GaAs单片电路封装

简述了微波在封装中的传输特性，以及不同封装型式和材料的ＧａＡｓＭＭＩＣ封装，介绍了多层共烧陶瓷在ＭＭＩＣ封装中的应用。最后，综述了国外ＧａＡｓＭＭＩＣ的最新封装与互连技术。     

Low-Noise MESFET's for Ion-Implanted GaAs MMIC's

Fabrication considerations for low-noise FET's in ion-implanted GaAs monolithic microwave integrated circuits (MMIC'S) are presented. Processes that can deteriorate FET performance have been identified and some solutions proposed. Low-noise MMIC FET's fabricated along these lines show good microwave performance tbrongh 18 GHz, approaching the performance available from similar discrete FET's. 0.8- µm gate-length MMIC FET's with a noise figure of 2.9 dB and associated gain of 6.1 dB at 18 GHz have been fabricated. These devices are suitable for low-noise applications in ion-implanted GaAs MMIC's.     

A single-chip GaAs MMIC image-rejection front-end for digitalEuropean cordless telecommunications

An active image-rejection filter is presented in this paper, which applies actively coupled passive resonators. The filter has very low noise and high insertion gain, which may eliminate the use of a low-noise amplifier (LNA) in front-end applications. The GaAs monolithic-microwave integrated-circuit (MMIC) chip area is 3.3 mm² . The filter has 12-dB insertion gain, 45-dB image rejection, 6.2-dB noise figure, and dissipates 4.3 mA from a 3-V supply. An MMIC mixer is also presented. The mixer applies two single-gate MESFETs on a 2.2-mm² GaAs substrate. The mixer has 2.5-dB conversion gain and better than 8-dB single-sideband (SSB) noise figure with a current dissipation of 3.5 mA applying a single 5-V supply. The mixer exhibits very good local oscillator (LO)/RF and LO/IF isolation of better than 30 and 17 dB, respectively, Finally, the entire front-end, including the LNA, image rejection filter, and mixer functions is realized on a 5.7-mm ² GaAs substrate. The front-end has a conversion gain of 15 dB and an image rejection of more than 53 dB with 0-dBm LO power. The SSB noise figure is better than 6.4 dB, The total power dissipation of the front-end is 33 mW. The MMIC's are applicable as a single-block LNA and image-rejection filter, mixer, and single-block front-end in digital European cordless telecommunications. With minor modifications, the MMIC's can be applied in other wireless communication systems working around 2 GHz, e.g., GSM-1800 and GSM-1900     

A novel FET model including an illumination intensity parameter forsimulation of optically controlled millimeter-wave oscillators

This paper demonstrates an illuminated FET model including an illumination-intensity parameter for simulation of optical characteristics of microwave and millimeter wave integrated circuits (MMIC's). Modeling for an illuminated GaAs MESFET and an InP high electron-mobility transistor (HEMT), and analysis and experimental results from optically controlled microwave and millimeter-wave hybrid integrated circuit (HIC) and MMIC oscillators are discussed. The proposed illuminated FET model was able to explain the photoresponse of both the GaAs MESFET and the InP HEMT, and the photooperation of their circuits     

A low-impedance coplanar waveguide using an SrTiO3 thinfilm for GaAs power MMIC's

A novel structure for coplanar-waveguide transmission lines with low impedance and low loss is demonstrated in this paper. The new structure simply has a high dielectric SrTiO₃ thin film underneath the coplanar conductors. Due to the high dielectric constant of SrTiO₃, the coplanar line exhibited characteristic impedance as low as 18 Ω with a slot width of 5 μm and the center conductor width of 50 μm, while a conventional coplanar line on GaAs showed only 30 Ω with the same configuration. The newly developed coplanar structure is easily applicable for present GaAs monolithic-microwave integrated-circuit (MMIC) technology, especially for power MMIC's and low-impedance devices     

移动通信中的射频集成电路

介绍分析了在蜂窝和个人通信业务 (PCS)市场中适用于 RFIC的多种射频晶体管技术。Ga As HBT技术被作为介绍的基线 ,并且与目前已有的技术进行比较 ,得出对于射频应用 ,Ga AsHBT综合了 Si BJT和 Ga As FET两者优点的结论。文中还介绍了近年来国外 Ga As HBT MMIC,PHEMT MMIC和 In P HBT MMIC的研究进展情况。     

A small chip size 2 W, 62% efficient HBT MMIC for 3 V PCNapplications

This work describes the L-band low voltage (⩾1.6 V) power performance of AlGAs/GaAs heterojunction bipolar transistors (HBTs), their modeling and the design of a 2-W monolithic microwave integrated circuit (MMIC) for 3-V wireless mobile PCN applications (1800 MHz). The two-stage MMIC achieves 62% power-added efficiency (PAE) and 33 dB of linear gain, at a very small chip size of 1.2 mm². To our knowledge this is the best combination of power performance data for wireless applications demonstrated so far for a MMIC. The chip size is about a factor of four smaller than comparable MMIC's known before. The MMIC offers the potential both for low cost production due to small chip size, single voltage supply, and high performance at the same time     

Yield considerations for ion-implanted GaAs MMIC's

An ion-implantation based process is described for fabricating GaAs monolithic microwave integrated circuits (MMIC's) incorporating active devices, RF circuitry, and bypass capacitors. Low ohmic contact resistance and good control of metal-insulator-metal (MINI) capacitance values is demonstrated and some factors affecting FET and capacitor yield are discussed. High dc yield of typical amplifier circuits is shown indicating that this process has the potential for achieving very high overall yields in a production environment. Good yield of functional MMIC modules with multicircuit complexity is projected.     

Monolithic Microwave Integrated Circuits: An Historical Perspective

Monolithic microwave integrated-circuit (MMIC) technology as it exists today has evolved from events that occurred during the middle-to-late 1950's and early 1960's. These events are reconstructed through a review of the published literature, government contract reports and proposals, U.S. patents, and private communications with individuals directly involved in early MMIC development. No single point in time can be viewed as that historical moment when the idea of an MMIC was formalized; rather, the idea evolved over a period of time as a direct result of the successful development of analog and digital IC's and the push by the military services (primarily the Air Force at Wright Patterson) to apply semiconductor technology in defense systems, the evolutionary period is presented in chronological order and includes a discussion of the role played by the Molecular Electronics for Radar Applications program. Early development activities were pursued, with both silicon and GaAs used as the monolithic material. These activities, the early problems encountered with both materials, and the influence the problems had in molding today's technology are described.     

GaAs Monolithic MIC's for Direct Broadcast Satellite Receivers

A 12-GHz low-noise amplifier (LNA), a 1-GHz IF amplifier (IFA), and an 11-GHz dielectric resonator oscillator (DRO) have been developed for DBS home receiver applications by using GaAs monolithic microwave integrated circuit (MMIC) technology. Each MMIC chip contains FET's as active elements and self-biasing source resistors and bypass capacitors for a single power supply operation. It also contairns dc-block and RF-bypass capacitors. The three-stage LNA exhibits a 3.4-dB noise figure and a 19.5-dB gain over 11.7-12.2 GHz. The negative-feedback-type three-stage IFA shows a 3.9-dB noise figure and a 23-dB gain over 0.5-1.5 GHz. The DRO gives 10.mW output power at 10.67 GHz, with a frequency stability of 1.5 MHz over a temperature range from -40-80°C. A direct broadcast satellite (DBS) receiver incorporating these MMIC's exhibits an overafl noise figure of /spl les/ 4.0 dB for frequencies from 11.7-12.2 GHz.     

Computer-Aided Synthesis of Lumped Lossy Matching Networks for Monolithic Microwave Integrated Circuits ( MMIC's)

A systematic computer-aided synthesis (CAS) technique of lumped Iossy matching networks is presented in this paper. This exact synthesis procedure can take arbitrary finite quality factor Q for each lumped element in the matching network and therefore facilitate the circuit design for monolithic microwave integrated circuits (MMIC's) where the loss of the passive elements is too large to be neglected. The gain-band-width limitations of some useful lumped Iossy matching networks are discussed in detail and are summarized in a set of gain-bandwidth constraint plots. An interactive computer program LUMSYN is developed to solve this lumped Iossy synthesis problem. LUMSYN is a general-purpose CAS program which can be used by microwave circuit designers with limited background in network synthesis to carry out Iow-noise and power amplifier designs in MMIC's. Finally, a design example of broad-band monolithic microwave low-noise amplifier using a state-of-the-art low-noise submicron gate-length GaAs MESFET is presented to illustrate the computer-aided synthesis of MMIC amplifiers.     

GaAs HBT's for microwave integrated circuits

The status of the microwave GaAs heterojunction bipolar transistor (HBT) technology is reviewed. Microwave circuits for advanced military and commercial systems continue to increase their dependence on the performance, functionality, and cost of active components fabricated using solid-state technology. The performance advantages provided by GaAs HBT's, for several critical circuit applications, have stimulated a worldwide development activity. Progress in HBT device technology and microwave circuit applications has been extremely rapid because of the broad availability of III-V compound semiconductor epitaxial materials and prior experience with GaAs field-effect transistors (FET's) and monolithic microwave integrated circuits (MMIC's). The great flexibility of HBT's in microwave circuits makes them prime candidates for applications in complex multifunctional microwave/digital IC's in next-generation systems     

Low phase noise millimeter-wave frequency sources using InP-basedHBT MMIC technology

A family of millimeter-wave sources based on InP heterojunction bipolar transistor (HBT) monolithic microwave/millimeter-wave integrated circuit (MMIC) technology has been developed. These sources include 40-GHz, 46-GHz, 62-GHz MMIC fundamental mode oscillators, and a 95-GHz frequency source module using a 23.8-GHz InP HBT MMIC dielectric resonator oscillator (DRO) in conjunction with a GaAs-based high electron mobility transistor (HEMT) MMIC frequency quadrupler and W-band output amplifiers. Good phase noise performance was achieved due to the low 1/f noise of the InP-based HBT devices. To our knowledge, this is the first demonstration of millimeter-wave sources using InP-based HBT MMIC's     

GaAs MMIC的MIM电容Si3N4介质的TDDB评价

运用TDDB理论,研究分析了G aA s MM IC的M IM氮化硅电容的导电特性和击穿特性,设计制作了三种对比分析的G aA s MM IC的M IM氮化硅电容结构,通过不同斜率的斜坡电压对氮化硅介质进行了可靠性评价,S i3N4M IM电容的可靠性与其面积和周长密切相关,介质缺陷是导致电容失效的主要因素。通过不同斜率的斜坡电压获得电场加速因子(γ)预计了10 V工作电压下的S i3N4介质层的寿命。     

毫米波器件与电路技术

阐述了近来毫米波器件及电路的技术动向。异质结FET和HBT在InP系突现出优越的性能,在GaAs系已完全进入系统应用阶段。在此应用观点的影响下,相继开发成功了宽带无线通信系统和车载雷达用的CPWMMIC芯片以及倒装片封装模块。     

The design of tuned front-end GaAs MMIC optical receivers

Recently, much interest has been shown in the design of very low noise tuned front-end optical receivers for use in lightwave systems. This paper looks at the accurate design of such receivers. Simplified design expressions are presented for a number of tuning configurations with theoretical and measured results being presented. The designs were realized as GaAs monolithic microwave/millimeter-wave integrated circuits (MMIC's)     

0.2～30GHz GaAs FET开关模型的提取与验证

在GaAs单片微波集成电路(MMIC)设计中,准确的器件模型对于提高电路设计成功率和缩短电路研发周期起着重要作用。首先采用标准的GaAs MMIC工艺制造出不同栅指数和单位栅宽的开关PHEMT器件,然后对加工的开关电路在"开"态(Vgs=0 V)和"关"态(Vgs=-5 V)进行宽频率范围内的测量,基于测量结果建立起一个参数化的GaAs PHEMT开关等效电路模型,最后通过单刀单掷(SPST)开关来验证参数化模型。应用该参数化模型设计的电路实测与仿真结果基本吻合,证明参数化的GaAs PHEMT模型是可用的。该模型可用于30 GHz以下GaAs PHEMT工艺开关MMIC电路仿真设计。     

MMIC 14-GHz VCO and Miller Frequency Divider for Low-Noise Local Oscillators

An MMIC voltage-controlled oscillator and an MMIC frequency divider are developed and applied to a 14-GHz low-noise local oscillator. To obtain both wide tuning range and low pulling figure, the source-follower FET circuit is used in the voltage-controlled oscillator. A wide-band balanced mixer and a filtering amplifier are integrated in a single chip and constitute the Miller frequency divider. -The MMIC's were assembled into a 14-GHz phase-locked loop in order to demonstrate that they will operate as key components of low-noise oscillators. It is shown experimentally that even for low-Q MMIC circuitry, the carrier noise of the oscillator is reduced enough for practical purposes such as space-borne heterodyne receivers, transmitters, and radio repeaters in Ku-band satellite communication systems. Thus, prospects are bright for development of single-chip microwave low-noise oscillators.     

GaAs微波单片集成电路(MMIC)的可靠性研究

本文介绍了GaAs MMIC的可靠性研究与进展，重点介绍了工艺表征工具（TCV）、工艺控制监测（PCM）和统计工艺控制（SPC）等实现产品高质量、高可靠性和可重复性的可靠性保障技术，为国内GaAs MMIC可靠性研究提供了新的思路。     

Single-MMIC four-channel transmitter module for multichannelRF/optical subcarrier multiplexed communications applications

Presents a compact single monolithic microwave integrated circuit (MMIC) transmitter module for four-channel RF/optical subcarrier multiplexed (OSCM) communication applications. The developed module consists of one fully monolithic four-channel OSCM transmitter integrated circuit (IC) and four coupled-line filters. The MMIC is designed and implemented in a commercial 0.6-μm GaAs MESFET process and five-stage coupled-line filters are fabricated for each of the four channels on the module board. The module design and bit-error-rate performance are considered. This is the first fully monolithic IC transmitter module for OSCM communications applications