二极管阵列声表面波存储相关卷积器的研制

介绍了一种LiNbO3抽头延迟线外接p n二极管阵列结构的声表面波存储相关卷积器.器件的中心频率为30 MHz,卷积效率为-54 dBm,存储相关效率为-76 dBm,信号存储时间大于70 ms.讨论了二极管阵列少子寿命与存储时间的关系,计算了相关输出与参考信号和读信号的关系,结果表明这种结构的器件是双线性的.对这种结构器件的设计及优化提出了建议.     

声表面波存贮相关卷积器的研制

本文介绍了ＬｉＮｂＯ３抽头延迟线（ＴＤＬ）外接ｐ＾＋ｎ二极管阵列结构的声表面波（ＳＡＷ）存贮相关卷积器。器件的中心频率为３０ＭＨｚ，卷积效率为－５４ｄＢｍ，存贮相关效率为－７６ｄＢｍ，信号存贮时间大于７０ｍｓ。文中讨论了杂波产生的原因及其抑制，以及二极管阵列少子寿命与存贮时间的关系，计算了相关输出与参考信号和读信号的关系，结果表明这种结构的器件是双线性的。文中还对这种结构器件的设计及优化提出了建议     

瞬态模式SAW TDL／P^＋N二极管存储相关卷积器

对瞬态模式ＬｉＮｂＯ３抽头延迟线（ＴＤＬ）外接ＰＮ二极管阵列结构的声表面波存储相关卷积器进行了详尽的理论分析,对影响器件性能的重要参量进行了分析计算。讨论了器件存储时间与二极管少于寿命的关系,给出了二极管在窄脉冲作用下的瞬态充电过程。并对研制的器件进行了测试,器件的效率为－７６ｄＢｍ。文中结论可用于这种结构器件的设计及优化。     

3.6微秒存储相关器读写实验及结果

通过在单片式MZOS结构卷积器中制作pn结二极管阵列,制成了这种结构的存储相关器/卷积器。我们利用这种器件作了对信号的存储、相关和卷积等一系列实验,描述了器件性能及工作方式和原理,为存储相关器作为信号处理器件的应用开发提供了有益的参考。     

文摘选辑

1 声表面波技术93189 改良型SAW二极管卷积器——Yin J H.Elertrom Lett.1992.28(2):172～174叙述与逆偏压二极管同时动作,不用偏压电阻、各抽头互相绝缘的SAW二极管卷积器.通过抽头的新式配置.可以较宽频带工作.而且从实验结果,28个抽头的器件获得双线性因子55dBm.(郭)93190 新型SAW存储相关器及其在实验性扩频系统中的应用——Wu B-X.IEEE Int Symp CircuitsSyst.1991.5:2605～2612     

带补偿电路的声表面波卷积器初探

介绍了采用束宽压缩多条耦合器，带补偿电路的声表面波卷积器的基本原理，设计与制作，给出了测量方法及测试结果，实验表明，声表面波卷积器向组件化方向发展已成为可能。     

声表面波弹性卷积器信号传播与相关

本文介绍了声表面波弹性卷积器的信号传播和相关,分析了卷积器的脉冲响应、自卷积及波导色散对相关峰值的影响.给出了实验结果.     

文摘选辑

一、声表面波技术001 条带耦合SAW存贮相关器的原理—R.S.Wagers:IEEE Trans.Sonics ＆-Ultrason.,1985:32(5)716—27本文论述的相关器制作在GaAs基片上,不用薄膜涂层,用普通叉指换能器输入射频,其输出端由叉指换能器组成,换能器的每个抽头与在声束边缘的GaAs肖特基二极管相连.分析并讨论了侧边馈入肖特基二极管的电阻信道效应.介绍了存贮过程中的工作性能及其线性.(宗)002 多抽头SAW卷积器的空间均匀性及宽带匹配——E.L.Adler:IEEE Trans.Sonics ＆ Ultrason.,1985:32(5)685—89用从长卷积器中获取信号的单抽头,会因电磁效应引起的幅度和非均匀性而恶化卷积器的性     

单片式3.6μs pn结二极管存储相关器/卷积器

本文报道一种单片式金属氧化锌、二氧化硅(MZOS)结构存储相关器。在我国首次实现将参考信号“写入”(存储)二极管阵列中,然后用读信号将其“读出”,该器件也可用作卷积器。本文简叙了器件设计、结构、制作方法、工作模式和性能参数。     

高可靠大时带积声表面波卷积器

一种采用小孔径换能器，多抽头波导的简洁有效的设计的卷积器获得了较好的性能，该器件具有２０％以上的相对带宽和２５．６μｓ的互作用时间，设计充分考虑了技术指标和可靠性要求，使器件能满足严格的工作条件，为器件的广泛应用奠定了基础。     

Mismatch losses in multiply tapped SAW convolvers

An analysis procedure is given for calculating the output mismatch loss in a multiply tapped SAW convolver. The analysis takes into account the lossy transmission-line properties of convolvers and includes realistic values for the parasitics due to bonding pads and wires. Results illustrating trade-offs between bandwidth and insertion loss for a convolver with six taps are given, which provide guidelines for the design of broadband output matching networks.     

General analysis of bilinear SAW convolvers

A general analysis for bilinear devices is derived, showing that such devices can be characterised by a two-dimensional frequency response or by a real two-dimensional impulse response. The forms of these functions for an ideal SAW convolver are given. It is shown that in general the output signal/noise ratio of a convolver depends on the timing of the input signal.     

Semidigital multiplication by discrete convolution using surfaceacoustic wave (SAW) devices

The computation of the product of two digital numbers by discrete convolution by a surface acoustic wave (SAW) convolver is described. The principal limitations of the method are discussed as well as realistic performance numbers that can be achieved by using available SAW device technology. The multiplication is done by convolving the 2-b streams that represent two digital input operands in a SAW convolver at a rate of 100 MHz. The convolver output is the product in mixed binary representation. It consists of one analog value per digit with a resolution of 0.5%. These values are digitized at a rate of 200 MHz by an 8-b flash analog-to-digital converter and added up to form the digital result. It is shown that such a device has a very high computing power that can be adapted to special applications. One extreme is the multiplication of 256-b integer numbers, corresponding to a dynamic range of 1:10⁷⁷, at a rate of 0.2 MIPS. The other extreme is the computation of matrix products where computing speeds of 12000 MIPS can be achieved for 8-b operands, as required, for example, in image filtering applications     

声表面波卷积器／存储相关器用ZnO膜的制备

本文介绍了声表面波(SAW)卷积器/存储相关器用优质氧化锌(ZnO)压电膜的制备方法。用平面磁控溅射技术溅射ZnO陶瓷靶沉积出了激励SAW西沙瓦模式的优质ZnO膜。用同轴磁控溅射技术溅射ZnO陶瓷靶沉积出的优质ZnO膜制作ZnO/Si单片式SAW卷积器,使该器件性能进一步改善,同时给出了相应的实验结果。     

SAW based convolver for GPS signal acquisition module

Aiming at acquiring navigation signal with weak strength at large speed in challenging environment, SAW convolver is employed to implement partial correlation in weak strength and high dynamic GPS signal acquisition. After introducing principle of GPS signal acquisition, difficulty in acquiring GPS signal in special environments, for example indoor, urban street and woods, is analyzed in detail. The suitability of SAW device in acquiring challenging GPS signal is discussed about. A novel GPS receiver structure based on SAW device is proposed. In final, simulation is performed to testify effectiveness of this new structure.     

Efficient SAW convolver with 30 ?s integration time

A SAW convolver is described with input bandwidth 20 MHz and integration time in excess of 30 ?s. It displays a high convolution efficiency (? ?63 dBm) and self convolution suppression exceeding 40 dB.     

An integrated piezoelectric-insulator DMOST surface-acoustic-wave convolver

A detailed investigation and analysis of a new device, the PI-DMOST convolver, is presented. The feasibility of this type of convolver has been previously demonstrated [1]. In this paper, we present the experimental results of another configuration of the device, fabricated with a new process. The theory is presented in detail for operation of the convolver using first-order Rayleigh-mode waves, and then extended to include other SAW modes.The convolver measures 100 μm by 1 cm, has a dynamic range of 70 dB, and is realized using ZnO piezoelectric films on a planar-processed silicon wafer.     

Determination of capture cross section and surface-states concentration profile using the surface-acoustic-wave convolver

Energy distribution of surface states and majority-carriers capture cross section is determined using the surface-acoustic-wave (SAW) convolver. The semiconductor is placed a small distance above the SAW delay line, with a uniform air gap between the two media. A fast rise time dc pulse is applied across the semiconductor-delay line structure, and the resulting change in the SAW propagation loss is observed. The transient response of the SAW propagation loss represents the emission or trapping of majority carriers from surface states. From this transient response, the capture cross section and the concentration profile of the surface states are determined. The results obtained agree with the already known distribution of fast surface states; it is constant at the middle of the gap and increases towards the conduction band, whereas the capture cross section is constant in the middle of the gap and decreases toward the conduction band. This new SAW technique is simple, sensitive, and requires no contact to the semiconductor surface.     

Photoconductivity study of semiconductors using the surface acoustic wave convolver

Photoconductivity study of a semiconductor using the SAW convolver is presented. The semiconductor is placed either on or a small distance above the SAW delay line. A fast rise time pulse of light is applied to the semiconductor surface through the piezoelectric substrate, and the resulting change in the semiconductor conductance is observed by the relaxation of the SAW propagation loss. This technique has the important advantage that no ohmic contact to the semiconductor is needed.     

声表面波卷积器的计算机辅助设计

论述了大规模制作低成本、高性能的声表面波卷积器／相关器中的计算机辅助设计。