超声雾化喷涂工艺及优质二氧化锡透明导电薄膜的研究

报道了采用超声雾化喷涂工艺沉积优质掺杂二氧化锡透明导电半导体薄膜的实验成果 ,选用氟作为掺杂元素 ,通过改变掺杂量和工艺参数 ,可控制薄膜的方块电阻在 1 0 Ω/□以上的范围内变化 (40 0 nm膜厚 ) ,掺氟离子二氧化锡为 n型导电半导体 ,高浓度掺杂的二氧化锡薄膜光学透过率为 87%～ 90 % (采用 550 nm单色光源测透过率 )。用 X射线衍射及扫描电子显微镜分析 ,可获得该薄膜材料的微结构、表面形貌以及薄膜组成、掺杂百分含量。该成果为大规模生产优质二氧化锡透明导电薄膜 ,提供了有效、简单的方法和装置。     

透明导电薄膜最佳掺杂含量的理论计算

分析了几种氧化物半导体透明导电薄膜材料的掺杂改性的实验结果,建立了薄膜材料的某一物理性能与晶体结构、制备方法和掺杂剂含量之间的联系,并给出了一个能够拟合实验曲线的抛物线方程.该方程的极值点确定了最佳掺杂含量与晶体结构和制备方法之间的定量关系,进而导出了一个最佳掺杂含量表达式.应用此表达式定量计算了铝掺杂氧化锌薄膜、锡掺杂氧化铟薄膜、锑掺杂二氧化锡薄膜等氧化物半导体透明导电薄膜材料最佳掺杂剂在不同制备方法下的最佳掺杂量.结果表明定量计算的结果与部分实验数据相符合.     

透明导电薄膜最佳掺杂含量的理论计算

分析了几种氧化物半导体透明导电薄膜材料的掺杂改性的实验结果,建立了薄膜材料的某一物理性能与晶体结构、制备方法和掺杂剂含量之间的联系,并给出了一个能够拟合实验曲线的抛物线方程.该方程的极值点确定了最佳掺杂含量与晶体结构和制备方法之间的定量关系,进而导出了一个最佳掺杂含量表达式.应用此表达式定量计算了铝掺杂氧化锌薄膜、锡掺杂氧化铟薄膜、锑掺杂二氧化锡薄膜等氧化物半导体透明导电薄膜材料最佳掺杂剂在不同制备方法下的最佳掺杂量.结果表明定量计算的结果与部分实验数据相符合.     

高掺锡二氧化硅玻璃薄膜的制作及折射率测量

最近研究发现掺锡的二氧化硅玻璃薄膜具有很强的光敏性,但采用化学气相沉积法制作的掺锡二氧化硅玻璃薄膜其锡含量都不高.本文报道了采用溶胶-凝胶法制作高掺锡二氧化硅薄膜(二氧化锡含量分别为75%mol和66%mol)的实验结果.并用透射光谱法测试了薄膜的折射率,测试结果表明薄膜折射率随波长的增加而减小,随着二氧化锡含量的增加而增加.     

锑掺杂二氧化锡薄膜的导电机理及其理论电导率

归纳总结了锑掺杂二氧化锡(ATO)的导电机理。晶格的氧缺位、5价Sb杂质在SnO2禁带形成施主能级并向导带提供n型载流子是ATO导电的两种主要机理。从材料的电导率公式出发,定性分析了二氧化锡中掺杂锑的含量存在理论最佳值,根据已有模型计算证明了锑掺杂二氧化锡电导率存在理论上限。掺杂二氧化锡中锑的最佳理论含量为1.49%(质量百分数),锑掺杂二氧化锡理论电导率最高为0.217×104(Ω·cm)-1,氧空位对ATO电导率的贡献为0.1506×104(Ω·cm)-1。     

ITO薄膜载流子浓度的理论上限

以氧化铟锡膜为例,讨论氧化物导体透明导电薄膜载流子浓度的理论上限,建立模型并给出了理论公式,得出氧空位和掺杂的最佳含量值。该理论也适用于掺铝氧化锌薄膜．     

超声雾化热解法制备ATO薄膜及其性能研究

采用超声雾化热解法在石英基底上制备了掺锑二氧化锡透明导电薄膜。采用X射线衍射检测薄膜的晶体结构,扫描电子显微镜观察薄膜的表面形貌,研究了不同基底温度和Sb掺杂量下薄膜的晶体优势生长面、晶粒形状的变化、可见光透过率和方块电阻。结果表明,薄膜的晶粒度在80～200 nm。当Sb摩尔比为1%、基底温度为540℃时,薄膜的方块电阻最小,约为16.91Ω/□。随着镀膜温度的上升,薄膜的优势生长面从(110)面逐渐向(211)面转移。当Sb掺杂比为1%时,薄膜的可见光透过率最高,当掺杂浓度增大后,薄膜的透过率出现下降。     

ZnO压敏陶瓷最佳掺杂含量的理论计算

从对电子薄膜材料研究中得到的最佳掺杂含量定量理论推广到ZnO陶瓷材料。该理论建立了电子薄膜材料的某一物理性能与晶体结构、制备方法和掺杂剂含量之间的联系，给出了一个能够拟合实验曲线的具有确定物理意义的抛物线方程。该方程的极值点确定了最佳掺杂含量与晶体结构和制备方法之间的定量关系，进而得到了一个掺杂最佳含量的表达式。系统地分析了ZnO压敏陶瓷的掺杂改性的实验结果，应用此表达式定量计算了ZnO压敏陶瓷的最佳掺杂含量，定量计算的结果与实验数据相符合。该理论也适用于其他薄膜材料最佳掺杂含量的理论计算。     

溶胶-凝胶法制备Zn2+掺杂MgO薄膜及光电性能表征

采用溶胶-凝胶(sol-gel)法,利用旋转涂覆技术在玻璃衬底及单晶Si(111)衬底上制备掺Zn2+的MgO薄膜。使用紫外可见光分光光度计测定掺杂薄膜的透过率,并采用XRD和EDS等测试手段研究薄膜的晶向结构和成分。结果表明,胶棉液的含量对成膜质量有重要的影响;随着Zn2+掺杂量的提高,薄膜透过率先增大后减小,在掺杂量为10%时,薄膜有最佳透过率;随着退火温度的升高,薄膜晶粒生长没有出现明显的择优取向。最后,对模拟放电单元进行放电测试,结果表明,在掺杂量为10%时,薄膜有最低着火电压和最高的记忆系数。     

A-氧化铁气敏纳米晶锡掺杂最佳含量的理论计算

应用与晶体结构和掺杂上关的最佳掺杂含量的理论表达式,对氧化铁气敏纳米晶粉体中锡掺杂最佳含量进行理论计算。定量计算的结果与实验数据相符合。该理论经适当的修改和解释后也适用于某些其他电子薄膜材料的最佳掺杂含量问题。     

Properties of nanostructured Al doped ZnO thin films grown by spray pyrolysis technique

Aluminium doped zinc oxide thin films were deposited on glass substrate by using spray pyrolysis technique. The X-ray diffraction study of the films revealed that the both the undoped and Al doped ZnO thin films exhibits hexagonal wurtzite structure. The preferred orientation is (002) for undoped and up to 3 at % Al doping, further increase in the doping concentration to 5 at % changes the preferred orientation to (101) direction. The surface morphology of the films studied by scanning electron microscope, reveal marked changes on doping. Optical study indicates that both undoped and Al doped films are transparent in the visible region. The band gap of the films increased from 3.24 to 3.36 eV with increasing Al dopant concentration from 0 to 5 at % respectively. The Al doped films showed an increase in the conductivity by three orders of magnitude with increase in doping concentration. The maximum value of conductivity 106.3 S/cm is achieved for 3 at % Al doped films.     

Solid‐State Approach for Fabrication of Photostable,Oxygen‐Doped Carbon Nanotubes

A novel procedure for effective fabrication of photostable oxygen‐doped single‐walled carbon nanotubes (SWCNTs) in solid‐state matrices has been developed. SWCNTs drop‐cast on various types of substrates are coated with oxide dielectric thin films by electron‐beam evaporation. Single tube photoluminescence spectroscopy studies performed at room and cryogenic temperatures reveal that such thin film‐coated tubes exhibit characteristic spectral features of oxygen‐doped SWCNTs, indicating the oxide thin film coating process leads to oxygen doping of the tubes. It is also found that the doping efficiency can be effectively controlled by the thin film deposition time and by the types of surfactants wrapping the SWCNTs. Moreover, aside from being the doping agent, the oxide thin film also serves as a passivation layer protecting the SWCNTs from the external environment. Comparing the thin film coated SWCNTs with oxygen‐doped tubes prepared via ozonolysis, the former exhibit significantly higher photostability and photoluminescence on‐time. Therefore, this one‐step deposition/oxygen‐doping procedure provides a possible route toward scalable, versatile incorporation of highly photostable oxygen‐doped SWCNTs in novel optical and optoelectronic devices.     

Influence of doping with third group oxides on properties of zinc oxide thin films

The study of modifications in structural, optical and electrical properties of vacuum evaporated zinc oxide thin films on doping with III group oxides namely aluminum oxide, gallium oxide and indium oxide are reported. It was observed that all the films have transmittance ranging from 85 to 95%. The variation in optical properties with dopants is discussed. On doping the film with III group oxides, the conductivity of the films showed an excellent improvement of the order of 10³ Ω^?1 cm^?1. The measurements of activation energy showed that all three oxide doped films have 2 donor levels below the conduction band.     

Different properties of aluminum doped zinc oxide nanostructured thin films prepared by radio frequency magnetron sputtering

Aluminium doped zinc oxide (AZO) nanostructured thin films are prepared by radio frequency magnetron sputtering on glass substrate using specifically designed ZnO target containing different amount of Al₂O₃ powder as the Al doping source. The optical properties of the aluminium doped zinc oxide films are investigated. The topography of the deposited films were investigated by Atomic Force Microscopy. Variation of the refractive index by annealing temperature are considered and it is seen that the refractive index increases by increasing the annealing temperature.     

Highly Conducting Transparent Indium-Doped Zinc Oxide Thin Films

Highly conducting transparent indium-doped zinc oxide (IZO) thin films have been achieved by controlling different growth parameters using radio frequency magnetron sputtering. The structural, electrical, and optical properties of the IZO thin films have been investigated for varied indium content and growth temperature (T _G) in order to find out the optimum level of doping to achieve the highest conducting transparent IZO thin films. The highest mobility and carrier concentration of 11.5 cm²/V-s and 3.26 × 10²⁰ cm^?3, respectively, have been achieved in IZO doped with 2% indium. It has been shown that as T _G of the 2% IZO thin films increase, more and more indium atoms are substituted into Zn sites leading to shift in (002) peaks towards higher angles which correspond to releasing the stress within the IZO thin film. The minimum resistivity of 5.3 × 10^?4 Ω-cm has been achieved in 2% indium-doped IZO grown at 700°C.     

Physical properties of hematite a-Fe2O3 thin films:application to photoelectrochemical solar cells

The physical properties and photoelectrochemical characterization of aluminium doped hematite α-Fe2CO3, synthesized by spray pyrolysis, have been investigated in regard to solar energy conversion. Stable Al-doped iron (Ⅲ) oxide thin films synthesized by a spray pyrolysis technique reveals an oxygen deficiency, and the oxide exhibits n-type conductivity confirmed by anodic photocurrent generation. The preparative parameters have been optimized to obtain good quality thin films which are uniform and well adherent to the substrate. The deposited iron oxide thin films show the single hematite phase with polycrystalline rhombohedral crystal structure with crystallite size 20-40 nm. Optical analysis enabled to point out the increase in direct band-gap energy from 2.2 to 2.25 eV with doping concentration which is attributed to a blue shift. The dielectric constant and dielectric loss are studied as a function of frequency. To understand the conduction mechanism in the films, AC conductivity is measured. The     

Nd掺杂对BiFeO3薄膜微结构和电学性能的影响

采用化学溶液方法,在LaNiO3/Si(100)衬底上生长了Nd掺杂的BiFeO3薄膜.XRD分析结果表明,随着Nd掺杂量的增加,薄膜晶格变小,Nd掺杂量为20%时,薄膜出现杂相.介电测试表明,随着Nd掺杂量的增加,介电常数和损耗减小,Nd掺杂量为2%的薄膜表现出很强的介电色散现象并出现介电损耗弛豫峰,其符合类德拜模型特征.随着Nd掺杂量增加,薄膜的漏电流减小,在低电场下,电流输运遵从SCLC模型,在高场下,电流输运遵循Poole-Frenkel模型.分析结果表明Nd掺杂对薄膜微结构和电学性能有显著影响.     

Evaluation of an Nd doping effect on characteristic properties of tin oxide

In the present work, transparent and conductive Nd doped SnO₂ thin films were deposited via spray pyrolysis. Crystallographic, morphological, optical and electrical characterizations of SnO₂ were researched as a function of Nd doping. The XRD analysis indicated the films had tetragonal cassiterite tin oxide structure and (211) preferential direction for NdTO-0, NdTO-1, NdTO-2 and NdTO-3 samples changed to (110) plane for NdTO-4 and NdTO-5 samples. The crystalline size and strain analysis were made by using a Williamson–Hall method. The SEM micrographs showed that all films had homogenously scattered pyramidal and small densely nanoparticles. The optical analysis indicated optical band gap value of undoped film increased with 1 at% Nd doping and then it decreased with more Nd content. The Hall measurements indicated that the highest electrical conductivity was obtained for 2 at% Nd doping content.