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环行器对低噪声放大器性能的改善 总被引:1,自引:1,他引:0
基于网络S参数理论,分析了环行器对低噪声放大器性能的影响。设计了一种工作在4.3~5.1GHz的微波晶体管低噪声放大器和铁氧体带线Y结环行器,数值仿真对比了环行器接入前后低噪声放大器的驻波比、稳定性和增益平坦度性能。结果显示接入环行器可以改善放大器的输入匹配,增加稳定性和提高增益平坦度,是一种提高低噪声放大器性能的有效方法。 相似文献
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3~10GHz SiGe HBTs超宽带低噪声放大器的设计 总被引:3,自引:2,他引:1
根据UWB(Ultra-wideband)无线通信标准.提出了一款超宽带低噪声放大器并进行了设计.该放大器选用高性能的SiGe HBTs,同时采用并联和串联多重反馈的两级结构,以达到超宽频带、高增益、低噪声系数以及良好的输入输出匹配的目的.仿真结果表明,放大器在3-10 GHz带宽内,增益.S21高达21 dB,增益平坦度小于1.5 dB,噪声系数在2.4~3.3 dB之间.输入输出反射系数(S11和S22)均小于-9 dB,并且在整个频带内无条件稳定.所有结果表明该LNA性能良好. 相似文献
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采用有源电感,设计了一款增益可调且平坦的超宽带低噪声放大器(FTG UWB-LNA)。在输入级,采用具有新型偏置电路和RLC反馈的共基-共射放大器来实现良好的宽带输入阻抗匹配;在放大级,采用由新型有源电感与达林顿结构构成的组合电路,来实现增益的可调性、平坦化和幅度提升。在输出级,采用电阻并联和电流镜偏置的共集放大器,来实现良好的输出阻抗匹配。基于WIN 0.2μm GaAs HBT工艺库,对FTG UWB-LNA进行验证,结果表明:在1-6GHz频带内,增益(S21)可以在21.16dB-23.9dB之间调谐,最佳增益平坦度达到±0.65dB;输入回波损耗(S11)小于-10dB;输出回波损耗(S22)小于-12dB;噪声系数(NF)小于4.08dB;在4V的工作电压下,静态功耗小于33mW。 相似文献
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低噪声放大器是超宽带接收机系统中最重要的模块之一,设计了一种可应用于3.1~5.2GHz频段超宽带可变增益低噪声放大器。电路输入级采用共栅结构实现超宽带输入匹配,并引入电流舵结构实现了放大器的可变增益。仿真基于TSMC 0.18μm RF CMOS工艺。结果表明,在全频段电路的最大功率增益为10.5dB,增益平坦度小于0.5dB,噪声系数小于5dB,输入反射系数低于-15dB,在1.8V电源电压下,功耗为9mW。因此,该电路能够在低功耗超宽带射频接收机系统中应用。 相似文献
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提出了一种基于共源共栅及电阻并联反馈结构的超宽带低噪声放大器(LNA)。在3~10GHz的工作频段范围内,采用电阻并联反馈和π型匹配网络结构,实现宽带输入匹配,并有效减小整个电路的噪声系数。利用共源共栅输出漏极的并联峰化技术,实现平坦的高频增益及噪声的有效抑制。采用源极电感(Ls)负反馈及晶体管M3构成的源极跟随器,提高电路的线性度和输出匹配。基于TSMC 0.18μm RFCMOS工艺库,采用Cadence Spectre RF,对LNA原理图和版图进行仿真。仿真结果显示,该LNA的S11和S22均小于-10dB,S12小于-32dB,S21为11.38±0.36dB,噪声系数为3.37±0.2dB,P1dB和IIP3分别为-9.41dBm和-2.7dBm。设计的LNA在带宽内具有良好的输入输出匹配、较好的反向隔离度及线性度、高且平坦的增益和低且平坦的噪声系数。 相似文献
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《Circuits and Systems II: Express Briefs, IEEE Transactions on》2006,53(8):687-691
A current feedback amplifier (CFA) has good high-speed properties but its performance is very dependent on interconnect designs, particularly its feedback interconnect design. In this brief, effects of the location of a feedback resistor in the feedback interconnect design of a CFA are analyzed in the frequency domain. A transfer function of a CFA is derived, and frequency responses are simulated by varying the location of a feedback resistor in the transfer function. Then, experiments are carried out with test circuits consisting of CFAs with diverse locations. It can be seen that further distance of the resistor to the inverting input of the CFA results in larger distortion of the CFA's frequency response. This result is true even if the total length of the feedback interconnect is constant. 相似文献
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The fabrication and performance of the first monolithically integrated In0.53Ga0.47As JFET voltage-tunable transimpedance amplifier for use in InP-based optoelectronic integrated circuits are reported. A narrow-gate transistor is used as an active feedback resistor. The two-stage voltage amplifier has a voltage gain of 10.7 and a bandwidth of 350 MHz. The closed-loop transimpedance of the amplifier is tunable from 10 to 24 kΩ by controlling the gate bias of the feedback transistor 相似文献
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In this paper, two circuits for realizing floating inductor (FI), floating capacitor (FC) and floating frequency-dependent negative resistor (FDNR) simulators depending on the passive component selection are introduced. Both of the developed circuits employ a single active device called modified current feedback operational amplifier (MCFOA) and a minimum number of passive elements. The FIs and FCs use a grounded capacitor thus the developed circuits are very suitable for fully integrated circuit (IC) design. Also, the proposed circuits require no critical passive component matching conditions and/or cancellation constraints. The simulation results using SPICE program are also given to verify the theory to exhibit the performance of the first circuit. 相似文献
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MUHAMMAD TAHER ABUELMA' ATTI RASHA HUSSAIN ALMASKATI 《International Journal of Electronics》2013,100(4):611-615
Two novel voltage( current) controlled oscillator circuits are presented. Each circuit uses a single operational amplifier, a single operational transconductance amplifier, and either a single resistor or a single capacitor. In both circuits the frequency of oscillation can be adjusted by changing the biasing voltage( current) of the operational transconductance amplifier. Experimental results are included 相似文献
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读出电路的注入效率是决定紫外焦平面探测器性能的重要因素。基于GaN基p-i-n结构日盲紫外探测器以及CTIA结构读出电路的等效模型,对探测器信号读出的电荷注入效率进行了分析,得到了注入效率的表达式。分析了注入效率与积分时间、探测器等效电阻、探测器等效结电容、CTIA电路中运算放大器增益的依赖关系,并指出了放大器增益是有效影响注入效率的重要可控因素之一,可以用提高增益的方法获得更大的注入效率。设计了几种不同增益的运算放大器电路,并分别构成CTIA结构读出电路。采用GF 0.35 m 2P4M标准CMOS工艺设计电路版图并进行流片。将紫外探测器分别连接至具有不同放大器增益的CTIA读出电路并进行测试,通过对比注入效率的理论分析结果与实际测试结果,可以得知,注入效率的理论分析与实验结果吻合较好。 相似文献
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Yong-an Li 《AEUE-International Journal of Electronics and Communications》2012,66(7):587-592
The paper presents a series of basic circuits based on CFTAs (current follower transconductance amplifier), which contain amplifier, lossless integrator, first-order universal current-mode filter, simulation resistor, negative resistance converter, gyrator, capacitor multiplier, and frequency-dependent negative resistance circuit. Having used canonic number of grounded capacitors and resistors, the circuits are easy to be integrated and the parameters of the circuits can be adjusted electronically by tuning bias currents of the CFTAs. It is noted that the results of circuit simulations are in agreement with theory. 相似文献
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提出了一种用于PDIC的跨阻放大器.电路由三级相同的推挽放大器级联而成,每级均采用一动态电阻对负载进行补偿,以提高放大器的相位裕度.反馈电阻由一栅极受控的PMOS管替代,避免了大尺寸多晶硅电阻引入的附加相移,增加了电路的稳定性.采用XFAB 0.6μm CMOS工艺提供的PDK,在Cadence Spectre环境下进行电路设计、仿真验证.仿真结果表明,电路的增益、带宽及稳定性均得到满意结果.Abstract: Presented is a transimpedance amplifier for PDIC.The designed amplifier is configured on three identical push-pull amplifier stages that use an active load compensated by an active resistor to improve the phase margin of the amplifier.The feedback resistor is replaced by a PMOS transistor which is biased by the gate voltage.The replacement not only avoids the phase-shift introduced by the large ploy-resistor but improves the stability performance of the transimpedance amplifier.Based on XFAB's 0.6 μm CMOS,circuit design and simulation were performed by using Cadence Spectre.The simulation results show that the gain,bandwidth and stability of the amplifier all achieve good performance. 相似文献
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A 200-V high-voltage amplifier with a 50-kHz bandwidth is built in a 10-V trench-isolated CMOS process with complementary high-voltage transistors. The high-voltage amplifier uses parasitic field-oxide transistors to dc stabilize the input-output voltage transfer characteristic. Use of parasitic field-oxide transistors for output voltage sensing provides only a small capacitive output load and eliminates the need for high-voltage resistor feedback networks. By removing resistor feedback networks, compact and low-power high-voltage amplifiers may be realized for a certain class of applications. 相似文献