基于回音壁微腔的可见光波段光频梳研究进展（特邀）

基于光学微腔的光频梳具有阈值低、光谱宽及结构紧凑等特点,在精密测量与传感等领域具有重要的应用前景,因此近年来微腔光频梳成为国际研究热点。目前相关的研究都聚焦于红外波段锁模光频梳的产生原理和应用探索,虽然可见光波段的光频梳在精密光谱、原子钟及生物医学等领域有特殊应用价值,但是可见光频梳的实现极具挑战性。文中在简要阐述光频梳产生原理的基础上,介绍了在可见光波段实现光频梳的主要挑战,以及目前三种实现方案的研究进展,包括利用材料的二阶与三阶非线性效应、调节微腔的几何色散和模式强耦合效应调控色散来产生可见光频梳。     

高品质因子氧化硅微腔的制备和光频梳产生(特邀)

基于超高品质因子（Q值）和非线性光学微腔产生的光学频率梳（微腔光频梳）在大容量光通信、光学数据中心、光子神经形态运算以及大规模并行激光雷达等方面有着重要的应用。回音壁模式（WGM）微腔是研究微腔光频梳技术的一个重要平台,具有创纪录的超高Q值和超高精细度（Finesse）,能够实现超窄线宽激光、窄线宽光学频率梳,合成超低噪声的光子微波;同时也是研究腔内孤子动力学的重要平台,对掌握孤子态的光学频率梳特性起到了重要的支撑作用。利用二氧化碳（CO₂）激光器熔融氧化硅（SiO₂）石英棒制备了高Q值的WGM微腔。其自由光谱范围（FSR）在10 GHz以上,Q值达到了108。对腔的谐振和耦合理想特性进行了表征,并在开放环境下观察到微腔受潮引起的Q值退化现象,通过二次退火实现了Q值的回升。在SiO₂微腔中验证了基于非线性克尔（Kerr）效应的光学频率梳产生,其主要状态为调整不稳定性主导的低相干频率梳。同时,实验中也观察到了对应于全相干耗散孤子态频率梳的“阶跃”信号,表明目前制备的SiO₂微腔具备实现低噪声孤子光频梳的能力,并具有微腔光频梳的应用潜力。     

克尔微腔光频梳理论分析模型及多波长光源应用探讨

基于高品质因子微谐振腔的参量四波混频实现光学频率梳是一种新的频率梳实现方法,拓展了传统固体及非线性光纤飞秒激光器等光频梳的应用范围,在精密频率标定、天文光谱校准、任意波形产生、光学存储和孤子传输、片上通信用光源等方面具有较高的优势。本文简要总结、评述了几种主要的光频梳动力学分析模型及数值方法,以及这些不同方法的内在联系。基于描述光频梳动态行为的非线性Lugiato-Lefever方程分析了可能存在的动力学过程,并据此对不同特点光频梳进行了分类。通过设计反馈结构理论上研究了正常色散微腔和反常色散微腔的光梳特点,探讨了作为片上光互连用多波长光源应满足的条件及可能的实现途径。     

基于超高Q值氟化镁晶体微腔的克尔光频梳产生研究

克尔光频梳具有等距分布的梳状光谱结构,在精密测量、光钟、相干光通信、微波和光学任意波产生、光谱学及天文光谱仪校准等方面有着重要的应用。首先,微腔光频梳与其他光频梳系统相比,具有集成性高、体积小、功耗低的优势,大大扩展了光频梳的应用;其次,通过超精密加工方法制备了品质因子Q值达到了4.8×107的氟化镁微腔,并且得到了干净规律、排列规则的谐振谱,自由频率范围为9.73 GHz,为产生低重复频率光频梳提供了条件;最后,根据实验结果结合Lugiato-Lefever方程分析了氟化镁微腔光频梳的产生过程,研究了泵浦功率对光频梳的影响,通过调整失谐参数得到了孤子态光频梳。并且通过色散调控优化了微腔的光场模式,为产生具有超光滑光谱的孤子光频梳创造了先决条件,提升了光频梳性能。     

硫系集成光频梳（特邀）

硫系玻璃集成光学微腔（硫系微腔）具有高线性折射率和高非线性系数、超宽透光窗口、较低的热光系数,并且可通过常规半导体微纳加工技术实现精确的色散调控,在非线性集成光子学领域备受关注。近年来,来自中山大学的研究者们开发了新型Ge₂₅Sb₁₀S₆₅硫系材料平台并实现了一系列具有高品质的硫系集成光子器件。主要综述了基于硫系微腔实现集成孤子光频梳产生和调控方面的工作。通过不断优化集成光子器件的加工工艺,实现了具有高品质因子（Q>106）的集成微环谐振腔,进一步通过精确的色散调控分别在该硫系集成微腔内实现了低泵浦功率的锁模光孤子频梳和宽带可调谐的拉曼-克尔光频梳。     

基于集成光频梳的新型微波光子应用 （特邀）

基于光学微腔的集成光频梳具有光谱宽、谱线间隔大、体积小等优势,为微波光子系统带来了新的发展机遇。近年来涌现了多种基于微腔光梳的微波光子应用,包括高质量微波信号产生、微波光子信号处理、真延时微波波束形成等,具有相位噪声低、可重构能力强、奈奎斯特带宽大等优异性能,展现了集成微腔光梳在微波光子领域的广阔应用前景。     

中红外光学频率梳:进展与应用（特邀）

光学频率梳是一种宽谱的相干光源,由一系列等频率间隔的离散谱线组成,具有超高的时频精度。自诞生以来,光学频率梳为精密光谱学、光学测量、相干光通信、光时钟等多种应用的发展带来了革命性的变化。近年来,研究人员通过新型激光增益介质、非线性频率转换和微谐振腔等技术将频率梳扩展到中红外光谱区域(2~20 μm),进一步扩大了光频梳的应用范围。文中全面介绍了中红外光频率梳的产生机制、最新进展及应用。     

相干泵浦微腔光孤子基础与双光梳应用（特邀）

光学孤子是指一种通过非线性折射率势阱维持脉冲形状不变的光波,它广泛存在于光纤、飞秒激光器、参量振荡器等系统中。近年来,人们在相干泵浦下的高Q值微腔中也观测到了光孤子,这为研究光孤子性质提供了新的实验平台。又因为微腔光孤子在频域上对应高重频的光学频率梳,微腔光孤子的诞生也极大地推动了小型化光学频率梳的发展。微腔光孤子频率梳已经可以实现自参考锁定;这使得片上集成的光频合成器、光原子钟、波分复用光源、微腔光谱仪、微腔激光雷达等众多应用成为了可能。文中介绍了微腔光孤子的产生基础,特别是光孤子相互作用相关的研究,还讨论了基于微腔的双光梳测量在高速成像与中红外气体光谱分析上的应用。     

基于高效棱镜耦合的氟化镁微腔孤子光频梳产生

微腔孤子光频梳在相干光通信、光学频率合成、激光雷达、微波光子学和量子光学等领域有着广阔的应用前景,高效棱镜耦合是晶体微腔孤子光频梳集成应用及系统封装的必然技术途径。文章研制开发了一种耦合效率和有载Q值分别达到71.56%和1.8×10⁹的氟化镁微腔-棱镜耦合系统,并且基于该高效棱镜耦合系统实现了氟化镁微腔孤子光频梳和15.99 GHz低相噪微波信号产生,拍频信号相位噪声水平约为-117 dBc/Hz@10 kHz,极大推动了低相噪微型光电振荡器的实际应用发展。     

集成微腔光频梳在精密测量中的应用（特邀）

精密测量是现代物理学的基石,而激光光源的发展直接推动了测量科学与技术的进步。21世纪初,光学频率梳的发明促使人们成功实现最精准的时间/频率标准装置——光学原子钟,推动了绝对光学频率测量、基本物理常数测量、精密距离测量以及分子光谱测量等精密测量技术的发展。然而早期的光梳光源系统复杂、价格昂贵,一般工作于大型实验室里,限制了其应用场景的拓展。近年来,出现了一种新型集成微腔光频梳,其具有体积小、功耗低、可批量制备等优势,吸引了科学界和产业界的广泛关注。不同于传统光梳,这种集成微腔光梳不需要依赖增益介质或可饱和吸收体实现锁模,而是通过高品质因子微腔增强的非线性作用来实现光梳的激发与锁模。这种全新的光梳激发与锁模机制降低了精密光源的体积和成本,在平民化精密测量应用中具有优势。文中介绍了集成微腔光梳在精密测量领域中取得的进展,主要围绕微型化光学原子钟、超快精密距离测量、精密光谱测量三个方向。最后对集成微腔光梳在未来精密测量应用中的机遇与挑战进行了总结与展望。     

AlN微环谐振腔倍频程孤子光频梳（特邀）

基于光学微谐振腔的自参考耗散克尔孤子(Dissipative Kerr Solitons, DKSs)有广泛的应用，如频率合成器、相干通信、天文光谱仪校准、精密测量、光学时钟、双梳光谱学等。倍频程DKS已在氮化硅和铌酸锂微谐振腔中实现，笔者提出了一种在氮化铝(AlN)微环谐振腔中通过单一泵浦直接产生倍频程DKS的简单方案。通过将两个谐振频率相近的模式TE₀₀ 和TE₁₀分别作为泵浦谐振和辅助谐振模式，红失谐侧的辅助模式TE₁₀可以有效地平衡孤子形成过程中的热拖曳效应。慢速扫描泵浦光波长可获得稳定的倍频程展宽的孤子梳，带宽为1100~2300 nm，孤子存在范围最大为10.4 GHz(83 pm)。这是首次在AlN平台上获得倍频程展宽的克尔光孤子。该方案在单一泵浦源下就可以获得稳定的倍频程光孤子以及宽的孤子访问窗口，不同于其他方案需要额外引入复杂的控制手段和设备。     

氮化硅集成微腔光频梳器件关键制备技术(特邀)

微腔光频梳,又称微腔梳,是通过腔内四波混频过程产生的一种高相干宽谱的集成光源,有着优异的时频特性,可用于超精密分子光谱、相干通信、激光雷达、轻型化装备等测量应用,是基础科学、计量学及军事装备的重要工具,是一项颠覆性的技术。报道了一种集成氮化硅（Si₃N₄）微腔光频梳器件制备的关键技术,提出了一种方法平衡Si₃N₄的应力、厚度和化学计量之间的矛盾,以满足反常色散和减少双光子吸收的要求。利用这种改进的大马士革工艺微结构降低Si₃N₄厚膜的应力,减少应力缺陷对器件性能的影响,实现高品质Si₃N₄薄膜的可控制备。在微腔刻蚀工艺中,采用30 nm氧化铝牺牲层补偿掩模抗刻蚀能力,实现微环和波导侧壁粗糙度小于15 nm,满足了微腔高Q值的要求。经双光泵浦测量得到1 480~1 640 nm波段内的宽光谱高相干克尔光频梳。     

Recent progress in integrated electro-optic frequency comb generation

Optical frequency combs have emerged as an important tool enabling diverse applications from test-and-measurement,including spectroscopy,metrology,precision distance measurement,sensing,as well as optical and microwave waveform synthesis,signal processing,and communications.Several techniques exist to generate optical frequency combs,such as mode-locked lasers,Kerr micro-resonators,and electro-optic modulation.Important characteristics of optical frequency combs include the number of comb lines,their spacing,spectral shape and/or flatness,and intensity noise.While mode-locked lasers and Kerr micro-resonators can be used to obtain a large number of comb lines compared to electro-optic modulation,the latter provides increased flexibility in tuning the comb spacing.For some applications in optical communications and microwave photonics,a high degree of integration may be more desirable over a very large number of comb lines.In this paper,we review recent progress on integrated electro-optic frequency comb generators,including those based on indium phosphide,lithium niobate,and silicon photonics.     

III-V nitrides for electronic and optoelectronic applications

Recent developments in III-V nitride thin-film materials for electronic and optoelectronic applications are reviewed. The problems that are limiting the development of these materials and devices made from them are discussed. The properties of cubic boron nitride, aluminum nitride, gallium nitride, AlN/GaN solid solutions and heterostructures, and indium nitride are discussed. It is pointed out that the lack of a suitable substrate, with the possible exception of SiC for AlN, is a problem of considerable magnitude. This is compounded by the presence of shallow donor bands in GaN and InN which are apparently caused by N vacancies. The question of whether these vacancies occur (if they do) as a result of intrinsic or extrinsic (as a result of deposition) nonstoichiometry has not been answered. However, the recent advances in the fabrication of p-type GaN and a p-n junction light emitting diode via the electron beam stimulation of the Mg dopant are very encouraging and may considerably advance the technology of this material. This would indicate that self-compensation effects, similar to those observed in ZnO and ZnSe, may not be present in the III-V nitrides, since cubic BN (cBN) AlN and now GaN have been reportedly doped both n- and p-type     

Study of the polarizations of (Al,Ga,AlGa)N nitride compounds and the charge density of various interfaces based on them

The results of a theoretical study based on ab initio calculations of the polarization properties of AlN, GaN, and AlGaN semiconductors with the wurtzite structure are presented. The values of the spontaneous and piezoelectric polarizations, as well as the piezoelectric constants, are calculated for these nitride compounds. With the aim of further considering prospective heterostructures based on (Al,Ga,AlGa)N compounds, the charge densities at the AlN/GaN, AlGaN/AlN, and AlGaN/GaN interfaces and carrier concentration at the AlGaN/GaN heterointerface is estimated and compared with the experimental data.     

Spontaneous growth of GaN nanowire nuclei on N- and Al-polar AlN: A piezoresponse force microscopy study of crystallographic polarity

The polarity of gallium nitride (GaN) nanowire nuclei grown on AlN layers was studied by piezoresponse force microscopy (PFM). N- or Al-polar AlN layers were grown by molecular beam epitaxy (MBE) on Si (111) substrates by use of Al- or N-rich growth conditions, respectively. Short and low density GaN nanowires were then grown on each AlN polarity type. PFM measurements verified the expected AlN layer polarity and further indicated that predominantly N-polar nanowires are produced for growth on both AlN polarity types. Cross-section scanning transmission electron microscopy (STEM) images further reveal that the nanowires on Al-polar AlN films are nucleated on regions in the AlN layer that contain inversion domains, which propagate into the GaN nanowire nuclei. PFM measurements were found to be a convenient technique for mapping the polarity of a statistically significant number of individual GaN nanowires.     

Photonic devices based on thin-film lithium niobate on insulator

Lithium niobate on insulator(LNOI)is rising as one of the most promising platforms for integrated photonics due to the high-index-contrast and excellent material properties of lithium niobate,such as wideband transparency from visible to mid-infrared,large electro-optic,piezoelectric,and second-order harmonic coefficients.The fast-developing micro-and nanostructuring techniques on LNOI have enabled various structure,devices,systems,and applications.In this contribution,we review the latest developments in this platform,including ultra-high speed electro-optic modulators,optical frequency combs,opto-electro-mechanical system on chip,second-harmonic generation in periodically poled LN waveguides,and efficient edge coupling for LNOI.     

产生太赫兹辐射源的Nd:YAG双波长准连续激光器

产生太赫兹波辐射的方法可分为电子学和光子学两大类.在光子学领域,非线性光学差频方法是获取高功率、低成本、便携式、室温运转太赫兹波的主要方法之一.实验研究了激光二极管(LD)端面抽运Nd:YAG1319 nm/1338 nm双波长准连续线偏振运转激光器,理论计算了输出双波长在非线性晶体DAST(4-N,N-dimethylamino-4'-N-'methyl-stilbazolium tosylate)中差频产生太赫兹辐射的平均功率.在重复频率50 kHz时,双波长激光平均输出功率达到2.22 W,斜率效率12.72%,线偏振度0.983,脉冲宽度71.91 ns.M2因子仅为1.165,不稳定性小于0.487%.根据非线性差频理论,计算出可在1 mm厚DAST晶体中获得4.71 mw的3.23 THz高相干性太赫兹波辐射.这两条非常接近的谱线为进一步通过非线性光学差频方法获得高相干性太赫兹波提供了理论基础.