Ka波段回旋行波管电子枪阴极热分析

利用有限元软件ANSYS对回旋行波管电子枪阴极组件进行热分析,得到了100W加热功率情况下的温度分布以及热形变情况,并利用EGUN软件分析了热形变后的阴极发射的电子注性能的变化。最后测试了实际阴极的温度,测试结果与模拟相符。为电子枪的设计、优化和实际装配提供了一定的依据。     

表面响应法在埋置型大功率多芯片微波组件热布局中的应用研究

本文将有限元模拟与基于统计试验的表面响应法（RSM）相结合,应用于特定需求的埋置型大功率多芯片微波组件热布局分析中,先通过ANSYS温度场分析,得出大功率芯片布局是影响整体温度和芯片结温的关键因素,再对一含有四个大功率芯片的微波组件模块进行了表面响应分析,得到了关于芯片坐标的线性回归方程,利用该方程可预测坐标组合下芯片的结温和进行芯片坐标的寻优。同时评价了RSM响应模型的精度,采用有限元仿真验证表明：线性回归方程的预测值与仿真值误差仅为0．0623℃,研究成果对埋置型大功率多芯片微波组件热设计具有指导意义。     

W波段回旋行波管电子枪热分析

利用有限元软件ANSYS对W波段回旋行波管电子枪进行了热应力分析.在给定热子功率下对阴极组件的温度场分布和热形变分布进行了模拟,并通过实验进行验证.测试的温度分布基本与模拟结果基本一致.最后,利用EGUN软件对电子枪形变前后进行了模拟.     

LTCC中埋置大功率芯片散热的三维有限元分析

采用有限元软件ANSYS建立了一种适用于特定需求的低温共烧陶瓷基板(LTCC)中埋置大功率芯片微波组件的三维热模型,在主要考虑传导和对流散热的情况下,对三维模型进行了温度分布和散热情况的模拟分析.考察了结构中主要材料如冷板、灌封胶等对散热的影响,并定量分析了空气强迫对流系数对整体最大结温的影响.研究结果表明:增加冷板面...     

W波段回旋行波管电子枪热分析（英文）

利用有限元软件ANSYS对W波段回旋行波管电子枪进行了热应力分析.在给定热子功率下对阴极组件的温度场分布和热形变分布进行了模拟,并通过实验进行验证.测试的温度分布基本与模拟结果基本一致.最后,利用EGUN软件对电子枪形变前后进行了模拟.     

行波管电子枪组件的热及形变分析

使用Ansys软件,对行波管的电子枪阴极组件进行了热分析和形变分析.计算了阴极在真空条件下,加载热辐射与热传导两种边界条件时到达温度稳定所需要的热启动时间,以及得到了阴极组件在温度稳定后的热形变大小和等效应力的分布,并将这些结果应用在微波管设计套装MTSS中计算了形变对阴极发射所产生的影响,对实际的阴极组件设计提供理论...     

印制板组件回流焊表面温度场的建模仿真技术

采用有限元分析方法，基于材料实际参数建立印制板组件的三维模型。对照回流炉实际温度设置方式，通过研究炉体结构、加热方式和空气流动，然后以传热学中的射流模型估算得到的对流系数值作为有限元模型的边界条件，通过模拟仿真得出组件表面各个位置在再流焊过程中的温度变化情况和温度场的分布情况。在印制板组件表面设置测温点，测量实际回流曲线，与模拟仿真结果进行对比，验证了仿真的有效性。     

表面响应法在埋置型大功率多芯片微波组件热布局中的应用研究

该文将有艰元模拟与基于统计试验的表面响应法(RSM)相结合,应用于特定需求的埋置型大功率多芯片微波组件热布局分析中,先通过ANSYS温度场分析,得出大功率芯片布局是影响整体温度和芯片结温的关键因素,再对一含有四个大功率芯片的微波组件模块进行了表面响应分析,得到了关于芯片坐标的线性回归方程,利用该方程可预测坐标组合下芯片...     

CBGA组件热变形的2D-Plane42模型有限元分析

本文介绍有限元中的2D-Plane42模型在CBGA组件热变形中的应用，利用有限元的模拟CBGA组件的应变、应力的分布，通过模拟表明有限元法是研究微电子封装中BGA焊点、CBGA组件的可靠性的方法。     

焊接与连接工艺

0316936CBGA组件热变形的2D-Plane42模型有限元分析〔刊〕/杨玉萍//电子工艺技术。-2003,24(2).-67～70(C) 介绍有限元中的2D-Plane42模型在CBGA组件热变形中的应用,利用有限元的模拟CBGA组件的应变、应力的分析,通过模拟表明有限元法是研究微电子封装中BGA焊点、CBGA组件的可靠性的方法。参8 0316937倒装芯片凸点制作方法〔刊〕/李福泉//电子工艺技术。-2003,24(2).-62～66(C)     

频率对PIN限幅器微波脉冲热损毁效应的影响

采用数值仿真和理论分析相结合的方法研究了频率对PIN（positive-intrinsic-negative）限幅器微波脉冲热损毁效应的影响.研究发现,在相同脉冲宽度情况下,PIN限幅器微波脉冲热损毁功率阈值随频率的升高而降低,由于在一定功率下虽然频率与微波脉冲能量无关,但是在相同脉冲宽度情况下,PIN管阻抗周期性增大的次数随着频率的升高而增多,使得PIN管平均阻抗增大,实际吸收能量增多.该规律对全面评估PIN限幅器的微波脉冲防护能力具有重要的意义.     

The influence of microwave pulse width on the thermal burnout effect of a PIN diode limiting-amplifying system

This paper analyzes the influence of the microwave pulse width on the thermal burnout effect of a PIN diode limiting-amplifying system. Based on theoretical analyses and simulation, the relationship of the burnout effect on a PIN diode limiter and a PIN diode limiting-amplifying system is obtained first. By adopting an absorption efficiency factor, the theoretical model of the relationship between the microwave pulse width and the burnout power threshold for the PIN diode limiting-amplifying system is obtained. The proposed theoretical formulas can be determined by using at least two sets of simulation or measurement results to fit the constant coefficients, which can greatly reduce the simulation or experimental costs. The results obtained by the theoretical formulas are in good agreement with the numerical simulation results obtained by our self-designed device–circuit joint simulator, which verifies the correction of the theoretical analyses and modeling. The available microwave pulse width range for the proposed theoretical formulas is from 10 ns to 10 μs. In consideration of the potential threat of microwave pulses, the system-level study results obtained in this paper will be helpful for the design of the radio frequency receivers.     

The influence of microwave pulse repetition frequency on the thermal burnout effect of a PIN diode limiting-amplifying system

This paper analyzes the influence of the microwave pulse repetition frequency on the thermal burnout effect of a PIN diode limiting-amplifying system. Based on the study of the single-shot microwave pulse thermal burnout effect and by introducing a new assumption that the heat dissipation of the electric field energy and the nonequilibrium carrier energy during the microwave pulse intervals can be neglected, the theoretical thermal burnout model in our previous study is extended to be suitable for repetitive microwave pulses. The theoretical relationship among the pulse number, the pulse repetition frequency, the pulse width and the thermal burnout power threshold is obtained by theoretical derivation. Because the assumptions are introduced, the theoretical relationship requires that both the whole length of a repetitive microwave pulse and the pulse width in a cycle of a repetitive microwave pulse should be between 10 ns and 10 μs. The results obtained by the theoretical relationship are in good agreement with the simulation results obtained by our self-designed device-circuit joint simulator, which verifies the correctness of the theoretical analyses, modeling and derivation. By fitting at least two sets of simulation or experimental data, the theoretical relationship can be used to predict the thermal burnout power thresholds of PIN diode limiting-amplifying systems under microwave pulse injections with different pulse parameters. It can greatly reduce the simulation or experimental costs and could be helpful for the design of a radio frequency receiver.     

一种改进结构的GaAs微波PIN二极管

设计并制作了高性能GaAs微波PIN二极管.分析了GaAsPIN二极管的结构对其性能的影响,并根据分析结果改进了GaAsPIN二极管的结构.制作了常见结构和改进结构的GaAsPIN二极管,比较了不同结构的GaAsPIN二极管的测试数据,从而验证了理论分析的结果.改进后的GaAsPIN二极管制作工艺更为简单,具有良好的高频特性,截止频率达到1520.5GHz.这种改进结构的GaAs微波PIN二极管在微波电路中具有良好的应用前景.     

RF model of flexible microwave single-crystalline silicon nanomembrane PIN diodes on plastic substrate

This paper reports the realization and RF modeling of flexible microwave P-type-Intrinsic-N-type (PIN) diodes using transferrable single-crystalline Si nanomembranes (SiNMs) that are monolithically integrated on low-cost, flexible plastic substrates. With high-energy, high-dose ion implantation and high-temperature annealing before nanomembrane release and transfer process, the parasitic parameters (i.e. resistance, inductance, etc.) are effectively reduced, and the flexible PIN diodes achieve good high-frequency response. With consideration of the flexible device fabrication, structure and layout configuration, a RF model of the microwave single-crystalline Si nanomembrane PIN diodes on plastic substrate is presented. The RF/microwave equivalent circuit model achieves good agreement with the experimental results of the single-crystalline SiNM PIN diodes with different diode areas, and reveals the most influential factors to flexible diode characteristics. The study provides guidelines for properly designing and using single-crystalline SiNMs for flexible RF/microwave diodes and demonstrates the great possibility of flexible monolithic microwave integrated systems.     

微波PIN二极管倍频器研究

用理想的开关模型对反向并联PIN二极管对的输出频谱和倍频损耗进行分析,与混频二极管倍频器和变容二极管倍频器进行了比较,分析了PIN二极管的倍频机理。对微波PIN二极管倍频器进行了实验研究,得出了有益的结论。研制的S波段和C波段五倍频器倍频损耗分别达到15.4 dB和10.6 dB,而S波段的倍频源相位噪声达到—136 dBc/Hz@10 kHz,具有低噪声性能。     

Thermal design of microwave PIN diodes

Design of microwave PIN diodes suitable for phased array antennas is considered from the point of view of specific power handling capability. Analysis of the thermal parameters of the diode by previous authors is briefly reviewed. Outline of a complete design procedure is given from the point of view of thermal management and microwave performance. Computed values of design parameters are given.     

基于短波通信的射频前端电磁脉冲防护模块仿真与设计

随着通信系统面临的电磁工作环境越来越严峻,高功率容量、低插损、快响应时间的电磁脉冲防护模块对其射频前端电路的保护越发的重要起来.本文主要基于PIN二级管射频限幅的原理,构建了PIN二极管的时域等效电路模型,利用去嵌入阻抗场计算方法提取相应电路的S参数,优化设计匹配网络,并采用无源多级PIN二极管结构,设计了一个工作于0~200MHz,插入损耗小于0.15dB,驻波比小于1.4dB,响应时间小于1ns的短波通信电磁脉冲防护模块.结合PIN二极管时域等效电路模型,利用先进设计系统（Advanced Design System,ADS）仿真软件对电磁脉冲防护模块限幅性能进行仿真,并对加工出来的电磁脉冲防护模块进行了测试,结果验证了各项指标满足要求.     

微波激励PIN二极管的时频响应研究

利用一种PIN二极管子电路模型,分析微波激励下的I区电导调制机理,通过ADS软件瞬态、谐波仿真,研究Ⅰ层厚度w和少数载流子寿命τ对PIN二极管时频响应的影响。结果表明,对于同一微波激励,w越大,尖峰泄漏功率越大,导通时隔离度越小;τ越大,尖峰泄漏脉宽越小,导通时隔离度越大。仿真结果与理论分析相符。     

基于AFSS的吸波性能可调的微波吸收体

从传统的Salisbury屏结构出发,设计了一种由半圆和三角图形组合而成的频率选择表面(FSS)单元,随后将PIN二极管与FSS图形相结合,制得了一种AFSS吸波结构体.利用电抗加载方式对该结构体进行了仿真,并在微波暗室下对实物进行了测试.结果表明:测试结果和仿真结果变化趋势相似.在2～8 GHz内,结构体吸收峰从-4...