Ultralow-power GaAs MESFET MSI circuits using two-phase dynamic FETlogic

Two-phase dynamic FET logic (TDFL) gates are used in GaAs MESFET MSI circuits to implement very low power 4-b ripple carry adders and a variable modulus (2 to 31) prescaler. Operation of the adders is demonstrated at 500 MHz with an associated power dissipation of less than 1.0 mW and at 750 MHz with P_d=1.7 mW. The prescaler, which contains 166 TDFL gates and 79 static gates, is shown to operate up to 850 MHz with an associated power dissipation of 9.2 mW from its 1.0-V supply. The operation of the adders and prescalers demonstrates the use of three- and four-input TDFL gates and a completely dynamic TDFL XNOR gate. The TDFL gates in these circuits dissipate only from 14 to 20 nW/MHz     

L, C and X band integrated synthetic aperture radar (SAR) receiver

An integrated receiver consisting of RF front ends, analog baseband (BB) chain with an analog to digital converter (ADC) for a synthetic aperture radar (SAR) implemented in 130 nm CMOS technology is presented in this paper. The circuits are integrated on a single chip with a size of 10.88 mm². The RF front end consists of three parallel signal channel intended for L, C and X-band of the SAR receiver. The BB is selectable between 50 and 160 MHz bandwidths through switches. The ADC has selectable modes of 5, 6, 7 and 8 bits via control switches. The receiver has a nominal gain of 40 and 37 dB and noise figure of 11 and 13.5 dB for 160 MHz BB filter at room temperature for L-band and C-band, respectively. The circuits, which use a 1.2 V supply voltage, dissipate maximum power of 650 mW with 50 MHz BB and 8 bit mode ADC, and maximum power of 800 mW with 160 MHz BB and 8 bit mode ADC.     

A 10-b 20-MHz 30-mW pipelined interpolating CMOS ADC

This paper describes a circuit design and experimental results of a video-rate 10-b analog-to-digital converter (ADC) suitable for portable audio-visual equipment. Two new circuit techniques, termed pipelined capacitive interpolation and error averaging circuits with capacitor networks, are developed. As a result, very low power dissipation of 30 mW at a low power-supply voltage of 2.5 V is attained at the conversion frequency of 20 MHz. Also, a good DNL of less than ±0.5 LSB and an acceptable signal-to-noise and distortion ratio of 55 dB are obtained for the input frequencies of 1 kHz and 1 MHz, respectively. The ADC is fabricated in 0.8-μm CMOS technology and occupies an area of 2.6×2.5 mm²     

Low phase noise IP VCO for multistandard communication using a 0.35-/spl mu/m BiCMOS SiGe technology

In this letter, we report that a commonly used 0.35-/spl mu/m, 60-GHz-F/sub MAX/ BiCMOS SiGe monolithic microwave integrated circuit (MMIC) technology is able to provide very low phase noise signal generation in the X-band frequency range. This statement has been demonstrated using a differential LC voltage-controlled oscillator (VCO) in which varactors are realized with metal-oxide semiconductor (MOS) transistors and inductors with a patterned ground shield technology. This VCO features an output power signal in the range of -5 dBm and exhibits a phase noise of -96 dBc/Hz at a frequency offset of 100kHz from carrier and -120 dBc/Hz at a frequency offset of 1 MHz. The VCO features a tuning range of 430 MHz or 4.3% of its operating frequency. Its power consumption is in the range of 70 mW (200 mW with buffers circuits) for a chip size of 800/spl times/1000 /spl mu/m/sup 2/ (including RF probe pads).     

Active radiating oscillator using a reflection amplifier module

A new radiating oscillator module is presented in which the cavity consists of an FET source and a multilayer slot coupled patch antenna exhibiting either an oscillator or an antenna. Oscillation conditions and design criteria of the structure are studied. Prototype circuits showed 4.81 mW power output and 50 MHz tuning range at 4.893 GHz.<>     

A 10-b 20-Msample/s low-power CMOS ADC

A single-ended input but internally differential 10 b, 20 Msample/s pipelined analog-to-digital converter (ADC) is demonstrated with 4 mW per stage using a single 5 V supply. The prototype ADC made of an input sample and hold (S/H) plus 8 identical unscaled pipelined stages consumes 50 mW including power consumed by a bias generator and two internal buffer amplifiers driving common-mode bias lines. Key circuits developed for this low-power ADC are a dynamic comparator with a capacitive reference voltage divider that consumes no static power, a source-follower buffered op amp that achieves wide bandwidth using large input devices, and a self-biased cascode biasing circuit that tracks power supply variation. The ADC implemented using a double-poly 1.2 μm CMOS technology exhibits a DNL of ±0.65 LSB and a SNDR of 54 dB while sampling at 20 MHz. The chip die area is 13 mm²     

2.5 V 43–45 Gb/s CDR Circuit and 55 Gb/s PRBS Generator in SiGe Using a Low-Voltage Logic Family

An alternative design approach for implementing high-speed digital and mixed-signal circuits is proposed. It is based on a family of low-voltage logic gates with reduced transistor stacking compared to series-gated emitter-coupled logic. It includes a latch, an xor gate, and a MUX with mutually compatible interfaces. Topologies and characteristics of the individual gates are discussed. Closed-form propagation delay expressions are introduced and verified with simulations. The proposed design style was used to implement a 43–45 Gb/s CDR circuit with a 600MHz locking range and a 55 Gb/s PRBS generator with a$2^7!-!1$sequence length. The circuits were fabricated in a SiGe BiCMOS technology with$f _T = 120~hboxGHz$. Corresponding measurement results validate the proposed design style and establish it as a viable alternative to emitter-coupled logic in high-speed applications. Both circuits operate from a 2.5 V nominal power supply and consume 650 mW and 550 mW, respectively.     

Sound design of low power nested transconductance-capacitancecompensation amplifiers

An amplifier design approach is presented which is based on an all region MOS transistor model. Low power analogue circuits are designed using the presented approach. For illustrative purposes a nested transconductance-capacitance compensated (NGCC) operational amplifier is designed. Verification was carried out using a CMOS chip prototype which yields an op-amp with 105 dB gain, a 1.05 MHz gain-bandwidth product, 0.28 mW power consumption and 0.137 mm² active area for a 2 V supply voltage and 10 kΩ/20pF load     

A low-power ASIC design for cell search in the W-CDMA system

This paper presents a low-power ASIC design for cell search in the wideband code-division multiple-access (W-CDMA) system. A low-complexity algorithm that is able to work satisfactorily under the effect of large frequency and clock errors is designed first. Then, a set of low-power measures are employed in the design of hardware architecture and circuits. Finally, through power analysis, critical blocks are identified and redesigned so as to further reduce the power consumption. The final design shows that the power is reduced by 51% from the original design of 133.6 mW to 65.49 mW, and its core area is also reduced by 31.9% from 3.4/spl times/3.4 mm/sup 2/ to 2.8/spl times/2.8 mm/sup 2/. The design is implemented and verified in a 3.3-V 0.35-/spl mu/m CMOS technology with clock rate 15.36 MHz.     

一种低压BiCMOS四象限模拟乘法器的设计

提出了一种结构简单的采用 Bi CMOS线性区跨导和输入预处理电路的低压 Bi CMOS四象限模拟乘法器 ,详细分析了电路的结构和设计原理。设计采用典型的 1.2 μm Bi CMOS工艺 ,并给出了电路的 SPICE模拟结果。模拟结果表明 ,当电源电压为± 3V时 ,功耗小于 2 .5m W,线性输入电压范围大约± 2 V。当输入电压范围限于± 1.6 V时 ,总谐波失真和非线性误差均小于0 .8% ,- 3d B带宽大于 110 MHz。     

10‐Bit 200‐MS/s Current‐Steering DAC Using Data‐Dependant Current‐Cell Clock‐Gating

This letter proposes a low‐power current‐steering digital‐to‐analog converter (DAC). The proposed DAC reduces the clock power by cutting the clock signal to the current‐source cells in which the data will not be changed. The 10‐bit DAC is implemented using a 0.13‐μm CMOS process with V_DD=1.2 V. Its area is 0.21 mm². It consumes 4.46 mW at a 1‐MHz signal frequency and 200‐MHz sampling rate. The clock power is reduced to 30.9% and 36.2% of a conventional DAC at 1.25‐MHz and 10‐MHz signal frequencies, respectively. The measured spurious free dynamic ranges are 72.8 dB and 56.1 dB at 1‐MHz and 50‐MHz signal frequencies, respectively.     

A high-frequency and high-resolution fourth-order /spl Sigma//spl Delta/ A/D converter in BiCMOS technology

A high-performance cascaded sigma-delta modulator is presented. It has a new three-stage fourth-order topology and provides functionally a maximum signal to quantization noise ratio of 16 bits and 16.5-bit dynamic range with an oversampling ratio of only 32. This modulator is implemented with fully differential switch-capacitor circuits and is manufactured in a 2-/spl mu/m BiCMOS process. The converter, operated from +/-2.5 V power supply, +/-1.25 V reference voltage and oversampling clock of 48 MHz, achieves 97 dB resolution at a Nyquist conversion rate of 1.5 MHz after comb-filtering decimation. The power consumption of the converter is 180 mW.<>     

Design and performance of multistage GaAs dynamic logic

GaAs Two-Phase Dynamic FET Logic (TDFL) circuits are capable of extremely low power dissipation (20 nW/MHz/gate), high speed (1 GHz), and are compatible with static GaAs logic families. This paper demonstrates that TDFL can be modified to execute two or three stages of logic in one clock phase. This extension provides extremely high functional complexity per gate that can be used to reduce power dissipation, reduce latency, and increase circuit density in both sequential and computationally-oriented applications. The performance of these gates was demonstrated by E/D MESFET IC test circuits fabricated by a digital IC foundry. A one clock cycle, 8-b carry-lookahead adder operated at 350 MHz with only 1.1 mW of power dissipation     

Precise CMOS current sample/hold circuits using differential clockfeedthrough attenuation techniques

New CMOS current sample/hold (CSH) circuits capable of overcoming the accuracy limitations in conventional circuits without significantly reducing operating speed are proposed and analyzed. A novel differential clock feedthrough attenuation (DCFA) technique is developed to attenuate the signal-dependent clock feedthrough errors. Unlike conventional techniques, the DCFA circuit allows the use of dynamic mirror techniques, and results in no additional finite output resistance errors or device mismatch errors. The test chip of the proposed fully differential CSH circuit with multiple outputs has been fabricated in 1.2-μm CMOS technology. Using a single 5-V power supply, experimental results show that the signal-dependent clock feedthrough error current is less than ±0.4 μA for the input currents from -550 μA to 550 μA. The acquisition time for a 900-μA step transition to 0.1% settling accuracy is 150 ns. For a 410-μA_p-p input at 250 MHz with the fabricated fully-differential CSH circuit clocked at 4 MHz, a total harmonic distortion of -60 dB, and a signal-to-noise ratio of 79 dB have been obtained. The active chip area and power consumption of the fabricated CSH circuit are 0.64 mm² and 20 mW, respectively. Both simulation and experimental results have successfully verified the functions and performance of the proposed CSH circuits     

用传输门VCO和动态PFD设计低功耗CMOS琐相环

锁相环（PLL）是VLSI系统的重要单元电路之一,为了实现高速低功耗的CMOS锁相环,用传输门VCO和动态反相器PFD电路设计CMOS锁相环。传输门结构VCO具有高速、低电压和低功耗的特性,而动态反相器PFD具有功耗低和面积小的特点。SPICE模拟表明,当电源电压为2．5V时,基于0．6μmCMOS工艺设计的CMOS锁相环电路,工作频率高达1000MHz,而功耗低于50mW。     

A 77-dB Dynamic Range, 7.5-MHz Hybrid Continuous-Time/Discrete-Time Cascaded $Sigma Delta$ Modulator

Although SigmaDelta modulators have largely been implemented as discrete-time (DT) circuits, a continuous-time (CT) approach offers significant advantages for realizing high-accuracy A/D converters at signal bandwidths where technology considerations may impose significant constraints. A CT design allows for relaxed amplifier unity-gain frequency and power requirements, which can enable the realization of high-resolution modulators with bandwidths of several MHz or more at low power. It also provides the advantage of inherent anti-aliasing filtering. This paper introduces a hybrid CT/DT SigmaDelta modulator for A/D conversion that combines the benefits of CT and DT circuits, while mitigating the challenges associated with CT design. The second-order first stage of a two-stage cascade is implemented in CT, while the first-order second stage is a DT circuit. An experimental prototype of the proposed modulator, integrated in 0.18-mum CMOS technology, operates from a 1.2-V analog supply to allow for easier migration to a 0.13-mum or 90-nm CMOS technology. The prototype achieves a dynamic range of 77 dB, a peak SNR of 71 dB, a peak SNDR of 67 dB, and worst-case anti-aliasing filtering of 48 dB for a signal bandwidth of 7.5 MHz and a sampling rate of 240 MHz. The total power dissipation is 89 mW, including 63.6 mW of analog power.     

Digitally controlled oscillator design with a variable capacitance XOR gate

A digitally controlled oscillator (DCO) using a three-transistor XOR gate as the variable load has been presented. A delay cell using an inverter and a three-transistor XOR gate as the variable capacitance is also proposed. Three-, five- and seven-stage DCO circuits have been designed using the proposed delay cell. The output frequency is controlled digitally with bits applied to the delay cells. The three-bit DCO shows output frequency and power consumption variation in the range of 3.2486-4.0267 GHz and 0.6121-0.3901 mW, respectively, with a change in the control word 111-000. The five-bit DCO achieves frequency and power of 1.8553-2.3506 GHz and 1.0202-0.6501 mW, respectively, with a change in the control word 11111-00000. Moreover, the seven-bit DCO shows a frequency and power consumption variation of 1.3239-1.6817 GHz and 1.4282-0.9102 mW, respectively, with a varying control word 1111111-0000000. The power consumption and output frequency of the proposed circuits have been compared with earlier reported circuits and the present approaches show significant improvements.     

Low-power CMOS fully-folding ADC with a mixed-averaging distributed T/H circuit

This paper describes an 8-bit 125 Mhzlow-powerCMOS fully-foldinganalog-to-digital converter(ADC).A novel mixed-averaging distributed T/H circuit is proposed to improve the accuracy. Folding circuits are not only used in the fine converter but also in the coarse one and in the bit synchronization block to reduce the number of comparators for low power. This ADC is implemented in 0.5μm CMOS technology and occupies a die area of 2 × 1.5 mm~2. The measured differential nonlinearity and integral nonlinearity are 0.6 LSB/-0.8 LSB and 0.9 LSB/-1.2 LSB, respectively. The ADC exhibits 44.3 dB of signal-to-noise plus distortion ratio and 53.5 dB of spurious-free dynamic range for 1 MHz input sine-wave. The power dissipation is 138 mW at a sampling rate of 125 MHz at a 5 V supply.     

Switched-current circuits in digital CMOS technology with low charge-injection errors

In this paper, digital CMOS switched-current (SI) circuits with low charge-injection errors are presented. These circuits are based on the operation of the switches at virtual-ground nodes to result in signal-independent charge injection. Based on this scheme, different topologies for the memory cell are discussed. To verify the theoretical concepts developed, a third-order elliptic low-pass SI filter is implemented in a 0.25-/spl mu/m digital CMOS process. The filter nominally operates with a clock frequency of 10 MHz, cutoff frequency of 1 MHz, and a power supply of 2.3 V, while consuming 29 mW of power and processing input signals as large as 600-/spl mu/A peak differential. The low-charge injection nature of the circuit is reflected in its low total harmonic distortion of -59 dB for a 0.3-MHz signal with a modulation index of 0.5.     

Low power integrated circuits for an implantable pulsed Doppler ultrasonic blood flowmeter

Describes two custom integrated circuits which were developed for an implantable pulsed Doppler ultrasonic blood flowmeter. Prime design goals were a minimum circuit volume, minimum power consumption, and operation at low supply voltages. The first of the two IC's performs system timing functions and produces the ultrasonic transmit burst. It can deliver up to 40 mW of peak output power at 50 percent efficiency and requires 3.7 mW standby power. The second IC, containing an RF amplifier, mixer and output amplifier, provides 54 dB conversion voltage gain for an 0.8 MHz bandwidth centered at 5.8 MHz, <3 dB noise figure, a dynamic range of 40 dB, and 1 /spl mu/s recovery time from a 1 V overload. This chip requires 2.7 mW power input.