一种基于斜率-电阻相位插值的低功耗十倍频电路北大核心

基于65 nm CMOS工艺设计了一种低功耗低成本十倍频电路。在1.2 V电源电压下，电路功耗小于0.53 mW。提出了一种低复杂度的5段斜率-电阻相位插值方法，通过对四路正交斜率信号进行电阻相位插值，在8 MHz到24 MHz的输入频率范围内，实现了可重构的十倍频电路。该电路结构简单，仅包含正交方波信号发生器、斜坡信号发生器和提出的5段斜率-电阻相位插值器，可用于低功耗、低成本的倍频场合，且具有可接受的频率偏差。在输入频率为16 MHz,输入功率为-2.0 dBm时，电路输出功率为-12.9 dBm,倍频效率为4.40%。     

一种超宽带、高线性度正交调制器

基于SiGe工艺设计了一款超宽带、高线性度的正交调制器电路,主要包含本振移相模块、混频器模块和输出模块。其中本振正交信号产生电路采用RC多相滤波器结构,在超宽带下生成正交信号,并采用限幅放大器对信号的幅度和相位进行校准;混频器采用Gilbert双平衡混频器电路结构,并使用电阻负反馈结构和电感峰化技术,可满足超宽带、高线性度、高镜像抑制的设计要求;输出模块采用有源巴伦实现差分转单端功能。芯片供电电压为5 V,工作频率范围为50 MHz～6 GHz,输出1 dB压缩点最高可达到14.7 dBm@2 GHz,边带抑制为-60 dBc,载波泄露为-44.8 dBm,噪底可低至-166 dBm/Hz。可广泛应用于各类接收机和通信系统中。     

宽带泄漏信号自适应对消器的性能

自适应对消器可以有效地消除雷达发射机宽带泄漏信号对雷达系统本身的影响。本文依据环路模型建立了描述自适应对消器工作过程的随机微分方程,求得了随机微分方程的瞬态解及其统计特性。最后导出了衡量对消器性能的干扰对消比的理论公式。     

Ka频段射频对消连续波雷达前端研制

介绍了一种全模拟Ka频段自适应射频对消技术,用于解决连续波雷达收发隔离不足的问题.该技术利用了幅度相等、相位相反矢量叠加后相互抵消的基本原理,采用毫米波解调器把泄露信号分解为I、Q信号,经有源滤波放大网络后再通过毫米波矢量调制器构造出与泄露信号等幅反相的矢量,并通过波导耦合器馈入接收通道与泄露信号叠加达到对消效果.采用此技术,研制出了一台带对消器的Ka频段单天线连续波雷达原理样机,在600 MHz对消带宽内,对消度达到25 dB以上,最大对消度35 dB.     

一种用于低功耗GNSS接收机的新型正交LMV电路

设计了一种用作GNSS接收机射频前端的正交LMV模块。通过层叠复用低噪声放大器、混频器和压控振荡器,实现了电流复用,使不同的模块共用同一偏置电流,在满足GNSS接收机性能指标的前提下,大大降低了电路功耗。采用改进的双平衡VCO负载结构,避免了本振泄漏问题,提高了电路的稳定性。基于主流0.18 μm CMOS工艺,采用Cadence Spectre软件对电路进行仿真验证。仿真结果表明,在1.3 V电源电压、输入信号为GPS L1频点的1.575 GHz射频信号下,4 MHz中频频率处测得的噪声系数为3.0 dB,转换增益为34 dB,输入3阶交调点为－20 dBm,在1 MHz处的相位噪声为－110 dBc/Hz,且功率仅为2.2 mW。     

脉冲干扰旁瓣对消器的响应

本文所讨论的是对脉冲串干扰的旁瓣对消器的响应。这种干扰是由于人为干扰或其它雷达辐射而产生的。解析了影响对消器的控制加权的微分方程,而解法与对消器的几个工作参数如环路滤波器的时间常数、环路增益、干扰功率,重复周期、脉冲的占空系数等有关。基于这里获得的结果,为了对消,可以选择最佳环路增益和时间常数来满足所给定的条件。     

L频段高稳梳状谱电路设计与实现

利用阶跃恢复二极管的强非线性特点,设计了一个输入信号频率100 MHz、输出信号频率0.9～ 1.4 GHz的梳状谱电路,经开关滤波器电路处理后可以实现6个单频点输出.梳状谱电路经优化设计和调试,以较低的驱动功率实现了模块高稳定输出.在-55℃～+85℃工作温度范围内、输入信号功率0～+3 dBm条件下,梳状谱电路驱动功率为20 dBm左右,测试模块输出信号功率变化小于1.5 dB,附加相位噪声劣化小于1 dB.     

应用于5GHz WLAN的单片CMOS频率综合器

采用中芯国际(SMIC)的0.18μm混合信号与射频1P6MCMOS工艺实现了WLAN802.11a收发机的锁相环型频率综合器,它集成了压控振荡器、双模预分频器、鉴频鉴相器、电荷泵、各种数字计数器、数字寄存器和控制等电路。基于环路的线性模型,对环路参数的优化设计及环路性能进行了深入的讨论。流片后测试结果表明,该频率综合器的锁定范围为4096～4288MHz,在振荡频率为4.154GHz时,偏离中心频率1MHz处的相位噪声可以达到-117dBc/Hz,输出功率约为-3dBm。芯片面积为0.675mm×0.700mm。采用1.8V的电源供电,核心电路功耗约为24mW。     

单旁瓣中频对消器的电路分析及实践

本文从电路实用观点出发,分析了单旁瓣对消器的连续波对消的性能、带通干扰的对消性能、对消器的过渡过程和对消环路的稳定性。介绍了一些实用电路要求及调试步序。初步进行了57.8兆赫及6兆赫二种中频对消器的实验,取得了比较满意的性能。     

传输线小反射信号正交分解和对消技术

介绍一种基于信号正交分解和对消原理消除传输线上小反射信号的技术.通过在传输线上引入两个间隔1/8波长的可调不连续性电抗,实现任意相位的小反射信号消除.对该技术的工作原理进行了描述,建立了电路的数学模型并进行了理论分析.分析结果表明,采用适当的电路形式并通过调整电路参数,可对反射信号达到近乎完全的对消,回波损耗可改善40 dB以上.仿真和实验验证了该技术的有效性和理论分析的正确性.     

A low local input 1.9 GHz Si-bipolar quadrature modulator with noadjustment

A 1.9 GHz quadrature modulator with an onchip 90° phase-shifter was fabricated using a silicon bipolar technology. This paper investigates error factors caused by a limiter amplifier. It is found that a gain enhancement technique in a phase-shifter circuit is effective in realizing an adjustment free quadrature modulator; we propose a new high-gain phase shifter circuit for this purpose. This technique employs a current mode interface and an on-chip inductor. An image-rejection ratio of over 45 dBc and a carrier feedthrough of below -40 dBc were attained at -15 dBm local oscillator power. This quadrature modulator operates at 2.7 V supply voltage. The operating frequency ranges from 1.2 GHz to 2.3 GHz. The die size of the quadrature modulator IC is 2.49 mm×2.14 mm     

UHF RFID Reader With Reflected Power Canceller

Reflected power imposes severe linearity problems to the receiver in radio frequency identification (RFID) readers. In this letter, the design and realization of a ultra high frequency RFID reader with a reflected power canceller circuit based on quadrature feedback are presented. Theory and measurements of the signal and noise in the receiver are presented as a function of incident carrier power. The receiver sensitivity is even better than without the canceller with high incident carrier power: A noise spectral density at the data band is -140 dBm/Hz at +12 dBm incident carrier power. At the same time, input compression point of +15 dBm is achieved. The dynamic range of the receiver is improved by 10 dB.     

A 3.3 V, 10 Bits, Clock-Feedthrough Compensated Switched-Current Second Order Sigma-Delta Modulator

This article presents a low-pass sigma-delta modulator for Analogue-to-Digital conversion. The circuit uses a switched-current technique which presents a well known drawback called clock feedthrough. This phenomenon induces an error on the output signal value. In order to cancel the clock feedthrough effect, we use a new method based on a current feedback loop. The circuit is designed in 0.8 μm AMS “Austria Mikro Systems” single poly CMOS process. Measurements of the modulator are performed under A/D converters characterisation system, and show 55 dB dynamic range at 2.048 MHz sampling rate with 8 kHz input frequency bandwidth. These characteristics are suitable for audio applications.     

A Wideband ΔΣ Digital-RF Modulator for High Data Rate Transmitters

A wideband software-defined digital-RF modulator targeting Gb/s data rates is presented. The modulator consists of a 2.625-GS/s digital DeltaSigma modulator, a 5.25-GHz direct digital-RF converter, and a fourth-order auto-tuned passive LC RF bandpass filter. The architecture removes high dynamic range analog circuits from the baseband signal path, replacing them with high-speed digital circuits to take advantage of digital CMOS scaling. The integration of the digital-RF converter with an RF bandpass reconstruction filter eliminates spurious signals and noise associated with direct digital-RF conversion. An efficient passgate adder circuit lowers the power consumption of the high-speed digital processing and a quadrature digital-IF approach is employed to reduce LO feedthrough and image spurs. The digital-RF modulator is software programmable to support variable bandwidths, adaptive modulation schemes, and multi-channel operation within a frequency band. A prototype IC built in 0.13-mum CMOS demonstrates a data rate of 1.2 Gb/s using OFDM modulation in a bandwidth of 200 MHz centered at 5.25 GHz. In-band LO and image spurs are less than -59 dBc without requiring calibration. The modulator consumes 187 mW and occupies a die area of 0.72 mm².     

基于802.11a标准的CMOS正交调制器和上变频器

采用0.18μm CMOS工艺,设计并实现了应用于WLAN IEEE 802.11a的正交调制器和上变频器.正交调制器在传统的Gilbert单元基础上,采用负反馈跨导放大器来提高线性度;上变频器采用LC谐振网络作混频器负载来提高增益和电压输出摆幅.测试结果表明,在1.8V电源电压下,谐振频率点的1dB压缩点P1dB为-3.6dBm,功率转换增益为-3.6dB,电流消耗大约45.8mA.     

基于FPGA和DDS的声光调制器驱动电路的实现

以La~(3+)和Nb~(5+)分别为A、B位不等价取代离子,研究了A、B位不等价离子掺杂引起的空位比对[(Pb_(0.93)La_(0.07))1-αα][(Zr1-y-zTiyNbz)1-ββ]O3(PLZTN)陶瓷性能的影响,并找出了A、B位同时掺杂取代时影响锆钛酸铅(PZT)陶瓷性能的关键因素。在该文的y、z、α、β取值范围内制备出的压电陶瓷均具有较纯净的钙钛矿结构,表现出弛豫铁电体特性。当摩尔比r(Ti)/r(Zr)=39/61,Nb在B位的摩尔分数z=0.02,空位比α/β=2/1时,陶瓷样品具有最佳的压电性能:压电应变常数d33=800pC/N,平面机电耦合系数kp=71.85%。该陶瓷样品具有较大的电致伸缩系数。以其制作的0.22mm×7.8mm×45mm压电片的横向机电耦合系数k31达0.46。该陶瓷片组装的双晶片在180V电压驱动下,其悬臂梁结构的自由端推力为32g,空载位移量为0.8mm。该材料是纺织经编机压电贾卡制造的较理想材料。     

一种应用于超高频RFID的自干扰抵消电路

提出了一种应用于超高频RFID的集成自干扰抵消电路,它主要由一个6位有源移相器、一个3位可控增益功率放大器和缓冲器组成。有源移相器采用可降位的编码方式,简化了数字逻辑。可控增益功率放大器通过采用电容补偿技术和偏置点的优化选取来提高线性度。该自干扰抵消电路在130 nm CMOS工艺下实现,采用1.5 V和3.3 V双电源供电。后仿真结果显示,针对8 dBm的自干扰信号,该电路在840~940 MHz带宽内的自干扰抑制比大于28 dB。     

A 1-V 60-μW 85-dB dynamic range continuous-time third-order sigma-delta modulator

A 1-V third order one-bit continuous-time (CT) ΣΔ modulator is presented. Designed in the SMIC mixed-signal 0.13-μm CMOS process, the modulator utilizes active RC integrators to implement the loop filter. An efficient circuit design methodology for the CT ΣΔ modulator is proposed and verified. Low power dissipation is achieved through the use of two-stage class A/AB amplifiers. The presented modulator achieves 81.4-dB SNDR and 85-dBdynamic range in a 20-kHz bandwidth with an over sampling ratio of 128. The total power consumption of the modulator is only 60μW from a 1-V power supply and the prototype occupies an active area of 0.12 mm~2.     

一种应用于无线内窥镜的2.4GHz低功耗ASK发射机

提出了一种应用于无线内窥镜系统的2.4GHz低功耗ASK发射机.为了获得高的数据传输速率,采用了基于混频器的直接上变换发射机结构.为了节省功耗,提出了一种基于电流复用技术的伪差分堆栈结构的A类功放.低功耗发射机由两部分组成:基于恒幅度锁相环(PLL)的20MHz的ASK基带调制器和直接上变换的射频电路.该设计已经采用TSMC 0.25μm CMOS工艺实现并进行了验证.测试结果表明,发射数据速率为1Mbps时,发射机的输出功率为-23.217dBm.采用单2.5V的电源供电下,低功耗发射机消耗的电流约为3.17mA.