In2O3：Sn和ZnO：Al透明导电薄膜的结构及其导电机制

基于对锡掺杂三氧化铟(Sn-doped In2O3,简称ITO)和铝掺杂氧化锌(Al-doped ZnO,简称ZAO)薄膜退火前后XRD数据的分析,研究了薄膜晶格常数畸变的原因,同时讨论了ITO和ZAO薄膜的导电机制.结果表明,低温沉积ITO薄膜的晶格膨胀来源于Sn2+对In3-的替换,导电电子则由氧缺位提供;高温在位制备和退火处理后薄膜的晶格收缩来源于Sn4+对In3+的替换,导电电子则主要由Sn4+取代In3+后提供.低温ZAO薄膜的晶格畸变来源于薄膜中的残余应力,导电电子的来源则同高温在位和退火处理后的薄膜一致,即由Al3+对Zn2+的替换和氧缺位两者共同提供     

In_2O_3∶Sn和ZnO∶Al透明导电薄膜的结构及其导电机制

基于对锡掺杂三氧化铟 ( Sn- doped In2 O3,简称 ITO)和铝掺杂氧化锌 ( Al- doped Zn O,简称 ZAO)薄膜退火前后 XRD数据的分析 ,研究了薄膜晶格常数畸变的原因 ,同时讨论了 ITO和ZAO薄膜的导电机制 .结果表明 ,低温沉积 ITO薄膜的晶格膨胀来源于 Sn2 +对 In3-的替换 ,导电电子则由氧缺位提供 ;高温在位制备和退火处理后薄膜的晶格收缩来源于 Sn4 + 对 In3+ 的替换 ,导电电子则主要由 Sn4 + 取代 In3+ 后提供 .低温 ZAO薄膜的晶格畸变来源于薄膜中的残余应力 ,导电电子的来源则同高温在位和退火处理后的薄膜一致 ,即由 Al3+ 对 Zn2 + 的替换和氧缺位两者     

离子注入对二氧化锡薄膜的改性作用

对溅射沉积制成的氧化锡薄膜进行了钨离子注入、氧离子注入和退火处理，并用X射线衍射(XRD)和x射线光电子能谱(XPS)分析了薄膜，研究了注入对薄膜相变的影响。发现在室温下溅射沉积形成的非晶态SnO2薄膜，注入氧离子后导致了非晶态SnO2向晶态SnO2的转变；注入钨离子则导致了SnO在非晶态薄膜中的形成。而在已经注入了钨离子的薄膜中再注入氧离子可以形成Sn3O4。实验表明，注入钨离子可减少由氧和锡组成相的氧、锡比率，而注入氧离子则可增加这种比率。     

高剂量低能氧离子注入硅形成SiO_2薄膜的研究

本文用AES、XPS、IRS、椭偏仪和Ⅰ-Ⅴ特性测量,研究了高剂量低能氧离子注入Si中合成表面SiO_2薄膜的条件及其耐压和耐腐蚀等性能.另外,还用TEM和C-V测量研究了SiO_2薄膜下单晶硅的质量以及Si/SiO_2系统的界面特性.结果表明,在适当的注入和退火条件下,可以合成比较均匀的表面SiO_2薄膜而且其电学性能已接近热生长SiO_2的水平.在Si/SiO_2界面处注入H_2~+离子可以改善其界面特性.     

ITO透明导电薄膜的制备工艺研究

采用溶胶-凝胶法以InCl3·4H2O和SnCl4·5H2O为前驱物在玻璃基片上制备了ITO透明导电薄膜.详细研究了热处理初始温度、溶胶浓度、热处理温度、热处理时间、铟锡比例以及镀膜层数对薄膜光电特性的影响,得出了最佳工艺条件.结果表明,采用最佳工艺制备的ITO透明导电薄膜为体心立方的In2O3结构,Sn4 离子取代In2O3晶格中的In3 离子,样品不含低价氧化锡,薄膜方阻达到600 Ω/□,可见光透过率达到83%.     

半绝缘GaAs中Mg~++P~+双注入研究

本文对Mg~+和P~+双离子注入半绝缘GaAs的行为进行了研究.发现不论是常规热退火还是快速热退火,共P~+注入都能有效地提高注入Mg杂质的电激活率,其效果优于共As~+注入,共P~+注入的最佳条件是其剂量与Mg~+离子剂量相同,电化学C—V测量表明,双注入样品中空穴分布与理论计算值接近,而单注入样品中则发生严重偏离,快速热退火较常规热退火更有利于消除注入损伤.     

V_2O_5/V/V_2O_5薄膜退火条件对其的制备及特性的影响

利用间歇通O2的方式,采用射频磁控溅射法在Si3N4衬底上制备V2O5/V/V2O5复合薄膜,研究了不同原位退火条件对薄膜阻值及电阻温度系数(TCR)的影响。结果表明,经过退火处理后的V2O5/V/V2O5复合薄膜方阻值大大降低,电阻-温度曲线呈现良好的线性特性,并具有高TCR值及优良的电学稳定性。利用X射线光电子能谱(XPS)对退火后的V2O5/V/V2O5复合薄膜表面进行V、O元素分析,结果表明,V2O5/V/V2O5复合薄膜各层间的扩散效果显著影响薄膜表面不同价态V离子的含量,低价V离子会随着退火温度的升高及退火时间的延长而增多,薄膜表面对水分子的吸附也随之变强。在实验结果的基础上,利用扩散理论阐述了退火条件对V2O5/V/V2O5复合薄膜电学性能影响的机理。     

离子注入双极硅ECL集成电路

本文简要叙述用离子注入法制造双极硅ECL集成电路的实验结果。电阻器和晶体管基区的掺杂由注入硼来实现,发射区的掺杂则靠注入磷来完成。样品电路的门平均延时的典型值为2ns。文中着重介绍了注入离子能量、剂量、退火温度及时间对电路元件电学性能的影响。     

高剂量离子注入直接形成Ge纳米晶的物理机理

研究了单束双能高剂量Ge离子注入、不经过退火在非晶态SiO2薄膜中直接形成镶嵌结构Ge纳米晶的物理机制.实验中利用不加磁分析器的离子注入机,采用Ge弧光放电离化自动形成的Ge+和Ge2+双电荷离子并存的单束双能离子注入方法,制备了1016～1018cm-2多种剂量Ge离子注入的Si基SiO2薄膜样品.用GIXRD表征了Ge纳米晶的存在,并仔细分析得到了纳米晶形成的阈值剂量.通过TEM分析了Ge纳米晶的深度分布和晶粒尺寸.用SRIM程序分别计算了双能离子在SiO2非晶层的射程和深度分布,与实验结合,得到纳米晶形成的物理机制,即纳米晶的形成与单束双能离子注入时Ge+和Ge2+相互碰撞产生的能量沉积在SiO2中形成的局域高温有关.     

C+注入a-SiNx:H的原子化学键合的研究

常温下对低压化学气相沉积制备的纳米硅镶嵌结构的a-SiNx∶H薄膜进行C+注入,能量为30kev,剂量为2×1017 cm-2.对C+注入的SiNx薄膜在800℃的温度下,进行2h的常规炉退火处理.通过XPS,AES的测量得到,经800℃高温退火处理后的薄膜形成了部分SiCxNy结构.用喇曼、XPS等分析手段对薄膜结构及成分进行了测量与分析,得到不同退火温度对离子注入形成SiCN薄膜结构与成分的影响,认为高温退火后薄膜中硅含量与SiCxNy薄膜的形成有重要的关系.     

Fe~＋和H~＋注入引起的Si／SiO_2界面重构现象

针对Ｓｉ－ＳｉＯ２过渡区对于离子注入较为敏感的特点，用１．２ＭｅＶ，剂量１×１０１０ｃｍ－２的Ｆｅ＋和Ｈ＋先后注入ＳｉＯ２－Ｓｉ样品，并用ＸＰＳ技术重点分析了Ｓｉ－ＳｉＯ２界面附近硅的化学结构、组分的变化。结果表明，在界面附近，除了Ｓｉ４＋，Ｓｉ０价态，还存在明显的Ｓｉ２＋价态。这和注入Ｈ＋产生的高温退火以及Ｓｉ—Ｓｉ键或Ｓｉ—Ｈ键的形成有关。     

Implant Compositional Disordering on InGaAs／InP MQW Structures

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Optimisation of implantation conditions for the formation of buried SiO2 layers in silicon

The substrate temperature dependence of the IR transmission spectra of buried silicon dioxide layers formed by high dose ion implantation (~1017) was investigated for an ion dose ranging from 1017 to 1018 ions/cm2 at 250°C of 16O+ at 100 keV energy. The IR spectra indicate that the silicon/silicon-dioxide/silicon can be obtained after thermal annealing treatment of the implanted sample for 10 mm in hydrogen ambient at 1100°C.     

The effect of boron,oxygen, and fluorine in ion implanted GaAs

Effects of boron, fluorine, and oxygen in GaAs have been investigated by electrical characterization using current-voltage, capacitance-voltage and deep level transient spectroscopy techniques. Ion implantation at 100 keV energy was conducted with doses of 10¹¹ and 10¹²/cm². Carrier compensation was observed in each implanted sample. The compensation effect strongly depended on ion implantation condition and ion species. More free carriers were compensated for higher dose and heavier species; however, severe surface damage would also be induced that degrade electrical performance. Rapid thermal annealing treatment showed the heavier ion implanted samples to be more thermally stable. Defect levels for each implanted species were compared and identified. A native shallow defect E4 was easily removed by ion implantation. In higher dose and heavier ion implantation, both electron and hole traps were induced. However, in some cases, heavier ion implantation also removed native defects. Acceptor-type surface states were created by implantation that degrade material electrical characteristics and also reduce the effect of compensation. The damage induced traps were mostly point-defects or point-defect/impurity complexes as evidenced by sensitivity to heat treatment.     

Optimum flash lamp annealing conditions for fabrication of low dose ion-implanted Si solar cells

A method to fabricate silicon solar cells was developed around low dose (nonamorphized) ion implantation and Xe flash lamp annealing under assist heating (350-550°C). Solar cells fabricated by low dose¹¹B+ (p+/n-type cell) and³¹p+ (n+/p-type cell) implantation and flash lamp annealing showing a high efficiency of about 10.4 percent (AM2) without AR coating and BSF structures. The results were compared with those of high dose implanted cells reported by us previously (in this transaction). Effects of assist heating temperature were also examined.     

Structure and optical properties of ZnO with silver nanoparticles

Textured nanocrystalline ZnO thin films are synthesized by ion beam assisted deposition. According to X-ray diffraction data, the crystallite size is ~25 nm. Thin (~15 nm) ZnO layers containing Ag nanoparticles are formed in a thin surface region of the films by the implantation of Ag ions with an energy of 30 keV and a dose in the range (0.25–1) × 10¹⁷ ion/cm². The structure and optical properties of the layers are studied. Histograms of the size distribution of Ag nanoparticles are obtained. The average size of the Ag nanoparticles varies from 0.5 to 1.5–2 nm depending on the Ag-ion implantation dose. The optical transmittance of the samples in the visible and ultraviolet regions increases, as the implantation dose is increased. The spectra of the absorption coefficient of the implanted films are calculated in the context of the (absorbing film)/(transparent substrate) model. It is found that the main changes in the optical-density spectra occur in the region of ~380 nm, in which the major contribution to absorption is made by Ag nanoparticles smaller than 0.75 nm in diameter. In this spectral region, absorption gradually decreases, as the Ag-ion irradiation dose is increased. This is attributed to an increase in the average size of the Ag nanoparticles. It is established that the broad surface-plasmon-resonance absorption bands typical of nanocomposite ZnO films with Ag nanoparticles synthesized by ion implantation are defined by the fact that the size of the nanoparticles formed does not exceed 1.5–2 nm.     

高能离子注入硅的无损表征

将能量为3MeV,剂量为51015cm-2的硼离子注入(100)硅单晶,经1050℃,20s退火形成导电埋层。本文应用X-射线双晶衍射分析高能离子注入硅的损伤演变。通过分析高能离子注入体系和自由载流子等离子体效应的光学响应,应用计算机模拟红外反射谱,获得了载流子分布,迁移率和高能注入离子的电激活率。     

XAFS Investigation of Nanoparticle Formation in 64Zn+ Ion Implanted and Thermo Oxidized Quartz

Semiconductors - The silica glass substrates were implanted by 64Zn+ ions with dose of 5 × 1016 cm−2 and energy of 50 keV. During implantation the ion beam current density was less than...     

砷化镓注锡的红宝石脉冲激光退火

一、引言 半导体经离子注入后,需经热退火使注入过程引起的晶格损伤得到恢复,同时使注入杂质活化,才能获得良好的电特性。但是热退火有许多的局限性,如高剂量注入所产生的晶格损伤得不到充分恢复,衬底材料的少子寿命与扩散长度会严重下降,对化学稳定性较差的化合物半导体,还会引起分解与     

Sensitivity analysis of ion implanted silicon wafers after rapid thermal annealing

In this study, we have investigated sensitivities of the ion implanted silicon wafers processed by rapid thermal annealing (RTA), which can reveal the variation of sheet resistance as a function of annealing temperature as well as implantation parameters. All the wafers were sequentially implanted by the arsenic or phosphorous implantations at 40, 80, and 100 keV with the dose level of 10¹⁴ to 2 × 10¹⁶ ions/cm². Rapid thermal annealing was carried out for 10 s by the infrared irradiation at a temperature between 850 and 1150°C in the nitrogen ambient. The activated wafer was characterized by the measurements of the sheet resistance and its uniformity mapping. The values of sensitivities are determined from the curve fitting of the experimental data to the fitting equation of correlation between the sheet resistance and process variables. From the sensitivity values and the deviation of sheet resistance, the optimum process conditions minimizing the effects of straggle in process parameters are obtained. As a result, a strong dependence of the sensitivity on the process variables, especially annealing temperatures and dose levels is also found. From the sensitivity analysis of the 10 s RTA process, the optimum values for the implant dose and annealing temperature are found to be in the range of 10¹⁶ ions/cm² and 1050-1100°C, respectively. The sensitivity analysis of sheet resistance will provide valuable data for accurate activation process, offering a guideline for dose monitoring and calibration of ion implantation process.