掺Er~(3+)Al_2O_3光波导放大器增益特性的模拟计算

本文通过求解速率方程和传输方程 ,对掺 Er3+ 光波导放大器 (EDWA)的增益特性进行了研究。在不同的泵浦波长下 (980 nm、1480 nm) ,计算并分析了 EDWA的增益与波导长度、掺 Er3+浓度及泵浦光强的关系 ,给出了 EDWA的最佳掺 Er3+ 浓度、最佳波导长度以及相应的最大增益值 ,为光波导放大器的设计提供了依据     

掺铒波导放大器性能的数值模拟

利用重叠因子简化掺铒玻璃波导放大器(EDWA)四能级模型的速率一传输方程,以数值模拟的方法,得到了EDWA的增益与Er3+离子浓度、泵浦功率、波导长度等参数的关系.结果表明选择合适的铒离子浓度是制作EDWA的关键;为了全面发挥EDWA的性能,需要优化泵浦功率、波导长度等参数.     

条形掺Er3+波导光放大器的理论分析

通过求解传输-速率方程的方法对条形掺Er3+波导放大器(EDWA)的特性进行了理论分析,包括特定折射率光波导中的信号光和泵浦光模场分布及EDWA的增益特性.     

掩埋型掺铒玻璃波导光放大器的特性分析

通过求解双向泵浦传输-速率方程的方法对掩埋型掺饵玻璃波导光放大器（EDWA）的特性进行了理论分析,包括特定折射率光波导中的信号光和泵浦光模场分布,以及EDWA的增益特性。     

掩埋型掺铒玻璃波导光放大器的特性分析

通过求解双向泵浦传输－速率方程的方法对掩埋型掺铒玻璃波导光放大器（EDWA）的特性进行了理论分析，包括特定折射率光波导中的信号光和泵浦光模场分布，以及EDWA的增益特性。     

Er2Yb 共掺磷酸盐玻璃波导放大器噪声特性研究

从描述Er2Yb 共掺磷酸盐玻璃光波导放大器的速率方程与光功率传输方程出发,计 算Er2Yb 共掺磷酸盐玻璃光波导放大器的噪声指数,讨论在980nm 泵浦光的作用,Er 离子浓度、泵浦光功率、器件长度以及输入信号光功率对Er2Yb 共掺磷酸盐玻璃光波导放大器噪声指数的影响。     

集成光波导放大器波导截面面积的优化

从信号光及泵浦光在波导内的模式分布出发,提出了一种新的重迭因子的分析方法,对1 480 nm波段泵浦的掺铒光波导放大器(EDWA)进行了研究.探讨了光波导截面面积对EDWA增益的影响,得出了波导获得最大增益的波导截面面积范围,最后指出重迭因子是影响波导增益的一个重要方面.     

1060nm掺钕磷酸盐波导放大器的特性研究

在四能级钕玻璃波导放大器物理模型的基础上,用重叠积分法研究了以802nm泵浦光放大1060nm信号的掺钕磷酸盐波导放大器的速率-传输方程。通过数值模拟,获得了增益特性和波导掺杂浓度、泵浦功率和波导长度的曲线关系。     

Er-Yb共掺磷酸盐玻璃波导放大器噪声特性研究

从描述Er-Yb共掺磷酸盐玻璃光波导放大器的速率方程与光功率传输方程出发，计算Er-Yb共掺磷酸盐玻璃光波导放大器的噪声指数，讨论在980nm泵浦光的作用下，Er离子浓度、泵浦光功率、器件长度以及输入信号光功率对Er-Yb共掺磷酸盐玻璃光波导放大器噪声指数的影响。     

铒镱共掺波导放大器的增益特性

在忽略放大自发辐射(ASE)及均匀掺杂和稳态的情况下,在初始能量转移效率的基础上从速率方程和传输方程出发,推导出了用于分析铒镱共掺波导放大器(EYCDWA)的新公式.利用这些公式分析了泵浦光功率、信号光功率、掺杂浓度、波导长度对放大器增益特性的影响,并与单掺铒波导放大器(EDWA)进行了比较,得到了一些具有实用价值的模拟结果.     

Characteristics of metal-ferroelectric-insulator-semiconductor structure using Sr0.8Bi2.2Ta2O9 and Sr0.8Bi2.2Ta2O9-BaZrO3 for ferroelectric gates

Characteristics of BaZrO₃ (BZO) modified Sr_0.8Bi_2.2Ta₂O₉ (SBT) thin films fabricated by sol-gel method on HfO₂ coated Si substrates have been investigated in a metal-ferroelectric-insulator-semiconductor (MFIS) structure for potential use in a ferroelectric field effect transistor (FeFET) type memory. MFIS structures consisting of pure SBT and doped with 5 and 7 mol% BZO exhibited memory windows of 0.81, 0.82 and 0.95 V with gate voltage sweeps between −5 and +5 V, respectively. Leakage current density levels of 10⁻⁸ A/cm² for BZO doped SBT gate materials were observed and attributed to the metallic Bi on the surface as well as intrinsic defects and a porous film microstructure. The higher than expected leakage current is attributed to electron trapping/de-trapping, which reduces the data retention time and memory window. Further process improvements are expected to enhance the electronic properties of doped SBT for FeFET.     

Some new FIR laser lines of optically pumped12CH316OH,12CH316OD, and12CH3I,12CH3Br,12CD2Cl2absorption spectroscopy of water and acetonitrile

The wavelength, polarization, and output power of several lines of the optically pumped CW FIR¹²CH3¹⁶OH (methanol) and¹²CH3¹⁶OD (1-D deuterated methanol), methyl iodide, methyl bromide, and deuterated methylene chloride lasers have been determined. In addition to lines already reported in the literature, seven strong lines have been observed. Optimum performance of the laser system is achieved by means of an improved coupling of the CO2pump power into the resonator and extraction of the FIR power from the resonator. Measurements on the power absorption coefficient of water using the laser indicate thatalpha(bar{nu})rises to almost 1100 Np ċ cm^-1at 170 cm^-1, and then shows a gradual fall with an increase in frequency. A strong temperature dependence of the 200 cm^-1peak inalpha(bar{nu})is predicted, with a decrease in the frequency of maximum power absorption coefficient with an increase in temperature. The range of measurements for acetonitrile is extended to lower frequencies so as to overlap with those determined from other millimeter wave techniques. For highly power-absorbing liquids,alpha(bar{nu})is estimated to be within ± 5 percent.     

In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As abrupt double-heterojunction bipolar transistors

In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As n-p-n abrupt double-heterojunction bipolar transistors grown by molecular beam epitaxy (MBE) have been realized for the first time. DC current gains in excess of 300 have been measured on devices operated in the emitter-up configuration. DC current gains around 50 are obtained on device structures with Be+ implanted extrinsic base regions operated in the emitter-down configuration. The carrier injection and collection behavior of the abrupt InGaAs/InAlAs heterojunctions is discussed.     

Beat-frequency between measurements between C12O216and C12O218lasers

Several beat frequencies in the range below 6 GHz have been measured using a C¹²O2¹⁶laser and a C¹²O2¹⁸laser operating on several pairs of closely spaced lines in the 9.3-μm region.     

（Li,Nb）掺杂SnO2压敏材料的电学非线性研究

研究了掺锂对SnO2压敏电阻器性能的影响.研究发现Li+对Sn4+的取代能明显提高陶瓷的烧结速度和致密度,且能大幅度改善材料的电学非线性性能.掺入x(Li2CO3)为1.0%的陶瓷样品具有最高的密度(P=6.77g/cm3)、最高的介电常数(ε=1851)、最低的视在势垒电场(EB=68.86V/mm)和最高的非线性常数(α=9.9).对比发现,Na+由于具有较大的离子粒半径,其掺杂改性性能相对较差.提出了SnO2@Li2CO3@Nb2O5晶界缺陷势垒模型.     

Temporal stability of circulating current in thin film Tl2Ba2CaCu2O8 and YBa2Cu3O7

The temporal stability of trapped transport current in annular thin film Tl₂Ba₂CaCu₂O₈ (TBCCO) and YBa₂Cu₃O₇ (YBCO) wafers has been accurately measured and has been found to be of suitable quality for the stringent requirements of nuclear magnetic resonance (NMR) magnets. No detectable decay, to the limit of the experimental apparatus (2*10^-14 Ω), was detected in those wafers with transport current at or below the critical current density J_c. The critical current density, as previously determined from 12 μm meander lines, was confirmed in a wafer with a width of 1.9 cm. The profile of trapped magnetic field resulting from induced current was modeled in order to assess its effect on the uniformity of an NMR magnet     

Laser4F3/2→4I9/2and4F3/2→4I13/2transitions in KY(WO4)2:Nd3+

We report the observation of lasing at 0.9137 μm and 1.3545 μm in neodymium-doped KY(WO4)2at 77 K. Transition cross sections, fluorescent line width, and branching ratios are given.     

Initiation of NF3-H2chemical reactions via CO2laser irradiation of NF4BF4

NF4BF4has been irradiated with a low-power CO2laser to produce reactive species which then initiate reactions in an ambient NF3-H2mixture. The laser-induced decomposition of NF4BF4in vacuum was measured as a function of laser power and energy. The laser-induced decomposition threshold was determined to be 40 mJ, which corresponds to a laser fluence of 20 J/cm². This same value was determined for the initiation threshold of NF3-H2reactions via CO2laser irradiation of NF4BF4. Visible and infrared emissions were observed from initiated NF3-H2mixtures. This radiative technique has attractive features for initiating reactions in solid-gas systems.     

Ho3+/Yb3+共掺的SiO2-Al2O3-BaO-BaF2微晶玻璃上转换发光研究

制备了Ho3+/Yb3+共掺的氧氟硅酸盐玻璃, 根据玻璃样品的差热分析进行微晶化处理, 测试了Ho3+/Yb3+共掺微晶玻璃的X射线衍射(XRD)图谱、吸收光谱和上转换发光光谱。结果发现, 在980 nm LD激发下, Ho3+/Yb3+共掺的含BaF2纳米晶的氧氟硅酸盐微晶玻璃可以同时观察到绿光(544 nm)和红光(656, 748 nm)上转换发光, 分别对应于Ho3+ 离子的5F4/5S2→5I8, 5F5→5I8和5F4/5S2→5I7能级跃迁, 与未热处理的玻璃样品相比, 微晶玻璃样品的绿光发光强度增强约347倍。研究结果表明含BaF2纳米晶的氧氟硅酸盐微晶玻璃是一种潜在的上转换基质材料。     

Effect of Ge-GeO2 co-doping on non-ohmic behaviour of TiO2-V2O5-Y2O3 varistor ceramics

An investigation was made into the effect of doping with the elemental crystal Ge or/and GeO₂ on the TiO₂-V₂O₅-Y₂O₃ varistor ceramics. The result shows that as the doping contents of V₂O₅ and Y₂O₃ are 0.5 mol%, respectively, co-doping with 0.3 mol% Ge and 0.9 mol% GeO₂ makes the highest α value (α = 12.8), the lowest breakdown voltage V_1mA (V_1mA = 15.8 V/mm) and the highest grain boundary barrier Φ_B (Φ_B = 1.48 eV), which is remarkably superior to the TiO₂-V₂O₅-Y₂O₃ varistor ceramics undoped with Ge and GeO₂ and mono-doped with Ge or GeO₂. The TiO₂-V₂O₅-Y₂O₃-Ge-GeO₂ ceramic has the prospect of becoming a novel varistor ceramic with excellent electrical properties.