有机衬底SnO2：Sb透明导电膜的研究

采用射频磁控溅射法在有机薄膜衬底上制备出SnO2∶Sb透明导电膜,并对薄膜的结构和光电特性以及制备参数对薄膜性能的影响进行了研究.制备的样品为多晶薄膜,并且保持了纯二氧化锡的金红石结构.SnO2∶Sb薄膜中Sb2O3的最佳掺杂比例为6%.适当调节制备参数,可以获得在可见光范围内平均透过率大于85%的有机衬底SnO2∶Sb透明导电薄膜,其电阻率～3.7×10-3Ω·cm,载流子浓度～1.55×1020cm-3,霍耳迁移率～13cm2·V-1·s-1.     

高导电性ZAO陶瓷靶材及薄膜的制备

用热等静压法烧结制备了高导电性ZAO(铝掺杂氧化锌)陶瓷靶材,并用直流磁控溅射法制备出ZAO透明导电薄膜。靶材的致密度达98.7%,电阻率为2.2?03·cm;制得薄膜的最低电阻率为9.3?04·cm,可见光平均透射率大于85%。浅析了靶材的组织结构及靶材的电学、力学性能和薄膜制备的主要实验参数对其光、电性能的影响。     

基底温度对直流磁控溅射ITO透明导电薄膜性能的影响

用直流磁控溅射法制备透明导电锡掺杂氧化铟(ITO)薄膜,靶材为ITO陶瓷靶,组分为m(In2O3):m(SnO2)=9:1.运用分光光度计,四探针测试仪研究了基底温度对薄膜透过率、电阻率的影响,并用X射线衍射(XRD)仪对薄膜进行结构分析.计算了晶面间距和晶粒尺寸,分析了薄膜的力学性质.实验结果表明,在实验设备条件下,直流磁控溅射ITO陶瓷靶制备ITO薄膜时,适当的基底温度(200℃)能在保证薄膜85%以上高可见光透过率下,获得最低的电阻率,即基底温度有个最佳值.薄膜的结晶度随着基底温度的提高而提高.     

有机衬底SnO2∶Sb透明导电膜的研究

采用射频磁控溅射法在有机薄膜衬底上制备出SnO2∶Sb透明导电膜,并对薄膜的结构和光电特性以及制备参数对薄膜性能的影响进行了研究.制备的样品为多晶薄膜,并且保持了纯二氧化锡的金红石结构.SnO2∶Sb薄膜中Sb2O3的最佳掺杂比例为6%.适当调节制备参数,可以获得在可见光范围内平均透过率大于85%的有机衬底SnO2∶Sb透明导电薄膜,其电阻率～3.7×10-3Ω·cm,载流子浓度～1.55×1020cm-3,霍耳迁移率～13cm2·V-1·s-1.     

氧化物半导体透明导电薄膜的最佳掺杂含量理论计算

以铝掺杂氧化锌 (Al- doped Zn O,简称 AZO)和锡掺杂氧化铟 (Sn- doped In2 O3,简称 ITO)薄膜为例 ,建立了一个氧化物半导体透明导电薄膜的最佳掺杂含量的理论表达式 ,定量计算的结果 AZO陶瓷靶材中铝含量的理论最佳值为 C≈ 2 .9894% (wt) ,ITO陶瓷靶材中锡含量的理论最佳值为 C≈ 10 .3114% (wt) ,与实验数据相符合 .该理论经适当的修改和解释后也适用于某些其他电子薄膜材料的最佳掺杂含量问题     

聚酰亚胺衬底掺Sb的SnO_2透明导电膜的制备

用射频磁控溅射法在聚酰亚胺衬底上制备出了相对透过率为80%左右、最小电阻率为3.710-3 W·cm、附着良好的SnO2∶Sb透明导电膜。 靶材中Sb2O3的最佳掺杂量为6%(质量分数),最佳溅射压强为1 Pa(90%Ar+10%O2)。制备的样品为多晶薄膜,并且保持了二氧化锡的金红石结构,具有明显的[110]的趋向。并讨论了薄膜的结构和光电特性随衬底温度的变化。     

氧化物半导体透明导电薄膜的最佳掺杂含量理论计算

以铝掺杂氧化锌(A1-doped ZnO,简称AZO)和锡掺杂氧化铟(Sn-dopedIn2O3,简称ITO)薄膜为例,建立了一个氧化物半导体透明导电薄膜的最佳掺杂含量的理论表达式,定量计算的结果AZO陶瓷靶材中铝含量的理论最佳值为C≈2.9894%(wt),ITO陶瓷靶材中锡含量的理论最佳值为C≈10.3114%(wt),与实验数据相符合.该理论经适当的修改和解释后也适用于某些其他电子薄膜材料的最佳掺杂含量问题.     

有机衬底SnO_2∶Sb透明导电膜的研究

采用射频磁控溅射法在有机薄膜衬底上制备出 Sn O2 ∶ Sb透明导电膜 ,并对薄膜的结构和光电特性以及制备参数对薄膜性能的影响进行了研究 .制备的样品为多晶薄膜 ,并且保持了纯二氧化锡的金红石结构 .Sn O2 ∶ Sb薄膜中 Sb2 O3的最佳掺杂比例为 6 % .适当调节制备参数 ,可以获得在可见光范围内平均透过率大于 85 %的有机衬底 Sn O2 ∶ Sb透明导电薄膜 ,其电阻率～ 3.7e- 3Ω· cm ,载流子浓度～ 1.5 5e2 0 cm- 3,霍耳迁移率～ 13cm2 /( V · s )     

二氧化锡覆盖层对ITO透明导电薄膜热稳定性的改良

采用射频磁控溅射法在ITO玻璃表面沉积了一层15 nm左右的SnO2薄膜。利用霍尔效应测试仪、四探针电阻测试仪、场发射电子显微镜及紫外–可见–近红外光谱仪分析了所制薄膜的电学性质、表面形貌和光学性质。结果表明,在300~600℃退火后镀有SnO2覆盖层的ITO(SnO2/ITO)薄膜具有相对好的热学稳定性。在600℃退火后,ITO薄膜的方阻和电阻率分别为88.3Ω/□和2.5×10–3.cm,而此时,SnO2/ITO薄膜的方阻和电阻率仅为43.8Ω/□和1.2×10–3Ω.cm。最后,阐述了SnO2覆盖层提高ITO薄膜热稳定性的机制。     

中频脉冲磁控溅射制备ZnO:Al透明导电薄膜

采用中频磁控溅射工艺,以2%的Al掺杂的Zn(纯度99.99%)金属材料为靶材制备平面及绒面透明导电ZnO:Al(ZAO)薄膜,系统研究了衬底温度、工作气压和溅射功率等对平面ZAO结构和光电特性的影响,并对湿法腐蚀制备绒面ZAO薄膜进行了介绍。获得了适合太阳电池的高性能薄膜,其电阻率为4.6×10-4Ω·cm,载流子浓度为4.9×1020cm-3,霍尔迁移率为56cm2/V·s,可见光范围内(400~800nm)的平均透过率大于85%。     

SA011瓦斯报警器集成电路的设计原理

本文介绍了一种用于矿井作业中瓦斯报警器集成电路的电路设计原理。着重阐述了电路设计过程中的设计思想、设计要点及计算方法，并给出了产品研制结果。采用该产品制作的报警器具有外围简单、使用方便、性能稳定、体积小、重量轻等特点。该产品可扩展应用于监控温度、压力、声光等仪表中。     

GPS信标机系统的设计与实现

介绍一种利用GPS定位,实现对目标无线定位任务的GPS信标机系统。采用在待测目标上放置信号发送装置,在地面或者其他位置放置信号接收装置,接收装置接收发送装置发送的定位信息,实现定位的目的。经实验得出,信号发送装置的定位信息:经度111°44.72018',纬度39°04.18254',海拔高度1 412 m;信号接收装置的定位信息:经度111°44.73089',纬度39°04.16502',海拔高度1 333 m。结果表明,能准确定位待测目标和接收装置的定位信息(包括时间、经度、纬度和海拔高度等),是一种很好的无线定位信标机系统。     

Finite elements modeling of multilayers of Cr/CrN

One of the most used methods for modeling different materials and their properties has been finite elements. In this work, mechanical properties of Cr/CrN multilayer coatings have been modeled by using finite elements, varying the period of layers (1, 5, 10 and 20 bilayers) and the thickness of the films between 0.5 and , in order to determine the behavior of the system. For this model, the software ANSYS was used to carry out simulation of the indentation process. For the analysis, a conical Berkovich indenter was built. The simulation consists in generating the stress-strain curves in the charge mode for obtaining Young's modulus of the total system, including the substrate, which is made by stainless steel 304. The curves showed a tendency of increasing of Young's modulus as a function of number of layers and thickness, which means an increasing in hardness.     

喷气式发动机旋转叶片对电磁波的调制效应分析

喷气式飞机的Ｊ．Ｅ．Ｍ效应对飞机机身散射的用有信号是个大的干扰。本文首先分析研究发动机旋转叶片在其进气道内形成的实际孔径的财期性变化规律，然后用等效波导模型，采用模型匹配法分析皮导中旋转叶片对Ｙ极化传输电磁小波的调制效应，这种调制效应是用旋转叶片对波导模的反射系数的变化规律来表示的。     

建筑物内电磁波传播的计算问题

本文用时域有限差分(FD-TD)法研究了建筑物内电磁波传播的计算问题.首先把计算结果与联合有限元法和边界元法的结果进行了对比,而后计算了不同频率电磁波从不同方向入射时建筑物内电磁场分布的特点.并计算了线源辐射的电磁波在建筑物内的传播及向外辐射的特性以及脉冲电磁波在建筑物内传播和反射的特点.     

Thermoelectric figure of merit of LSCoO-Mn perovskites

Oxide ceramics with nominal composition of were grown by using the citrate sol-gel method followed by high temperature sintering. The thermoelectric properties were studied in the temperature range between 100 and 290 K. The magnitude of Seebeck coefficient S(T) and electrical resistivity ρ(T) increases with the manganese doping level, reaching maximum values close to and , respectively. On the contrary, the total thermal conductivity κ(T) decreases with the manganese content. The behavior of S(T) and ρ(T) was interpreted in terms of small-pollaron hopping mechanism. From S(T), ρ(T) and κ(T) data it was possible to calculate the dimensionless thermoelectric figure of merit ZT, which reaches maximum values close to 0.12; the structural and morphological properties of the samples were studied by powder X-ray diffraction analysis and scanning microscopy (SEM), respectively.     

A study of the rectifying behaviour of aniline green-based Schottky diode

An Al/aniline green (AG)/Ga₂Te₃ device was fabricated and the current-voltage (I-V), capacitance-voltage (C-V) and capacitance-frequency (C-f) characteristics of the device have been investigated at room temperature. The values of the ideality factor, series resistance and barrier height obtained from Cheung and Norde methods were compared, and it was seen that there was an agreement with each other. It was seen that the forward bias current-voltage characteristics at sufficiently large voltages has shown the effect of the series resistance. In addition, it was seen from the C-f characteristics that the values of capacitance have been decreased towards to the high frequencies. The higher values of capacitance at low frequencies were attributed to the excess capacitance resulting from the interface states in equilibrium with the Ga₂Te₃ that can follow the ac signal.     

No.7信令系统TFP消息的有关问题

禁止传递消息（ＴＦＰ）是Ｎｏ．７信令系统路由管理功能中一个非常重要的消息。本文就ＴＦＰ的深入理解以及ＴＦＰ的局限性作了深入的讨论，并对完善ＴＦＰ的响应方法提出建议。     

Electrical passivation of the silicon surface by organic monolayers of 1-octadecene

The electrical properties of structures consisting of a monolayer of 1-octadecene deposited on the Si surface are investigated depending on the method of passivation of the surface prior to the deposition of the film (hydrogen and ion passivation) and the intensity of illumination which activates the addition reaction of molecules of 1-octadecene to the Si atoms. The monolayer of 1-octadecene on the Si surface is stable and provides the chemical passivation of the surface. Two types of traps are found, namely, traps for holes and electrons, whose density can be varied during deposition of the monolayer by the choice of intensity of illumination and by the method of passivation of the surface. In the case of a low level of illumination and/or the use of the iodine passivation of the surface, the electron traps prevail, and, in the case of high intensity of illumination and/or hydrogen passivation of the surface, the hole traps prevail. It is shown that the use of these films provides conductivity in thin near-surface layers of Si due to providing the mode of flat bands or accumulation of carriers near the surface.     

Effect of carrier gas on the surface morphology of V-doped GaN layers

Vanadium-doped GaN (GaN:V) have been elaborated by metalorganic chemical vapour deposition (MOCVD). We have used vanadium tetrachloride (VCl₄) to intentionally incorporate vanadium (V) during the crystal growth of GaN. The films were grown on sapphire substrate with tow procedures. A series of layers were elaborated under nitrogen (N₂) and another under hydrogen (H₂). For the growth of GaN:V in hydrogen atmospheric, we have used the SiN treatment consisting of an exposure of sapphire substrate to a mixture of ammonia (NH₃) and silane (SiH₄). In-situ laser reflectometry analysis show that the surface morphology of layers depends on VCl₄ flow rate and the growth conditions. The experiments show that the quality of the grown layers (as measured with X-ray diffractometer (XRD), scanning electron microscopy (SEM) and photoluminescence (PL) increases under N₂.