共查询到20条相似文献,搜索用时 875 毫秒
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《电子科技文摘》2000,(10)
0015951激光退火法低温制备多晶硅薄膜的研究[刊]/刘传珍//液晶与显示.—2000,15(1).—46~51(B) 0015952超声雾化喷涂工艺及优质二氧化锡透明导电薄膜的研究[刊]/周之斌//固体电子学研究与进展.—2000,20(2),—229~233(D)0015953软损伤吸杂作用机构的分析[刊]/夏玉山//固体电子学研究与进展.—2000,20(2).—223~228(D)用透射电镜等手段观察了硅片背面原始软损伤及它在工艺热过程中的变化。分析了软损伤吸杂的作用机构:当热氧化时软损伤诱生热氧化层错,当外延生长时软损伤诱生半环形位错,硅片表面电活性区的有害杂质被吸收、沉积在这些诱生缺陷上。参3 相似文献
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研究了不同气氛下快速预热处理(RTA)后,硅片中的流动图形缺陷(FPDs)密度和随后两步热处理形成的魔幻清洁区(MDZ)之间的关系.硅片经过高温快速预热处理后,再经过800℃(4h) 1000℃(16h)常规退火,以形成MDZ.研究发现,当硅片在Ar气氛或N2/O2(9%)混合气氛下RTA预处理后,FPDs密度较低,随后热处理出现的氧沉淀诱生缺陷密度较高、清洁区较宽.对于N2/O2混和气氛,随着O2含量的增加,FPDs和氧沉淀诱生缺陷密度变小,纯O2气氛下预处理后硅片中FPDs和氧沉淀诱生缺陷密度最低.因此,可以通过调节N2/O2混合气氛中两种气氛的比例来控制空洞型微缺陷和硅片体内氧沉淀诱生缺陷的密度. 相似文献
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研究了不同气氛下快速预热处理(RTA)后,硅片中的流动图形缺陷(FPDs)密度和随后两步热处理形成的魔幻清洁区(MDZ)之间的关系.硅片经过高温快速预热处理后,再经过800℃(4h)+1000℃(16h)常规退火,以形成MDZ.研究发现,当硅片在Ar气氛或N2/O2(9%)混合气氛下RTA预处理后,FPDs密度较低,随后热处理出现的氧沉淀诱生缺陷密度较高、清洁区较宽.对于N2/O2混和气氛,随着O2含量的增加,FPDs和氧沉淀诱生缺陷密度变小,纯O2气氛下预处理后硅片中FPDs和氧沉淀诱生缺陷密度最低.因此,可以通过调节N2/O2混合气氛中两种气氛的比例来控制空洞型微缺陷和硅片体内氧沉淀诱生缺陷的密度. 相似文献
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重掺杂直拉硅单晶氧沉淀及其诱生二次缺陷 总被引:1,自引:1,他引:0
研究了重掺杂直拉硅单晶中掺杂元素硼、磷、砷、锑对氧沉淀及其诱生二次缺陷行为的影响 .实验结果表明 :重掺p型 (硼 )硅片氧沉淀被促进 ,氧沉淀密度高但无诱生二次缺陷 ;重掺n型 (磷、砷、锑 )硅片氧沉淀受抑制 ,氧沉淀密度低却诱生出层错 ;不同掺杂元素及浓度对重掺n型硅片氧沉淀抑制程度不同 ,并对氧沉淀诱生层错的形态产生影响 .讨论了重掺硅单晶中掺杂元素影响氧沉淀及其诱生二次缺陷的机理 ,并利用掺杂元素 本征点缺陷作用模型和原子半径效应模型对实验结果进行了解释 . 相似文献
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热氧化法钝化硅片的少数载流子寿命 总被引:2,自引:0,他引:2
用高频光电导衰减法 (PCD)研究了热氧化钝化对直拉硅少子寿命的影响 .在 70 0~ 110 0℃范围热氧化不同时间 (0 .5~ 4 h)对直拉硅片表面进行钝化 ,实验结果表明 ,在 10 0 0℃下热氧化对硅片表面钝化的效果最好 ;而且发现热氧化 1.5 h后硅片的少子寿命值达到最大值 ,接近于其真实值 ,而随着热氧化时间的延长 (>1.5 h)少子寿命将会降低 ,这是由于直拉硅中过饱和的氧会沉淀下来形成氧沉淀 ,成为新的少子复合中心 . 相似文献
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Cellere G. Valentini M.G. Pantisano L. Cheung K.P. Paccagnella A. 《Electron Device Letters, IEEE》2003,24(6):393-395
High-temperature anneal in hydrogen ambient is performed at the end of a CMOS manufacturing process to recover the process-induced defects. The authors focus on the recovery and wearout of thin gate oxides (3.3 nm) during repetitive stress-anneal-stress cycles. Thermal annealing at 450 /spl deg/C leads to detrapping phenomena and to the complete recovering of electrically induced defects. On the other hand, the same thermal annealing is not capable of fully recovering the process-induced damage. The kinetic of defect recovering (and not the number of defects annealed out) strongly depends on the amount of latent damage. 相似文献
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硅中离子注入掺杂原子的增强扩散系数的分布 总被引:1,自引:1,他引:0
本文利用离子注入掺杂原子在热退火过程中的浓度分布SIMS数据计算了增强扩散系数的深度分布.这种增强扩散系数的分布反映了离子注入产生的损伤和缺陷分布及热运动特性 相似文献
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<正> 浅结制备是超大规模集成电路发展的关键技术之一。硅中硼、磷等杂质注入,在退火时发生异常扩散,使浅结的控制困难。异常扩散是一个瞬态快速扩散过程。对于硼,在退火开始时,杂质分布尾部推移极快,随之减慢,恢复正常扩散。这一过程用衰变时间表征。 相似文献
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Dynamic random access memory (DRAM) reliability is investigated for future DRAMs where small geometrical devices are used together with new materials and novel process technologies. Among the several items of DRAM reliability, the most important aspect to consider for DRAM reliability is infant mortality which is caused by process-induced defects including random defects. Since the process-induced defects are strongly dependent on process technology, it is inevitable to minimize process-induced defects by developing new process technology. However, whenever new process technology is introduced, new screening techniques or methods are necessary for suppressing infant mortality. The degradation of pMOSFET due to buried-channel pMOSFET during burn-in stress and soft error rate due to α-particle and cosmic ray irradiation become concerns as device dimension shrinks. However, it cannot be limitations of DRAM reliability because pMOSFET degradation due to hot electron induced puchthrough can be suppressed by new layout of pMOSFET, and the soft error events can be overcome by soft error resistant device structure and proper material choices. From these considerations, it can be expected that the advances of DRAM technology generation not only improve the device performance but also enhance the reliability. 相似文献
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《Electron Devices, IEEE Transactions on》1981,28(10):1198-1199
Alpha particles with sufficiently high energy cause a degradation of the refresh time as well as soft errors in dynamic MOS RAM. Physical defects induced by the radiation damage of alpha particle irradiation increase the generation current of the storage cell. The increasing rate of the generation current by the irradiation was 8.89 × 10-5pA/alpha. 相似文献
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The effect of both RIE and high-density nonuniform magnetically enhanced reactive ion etching (MERIE)-type plasmas on the properties of thin oxide (11–13 nm) MOS capacitors as well as FETs without gate has been investigated. The results reveal the vulnerability of the oxide and its interface with Si to the plasma process — the interface is much more sensitive. The creation of defects in the form of fixed oxide charge, bulk traps, slow states and interface states is found. The damage level is a function of both the discharge conditions (including plasma exposure time) and the initial Si-SiO2 structure parameters, the plasma conditions having a priority impact. The damage process is very rapid particularly in the first seconds (up to 30 s) of plasma exposure. The effects become highly process dependent as the plasma time increases. The plasma induced defects degrade the inversion carrier mobility and change the dominant scattering mechanism in the inversion channel. The damage leads to an excess leakage current and decreases the breakdown fields. A strong linear correlation between plasma induced leakage current and plasma created positive charge is detected. It is established that the build-up damage depends on plasma nonuniformity, but the non uniformity is neither the only nor the dominating factor. The nature of process induced defects and the influence of plasma components are discussed. It is proposed that generated interface states are mainly attributed to VUV and ion bombardment, whereas the high values of positive oxide charge are due to the charging effect. The type of plasma induced defects (oxide traps or interface states) and the energy distribution of interface states strongly depend on the relative contribution (or domination) of the different plasma components.A room temperature annealing of MERIE-type plasma induced interface states is established. The reduction depends only on the starting postplasma treatment level of interface states and the effects responsible for this reduction take place very close to the Si-SiO2 interface. (The fixed oxide charge is stable and it does not change at all.) The process seems to be controlled by moisture transport to the Si-SiO2 interface.By means of X-ray photo electron spectroscopy it is found that 5 min exposure of thin thermal SiO2 to N2-RIE mode plasma causes structural modifications, which manifest only as a deterioration of oxide quality without actual nitration of the oxide. The presence of a small constant amount of SiO species through the oxide and a broadening of Si-SiO2 interface region are detected.The nature of the electrically active plasma induced defects by both plasma processes — RIE and MERIE is equal — the bond defects in the oxide and at the interface: the oxide charge is associated with E′ centers and the interface states with Pb centers. 相似文献
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