共查询到17条相似文献,搜索用时 109 毫秒
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在介绍离子敏场效应晶体管(ISFET)传感器的应用和基本工作原理的基础上,阐述了集成化ISFET传感器的研究现状,包括ISFET敏感膜及其制造工艺与CMOS兼容性研究、集成化读出电路、多传感器集成等方面。展望了ISFET传感器的研究趋势,认为在以下方面值得探索和研究:敏感膜是把化学变量转换为电学变量的关键;高性能读出电路的研究;集ISFET、读出电路及后端信号处理电路于一体的低功耗ISFET传感器的系统集成;多功能、智能化的多传感器集成;研究集微传感器、微执行器、信号处理和控制电路、接口电路、通信系统以及电源等于一体的微机电系统(MEMS);ISFET微传感系统的数字化集成等。 相似文献
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在介绍离子敏场效应晶体管(ISFET)传感器的应用和基本工作原理的基础上,阐述了集成化ISFET传感器的研究现状,包括ISFET敏感膜及其制造工艺与CMOS兼容性研究、集成化读出电路、多传感器集成等方面。展望了ISFET传感器的研究趋势,认为在以下方面值得探索和研究:敏感膜是把化学变量转换为电学变量的关键;高性能读出电路的研究;集ISFET、读出电路及后端信号处理电路于一体的低功耗ISFET传感器的系统集成;多功能、智能化的多传感器集成;研究集微传感器、微执行器、信号处理和控制电路、接口电路、通信系统以及电源等于一体的微机电系统(MEMS);ISFET微传感系统的数字化集成等。 相似文献
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生化微传感集成系统是目前的研究焦点,本文以在线性区和饱和区两种模式下工作的pH-ISFET作为研究对象,提出ISFET微传感器与其信号读出电路的单芯片集成,并深入研究传感机理以及与标准CMOS兼容的敏感材料制备技术.整个芯片包含ISFET/REFET微传感差分对、双模式ISFET/REFET放大器、次级差分放大、参比电极Pt、恒流源等,采用新加坡Chartered半导体集成电路公司3.3V标准CMOS工艺流片.同时进行传感器芯片的pH响应实验测试,获得53mV/pH灵敏度. 相似文献
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Chung W.-Y. Yang C.-H. Pijanowska D.G. Krzyskow A. Torbicz W. 《Electronics letters》2004,40(18):1115-1116
A new constant-current voltage driver forms a bridge-type floating drain-source follower configuration applicable to the determination of H/sup +/ ion concentration. The proposed circuit maintains the ion-selective field effect transistor (ISFET) in an accurate constant drain-source voltage and current situation with good noise rejection capability. Simulation results show accurate response for ISFET applications. The presented electronic circuit can be integrated with a ISFET-based microsystem by standard CMOS technology. 相似文献
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A new low‐voltage CMOS interface circuit with digital output for piezo‐resistive transducer is proposed. An input current sensing configuration is used to detect change in piezo‐resistance due to applied pressure and to allow low‐voltage circuit operation. A simple 1‐bit first‐order delta‐sigma modulator is used to produce an output digital bitstream. The proposed interface circuit is realized in a 0.35 µm CMOS technology and draws less than 200 µA from a single 1.5 V power supply voltage. Simulation results show that the circuit can achieve an equivalent output resolution of 9.67 bits with less than 0.23% non‐linearity error. 相似文献
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The previously reported discrete ISFET using current feedback has been redesigned in a CMOS platform with an array of ISFETs to improve the performance of the single ISFET's readout. The circuit novelty is the averaging of ISFET currents generated by a cluster of 64 ISFETs with a global current feedback. Simulation results from the 0.18 μm CMOS process also indicate improvements of high signal-to-noise ratio with power consumption to early μW. As a result, it all leads to benefit biomedical applications. 相似文献
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Novel high speed BiCMOS circuits including ECL/CMOS, CMOS/ECL interface circuits and a BiCMOS sense amplifier are presented. A generic 0.8 μm complementary BiCMOS technology has been used in the circuit design. Circuit simulations show superior performance of the novel circuits over conventional designs. The time delays of the proposed ECL/CMOS interface circuits, the dynamic reference voltage CMOS/ECL interface circuit and the BiCMOS sense amplifier are improved by 20, 250, and 60%, respectively. All the proposed circuits maintain speed advantage until the supply voltage is scaled down to 3.3 V 相似文献
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《IEEE transactions on circuits and systems. I, Regular papers》2006,53(10):2187-2193
A new power-rail electrostatic discharge (ESD) clamp circuit for application in 3.3-V mixed-voltage input–output (I/O) interface is proposed and verified in a 130-nm 1-V/2.5-V CMOS process. The devices in this power-rail ESD clamp circuit are all 1-V or 2.5-V low-voltage nMOS/pMOS devices, which are specially designed without suffering the gate-oxide reliability issue under 3.3-V I/O interface applications. A special ESD detection circuit realized with the low-voltage devices is designed and added in the power-rail ESD clamp circuit to improve ESD robustness of ESD clamp devices by substrate-triggered technique. The experimental results verified in a 130-nm CMOS process have proven the excellent effectiveness of this new proposed power-rail ESD clamp circuit. 相似文献
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《Solid-State Circuits, IEEE Journal of》1983,18(6):678-684
A CMOS subscriber line interface circuit (SLIC) that has an automatic balancing hybrid facility is presented. Some of the key system aspects of line interface circuits, such as the relation between zero-loss switching and an automatic balancing hybrid circuit, power dissipation in the line circuit, and foreign voltage protection are described first. Next, details of the SLIC LSI, which comprises a dial pulse detecting circuit and and automatic balancing hybrid circuit, are described. The LSI is implemented with CMOS switched capacitor technology and is mounted on a 20-in DIL. 相似文献
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A method for the fabrication of a completely integrated solid-state electrochemical sensor which combines a minature liquid junction reference electrode with a CMOS ISFET is presented. The reference electrode is fabricated by preferentially etching silicon to form a porous silicon frit. The CMOS process provides electrical encapsulation of the ISFET. The performance of the reference electrode and CMOS ISFET as an integrated sensor is demonstrated. 相似文献