单向耦合VCSEL偏振模的同步与编码

为了研究单向耦合垂直腔面发射激光器系统的混沌动力学及其在通信中的应用,采用数值仿真的方法,理论研究了两个单向耦合的垂直腔面发射激光器偏振模的同步特性,并通过对发射激光器偏振态相位的调制实现了该系统的编码。结果表明,主激光器和从激光器相应模式间可以获得高性能的同步,而且存在两个明显的同步区域——完全同步和注入锁定同步。加载的数字信息也可以在从激光器每个偏振分量中还原,这表明可以利用单模或多横模垂直腔面发射激光器进行多信道混沌通信。     

延时反馈双环掺铒光纤激光器互注入系统中的混沌同步研究

分析了延时反馈双环掺铒光纤(EDF)激光器互注入 系统的动态特性,并引入一种量化时间序列复杂度的评 价方法——排列熵(PE,permutation entropy),对激光器输出状 态和混沌同步质量与复杂度的关系进行讨论。研究表明,通过调节反馈 延迟时间和反馈强度可控制系统的输出状态,使系统输出为周期态和混沌态,而且利用PE熵计算激光器 输出信号的复杂度相对于分岔图同样能直观准确的反映出系统动态行为;在激光器独立工作 情况下,输出 信号的混沌区域内夹杂有较多的周期态,而在互注入情况下,混沌区域增宽且较为平坦,同 时输出信号复 杂度的PE值较高,互注入系统有利于参数选择的范围和提高混沌通信系统的安全性;提 高注入强度可 得到高质量的混沌同步,两个激光器在同步和不同步时输出信号的复杂度是 不同的,可见 研究激光器输出信号的复杂度可成为分析混沌同步质量的一种参考。     

激光混沌通信系统同步及调制的研究

利用具有外腔反馈的F-P半导体激光器构成开环结构的混沌通信系统。对该系统中存在的同步类型及性能进行分析。结果证实开环系统中在弱注入时达到完全同步,在强注入时达到等时同步,强注入时使用系统增益校正后的同步误差能够更准确反映同步效果。使用混沌调制方法实现混沌载波对信息的加密,研究调制性能。结果表明校正的相减解调法以及大注入系数条件可以恢复出更好的信息。     

多变量耦合实现双环掺铒光纤激光器混沌同步

根据双环掺铒光纤激光器的理论模型,提出多变量单向耦合法实现混沌同步,对主从系统模型进行数学推导,研究不同参数条件下双环掺铒光纤激光器的混沌同步,得到实现混沌同步的条件,并在Simulink平台下动态仿真。结果表明,衰减系数不同的两个双环掺铒光纤激光器,主激光器通过定向耦合器驱动从激光器,主从系统可以实现精确混沌同步,且随着反馈强度的增大,实现系统混沌同步的时间越短,反馈强度的取值范围由衰减系数和耦合系数确定;选取不同的系统初值,主从系统可实现混沌同步,系统初值对达到混沌同步时间的影响可忽略不计;在主从系统中引入随机高斯噪声,主从系统仍可实现较好的混沌同步。     

Po1SK调制混沌保密光通信的实验研究

将Po1SK技术应用到混沌保密光通信中.利用半导体光放大器(SOA)构成光纤环状激光器产生偏振态混沌信号,并利用SOA的互相位调制(XPM)效应,通过信号光输入到激光器中,将传输数据动态地调制到混沌信号的偏振态上,实现数据保密通信.对Po1SK混沌保密通信的基本原理进行了说明,给出了实验系统基本性能的测试结果,并进行了讨论.     

半导体激光器的混沌驱动同步

利用混沌驱动同步法研究了在电流调制下的半导体激光器的混沌同步。首先数值计算了系统最大Lyapunov指数随调制强度的变化情况,确定了激光器处于混沌态的参数区间。然后分别实现了同地激光器系统和异地激光器系统的混沌驱动同步。响应激光器间相关系数的数值计算表明,两种激光器系统均能达到很好的混沌同步。以三个响应激光器为例,将响应系统推广到多个激光器,并且实现了两种激光器系统的混沌同步。     

信号调制延时光反馈混沌系统的多路复用通信

为了研究信号调制延时的光反馈与光注入半导体激光器激光混沌系统的多路复用通信,采用数值仿真的方法,通过支路用户信号对相应支路延时进行调制实现对信号的编码,然后利用混沌同步和互相关检测进行解码,成功实现了3个用户1Gbit/s信号的复用与解复用,分析了有效解码的条件及产生误码的主要原因。这一结果对于探讨用户数量更多、传输速率更快的混沌复用通信是有帮助的。     

半导体激光器混沌双向保密通信系统理论研究

提出外部光注入半导体激光器激光混沌全光耦合-反馈同步系统，进行激光器系统稳定性动力学分析并计算出最大Lyapunov指数，导出系统的同步误差扰动方程以及系统有混沌隐藏编码时的同步误差公式和解调公式，数值证明并模拟实现了系统的混沌同步，分析同步瞬态响应和噪声影响，该系统具有较强的抗干扰能力。模拟具有正弦调制信号的调制频率0．2GHz混沌模拟通信和数字信号调制速率0．2Gb／s的混沌数字通信以及调制速率0．05Gb／s混沌键控通信的应用，特别分析了系统解码特性和调制带宽，系统无论是在时域还是在频域，都具有非常好的保密性，该系统可以作为混沌双向保密通信使用。研究表明系统准许在一定范围内可以有参数失配，系统的实际应用是有可能的。     

太赫兹量子级联激光器光注入特性

基于三能级速率方程,研究了独立运行、主从注入和相互注入太赫兹量子级联激光器(THz-QCLs)的相对强度噪声和调制特性。在自由运行情况下,THz-QCL的自发辐射噪声在低频时表现出白噪声特性。与传统的半导体激光器不同,在低频区没有对应于弛豫振荡的共振峰。主从注入可以有效降低THz-QCLs噪声20 dB,提高THz-QCLs低噪声工作的效率。对于互注入THz-QCLs,即使在锁相区,噪声也明显高于自由运行情况。通过应用注入锁定方案,与直接调制方案相比,可以大大增加调制带宽。     

半导体光放大器的偏振调制特性研究

首先理论分析了半导体光放大器的非线性偏振调制（PolM）效应,导出了稳态条件下SOA的偏振转换矩阵。通过数值仿真,描述了包括非线性自偏振调制（SPolM）、互偏振调制（XPolM）导致的偏振态在庞加球上的变化形态。计算结果表明,SOA偏振调制效应表现为偏振旋转特性,偏振旋转的大小由入射光强和偏振态决定,旋转结果表现为输出光中的TM模分量增加,而TE模分量下降。文章同时讨论了SOA驱动电流变化对PolM效应的影响以及由其引起的电光偏振调制（IPolM）效应,并仿真得出了电流变化导致的输出光偏振态的变化轨迹。     

两台多模激光场强度和相位的混沌同步

对空间耦合的两台多模激光场的强度和相位的动力学行为进行了理论分析.当系统的损失受到调制时,在一定的参数范围内,两台激光输出的总强度之间会出现很好的混沌同步,两台激光的对应模式之间也出现相应的混沌同步,但不同模式之间则是完全的混沌状态,每台激光的各个模式强度之间存在模式竞争现象.每台激光场不同模式的相位和相位差之间出现有趣的关系,与强度的混沌同步存在一定的联系.     

单向耦合半导体激光器之间的混沌同步研究

研究了单向耦合半导体激光器之间的混沌同步。通过计算两个单向耦合的半导体激光器模型的Lyapunov指数,确定了耦合强度的取值范围。进一步设计了耦合控制器,使响应系统的状态变量精确同步于驱动系统。仿真模拟结果表明,该方法可快速有效地实现半导体激光器的混沌同步。     

泵浦调制光纤激光器中混沌产生和同步的研究

分析了泵浦调制掺铒光纤环形激光器中混沌产生以及同步的理论模型。构建了双环掺铒光纤环形激光器的实验系统。通过调节泵浦功率、调制频率和可调谐滤波器，可以产生不同波长的混沌信号，并实现混沌的同步。     

Characteristics of chaos synchronization in semiconductor lasers subject to polarization-rotated optical feedback

We numerically investigate the detailed characteristics of chaos synchronization in semiconductor lasers subject to polarization-rotated optical feedback. The emission of the dominant TE mode of a drive laser is rotated 90 deg and fed back to the laser with time delay. The polarization-rotated TE mode is also injected with time delay into the TM mode of a second laser. Two types of synchronization with different time-lags are found, as in the case for synchronization in semiconductor lasers with nonrotated optical feedback. However, a significant difference to the nonrotated optical feedback case is that neither of the two types of synchronization requires matching of optical carrier frequency between the two lasers.     

Impacts of mismatched intrinsic parameter on leader-laggard synchronization between two mutually coupled VCSELs

Based on spin-flip model (SFM),the impacts of mismatched intrinsic parameter on leader-laggard chaos synchronization between two mutually coupled verticalcavity surface-emitting lasers (VCSELs) have been investigated numerically.Results show that,for two VCSELs with identical intrinsic parameter,the switching point of leader-laggard caused by continually varying frequency detuning or injection rate detuning is located at zero frequency detuning or zero injection rate detuning,which indicates that the VCSEL with higher frequency or subject to lower injection level plays a leader role.However,for two VCSELs with mismatched intrinsic parameter,the switched point of leader-laggard will deviate from zero frequency detuning or zero injection rate.Therefore,compared with the results obtained under matched intrinsic parameter,the opposite results have been observed in the range between zero detuning and switching point.Additionally,the offsets of switching point induced by different intrinsic parameters are different,and the influence of line-width enhancement factor is found to be the most significant.     

Identification of the optimum time-delay for chaos synchronization regimes of semiconductor lasers

It is shown that the optimum correlation for chaos synchronization of master-slave semiconductor lasers occurs at a delay time that is sensitive to both the injection strength and the frequency detuning of the driving field. This effect may be overlooked if the correlation function is not evaluated globally. The correlation function has been used as the de facto method for quantitatively determining the degree of synchronization achieved between unidirectional coupled chaotic semiconductor lasers, see for example . The correlation function is a continuous function of the delay time but is normally evaluated at only two delay times. It is shown that this approach can cause a misidentification of the dominant synchronization process and can also mask important temporal fluctuations in the nature and quality of the chaos synchronization. In essence, two factors contribute to the potential for misidentification, the first is the inherent small time shift required to obtain the optimum correlation and the second is the quasi-periodicity that is present in certain chaotic regimes. This paper shows that a reevaluation of some of the published numerical studies of chaos synchronization is necessary.     

Optical Chaotic Communication Using Generalized and Complete Synchronization

We propose a secure optical communication system based on the principles of generalized and complete chaotic synchronization. A transmitter and a receiver both composed by two chaotic external-cavity semiconductor lasers are coupled in a master-slave configuration to provide generalized synchronization, while the master lasers in the transmitter and in the receiver are completely synchronized through the synchronization channel via an optical fiber. A message is added to the transmitter slave laser and sent to the receiver through the information channel to be compared with the output of the receiver slave laser. The system is robust to a small mismatch of the laser parameters or of the coupling between the master and slave lasers, unavoidable in a real system, and can even enable a good communication up to a 5 Gb/s transmission rate using the chaos masking encryption method, when the master laseres are coupled bidirectionally.      

One-to-Many and Many-to-One Optical Chaos Communications Using Semiconductor Lasers

A theoretical construction of one-to-many (OTM) and many-to-one (MTO) chaos synchronization communications using semiconductor lasers is presented. One center laser provides strong injections (strong link) to other side lasers, and the side lasers also provide weak injections (weak link) to the center one. Simulation results show that the side lasers synchronize with the center laser through injection-locking. In addition, messages transmitted via the strong links or the weak links experience strong chaos pass filtering, enabling us to realize OTM and MTO communications.     

Theoretical analysis of longitudinal mode coupling in external cavity semiconductor lasers

The single longitudinal mode behavior in long external cavity semiconductor lasers is discussed. Experimentally, the laser exhibits a single frequency oscillation even for an external cavity length of 100 cm. The mode selectivity of a composite cavity is shown to be insufficient to explain the experiments. Longitudinal mode coupling in semiconductor lasers is found to arise from an interference effect between the modes on the interband transition probability of electrons. Mode coupling equations are derived, which indicates that the single mode oscillation in long external cavity semiconductor lasers is brought about when the coupling strength goes beyond a critical value. It is shown that the effect of the hole burning in the external cavity semiconductor lasers is similar to that in the solitary laser.