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1.
CPT(彩色显像管)的发光效率一般5-7Lm/w,而彩色PDP(等离子显示板)的发光效率为1Lm/wFL的发光效率为80-100Lm/w,本文重点说明了三者发光效率差异的原因,并提出了提高PDP发光效率到5Lm/w的途径和方法。  相似文献   

2.
ACPDP驱动波形的研究   总被引:1,自引:0,他引:1  
从交流等离子体显示器件(ACPDP)的容性结构入手,研究了ACPDP的各种驱动波形及不同的驱动波形对ACPDP的寿命,发光效率,发光像元间的相互作用等影响,提出了一种最佳的ACPDP驱动波形。  相似文献   

3.
等离子体显示器亮度和光效改进方法   总被引:1,自引:1,他引:0  
本文阐述了提高等离子体显示器(PDP)发光亮度和效率的重要性,并就影响大屏幕等离子体显示器发光亮度和效率的因素进行了分析,对显示器亮度和光效的改进方法进行了分类,并对发光亮度和效率改进方面的现状、进展及存在的问题进行了概括和总结。  相似文献   

4.
彩色PDP中几种工作气体和荧光粉对提高发光效率的作用   总被引:3,自引:0,他引:3  
彩色PDP的发光效率在很大程度上与工作气体和荧光粉有关。本文比较了三种系列潘宁气体的真空紫外辐射性能和七种真空紫外荧光粉的激发和发射性能,择其应用于ACPDP。测试表明,当气体以合理配比和充气压放电产生的共振辐射线与三基色荧光粉激发和发射性能匹配时,可获得高的发光效率。文中还根据发光效率公式提出对研制荧光粉的要求。  相似文献   

5.
本文从交流等离子体显示器件(ACPDP)的容性结构入手,研究了各种交流等离子体显示器件的结构以及如何提高显示器件的寿命、发光亮度和发光效率,减小发光象元之间的相互影响、减小光串扰、减小驱动电流,并提供了设计交流等离子体显示器件的参考方法。  相似文献   

6.
彩色等离子体显示器用荧光粉   总被引:6,自引:1,他引:5  
本文阐述了荧光粉的发光特性对彩色等离子体显示器(PDP)性能影响。介绍了荧光粉激发光谱和相对发光效率的测试方法,并对常用真空紫外荧光粉的发光特性进行了比较。最后分析说明了荧光粉的涂覆面积、厚度、颗粒度大小等因素对PDP亮度和光效的影响。  相似文献   

7.
AC-PDP发光物理过程及影响发光效率、亮度因素的探讨   总被引:1,自引:1,他引:0  
分析了彩电AC-PDP平面显示结构原理,着重讨论了其物理发光过程,并提出进一步提高AC-PDP发光效率和亮度的途径。  相似文献   

8.
LPPP异质结构薄膜发光器性能增强的研究   总被引:2,自引:0,他引:2  
研究了以空穴型梯型聚次苯基(LPPP)和电子型八羟基喹啉铝(Alq3)组成的光发射器发射效率提高的方法,发光器的结构为Au/LPPP/Alq3/Al,测试结果表明这种发光器微腔调谐效应显著,净发射效率得到提高。  相似文献   

9.
为尽可能反映荧光粉在实际工作条件下的发光性质,准确测量荧光粉的发光性能,提出了一种基于积分球的荧光粉发光性能测试系统。该系统采用蓝光LED作为激发光源,配置有TEC控温系统对光源有效实施控温,可提供持续稳定的激发荧光粉发光。采用出光筒控制光源方向和积分球收集光线,能有效防止能量损失,提高测试的精确性。通过实验得到了不同强度蓝光激发下的荧光粉光谱功率分布以及发光效能、量子效率、光转换效率等参数的变化规律。随着驱动电流的增大,由于蓝光芯片内量子限制斯塔克效应,从而导致蓝光峰值波长出现小幅度的蓝移。三种效率在小电流下基本呈线性下降趋势,且在大电流下趋于平缓。实验结果表明,该系统及方法可以有效地评价实际LED芯片工作状态下的荧光粉发光性能。  相似文献   

10.
交流等离子体显示板(简称ACPDP)的显示像元的放电是通过气体作为耦合介质,电极间是通过电介质作为耦合介质的,因而属于容性结构,放电较为复杂。理论上描述电流和器件特性较为困难,国外曾经从实验中作过某些定性的讨论。本文从理论上分析了ACPDP放电气体与介质、介质与发光像元间的相互作用及发光容量不同时发光像元之间的影响以及所产生的辉光扩展,成功地解释了实验现象。  相似文献   

11.
The Au-Ni-Sn ternary intermetallic layer redeposition at the interface between the solder and the Au/Ni/Cu under-bump metallurgy (UBM) was measured experimentally and analyzed theoretically. The predicted thicknesses of the layer, assuming Au diffusion in the Sn-3.5Ag solder matrix, were thicker than those measured experimentally. The thicknesses predicted in the Sn-37Pb solder matrix, on the other hand, were thinner than those measured experimentally. The discrepancies between the predicted and measured thicknesses were discussed based on findings, such as formation of the ternary phase and presence of AuSn4 depletion zones in the solder matrices, and the stoichiometry of the ternary phase.  相似文献   

12.
层状结构铁电薄膜中频率对界面电位降的影响   总被引:4,自引:3,他引:1  
利用准分子激光原位沉积方法制备了层状结构铁电薄膜,借助HP4192A低频率阻抗分析仪对样品的C-V特性进行了测试,对同一频率下不同结构的铁电薄膜的界面电压降及不同频率下同一结构的铁电薄膜的界面电压降进行计算。结果表明,在同一频率下不同结构的铁电薄膜其界面电压降不同,同一结构的多层铁电薄膜在不同频度下其界面电压降也不同。不同的耗尽层厚度导致了界面电压降的不同。  相似文献   

13.
A dual-gate MESFET from NEC (NE25000) has been measured and modeled. S-parameters and drain-to-source currents calculated from the model are in good agreement with measured data. The model consists of a cascode of two intrinsic, single-gate, nonlinear FET-models embedded in a network representing the device parasitics. A step-by-step procedure has been used to determine the 47 parameters of the model. DC-measurements were used to find starting values for some of the parameters of the nonlinear models. The parasitic capacitances were determined from three-port S-parameters measured at VDS=0 V, IDS=0 A and V(G1S)=V(G2S)=-4.0V. The parasitic inductances and resistances were determined from S-parameters measured at the same bias-point but with forward-biased gates, and from DC-measurements. The final model-optimization was done by simultaneously fitting the model to drain-to-source currents and three-port S-parameters measured at several different, active bias-points (VDS >0)  相似文献   

14.
This paper presents a series of measurements of the radiated emissions from 8 and 16 bit microprocessors. The radiated emissions were measured using a 1-GHz TEM cell that incorporates the device under test (DUT) into the cell structure itself. For the 16 bit processor, samples from each of the manufacturer's identified process corners were measured and compared. Two separate fabrication lines were compared for process variability. The spatial location on the wafer was measured for emissions variation. In addition, emissions were measured for a 16 bit processor as a function of the operating temperature. Finally a comparison was made between discrete implementations of a module digital core and the same circuit implemented as an multichip module (MCM)  相似文献   

15.
闫国进 《红外技术》2008,30(1):51-53
使用铁氧体生料和堇青石生料,在合适的工艺制度下,制备了堇青石红外辐射复相陶瓷.用红外辐射测量仪测定了样品的红外发射率,用XRD方法分析了样品的物相组成,用电子探针分析了样品中元素的面分布和其显微结构特征,并综合分析了影响制品红外发射率的因素,结果表明:复相陶瓷的主晶相为堇青石和铁氧体共存,和复合前铁氧体的发射率值相比,复合体陶瓷的全波段红外发射率和光谱发射率均得到了一定程度的提高,全波段红外发射率提高了4%-5%,光谱发射率提高了l%-5%;复相陶瓷中,铁氧体含量的变化,对复相陶瓷的红外发射率没有影响.  相似文献   

16.
对10GHz DFB激光器参数的数值模拟及实验   总被引:2,自引:1,他引:1  
对激光器速率方程所涉及的激光器的内部参数进行变换,得到一组新参数。它们可由实验中测得的激光器的数据通过曲线拟合的方法得到。利用拟合得到的参数对10GHz的分布反馈(DFB)半导体激光器(LD)进行数值求解,所得的结果和实验测量的结果相吻合。  相似文献   

17.
报道了于 1997年 3月和 5月在安徽光机所进行的低层大气后向散射特性参数测量 ,获得了对 532nm光的低层大气后向散射特性参数数据 ,并对测量结果进行了分析。  相似文献   

18.
为了对小尺寸抛物面反射镜进行质量检测, 采用平行光聚焦的方法测量焦距, 旋转被测反射镜的方法测量偏心角, 再结合图像处理的方法测量弥散斑大小, 并提出了一种减小测量误差的方法; 对这些测量方法进行了理论分析和实验验证, 得到了待测反射镜的焦距、偏心角和弥散斑大小。结果表明, 焦距的相对误差在0.1%以内, 偏心角误差在7%以内, 弥散斑大小小于0.2mm, 测量结果可靠。该方案设计为其它小口径的非球面的检测提供了很好的思路, 并且为减小测量误差、提高测量精度提供了很好的研究方法。  相似文献   

19.
提出油田井下岩芯表面瑞利波的激光全息测试方法,给出了测量结果并进行了分析和讨论。  相似文献   

20.
Polarimetric radar cross sections (RCSs) were measured for two large Bruderhedrals at 35 and 93 GHz. The overall spread in the measured RCS was 2 dB. It was found that the absolute RCS as well as the dependence of the RCS on elevation angle could be significantly altered by a slight misalignment of the Bruderhedral. The calculations of these RCSs by theories for a top hat and RCS simulation codes based on geometric and physical optics (PO) generally agreed with the measurements to within 3 db. Radar calibrations using these Bruderhedrals that are based on the predictions are not reliable, however, if accuracies better than 3 dB are required, The measured values of the cross-polarization RCS were very small compared to the copolarization ones, consistent with the codes and theoretical considerations  相似文献   

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