P型硅纳米板压阻特性的理论研究

考虑量子尺寸效应与自旋轨道耦合作用,从含有应变的6×6 Luttinger-Kohn哈密顿量出发,采用有限差分方法建立了p型硅纳米板的能带结构模型.基于硅纳米板压阻特性与其能带结构的相关性,采用改进的压阻理论定量分析了厚度、杂质浓度与温度对其压阻系数的影响.研究结果表明:量子尺寸效应强烈改变了硅纳米板的能带结构,是其压阻系数增大的主要因素,而自旋轨道耦合作用仅对含较高应变的硅纳米板的能带结构有较大影响;硅纳米板的压阻系数具有尺寸效应,随厚度减小而增大,随杂质浓度增加或温度升高而减小.在高简并条件下,硅纳米板的压阻系数与温度无关,完全由杂质浓度的大小控制;在非简并条件下,情况刚好相反.最后,利用施加应力前后空穴等能面形状的变化定性分析了硅纳米板压阻特性的起源.     

多晶硅纳米薄膜晶界隧道压阻效应

实验表明重掺杂情况下多晶硅纳米薄膜的应变因子比相同浓度单晶硅的大,且随晶粒尺度减小而增大。为使这种特性在压阻器件中得到合理应用,在分析多晶硅能带结构的基础上,阐明了这种特性根源在于流过晶界的隧道电流随应变而变化引起的隧道压阻效应,给出了晶界压阻系数的计算方法,并从理论上解释了多晶硅纳米薄膜压阻特性的实验现象。     

非晶氮化硅纳米粒子──Ⅱ：电子结构理论研究

本文研究了连续无规网络模型非晶氨化硅纳米粒子的电子结构．研究表明非晶氨化硅纳米粒子具有量子限制效应：能带分裂，最低电子跃迁能量随尺寸减小增大，是一种非晶量子点．无序度增大使能级增宽，价带顶下降．我们把这些结果和实验进行了比较，并讨论了局域长度与量子限制效应的关系．     

多晶硅隧道压阻模型*

基于陷阱模型,分析了多晶硅能带结构和导电机理,给出了解释隧道压阻效应的等效电路,说明了构成多晶硅压阻效应的内在因素以及隧道压阻效应在其中的作用。综合晶界区域和晶粒中性区两方面压阻效应建立了新的压阻模型——隧道压阻模型。结果表明,掺杂浓度在1020cm-3以上,复合晶界的压阻系数不但大于晶粒中性区的压阻系数,而且随掺杂浓度增加而增大,从而揭示了多晶硅纳米薄膜在重掺杂情况下出现应变因子随掺杂浓增加而增大的重要实验现象的内在机理。     

掺杂浓度对多晶硅纳米薄膜应变系数的影响

为有效利用多晶硅纳米薄膜研制MEMS压阻器件,本文对LPCVD多晶硅纳米薄膜应变系数与掺硼浓度的关系进行了研究,并利用扫描电镜和X射线衍射实验分析了薄膜的结构特点.结果表明:在重掺杂情况下,纳米薄膜的应变系数明显大于相同掺杂浓度下单晶硅的应变系数,而且掺杂浓度在2.5×1020cm-3左右时,应变系数具有随掺杂浓度升高而增大的趋势.对这种实验结果依据隧道效应原理进行了理论解释,提出了多晶硅压阻特性的修正模型.     

掺杂浓度对多晶硅纳米薄膜应变系数的影响

为有效利用多晶硅纳米薄膜研制MEMS压阻器件,本文对LPCVD多晶硅纳米薄膜应变系数与掺硼浓度的关系进行了研究,并利用扫描电镜和X射线衍射实验分析了薄膜的结构特点.结果表明:在重掺杂情况下,纳米薄膜的应变系数明显大于相同掺杂浓度下单晶硅的应变系数,而且掺杂浓度在2.5×1020cm-3左右时,应变系数具有随掺杂浓度升高而增大的趋势.对这种实验结果依据隧道效应原理进行了理论解释,提出了多晶硅压阻特性的修正模型.     

压阻悬臂梁的制造及特性研究

简述了硅压阻悬臂梁的工艺流程,在力学参数的测试中,利用原子力显微镜,测得杨氏模量约为133GPa;在力电耦合特性的测试中,原子力显微镜探针对悬臂梁自由端步进下压,利用半导体参数测试仪,测得悬臂梁的位移灵敏度为1.95×10-7(A)-1,力灵敏度为4.22×10-6nN-1.另一方面,与Coventorware模拟结果相比,灵敏度实验值大约是模拟值的1.4倍,与理论值近似,说明当硅悬臂梁厚度进入纳米尺寸后,量子效应和表面效应明显,压阻效应增强.     

量子环终端布局对自旋输运的影响

研究了量子环透射终端与入射终端相对位置改变时的变化规律。研究结果表明:透射概率和自旋极化率随半导体环尺寸的增大作周期性振荡,都与透射终端位置的改变相关;铁磁电极、Rashba自旋轨道耦合、外加磁场对透射概率和自旋极化率具有不同影响;透射概率随δ势垒强度增加单调减小,自旋极化率随δ势垒强度增加单调增大。     

外加磁场对含双δ势垒的铁磁/半导体/铁磁异质结中自旋输运和散粒噪声的影响

研究了外磁场存在时,含双δ势垒的铁磁/半导体/铁磁异质结中自旋相关的透射概率和散粒噪声,讨论了量子尺寸效应和Rashba自旋轨道耦合效应.研究结果表明:不同自旋取向的电子隧穿异质结时,透射概率和散粒噪声随半导体长度的变化特性是作等幅振荡;外加磁场和Rashba自旋轨道耦合强度的增强都会加大透射概率和散粒噪声的振荡频率;外加磁场角度的改变会改变散粒噪声的振荡频率;双δ势垒的存在增大了自旋电子透射概率的振幅.     

外加磁场对含双δ势垒的铁磁/半导体/铁磁异质结中自旋输运和散粒噪声的影响

研究了外磁场存在时,含双δ势垒的铁磁/半导体/铁磁异质结中自旋相关的透射概率和散粒噪声,讨论了量子尺寸效应和Rashba自旋轨道耦合效应.研究结果表明:不同自旋取向的电子隧穿异质结时,透射概率和散粒噪声随半导体长度的变化特性是作等幅振荡;外加磁场和Rashba自旋轨道耦合强度的增强都会加大透射概率和散粒噪声的振荡频率;外加磁场角度的改变会改变散粒噪声的振荡频率;双δ势垒的存在增大了自旋电子透射概率的振幅.     

硅压阻式传感器的温度特性及其补偿

基于硅压阻式传感器的工艺过程与后续电路设计 ,讨论了减小其温度影响的措施。文中对在相同的硅基底上 ,采用诸如扩散、离子注入、薄膜淀积以及溅射等不同加工工艺制作实现的不同的压敏电阻特性 ,特别是温度特性进行了探讨和比较。针对一种具体的硅杯结构的压阻式传感器 ,设计、选择了加工工艺 ,给出了压敏电阻的近似温度补偿公式 ,讨论了传感器补偿电路的实现方案     

压阻式MEMS压力传感器的原理与分析

本文介绍了一种压阻式MEMS压力传感器的工作原理,该装置由玻璃支座、单晶硅衬底及PZT薄膜构成,压阻薄膜连接组成惠斯登电桥,以取得更高的电压灵敏度和低温度敏感性。使用有限元分析软件ANSYS对单晶硅衬底的轴对称模型进行了仿真分析,以达到优化设计的目的。     

Physical Model for the Resistivity and Temperature Coefficient of Resistivity in Heavily Doped Polysilicon

One of the key benefits of using polysilicon as the material for resistors and piezoresistors is that the temperature coefficient of resistivity (TCR) can be tailored to be negative, zero, or positive by adjusting the doping concentration. This paper focuses on optimization of the boron doping of low-pressure chemical vapor deposited polysilicon resistors for obtaining near-zero TCR and development of a physical model that explains quantitatively all the results obtained in the optimization experiments encompassing the doping concentration ranges that show negative, near-zero, and positive TCR values in the polysilicon resistors. The proposed model considers single-crystal silicon grain in equilibrium with amorphous silicon grain boundary. The grain boundary carrier concentration is calculated considering exponential band tails in the density of states for amorphous silicon in the grain boundaries. Comparison of the results from the model shows excellent agreement with the measured values of resistivity as well as TCR for heavily doped polysilicon. It is shown that the trap density for holes in the grain boundary increases as the square root of the doping concentration, which is consistent with the defect compensation model of doping in the amorphous silicon grain boundaries.     

压力传感器芯片版图设计中若干重要问题（1）

详细讨论了压阻型压力传感器设计中若刊重要问题，这些问题是合理利用压阻系数和膜上的应用，电阻条的布置和设计以及可靠性。     

Theoretical calculations of the Fermi level and of other parameters in phosphorus doped silicon at diffusion temperatures

Taking into account the heavy doping effects (i.e., band tailing and impurity band formation) and high temperature effects, the Fermi level in lightly and heavily compensated phosphorus doped silicon, at normal diffusion temperatures is calculated numerically from the charge neutrality condition. The effective intrinsic carrier concentration is a function of the doping level and of the degree of compensation. Above discussed impurity concentration dependent results are used to calculate the impurity activity coefficient, the vacancy activity coefficient, and the concentration of the total number of vacancies as a function of doping and temperature.     

A numerical calculation of auger recombination coefficients for InGaAsP/InP quantum well heterostructures

Auger recombination coefficients are calculated numerically for InGaAsP/InP quantum well heterostructures. In narrow quantum wells, the quasi-threshold and thresholdless mechanisms mainly contribute to the Auger recombination coefficient. For the processes involving two electrons and a heavy hole (CHCC) or an electron and two heavy holes with a transition of one of the holes to the spin-orbit split-off band (CHHS), the Auger recombination coefficients depend on temperature only slightly in a wide temperature range. The dependence of the Auger coefficient on the quantum well width is analyzed and found to be nonmonotonic.     

基于p-型氮化硼材料的深紫外LED设计

本文通过在发光二极管(light emitting diode,LED) 的p掺杂区域引入六方氮化硼(hexagonal boron nitride,h-BN) 结构,以提升深紫外(deep ultraviolet,DUV) LED的空穴浓度。通过COMSOL有限元软件对LED器件量子阱区域建模,结果表明:1) 掺入h-BN后,p区域空穴浓度提升了约一个数量级,发射率和内量子效率(inernal quantum efficiency,IQE) 得到了显著提升; 2) 随着h-BN厚度的增加,p区空穴浓度显著提升;3)h-BN相对于AlGaN材料带隙上移的特性,有效地阻挡了电子泄露,使量子阱区域电子和空穴复合进一步增强,有效改善了DUV LED的发光效率。本文提出的设计结构为实验制备高量子效率的DUV LED器件提供了解决方案。     

Effect of temperature on the electrical transport properties of p-type polycrystalline indium antimonide

Measurements of Hall coefficient (R_H), dc conductivity and Hall mobility have been made on p-type polycrystalline indium antimonide in the temperature range ～ 77–450K. The average size of the grains in the sample was ～0. 15 μm. It is found that Hall coefficient in the low temperature range is determined by the carrier concentration in the crystallites and n-type conduction predominates over p-type conduction above room temperature. Conductivity and Hall mobility were found to be thermally activated above 120K while the conduction near liquid nitrogen temperature is predominated by the variable range hopping. The effect of grain boundaries is found to be removed above ～ 370K. The experimental results were used to calculate the grain size, intrinsic carrier density, energy band gap of the sample and the concentration of trap states.     

Investigation and simulation on the dynamic shock response performance of packaged high-g MEMS accelerometer versus the impurity concentration of the piezoresistor

To enhance the stability of packaged high-g MEMS accelerometers with double cantilevers positioned asymmetrically, the dynamic shock responses of components versus impurity concentration of piezoresistors at various working temperatures have been probed by using Finite Element Method (FEM). Results indicate that the dynamic output responses of component are actually the superposition of the forced vibrations with dynamic shock and those of cantilevers in their eigenfrequency. The dynamic responses of components are sensitive to the working temperature. With the increase of working temperature, the inherent frequency vibrations of the cantilevers are depressed gradually. Moreover, the larger the difference between the working temperature and reference temperature, the more obvious the impurity effect of piezoresistors is. The difference between the peak output voltage of response under 1 × 10¹⁸ cm⁻³ and that under 1 × 10²¹ cm⁻³ varies greatly from −2.2146 mV at T = 0 °C to 8.6609 mV at T = 100 °C, of course, is partly due to the characteristic variation of damping media under various working temperatures. Therefore, to improve the stability of component and further weaken the impurity concentration effect and the temperature effect of piezoresistors on the performance of components, it is necessary to increase the impurity concentration of piezoresistors and keep the components working at relatively lower temperature only if the electro-performance of component is satisfied.     

Band-structure engineering of a cubic GaN quantum-well laser

A theoretical model of a cubic GaN quantum-well laser is studied taking into account the effects of strong spin-orbit (SO) split-off band coupling on the valence-band structure and the optical gain within the 6/spl times/6 Luttinger-Kohn model. It is expected that a very narrow separation (10 meV) between the SO band and the heavy- and light-hole bands causes two undesirable effects on the lasing of GaN quantum well: (1) the TE and the TM polarizations have comparable magnitudes over the wide range of carrier densities and (2) the SO band will be easily occupied by the injected holes which in turn reduces the injection efficiency or increases the lasing threshold. A combination of strain and the use of alloy is proposed to reduce the hole and the electron masses and to increase the SO band separation in order to reduce the lasing threshold.