有理函数逼近技术在合元极技术中的应用

本文将有理函数逼近技术(Rational Function Approximation Technique,RFAT)应用到合元极技术中以快速求解三维复杂目标的宽频带和宽角度散射特性.有理函数逼近技术是计算数学中的一种重要的函数逼近方法.近年来颇受关注的渐进波形估计技术(Asymptotic Waveform Evaluation,AWE)和基于模型的参数估计技术(Model-Based Parameter Estimation,MBPE)均属于有理函数逼近的范畴.本文将AWE和MBPE两种有理函数逼近技术应用到合元极技术中,并从理论分析和数值性能的角度研究和比较了两种方法的优劣.典型数值实验表明,有理函数逼近技术结合合元极技术能够极大的加速三维复杂目标宽频带和宽角度散射特性的求解.     

太赫兹雷达反等离子体隐身研究

针对等离子体隐身目标的探测问题,从等离子体隐身机理和太赫兹(THz)频段高频、宽频带的反隐身特性出发,分析了太赫兹波反等离子体折射隐身和吸收隐身的可行性和优越性,建立了一种内封闭式等离子体隐身的理论模型,并采用分层介质方法分析计算了太赫兹波在内封闭式等离子体模型中的传输特性。结果表明,太赫兹波可以穿透一定密度和厚度的等离子体且能量衰减很小,使反射波增强,增大了等离子体隐身目标的RCS和有效探测等离子体隐身目标的概率,为太赫兹雷达反等离子体隐身设计提供理论依据。     

一种多导体散射问题的快速宽频带分析

分块阻抗矩阵迭代算法(Block-Iterative Algorithm)是一种非常直接而有效的求解多导体散射的加速求解算法.然而当单导体尺寸较大时,求解多导体散射的宽频带特性时仍然存在较费计算资源问题.基此,提出采用一种有效的Pade逼近型[Z]阻抗矩阵内插技术与分块阻抗矩阵迭代算法相结合的方法来快速分析多导体的宽频带电特性;计算结果与已有结果吻合较好,并且大大节省了计算资源,从而说明了该方法的快速性和精确性.     

基于物理光学法的再入等离子体包覆体空间散射特性分析

建立十一组元模型,数值模拟再人体化学反应绕流流场,得到流场参数随再入高度、马赫数变化的分布特性.基于绕流流场,采用等效输入阻抗方法及分层介质模型,应用物理光学法计算再入等离子体包覆体雷达散射截面.分析流场特性变化对散射特性的影响.对电磁波在等离子体鞘套内传播特性及电磁波与等离子体相互作用机理进行了初步分析.计算结果对再人体目标识别、等离子体隐身及再人通信具有一定的参考价值.     

时域有限差分法结合Pade逼近快速获取介质柱宽带RCS频率响应

由于时域信号的计算是在散射体近区内进行的，远区散射场的计算是通过近远场的变换而进行的。采用FDTD法计算散射体的宽频带RCS频率响应时，如果采用频域变换法，需要在很多频点上进行近远场变换计算。为此，本文引入Pade逼近，对FDTD法计算获得的、稀疏的RCS频率响应进行逼近，然后用获得的Pade有理逼近式宽频带RCS频率响应。计算结果表明Pade有理逼近式能很好地逼近FDTD法精确计算的曲线，同时计算速度可加快十多倍。     

新概念激光等离子体通道天线的研究

激光等离子体通道天线是一种具有卓越隐身性能的新概念天线.简单阐述了激光等离子体通道天线的系统实现,建立了等离子体通道天线的分析模型,结合边界条件推导出分析电磁波沿激光等离子体通道传播特性的特征方程和分析电磁波沿激光等离子体通道表面向外辐射特性的天线表面波模式色散方程,从而计算了激光等离子体通道天线的传播特性曲线和辐射方...     

等离子体涂覆三维目标散射特性的PLRC-FDTD分析

采用分段线性递归卷积时域有限差分方法(PLRC-FDTD)分析等离子体覆盖三维目标的散射特性,分别计算了均匀和非均匀等离子体覆盖导体球的后向雷达散射截面.计算结果表明等离子体涂层选择合适的厚度、电子密度和碰撞频率,能够有效的减小目标的雷达散射截面.选择合适的参数,非均匀等离子体层有更好的隐身效果.     

基于高低频混合方法的梅利逼近扫频技术

将矩量法(MoM)和物理光学(PO)混合方法与梅利逼近结合分析了电大载体平台上天线的宽带辐射特性.在切比雪夫逼近的基础上,通过梅利展开技术实现快速扫频,并利用MoM-PO方法减少矩阵方程中未知量个数,从而大大降低了内存需求和计算时间.相比于切比雪夫逼近,由于梅利展开式为有理函数,提高了计算精度.数值结果表明:该方法可以快速有效地分析大型载体平台上天线的宽带特性.     

分层等离子体包覆飞行器天线性能一体化分析

提出了一种适用于分层等离子体鞘套、高超声速飞行器以及天线一体化求解的修正多层薄介质片(Multi-Layer Thin Dielectric Sheet,ML-TDS)方法.该方法只需在相关参考面上进行面剖分,避免了对覆盖于机体表面等离子体的海量体剖分,从而大幅降低了待求未知量和计算量.详细介绍了修正ML-TDS方法,通过与体面积分方程方法和面积分方程方法的对比展示了其在分析分层等离子体鞘套覆盖下天线辐射特性问题中的优势.基于高速飞行器表面等离子体鞘套和天线间的互耦模型,分别计算了飞行器上单天线和双天线在等离子体鞘套和飞行器平台影响下的辐射特性.该方法可对等离子体鞘套包覆的飞行器和天线实现一体化的建模和计算,数值结果准确,计算复杂度低,是研究分层等离子体鞘套电磁效应较为便捷的数值分析工具.     

电磁波在二维等离子体光子晶体中的传播特性研究

采用时域有限差分的方法研究了电磁波在二维等离子体光子晶体中的传输特性.主要讨论了等离子体柱半径与晶格常数的比值,光子晶体的周期数以及不同晶格结构对TM极化入射波和TE极化入射波传输特性的影响,计算得出了电磁波入射等离子体光子晶体的透射系数,并对结果进行了分析.研究发现,通过改变等离子体光子晶体的结构参数,诸如等离子体柱半径与晶格常数的比值以及等离子体光子晶体的周期数,均可有效控制等离子体光子晶体的电磁性质.     

Analysis of periodic structures via a time-domain finite-element formulation with a Floquet ABC

An accurate absorbing boundary condition (ABC) is presented for three-dimensional time-domain finite-element (FEM-TD) analysis of infinitely periodic structures. The proposed ABC serves to truncate the computational domain in the nonperiodic directions and it is highly effective to absorb both the fundamental and the higher order Floquet modes. The formulation is applicable both for scattering and radiation analysis. Validation results are presented that demonstrate the ability of the FEM-TD to obtain highly accurate results over a broad frequency band that includes frequencies where a higher order Floquet mode is propagating (nonevanescent).     

用PLFSL实现微波高线性扫频研究

本文研究了一种微波高线性扫频技术的实现方法.这种方法运用锁相环路和延迟线来提高扫频线性度.文中首先建立了锁相扫频环路(PLFSL)的相位模型,并应用FFT和数字滤波器的概念进行了系统分析.其次利用计算机模拟计算了PLFSL的稳态响应.最后对PLFSL的原理框图进行了实验验证.测试结果:中心频率1.5GHz、扫频带宽为500MHz的PLFSL的扫频线性度为0.008%.这一结果说明该方法是先进、可行的.     

空间飞行器低频率宽频带射电波接收天线的设计探讨

针对在空间飞行器上难以使用圆极化天线来接收低频率、宽频带射电波的难题,首次提出了一种使用按一定角度排列的4根有源线天线来接收低频率、宽频带射电波的设计方案。该方案同样可以方便地确定射电波的能量密度和极化参数。理论分析表明该方法可行,但还有待进一步的实验来验证。     

Fast computation of wideband RCS using characteristic basis function method and asymptotic waveform evaluation technique

The Asymptotic Waveform Evaluation (AWE) technique is an extrapolation method that provides a reduced-order model of linear system and has already been successfully used to analyze wideband electromagnetic scattering problems. As the number of unknowns increases, the size of Method Of Moments (MOM) impedance matrix grows very rapidly, so it is a prohibitive task for the computation of wideband Radar Cross Section (RCS) from electrically large object or multi-objects using the traditional AWE technique that needs to solve directly matrix inversion. In this paper, an AWE technique based on the Characteristic Basis Function (CBF) method, which can reduce the matrix size to a manageable size for direct matrix inversion, is proposed to analyze electromagnetic scattering from multi-objects over a given frequency band. Numerical examples are presented to illustrate the computational accuracy and efficiency of the proposed method.     

新型多重谐振结构声子晶体隔声特性

提出了一种新型多重谐振结构声子晶体,该声子晶体结构属于局域共振结构,在300~2 500 Hz频率内有2个较宽的完全带隙和1个方向带隙。在带隙频率范围内对应有隔声峰,改变内、外层散射体材料能在不同频率范围内获得隔声峰。为拓宽隔声峰的频率范围,通过将不同散射体材料组成不同单元结构复合,在不同频率范围内发挥出较好的隔声效果。通过有限元法分析了影响结构复合隔声效果的关键因素。研究表明,采用结构复合能有效改善隔声效果,复合方式以结构间设置一层空气作为缓冲介质为最佳。     

Characterization of a shielded transition to a dielectric waveguide

A shielded sub-mm/THz monolithic transition between a layered dielectric waveguide and a strip-ridge line is characterized using two different approaches: the integral equation-mode matching (IEMM) method and the finite difference time domain (FDTD) technique. While higher order modes are considered, a simple method for determining the transition's circuit model (i.e., two-port scattering matrix) from the IEMM results is implemented and the electrical performance is studied as frequency and conductor width are varied. The FDTD analysis gives further insight into the behavior of the transition in a very wide frequency range (0-540 GHz). The transition is found to be very efficient over a wide frequency band and a broad range of conductor widths     

GTD模型在目标谐振区散射机理建模中的适用性分析

为了弄清光学区目标散射模型GTD模型在目标谐振区散射机理分析中的适用性,该文提出了一种基于匹配追踪的GTD参数提取新算法。在此基础上,利用该算法和Li 的最小二乘拟合方法,分别使用GTD模型,Altes模型以及扩展了的Altes模型对导体球体谐振区理论散射场和实测有限长柱体的超宽带散射场进行了分析,并通过对提取的散射类型参数与拟合结果的对比分析给出了几点有意义的结论。     

Compton散射对三元磁化等离子体光子晶体的影响

应用多光子非线性Compton散射模型和传输矩阵法,研究了Compton散射对一维三元磁化等离子体光子晶体中TE波禁带特性的影响。结果表明,与散射前相比,随等离子体频率增大,散射使左旋极化和右旋极化波的禁带展宽和透射峰值分别减小0.1 GHz和0.21 GHz,禁带中心频率向高频区移动位置增大0.5 GHz。随等离子体碰撞频率增大,散射对左旋极化和右旋极化波的禁带宽度有一定的影响。随等离子体回旋频率、填充率、光入射角和介质相对介电常数的增大,散射对左旋极化波和右旋极化波的禁带有明显的调谐作用。     

Selective fading on LOS microwave links: classical andspread-spectrum measurement techniques

A survey is presented of techniques for measuring selective fading on line-of-sight (LOS) microwave links, particularly over a wide band. Classical pulse methods, including pulse compression, as well as the much used frequency-sweep approach are covered. Methods utilizing both frequency-hopping and direct-sequence spread-spectrum transmissions are also discussed. An analysis of this latter method (used by the US National Bureau of Standards and by the authors) is included and a relationship is established between the true channel transmittance and that estimated by this approach. The advantages and disadvantages of the various schemes are outlined with the aim of assisting an experimenter in the choice of technique in a given experimental context     

S-parameter-measurement-based high-speed signal transientcharacterization of VLSI interconnects on SiO2-Si substrate

A new S-parameter-based signal transient characterization method for very large scale integrated (VLSI) interconnects is presented. The technique can provide very accurate signal integrity verification of an integrated circuit (IC) interconnect line since its S-parameters are composed of all the frequency-variant transmission line characteristics over a broad frequency band. In order to demonstrate the technique, test patterns are designed and fabricated by using a 0.35 μm complementary metal-oxide-semiconductor (CMOS) process. The time-domain signal transient characteristics for the test patterns are then examined by using the S-parameters over a 50 MHz to 20 GHz frequency range. The signal delay and the waveform distortion presented in the interconnect lines based on the proposed method are compared with the existing interconnect models. Using the experimental characterizations of the test patterns, it is shown that the silicon substrate effect and frequency-variant transmission line characteristics of IC interconnects can be very crucial