基于回音壁微腔的可见光波段光频梳研究进展（特邀）

基于光学微腔的光频梳具有阈值低、光谱宽及结构紧凑等特点,在精密测量与传感等领域具有重要的应用前景,因此近年来微腔光频梳成为国际研究热点。目前相关的研究都聚焦于红外波段锁模光频梳的产生原理和应用探索,虽然可见光波段的光频梳在精密光谱、原子钟及生物医学等领域有特殊应用价值,但是可见光频梳的实现极具挑战性。文中在简要阐述光频梳产生原理的基础上,介绍了在可见光波段实现光频梳的主要挑战,以及目前三种实现方案的研究进展,包括利用材料的二阶与三阶非线性效应、调节微腔的几何色散和模式强耦合效应调控色散来产生可见光频梳。     

高品质因子氧化硅微腔的制备和光频梳产生(特邀)

基于超高品质因子（Q值）和非线性光学微腔产生的光学频率梳（微腔光频梳）在大容量光通信、光学数据中心、光子神经形态运算以及大规模并行激光雷达等方面有着重要的应用。回音壁模式（WGM）微腔是研究微腔光频梳技术的一个重要平台,具有创纪录的超高Q值和超高精细度（Finesse）,能够实现超窄线宽激光、窄线宽光学频率梳,合成超低噪声的光子微波;同时也是研究腔内孤子动力学的重要平台,对掌握孤子态的光学频率梳特性起到了重要的支撑作用。利用二氧化碳（CO₂）激光器熔融氧化硅（SiO₂）石英棒制备了高Q值的WGM微腔。其自由光谱范围（FSR）在10 GHz以上,Q值达到了108。对腔的谐振和耦合理想特性进行了表征,并在开放环境下观察到微腔受潮引起的Q值退化现象,通过二次退火实现了Q值的回升。在SiO₂微腔中验证了基于非线性克尔（Kerr）效应的光学频率梳产生,其主要状态为调整不稳定性主导的低相干频率梳。同时,实验中也观察到了对应于全相干耗散孤子态频率梳的“阶跃”信号,表明目前制备的SiO₂微腔具备实现低噪声孤子光频梳的能力,并具有微腔光频梳的应用潜力。     

相干泵浦微腔光孤子基础与双光梳应用（特邀）

光学孤子是指一种通过非线性折射率势阱维持脉冲形状不变的光波,它广泛存在于光纤、飞秒激光器、参量振荡器等系统中。近年来,人们在相干泵浦下的高Q值微腔中也观测到了光孤子,这为研究光孤子性质提供了新的实验平台。又因为微腔光孤子在频域上对应高重频的光学频率梳,微腔光孤子的诞生也极大地推动了小型化光学频率梳的发展。微腔光孤子频率梳已经可以实现自参考锁定;这使得片上集成的光频合成器、光原子钟、波分复用光源、微腔光谱仪、微腔激光雷达等众多应用成为了可能。文中介绍了微腔光孤子的产生基础,特别是光孤子相互作用相关的研究,还讨论了基于微腔的双光梳测量在高速成像与中红外气体光谱分析上的应用。     

基于超高Q值氟化镁晶体微腔的克尔光频梳产生研究

克尔光频梳具有等距分布的梳状光谱结构,在精密测量、光钟、相干光通信、微波和光学任意波产生、光谱学及天文光谱仪校准等方面有着重要的应用。首先,微腔光频梳与其他光频梳系统相比,具有集成性高、体积小、功耗低的优势,大大扩展了光频梳的应用;其次,通过超精密加工方法制备了品质因子Q值达到了4.8×107的氟化镁微腔,并且得到了干净规律、排列规则的谐振谱,自由频率范围为9.73 GHz,为产生低重复频率光频梳提供了条件;最后,根据实验结果结合Lugiato-Lefever方程分析了氟化镁微腔光频梳的产生过程,研究了泵浦功率对光频梳的影响,通过调整失谐参数得到了孤子态光频梳。并且通过色散调控优化了微腔的光场模式,为产生具有超光滑光谱的孤子光频梳创造了先决条件,提升了光频梳性能。     

基于微环谐振腔产生光频梳的色散控制的研究进展

随着人们对通信容量的需求日益增大,基于微环谐振腔产生的光频梳,可以很好地满足通信系统的光源要求。光频梳具有光谱范围广、相干性高、集成化等特点,由于光频梳是基于四波混频效应产生的,因此对微环谐振腔的色散曲线要求比较严格。总结了目前几种控制微环谐振腔色散特性的最新研究,包括改变微环的宽度等,利用slot结构和微环结构相结合,采用光子晶体结构等方法,对这些结构的优缺点及性能作了比较分析。同时还对进一步优化微谐振腔的色散曲线提出了展望,利用微环和光子晶体结构的组合方法,有可能实现较小光谱范围内色散曲线的优化,提高四波混频的效率。     

基于宽禁带氮化物的微腔光频梳进展（特邀）

微腔光频梳在光谱测量、微波光子学、光学原子钟和相干光通信等领域具有重要的应用。宽禁带氮化物半导体材料,如氮化铝（AlN）和氮化镓（GaN）等属于非中心对称晶体,具有二阶和三阶光学非线性系数,宽带的透明窗口以及与蓝宝石衬底较高的折射率差,使其成为研究非线性光子器件的理想平台。文中介绍了氮化物微腔的特性,同时对基于氮化物微腔光梳的相关研究进展,包括AlN微腔中的宽谱光频梳产生和光学参量振荡、GaN微腔中的孤子光频梳产生等进行了介绍和展望。     

集成微腔光频梳在精密测量中的应用（特邀）

精密测量是现代物理学的基石,而激光光源的发展直接推动了测量科学与技术的进步。21世纪初,光学频率梳的发明促使人们成功实现最精准的时间/频率标准装置——光学原子钟,推动了绝对光学频率测量、基本物理常数测量、精密距离测量以及分子光谱测量等精密测量技术的发展。然而早期的光梳光源系统复杂、价格昂贵,一般工作于大型实验室里,限制了其应用场景的拓展。近年来,出现了一种新型集成微腔光频梳,其具有体积小、功耗低、可批量制备等优势,吸引了科学界和产业界的广泛关注。不同于传统光梳,这种集成微腔光梳不需要依赖增益介质或可饱和吸收体实现锁模,而是通过高品质因子微腔增强的非线性作用来实现光梳的激发与锁模。这种全新的光梳激发与锁模机制降低了精密光源的体积和成本,在平民化精密测量应用中具有优势。文中介绍了集成微腔光梳在精密测量领域中取得的进展,主要围绕微型化光学原子钟、超快精密距离测量、精密光谱测量三个方向。最后对集成微腔光梳在未来精密测量应用中的机遇与挑战进行了总结与展望。     

硫系集成光频梳（特邀）

硫系玻璃集成光学微腔（硫系微腔）具有高线性折射率和高非线性系数、超宽透光窗口、较低的热光系数,并且可通过常规半导体微纳加工技术实现精确的色散调控,在非线性集成光子学领域备受关注。近年来,来自中山大学的研究者们开发了新型Ge₂₅Sb₁₀S₆₅硫系材料平台并实现了一系列具有高品质的硫系集成光子器件。主要综述了基于硫系微腔实现集成孤子光频梳产生和调控方面的工作。通过不断优化集成光子器件的加工工艺,实现了具有高品质因子（Q>106）的集成微环谐振腔,进一步通过精确的色散调控分别在该硫系集成微腔内实现了低泵浦功率的锁模光孤子频梳和宽带可调谐的拉曼-克尔光频梳。     

中红外光学频率梳:进展与应用（特邀）

光学频率梳是一种宽谱的相干光源,由一系列等频率间隔的离散谱线组成,具有超高的时频精度。自诞生以来,光学频率梳为精密光谱学、光学测量、相干光通信、光时钟等多种应用的发展带来了革命性的变化。近年来,研究人员通过新型激光增益介质、非线性频率转换和微谐振腔等技术将频率梳扩展到中红外光谱区域(2~20 μm),进一步扩大了光频梳的应用范围。文中全面介绍了中红外光频率梳的产生机制、最新进展及应用。     

基于高效棱镜耦合的氟化镁微腔孤子光频梳产生

微腔孤子光频梳在相干光通信、光学频率合成、激光雷达、微波光子学和量子光学等领域有着广阔的应用前景,高效棱镜耦合是晶体微腔孤子光频梳集成应用及系统封装的必然技术途径。文章研制开发了一种耦合效率和有载Q值分别达到71.56%和1.8×10⁹的氟化镁微腔-棱镜耦合系统,并且基于该高效棱镜耦合系统实现了氟化镁微腔孤子光频梳和15.99 GHz低相噪微波信号产生,拍频信号相位噪声水平约为-117 dBc/Hz@10 kHz,极大推动了低相噪微型光电振荡器的实际应用发展。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Call for Papers

正Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the next decade.The involved researches and developments cover mobile communications,highway and last-mile broadband communication,domain specific communications,and emerging D2D M2M communications.Radio communication steps into its