diode models and application circuits

Using the analogue behavioural modelling capabilities of Pspice, the current–voltage characteristics and the large-signal equivalent circuit of a resonant tunneling diode are exploited to create a Pspice compatible model for the diode. The model is used, with very few other components, in the simulation of a number of circuit applications, including a sinusoidal wave generator, a frequency multiplier and three state logic circuits. The simulated circuit details, the related waveforms and three-state logic operations are described. The circuits are characterized mainly by their reduced complexity and ease of analysis.     

Complementary tunneling transistor for low power application

The metal oxide semiconductor field effect transistor (MOSFET) is scaling to a “tunneling epoch”, in which multiple leakage current induced by different tunneling effects exist. The complementary Si-based tunneling transistors are presented in this paper. The working principle of this device is investigated in detail. It is found that the band-to-band tunneling current is be controlled by the gate-to-source voltage. Due to the reverse biased p-i-n diode structure, an ultra-low leakage current is achieved. The sub-threshold swing of TFET is not limited by kt/q, which is the physical limit of the MOSFET. Using the CMOS compatible processes, the complementary TFETs (CTFET) are fabricated on one wafer. From a circuit point of view, the compatibility between TFET and MOSFET enables the transfer of CMOS circuits to CTFET circuits.     

共振隧穿二极管型光探测器和光调制器

将共振隧穿二极管(RTD)的核心结构——双势垒系统与光探测器和调制器的原理相结合可构成共振隧穿光探测器和共振隧穿光调制器。这些器件既保持了RTD高频、高速的特点,同时又具备了光探测器和光调制器原有的功能,可用于光电集成电路。介绍了这种具有代表性的RTD型光电器件的工作原理、器件结构、制造工艺、器件参数测试等,为此类器件在国内的设计和研制奠定基础。     

InP基谐振隧穿二极管的研究

谐振隧穿二极管(RTD)具有高频、低功耗、负阻、双稳态、自锁等优点,在超高速数字电路领域具有非常好的应用前景.加之InP材料固有的优越特性,使得InP基谐振隧穿器件成为目前研究的重点.研究并试制了InP基RTD实验样品,对其直流特性进行了测试分析,器件的最大电流峰谷比(PVCR)达到了17.8.     

Simulation of quantum transport in monolithic ICs based on In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As RTDs and HEMTs with a quantum hydrodynamic transport model

A new quantum hydrodynamic transport model based on a quantum fluid model is used for numerical calculations of different quantum sized devices. The simulation of monolithic integrated circuits of resonant tunneling structures and high electron mobility transistors (HEMT) based on In/sub 053/Ga/sub 0.47/As-In/sub 052/Al/sub 0.48/As-InP is demonstrated. With the new model, it is possible to describe quantum mechanical transport phenomena like resonant tunneling of carriers through potential barriers and particle accumulation in quantum wells. Different structure variations, especially the resonant tunneling diode area and the gate width of the HEMT structure, show variable modulations in the output characteristics of the monolithic integrated device.     

A vertical resonant tunneling transistor for application in digitallogic circuits

A vertical resonant tunneling transistor (VRTT) has been developed, its properties and its application in digital logic circuits based on the monostable-bistable transition logic element (MOBILE) principle are described. The device consists of a small mesa resonant tunneling diode (RTD) in the GaAs/AlAs material system surrounded by a Schottky gate. We obtain low peak voltages using InGaAs in the quantum well and the devices show an excellent peak current control by means of an applied gate voltage. A self latching inverter circuit has been fabricated using two VRTTs and the switching functionality was demonstrated at low frequencies     

平面型RTD及其MOBILE的设计与研制

鉴于已报道的平面共振遂穿二极管(PRTD)存在的缺点,文中提出了一种新的平面RTD器件结构.以n GaAs代替半绝缘GaAs衬底,利用硼离子注入产生的非晶化作为RTD器件的电隔离,成功设计研制平面型RTD和由其构成的单-双稳转换逻辑单元,此种结构可适用于以输出端作为公用端的所有电路.     

InAs/AlSb/GaSb resonant interband tunneling diodes andAu-on-InAs/AlSb-superlattice Schottky diodes for logic circuits

Integrated resonant interband tunneling (RIT) and Schottky diode structures, based on the InAs/GaSb/AlSb heterostructure system, are demonstrated for the first time. The RIT diodes are advantageous for logic circuits due to the relatively low bias voltages (~100 mV) required to attain peak current densities in the mid-10⁴ A/cm ² range. The use of n-type InAs/AlSb superlattices for the semiconducting side of Schottky barrier devices provides a means for tailoring the barrier height for a given circuit architecture. The monolithically integrated RIT/Schottky structure is suitable for fabrication of a complete diode logic family (AND, OR, XOR, INV)     

A GaN/InGaN/AlGaN MQW RTD for versatile MVL applications with improved logic stability

To improve the logic stability of conventional multi-valued logic (MVL) circuits designed with a GaN-based resonate tunneling diode (RTD),we proposed a GaN/InGaN/AlGaN multi-quantum well (MQW) RTD.The proposed RTD was simulated through solving the coupled Schrodinger and Poisson equations in the numerical non-equilibrium Green's function (NEGF) method on the TCAD platform.The proposed RTD was grown layer by layer in epitaxial technologies.Simulated results indicate that its current-voltage characteristic appears to have a wider total negative differential resistance region than those of conventional ones and an obvious hysteresis loop at room temperature.To increase the Al composite of AlGaN barrier layers properly results in increasing of both the total negative differential resistance region width and the hysteresis loop width,which is helpful to improve the logic stability of MVL circuits.Moreover,the complement resonate tunneling transistor pair consisted of the proposed RTDs or the proposed RTD and enhanced mode HEMT controlled RTD is capable of generating versatile MVL modes at different supply voltages less than 3.3 V,which is very attractive for implementing more complex MVL function digital integrated circuits and systems with less devices,super high speed linear or nonlinear ADC and voltage sensors with a built-in super high speed ADC function.     

基于Pspice的RTD等效模型及其应用电路研究

简要介绍了RTD(共振隧穿二极管)的微分负阻特性及其等效电路,通过对实际AlAs/InxGa1-xAs/GaAs双势垒共振隧穿结构I-V曲线拟合,得出RTD的Pspice等效电路模型参数。采用Pspice软件建立了RTD的等效电路模型,并对其微分负阻特性进行了仿真,仿真结果与测试结果基本吻合。利用所建立的模型,对RTD的基本应用电路:反相器、非门、与非门和或非门进行了仿真模拟。结果表明,该类电路能够正确实现其逻辑功能。最后,对基于RTD的振荡电路进行了仿真,仿真频率与实际测试频率处于同一数量级。由于实测电路寄生参数如串联电阻、电容等的影响,仿真结果与测试结果稍有出入。