0.14 THz 10 Gbps无线通信系统

太赫兹通信由于其固有的宽带特性,在Gbps以上的高速无线通信领域受到广泛关注。本文描述了一种工作在0.14 THz频段的无线通信系统,传输速率达10 Gbps。该系统基于超外差结构,中频采用数字信号处理技术进行16QAM高阶数字信号调制解调,依靠肖特基二极管次谐波混频技术实现从中频到太赫兹信号的频谱搬移。目前该系统已经通过了500 m 10 Gbps距离无线传输实验验证,通信频段为133.8 GHz～137.4 GHz,带宽3.6 GHz,发射功率0 dBm,传输误码率低于10-6。     

16‐QAM‐Based Highly Spectral‐Efficient E‐band Communication System with Bit Rate up to 10 Gbps

This paper presents a novel 16‐quadrature‐amplitude‐modulation (QAM) E‐band communication system. The system can deliver 10 Gbps through eight channels with a bandwidth of 5 GHz (71‐76 GHz/81‐86 GHz). Each channel occupies 390 MHz and delivers 1.25 Gbps using a 16‐QAM. Thus, this system can achieve a bandwidth efficiency of 3.2 bit/s/Hz. To implement the system, a driver amplifier and an RF up‐/down‐conversion mixer are implemented using a 0.1 µm gallium arsenide pseudomorphic high‐electron‐mobility transistor (GaAs pHEMT) process. A single‐IF architecture is chosen for the RF receiver. In the digital modem, 24 square root raised cosine filters and four (255, 239) Reed‐Solomon forward error correction codecs are used in parallel. The modem can compensate for a carrier‐frequency offset of up to 50 ppm and a symbol rate offset of up to 1 ppm. Experiment results show that the system can achieve a bit error rate of 10^?5 at a signal‐to‐noise ratio of about 21.5 dB.     

A Single Transistor‐Level Direct‐Conversion Mixer for Low‐Voltage Low‐Power Multi‐band Radios

A CMOS direct‐conversion mixer with a single transistor‐level topology is proposed in this paper. Since the single transistor‐level topology needs smaller supply voltage than the conventional Gilbert‐cell topology, the proposed mixer structure is suitable for a low power and highly integrated RF system‐on‐a‐chip (SoC). The proposed direct‐conversion mixer is designed for the multi‐band ultra‐wideband (UWB) system covering from 3 to 7 GHz. The conversion gain and input P1dB of the mixer are about 3 dB and ?10 dBm, respectively, with multi‐band RF signals. The mixer consumes 4.3 mA under a 1.8 V supply voltage.     

16‐QAM OFDM‐Based W‐Band Polarization‐Division Duplex Communication System with Multi‐gigabit Performance

This paper presents a novel 90 GHz band 16‐quadrature amplitude modulation (16‐QAM) orthogonal frequency‐division multiplexing (OFDM) communication system. The system can deliver 6 Gbps through six channels with a bandwidth of 3 GHz. Each channel occupies 500 MHz and delivers 1 Gbps using 16‐QAM OFDM. To implement the system, a low‐noise amplifier and an RF up/down conversion fourth‐harmonically pumped mixer are implemented using a 0.1‐μm gallium arsenide pseudomorphic high‐electron‐mobility transistor process. A polarization‐division duplex architecture is used for full‐duplex communication. In a digital modem, OFDM with 256‐point fast Fourier transform and (255, 239) Reed‐Solomon forward error correction codecs are used. The modem can compensate for a carrier‐frequency offset of up to 50 ppm and a symbol rate offset of up to 1 ppm. Experiment results show that the system can achieve a bit error rate of 10^–5 at a signal‐to‐noise ratio of about 19.8 dB.     

3‐Level Envelope Delta‐Sigma Modulation RF Signal Generator for High‐Efficiency Transmitters

This paper presents a 0.13 μm CMOS 3‐level envelope delta‐sigma modulation (EDSM) RF signal generator, which synthesizes a 2.6 GHz‐centered fully symmetrical 3‐level EDSM signal for high‐efficiency power amplifier architectures. It consists of an I‐Q phase modulator, a Class B wideband buffer, an up‐conversion mixer, a D2S, and a Class AB wideband drive amplifier. To preserve fast phase transition in the 3‐state envelope level, the wideband buffer has an RLC load and the driver amplifier uses a second‐order BPF as its load to provide enough bandwidth. To achieve an accurate 3‐state envelope level in the up‐mixer output, the LO bias level is optimized. The I‐Q phase modulator adopts a modified quadrature passive mixer topology and mitigates the I‐Q crosstalk problem using a 50% duty cycle in LO clocks. The fabricated chip provides an average output power of –1.5 dBm and an error vector magnitude (EVM) of 3.89% for 3GPP LTE 64 QAM input signals with a channel bandwidth of 10/20 MHz, as well as consuming 60 mW for both channels from a 1.2 V/2.5 V supply voltage.     

310 GHz太赫兹通信系统设计

太赫兹波具有传输速率高、容量大、方向性好、抗干扰能力强等特点,由于大气损耗大和大功率源的缺乏,较适用于短距离无线通信。基于300 GHz频段的优良特性,设计了一种310 GHz太赫兹无线通信系统。通信链路基于美国亚毫米波与太赫兹产品制造公司(VDI)的谐波混频和超外差收发,系统主要由倍频器、功率放大器、滤波器和VDI次谐波混频器构成。根据链路预算搭建实际通信系统,仿真和实验结果证明：随着通信速率的升高,解调信号的失真逐渐增加。通信距离1 m条件下,系统能实现10 Gbps无误码传输,当速率达到11 Gbps时,误码率为5×10-6。     

基于混频偏置合成的高速太赫兹无线通信系统

提出一种基于载波抑制混频与载波偏置功率合成的高速太赫兹无线通信方案。发射端利用载波抑制混频器和载波偏置功率合成在140 GHz载波上实现了开关键控(OOK)调制;接收端利用包络检波接收器进行检波接收。分别开展了不同混频本振功率及偏置功率下的检波响应实验、不同基带信号功率及偏置功率下的检波响应实验,以及不同输入功率下的检波响应实验。实验结果对OOK调制器设计,以及OOK类通信系统的优化均具有较好的指导意义。最后,利用优化的系统参数在70 cm距离上实现了140 GHz, 16 Gbps的无线通信,系统误码率(BER)优于10-5。     

E‐Band Wideband MMIC Receiver Using 0.1 µm GaAs pHEMT Process

In this paper, the implementations of a 0.1 µm gallium arsenide (GaAs) pseudomorphic high electron mobility transistor process for a low noise amplifier (LNA), a subharmonically pumped (SHP) mixer, and a single‐chip receiver for 70/80 GHz point‐to‐point communications are presented. To obtain high‐gain performance and good flatness for a 15 GHz (71 GHz to 86 GHz) wideband LNA, a five‐stage input/output port transmission line matching method is used. To decrease the package loss and cost, 2nd and 4th SHP mixers were designed. From the measured results, the five‐stage LNA shows a gain of 23 dB and a noise figure of 4.5 dB. The 2nd and 4th SHP mixers show conversion losses of 12 dB and 17 dB and input P1dB of –1.5 dBm to 1.5 dBm. Finally, a single‐chip receiver based on the 4th SHP mixer shows a gain of 6 dB, a noise figure of 6 dB, and an input P1dB of –21 dBm.     

10 Gbps Optical Signal Transmission via Long‐Range Surface Plasmon Polariton Waveguide

We demonstrate 10 Gbps optical signal transmission via long‐range surface plasmon polaritons (LR‐SPPs) in a very thin metal strip‐guided geometry. The LR‐SPP waveguide was fabricated as a 14 nm thick, 2.5 μm wide, and 4 cm long gold strip embedded in a polymer and pigtailed with single‐mode fibers. The total insertion loss of 16 dB was achieved at a wavelength of 1.55 μm as a carrier wave. In a 10 Gbps optical signal transmission experiment, the LR‐SPP waveguide exhibits an excellent eye opening and a 2.2 dB power penalty at 10^?12 bit error rate. We confirm, for the first time, that LR‐SPPs can efficiently transfer data signals as well as the carrier light.     

10‐Gbit/s Wireless Communication System at 300 GHz

A 10‐Gbit/s wireless communication system operating at a carrier frequency of 300 GHz is presented. The modulation scheme is amplitude shift keying in incoherent mode with a high intermediate frequency (IF) of 30 GHz and a bandwidth of 20 GHz for transmitting a 10‐Gbit/s baseband (BB) data signal. A single sideband transmission is implemented using a waveguide‐tapered 270‐GHz highpass filter with a lower sideband rejection of around 60 dB. This paper presents an all‐electronic design of a terahertz communication system, including the major modules of the BB and IF band as well as the RF modules. The wireless link shows that, aided by a clock and data recovery circuit, it can receive 2⁷?1 pseudorandom binary sequence data without error at up to 10 Gbit/s for over 1.2 m using collimating lenses, where the transmitted power is 10 μW.     

High‐Gain Wideband CMOS Low Noise Amplifier with Two‐Stage Cascode and Simplified Chebyshev Filter

An ultra‐wideband low‐noise amplifier is proposed with operation up to 8.2 GHz. The amplifier is fabricated with a 0.18‐μm CMOS process and adopts a two‐stage cascode architecture and a simplified Chebyshev filter for high gain, wide band, input‐impedance matching, and low noise. The gain of 19.2 dB and minimum noise figure of 3.3 dB are measured over 3.4 to 8.2 GHz while consuming 17.3 mW of power. The Proposed UWB LNA achieves a measured power‐gain bandwidth product of 399.4 GHz.     

W‐Band MMIC chipset in 0.1‐μm mHEMT technology

We developed a 0.1‐μm metamorphic high electron mobility transistor and fabricated a W‐band monolithic microwave integrated circuit chipset with our in‐house technology to verify the performance and usability of the developed technology. The DC characteristics were a drain current density of 747 mA/mm and a maximum transconductance of 1.354 S/mm; the RF characteristics were a cutoff frequency of 210 GHz and a maximum oscillation frequency of 252 GHz. A frequency multiplier was developed to increase the frequency of the input signal. The fabricated multiplier showed high output values (more than 0 dBm) in the 94 GHz–108 GHz band and achieved excellent spurious suppression. A low‐noise amplifier (LNA) with a four‐stage single‐ended architecture using a common‐source stage was also developed. This LNA achieved a gain of 20 dB in a band between 83 GHz and 110 GHz and a noise figure lower than 3.8 dB with a frequency of 94 GHz. A W‐band image‐rejection mixer (IRM) with an external off‐chip coupler was also designed. The IRM provided a conversion gain of 13 dB–17 dB for RF frequencies of 80 GHz–110 GHz and image‐rejection ratios of 17 dB–19 dB for RF frequencies of 93 GHz–100 GHz.     

Design of Balanced Dual‐Band Bandpass Filter with Self‐Feedback Structure

A balanced dual‐band bandpass filter based on λ/2 stepped‐impedance resonators and open‐loop resonators is proposed in this letter. By employing a type of self‐feedback structure, an extra transmission zero is introduced near the common‐mode resonance frequency, and the common‐mode signal is suppressed. The measured results indicate that the filter can operate in 2.46 GHz and 5.6 GHz bands, and the insertion loss is 1.85 dB and 1.9 dB, respectively. Also, better common‐mode suppression is achieved.     

Chromatic Dispersion Monitoring of CSRZ Signal for Optimum Compensation Using Extracted Clock‐Frequency Component

This paper presents a chromatic dispersion monitoring technique using a clock‐frequency component for carrier‐suppressed return‐to‐zero (CSRZ) signal. The clock‐frequency component is extracted by a clock‐extraction (CE) process. To discover which CE methods are most efficient for dispersion monitoring, we evaluate the monitoring performance of each extracted clock signal. We also evaluate the monitoring ability to detect the optimum amount of dispersion compensation when optical nonlinearity exists, since it is more important in nonlinear transmission systems. We demonstrate efficient CE methods of CSRZ signal to monitor chromatic dispersion for optimum compensation in high‐speed optical communication systems.     

Monolithic SiGe Up‐/Down‐Conversion Mixers with Active Baluns

The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on‐chip 1 to 6 GHz up‐conversion and 1 to 8 GHz down‐conversion mixers using a 0.8 µm SiGe hetero‐junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up‐conversion mixer was implemented on‐chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up‐conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down‐conversion mixer was implemented on‐chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down‐conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz.     

A 9–31-GHz Subharmonic Passive Mixer in 90-nm CMOS Technology

A subharmonic down-conversion passive mixer is designed and fabricated in a 90-nm CMOS technology. It utilizes a single active device and operates in the LO source-pumped mode, i.e., the LO signal is applied to the source and the RF signal to the gate. When driven by an LO signal whose frequency is only half of the fundamental mixer, the mixer exhibits a conversion loss as low as 8–11 dB over a wide RF frequency range of 9–31GHz. This performance is superior to the mixer operating in the gate-pumped mode where the mixer shows a conversion loss of 12–15dB over an RF frequency range of 6.5–20 GHz. Moreover, this mixer can also operate with an LO signal whose frequency is only 1/3 of the fundamental one, and achieves a conversion loss of 12–15dB within an RF frequency range of 12–33 GHz. The IF signal is always extracted from the drain via a low-pass filter which supports an IF frequency range from DC to 2 GHz. These results, for the first time, demonstrate the feasibility of implementation of high-frequency wideband subharmonic passive mixers in a low-cost CMOS technology.     

High‐Speed Access over Copper: Rate Optimization and Signal Construction

This paper focuses on assessment and design of transmission systems for distribution of digital signals over standard Category‐7A copper cables at speeds beyond 10 Gbps. The main contribution of this paper is on the technical feasibility and system design for data rates of 40 Gbps and 100 Gbps over copper. Based on capacity analysis and rate optimization algorithms, system parameters are obtained and the design implementation trade‐offs are discussed. Our simulation results confirm that with the aid of a decision‐feedback equalizer and powerful coding techniques, namely, TCM or LDPC code, 40 Gbps transmission is feasible over 50 m of CAT‐7A copper cable. These results also indicate that 100 Gbps transmission can be achieved over 15 m cables.     

Performance improvement of 60‐GHz wireless optical systems with reverse‐parallel hybrid modulation scheme

This paper improves the performance of 60‐GHz wireless optical system including radio over fibre (RoF) and radio over free space optics (RoFSO), based on novel reverse‐parallel (RP) hybrid modulation scheme. This scheme combines the chromatic dispersion compensation technique of parallel modulation with energy efficiency manipulation technique of reverse modulation. Superior functioning of RoFSO is provided with reverse modulation compared with normal modulation. Comparative investigations are performed by loading 60‐GHz RF signal with 2.5 and 10‐Gbps data and modulating it with both reverse and hybrid modulators. Hybrid modulation performed better with improved BER of 10^?23 at distance of 51 km for 2.5‐Gbps data compared with reverse modulation with BER of 10^?7.     

The application of flip-chip bonding interconnection technique on the module assembly of 10 Gbps laser diode

Flip chip bonding technique using Pb/In solder bumps was applied to packaging of a 10 Gbps laser diode (LD) submodule for high speed optical communication systems. The effect of the flip-chip bonding interconnection technique instead of conventional wire bonding was investigated for high speed broad band devices. The broad band performance of 10 Gbps LD submodule was simulated using SPICE S/W and compared with experimental results. In this simulation, the 10 Gbps LD was modeled in a parallel RC circuit. The values of R and C used for the equivalent circuit were 5ω and 1 pF, respectively. The LD was placed in series with a 18ω thin film resistor to prevent the impedance mismatch between the LD and a 25ω transmission line. The dependence of parasitic parameters on the small signal modulation bandwidth and the scattering parameters of the LD submodule was investigated and analyzed up to 20 GHz. A small signal modulation bandwidth of 14 GHz at 10 mA dc bias current and the clean modulation response up to 20 GHz were found for the flip-chip bonded submodule. The bandwidth of flip-chip bonded 10 Gbps LD submodule is wider than that of the wire-bonded LD submodule by a difference of 3.8 GHz.     

A Narrow Bandwidth Microstrip Band‐Pass Filter with Symmetrical Frequency Characteristics

This letter proposes a band‐pass filter (BPF) with two transmission zeros based on a combination of parallel coupling and end coupling of half‐wave transmission lines. The fabricated BPF exhibited a narrow bandwidth and two transmission zeros near the pass‐band due to the end‐coupled and shielding waveguide. At the center operation frequency of 60 GHz, the 20 dB bandwidth of the BPF is 1.0 GHz, which is almost 2% of the center operation frequency, and the insertion loss is 3.12 dB. Two transmission zeros reach approximately 40 dB at 58.5 and 62.5 GHz. The simulation results almost agree with the measured results.