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半绝缘GaAs光电导开关的击穿特性 总被引:11,自引:1,他引:10
研究了在不同触发条件下半绝缘GaAs光电导开关的击穿特性 .当触发光能量和偏置电场不同时 ,半绝缘GaAs光电导开关的击穿损坏程度也不同 ,分别表现为完全击穿、不完全击穿和可恢复击穿三种类型 .通过对击穿实验结果的分析认为 ,电子俘获击穿机制是导致半绝缘GaAs光电导开关击穿损坏的主要原因 .偏置电场和陷阱电荷所产生热电子的数量和动能决定了Ga—As键的断裂程度 ,Ga—As键的断裂程度则反映半绝缘GaAs光电导开关的击穿类型 相似文献
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Gradinaru G. Madangarli V.P. Sudarshan T.S. 《Electron Devices, IEEE Transactions on》1994,41(7):1233-1238
New experimental results on surface flashover are reported for high field silicon-dielectric systems. Different conditions of the lateral surface, contacts and ambient dielectrics have been studied. The strong influence of the semiconductor quality, and that of the dielectric properties, on the prebreakdown and breakdown response of the system, is demonstrated. All experimental results strongly support the conclusion that surface flashover in silicon systems is a physical process totally different from semiconductor surface breakdown. This conclusion has important practical application in the improvement of the performance of photoconductive power switches, severely limited by premature breakdown effects 相似文献
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Senpeng Sheng Spencer M.G. Xiao Tang Peizhen Zhou Harris G.L. 《Electron Device Letters, IEEE》1997,18(8):372-374
The first cubic silicon carbide (3C-SiC) photoconductive switches were fabricated from polycrystalline 3C-SiC. The switches had a dark resistivity of 106 Ω/cm. A breakdown field of 250 kV/cm and a peak photocurrent density of 10 kA/cm2 through the switch were obtained. The ratio of off-resistance to on-resistance of the switch reached up to 105. The photocurrent had a pulse width as narrow as 15 ns. The trigger gain of the switch was 4.7 相似文献
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Measurements of the wavelength, signal frequency, and position sensitivities of GaAs field effect transistors used as photoconductive detectors are presented. Switching of the optical sensitivity by means of both the drain and gate voltages are demonstrated. The former method can provide the basis for employing such photoconductive detectors as optoelectronic wide-band switches. The observed properties of the field effect transistor (FET) devices studied shows that the design of photoconductive optoelectronic switches will involve compromises between sensitivity and isolation in choosing the operating wavelength, and among frequency response, power consumption, and physical size in choosing the physical layout of the device. 相似文献
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GaAs光导开关暗态击穿原因分析 总被引:1,自引:0,他引:1
光导开关(PCSS)在暗态耐压测试中耐压值低于理论值.根据GaAs材料特性,分析了暗态下光导开关的击穿机理.指出碰撞电离与电流控制负微分迁移率效应是导致开关击穿的直接原因.使用Silvaco半导体仿真软件对模型进行了模拟计算,结果表明温度显著影响电场、载流子浓度分布,引起碰撞电离等效应加剧,造成器件耐压值偏低.仿真结果与实验值基本相近,室温下耐压水平为33~40 kV/cm.光导开关击穿特性与温度密切相关,改善光导开关散热条件可提高开关耐压水平. 相似文献
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超短脉冲光电导开关的全波分析 总被引:4,自引:1,他引:3
本文采用时域有限差分法直接求解包含传导电流的三维麦克斯韦方程组,对超短脉冲光电导开关进行全波分析,分析中考虑了静电场影响,采用了比较精确的光电导数学模型。本文还讨论了开关输出信号的模式组成和激光脉冲能量、脉宽对开关性能的影响,并给出了光电导开关响应在不同时刻的三维图形。 相似文献
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用1553nm飞秒光纤激光器触发半绝缘GaAs光电导开关的实验表明,当光电导开关处于3.33~10.3kV/cm的直流偏置电场并被脉冲宽度200fs且单脉冲能量0.2nJ的激光脉冲照射时,开关表现为线性工作模式,开关输出峰值电压为0.8mV.分析表明,开关对波长为1553nm触发激光脉冲表现出的弱光电导现象起因于半绝缘GaAs材料EL2深能级的作用. 相似文献
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The picosecond photoconductive switches are developed and used to detect the pulse laser waveform. By using the photoconductive switches, an novel lab model of ultra-wide band(UWB) radar is also developed. The experimental results are given to show the performances of the switches and the UWB radar. 相似文献
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基于转移电子效应提出半绝缘光电导开关延迟偶极畴工作模式,理论分析了强场下开关的周期性减幅振荡.指出开关的周期性减幅振荡是由于外电路的自激振荡和开关的转移电子振荡共同作用引起的.开关的偏置电场在交流电场的调制下,当畴到达阳极时,开关电场下降到低于耿氏阈值电场ET而高于维持电场ES(维持畴生存所需的最小电场),开关将工作于延迟偶极畴模式.进而从理论和实验两方面指出半绝缘GaAs光电导开关是一种光注入畴器件,光生载流子的产生使得载流子浓度与器件长度乘积满足产生空间电荷畴所需的条件. 相似文献
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基于转移电子效应提出半绝缘光电导开关延迟偶极畴工作模式,理论分析了强场下开关的周期性减幅振荡.指出开关的周期性减幅振荡是由于外电路的自激振荡和开关的转移电子振荡共同作用引起的.开关的偏置电场在交流电场的调制下,当畴到达阳极时,开关电场下降到低于耿氏阈值电场ET而高于维持电场ES(维持畴生存所需的最小电场),开关将工作于延迟偶极畴模式.进而从理论和实验两方面指出半绝缘GaAs光电导开关是一种光注入畴器件,光生载流子的产生使得载流子浓度与器件长度乘积满足产生空间电荷畴所需的条件. 相似文献
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Ali M.E. Geary K. Fetterman H.R. Han S.K. Kang K.Y. 《Microwave and Wireless Components Letters, IEEE》2002,12(10):369-371
We demonstrate a novel technique for highly localized injection of millimeter waves in ultrafast devices that combines optical heterodyning and near-field optics. The technique relies on evanescent coupling of two interfering lasers to a submicron area of a device by means of a near-field fiber optic probe. Scanning measurements show the dc and ac photoresponses of two ultrafast device structures, namely low-temperature GaAs photoconductive switches and InP-based high electron mobility transistors. The response characteristics were rich in structures that revealed important details of device dynamics. 相似文献
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本文对利用超短激光脉冲触发半导体光导开关产生超短电磁脉冲的装置、器件、材料以及应用方面的研究状况进行了介绍。 相似文献