多层介质多导体系统电磁参量的一种有效解法

本文提出了一种计算多层介质多导体传输线电容和电感矩阵的有效方法。导体带的厚度既可为无限薄,又可为有限。利用逆FFT将谱域离散系统变换为空域离散系统,然后用矩量法求解结果。本文方法具有计算时间短和内存耗费较小的优点。最后给出了若干计算实例并与已有结果进行了比较。     

考虑导体厚度的多层传输线结构准静态分析

本文提出了一种计算考虑导体厚度的平面分层多导体传输线准静态参数的新方法。基于这种方法用直线法计算了有导体厚度的微带结构，并与等效导带加宽法的结果作了比较．证明这种方法在计算极薄导体带时有独特的优点。最后利用此法计算了一种多层结构。     

多层介质中多导体拐角结构电容参数的提取

本文给出一种计算多层介质中多导体拐角互连结构的准静态电容参数的快速算法─—维数缩减技术（DRT），并和有限差分法相结合，快速、准确地提取了多层介质中多导体拐角结构的准静态电容矩阵。由于维数缩减技术能充分利用集成电路结构分层的特点，从而大大减少了计算所需的时间和存储空间。文中给出的计算结果与Ansoft软件的计算结果吻合得较好，而计算所需的时间和存储空间大大少于Ansoft软件。     

考虑导体厚度的多层传输线结构准静态分析

本文提出了一种计算考虑导体厚度的平面分层多导体传输线准静态参数的新的方法基于这种方法用直线法计算了有导体厚度的微带结构,并与等效导带加宽法的结果作了比较,证明这种方法在极薄志体带时有独特的优点,最后利用此法计算了一种多层结构。     

矩量法分析屏蔽导体内的多层介质多导体传输线

利用矩量法分析屏蔽导体内的多层介质多导体传输线。首先，建立该问题的算子方程；然后离散化算子方程，通过对导体和介质分界面的总电荷及介质和介质分界面自由电荷的自由空间二维格林函数分析，得出矩阵方程；最后得出屏蔽导体内多层介质中各导体的电容矩阵和电感矩阵。数值结果与现有类似结构分析结果相比较一致性较好。     

高速集成电路中多导体传输线的电磁参数提取与瞬态响应分析

本文在直线法中引入了一种新技术，将多层介质多导体结构的各层介质等效为级联的坪端口网络，介质层间导体等效为端口的电流源，从而大大简化了公式推导，方便了编程计算。     

多芯片组件带网孔接地板多导体互连线结构的电磁特性分析

本文给出一基于准静态场的直线法,来分析多芯片组件（ＭＣＭ）带有网孔接地板的多层多导体互连线结构的分析方法,以此提取等效传输线的特性参数。最后给出几个实例的计算结果。     

有损土壤上的多导体传输线的时域分析

将多导体传输线（ＭＴＬ）的土壤复数阻抗拓展为土壤运算阻抗,采用Ｐａｄｅ展开法,提出了计及土壤影响的多导体传输线的时域模型,建立了该模型的时域有限差分（ＦＤＴＤ）算法。通过对计及土壤影响的架空单导体和双导体传输线的波过程计算,表明本文方法的正确性,并可以应用于超高压变电站高压母线和超高压输电线路的瞬态电磁干扰计算。     

MacCormack差分法在非均匀多导体传输线分析中的应用

在将MacCormack差分法引入传输线计算的基础上，给出了无需解耦过程的非均匀多导体传输线时域计算方法。摆脱了电容、电感、电阻、电导矩阵形式的限制。该方法是直接的时-空离散数值方法，具有二阶的计算精度。对电路本身没有任何特殊要求，并且应用过程中不需要复杂的变换，便于程序的编制。数值实验表明，利用该方法编制的通用计算程序，具有比快速傅立叶变换法高得多的效率，可以方便的用于均匀、非均匀耦合多导体传输线的计算。     

任意截面的非平行多导体传输线瞬态分析

以分析多导体传输线的时域有限差分(FDTD)法为基础,在考虑任意截面传输线分布参数无法直接计算的情况下,提出MOM-FDTD 混合方法对不平行多导体传输线进行瞬态分析。首先,利用FDTD建立多导体传输线时域差分模型,然后用MOM 法计算任意截面形状的非平行传输线的分布参数,并且与FDTD法混合进行瞬态分析计算。此算法相对于全波算法,在时间与存储空间消耗上具有很大的优势,并且满足精度要求。最后通过同轴传输线与矩形带状线的例子验证这个方法是正确有效的。     

An Analysis of Characteristics of Coplanar Transmission Lines with Finite Conductivity and Finite Strip Thickness by the Method of Lines

The method of lines (MoL) has been applied for analyzing the characteristics of various structures of coplanar transmission lines widely. But in most previous literatures, the metallizations are considered as infinitely thin or PEC(Perfect Electric Conductor). In this paper, the characteristics of coplanar transmission lines (take an example for shielding microstrip lines) with finite conductivity and finite strip thickness are analyzed by MoL and the computation results are shown.     

The method of lines for mutual coupling analysis of a finite array of patch antennas on a cylindrical stratified structure

We present an application of the method of lines (MoL) for the analysis of a finite array of microstrip patch antennas loaded with dielectric layers on a cylindrical structure. New formulas are given in cylindrical coordinates to describe multiple, stacked layers without causing an increase in the difficulty or complexity of the analysis. We show that this model is not only numerically efficient, compared with other numerical methods, but also, shows a very good accuracy with respect to experimental results and has no limitation on antenna array geometry and excitation. Finally, some numerical results for both radiation and mutual coupling are presented.     

分析周期结构的一种快速算法—直线法结合FFT和网络分解技术

本文将直线法与快速付里叶变换和网络分解技术相结合，首次提出了一种新的快速算法，这一方法首先对任意入射角平面波激励下无限周期结构的Ｈｅｌｍｈｏｌｔｚ方程进行变换，用直线法离散新方程，其阻抗元素利用ＦＦＴ进行计算，再结合网络分解技术求出电流分布。     

Full-wave analysis of radiating planar resonators with the methodof lines

The method of lines (MoL) is extended to analyze radiating planar resonators by the use of absorbing boundary conditions. For stratified layers, an equivalent network is derived to set up a system equation by simple multiplication of hybrid matrices. As an example, the complex resonant frequency of a microstrip patch is computed and compared to results achieved with the integral equation method in spectral domain. The radiation in the near-field region is depicted by a vector plot of the energy flow, given by the real part of the Poynting vector     

Analysis of microstrip structures with an inhomogeneous dielectric layer in an unbounded region

The method of lines (MoL) is used to compute the frequency dependent propagation characteristics of planar waveguides with an inhomogeneous dielectric layer. To simulate unbounded regions, absorbing boundary conditions (ABC) are used. It is shown that in this case excellent results are achieved even if the boundaries are placed very close to the dielectric edge of the structure.<>     

A generalized algorithm for the capacitance extraction of 3D VLSIinterconnects

In this paper, a generalized algorithm based upon the nonoverlapping domain decomposition method (NDDM) is presented for the capacitance extraction of three-dimensional (3-D) VLSI interconnects. The subdomains with conductors are analyzed by the finite-difference method, while the subdomains with pure dielectric layers are analyzed with the eigenmode expansion technique. The central processing unit time and memory size used by the NDDM are unrelated to the thickness of pure dielectric layers. NDDM's computing time grows as O(n) if the number of domain iterations is bounded. Also, benchmarks show that it is approximately 15 times less than those used by Ansoft's Maxwell SpiceLink. In addition, only a two-dimensional mesh is needed to analyze 3-D structures. This greatly reduces the algorithm complexity and makes it easy and straightforward to interface with layout automation software     

Method of lines for the analysis of dielectric waveguides

This paper is concerned with the application of the method of lines (MoL) to the analysis of general dielectric waveguides that are uniform along the direction of propagation, lossfree, and passive. Hybrid-mode dispersion curves, field and intensity distributions for integrated optical waveguides are presented     

Study of microstrip step discontinuities on bianisotropicsubstrates using the method of lines and transverse resonance technique

A hybrid approach, combining the method of lines (MoL) and transverse resonance technique (TRT), is presented for the analysis of microstrip step discontinuities that are printed on uniaxial or biaxial bi-anisotropic substrates. The method of lines, formulated in terms of Kronecker products, is used to determine the characteristic equation for the resonant length. The transverse resonance technique is applied to obtain the S-parameters of the junction by casting the discontinuity problem as a microwave equivalent network. Good agreement is found between results of the MoL/TRT approach and those obtained by other methods. Effects of individual tensor elements of the substrate on the scattering parameters of the discontinuity are investigated at selected frequencies. The proposed MoL/TRT approach is found to converge very fast and does not require excessive computer memory, with all computations performed on a 486DX-50 MHz PC