Noise behavior of Schottky barrier gate field-effect transistors at microwave frequencies

The noise behavior of a Schottky barrier gate field-effect transistor is investigated by the use of the noise equivalent circuit. The influence of the carrier velocity saturation is estimated. The noise parameters are calculated by taking into account the influence of parasitic resistances. Measured and calculated noise parameters show good agreement in the frequency range 2-8 GHz.     

复合负反馈技术在宽带有源微波冷噪声源中的应用

针对C波段宽带有源微波冷噪声源设计中输出低温噪声性能与工作带宽的矛盾,文中选用Avago公司的 ATF38143型GaAs 基赝掺杂高电子迁移率晶体管(pHEMT)设计了一款C波段宽带有源微波冷噪声源。采用串、并联负 反馈电路拓扑结构,在保证低温噪声输出性能的同时提升了工作带宽,其中心频点为6.95 GHz,工作带宽为1.3 GHz,相 对带宽为18.7%,常温条件下带内输出最低噪声温度为141.62 K,工作频段可覆盖C波段微波辐射计中心频点为6.60 GHz、 6.93 GHz、7.30 GHz 的三个通道。     

高超噪比微波固态噪声源设计

固态噪声二极管的雪崩散弹噪声在一定条件下近似为白噪声。根据固态噪声二极管在雪崩击穿状态的等效电路,设计出与之匹配的电路结构,以实现超噪比的最大输出。在8.6~9.6 GH z,超噪比达到32~34 dB,平坦度±1 dB,超噪比随温度变化小于0.01 dB/°C。     

A low-noise 1.2–1.8 GHz cooled GaAs FET amplifier

A low-noise 1.2–1.8 GHz cooled GaAs FET amplifier with mixer bias circuit is reported. The amplifier noise temperature obtained at an ambient temperature of 20 K in the frequency range of 1.2–1.7 GHz is 10K. The lowest noise temperature is 4K. The gain is about 30 dB. An automatic measuring instrument for noise temperature was designed. The noise effect of the input cable and the error analysis of the total measurement were made. The total measurement error is 2 K.     

基于螺旋谐振环结构的UWB同步开关噪声抑制电源平面

针对目前印制电路板中采用的同步开关噪声抑制方法抑制带宽较窄、全向性较差、电源平面有效使用面积小、结构复杂及对信号质量影响大的问题,提出了一种基于螺旋谐振环结构的超宽带同步开关噪声抑制平面,具有结构简单、阻带宽、抑制方向具有全向性、无需周期性电磁带隙结构的特点。通过研究其等效电路模型,使用三维有限元法( FEM)对所设计的结构提取了S参数,并进行了频域与时域分析与仿真。仿真结果表明：所提出的结构其同步开关噪声抑制深度在-40 dB时,阻带范围为0.13~20 GHz,抑制带宽达到19.87 GHz,有效降低了带隙中心频率;当注入噪声电压为1 V时,可将噪声电压抑制到0.25 mV;对比UC-EBG和Planar EBG结构,在-40 dB抑制深度时,抑制带宽分别提高了16.97 GHz和17.73 GHz。     

基于Phase-Refining技术的微波宽带频率合成器

为改善宽带频率合成器的相位噪声,提出一种基于Phase-Refining技术的微波宽带频率合成器结构与一种对其相位噪声的准确分析方法。首先,根据线性传递函数与叠加原理得到该频率合成器的相位噪声解析模型,通过对振荡器实测相位噪声谱型进行曲线拟合并带入模型中来准确预测其相位噪声性能。分析表明,在级联偏置锁相环中,整个输出频率范围内都可通过将反馈分频比最小化来改善其环路带宽内的相位噪声。实验结果表明,该频率合成器的输出频率范围为2.1~5.6 GHz,频率步进为1 Hz,当输出为2.1 GHz与5.6 GHz时,在频偏10 kHz处的相位噪声分别为-114.7 dBc/Hz与-108.2 dBc/Hz,其相位噪声测试结果与分析计算结果相吻合。     

Accurate modeling and parameter extraction for MOS transistorsvalid up to 10 GHz

Accurate modeling and efficient parameter extraction of the small signal equivalent circuit of submicrometer MOS transistors for high-frequency operation are presented. The equivalent circuit is based on a quasi-static approximation which was found to be adequate in the gigahertz range if the extrinsic components are properly modeled. It includes the complete intrinsic quasi-static MOS model, the series resistances of gate, source, and drain, and a substrate coupling network. Direct extraction is performed by Y-parameter analysis on the equivalent circuit in the linear and saturation regions of operation. The extracted results are physically meaningful and can be used to “de-embed” the extrinsic effects such as the substrate coupling within the device. Good agreement has been obtained between the simulation results of the equivalent circuit and measured data up to 10 GHz     

Characterization of impact of process options in Germanium-On-Insulator (GeOI) high-k & metal gate pMOSFETs by low-frequency noise

The impact of technological processes on Germanium-On-Insulator (GeOI) noise performance is studied. We present an experimental investigation of low-frequency noise (LFN) measurements carried out on (GeOI) PMOS transistors with different process splits. The front gate is composed of a SiO₂/HfO₂ stack with a TiN metal gate electrode. The result is an aggressively reduced equivalent oxide thickness (EOT) of 1.8 nm. The buried oxide is used as a back gate for experimental purposes. Front and back gate interfaces are characterized and the slow oxide trap densities are extracted. The obtained values are comprised between 5 × 10¹⁷ and 8 × 10¹⁸ cm⁻³eV⁻¹. No correlation between front interface trap density and front interface mobility is observed. We underline a strong correlation between rear interface trap density and rear interface mobility degradation. The impact of Ge film thickness is equally studied. For thin films, the measured drain-current noise spectral density shows that LFN can be described by the carrier fluctuation model from weak to strong inversion. For thicker film devices, in weak inversion the LFN can be described by the mobility fluctuation model and in strong inversion the LFN is described by the carrier fluctuation model. The α_H parameter for these devices is 1.2 × 10⁻³. These results are significant for the future development of GeOI technologies.     

长波长PIN／HBT集成光接收机前端噪声分析

文章研究磷化铟(InP)基异质结双极晶体管(HBT)和PIN光电二极管(PIN-PD)单片集成技术,利用器件的小信号等效电路详细计算了长波长PIN/HBT光电子集成电路(OEIC)光接收机前端等效输入噪声电流均方根(RMS)功率谱密度.分析表明:对于高速光电器件,当频率在100 MHz～2 GHz范围内时,基极电流引起的散粒噪声和基极电阻引起的热噪声起主要作用;频率大于5 GHz时,集电极电流引起的散粒噪声和基极电阻引起的热噪声起主要作用.在上述结论的基础上,文章最后讨论了在集成前端设计的过程中减小噪声影响的基本方法.     

S波段低相噪同轴介质压控振荡器设计

运用串联反馈振荡器理论设计了一个工作于S波段的低相噪同轴介质压控振荡器。首先分析了同轴介质谐振器的理论以及串联反馈振荡器的工作原理,然后在高频电磁仿真软件HFSS和ADS中进行仿真和设计。为了实现电调谐,将变容管合理地加入振荡器,最终设计完成了一个S波段的低相噪同轴介质压控振荡器。通过对实物成品的测量和调试表明,此压控振荡器达到了预定的技术指标,各项性能良好。测试结果:工作频率为2.075~2.250 GHz,调谐范围为1.75 GHz,输出功率≥11 dBm,谐波抑制度≥23 dBc,相位噪声优于-133 dBc/Hz@100kHz。     

L 波段宽带低温低噪声放大器的设计与测量*

高电子迁移率晶体管(HEMT)的小信号等效电路低温模型是研制致冷低噪声放大器(LNA)与研究晶 体管微波特性的基础。该文通过测量HEMT 器件在低温环境下直流参数与散射参数(S 参数),构建了包含噪声参 量的小信号等效电路,并据此设计了一款覆盖L 波段的宽带低温低噪声放大器(LNA),工作频率1 ~2GHz,相对带宽 达到66. 7%。在常温下放大器功率增益大于28dB,噪声温度小于39K;当环境温度制冷至11K 时,噪声温度为1. 9 ~3. 1K,输入输出端口的回波损耗S11 和S22 均优于-10dB,1dB 压缩点输出功率为9. 2dBm,功耗仅为54mW。     

Extraction of Substrate Resistance in Multifinger Bulk FinFETs Using Shorted Source/Drain Configuration

The substrate resistances of highly scaled bulk FinFETs were extracted by using a new RF equivalent circuit, and this approach was verified by a 3-D device simulator. Small signal model parameters of bulk FinFETs were extracted through proposed equivalent circuit and Y-parameter analysis. Unlike the conventional method, the proposed method showed frequency-independent substrate resistances in highly scaled devices. The extraction of the substrate resistances is investigated with number of finger, device geometry, and bias condition. Our approach was verified up to 50 GHz in devices operating in the saturation region.     

A 0.18 μm CMOS linear-in-dB AGC post-amplifier for optical communications

This paper presents a fully integrated 10GBase-LX4 Ethernet receiver front-end automatic gain control amplifier realized in a 0.18 μm CMOS process. Based on a very compact and reliable inductorless design, the proposed differential post-amplifier, comprises three main digitally programmable gain stages, a DC offset cancellation network and an automatic gain feedback control loop. Experimental results demonstrate a −3 dB cut-off frequency above 2.3 GHz over a −3 to 33 dB linear-in-dB controlled gain range with a sensitivity of 2.0 mV_p-p with a BER of 10⁻¹² at 2.5 Gb/s. For the aforementioned standard, 3.125 Gb/s, an input dynamic range above 50 dB is achieved, from 2.5 mV_p-p to 800 mV_p-p, indicating a BER of 10⁻¹². The chip core area is 0.3 × 0.3 mm² and it consumes 58 mW with a single supply voltage of 1.8 V.     

LD抽运1319nm单频激光器的调谐和噪声抑制研究

研究了LD抽运单块非平面行波环行腔Nd:YAG激光器的调谐特性,通过控温法实现了1319nm单频激光的宽范围调谐,调谐范围14GHz。实验研究了影响1319nm单频激光器功率噪声主要因素,测量了激光功率噪声谱,并通过光电反馈抑制弛豫振荡功率噪声,弛豫震荡中心频率噪声抑制了30dB,提高了测量精度。     

A simplified approach to optimum noise source impedance determination for GaAs FET amplifiers

A simple, analytical approach to determine the optimum noise source impedance of a GaAs FET amplifier in the 3-12 GHz frequency range is developed. The procedure can also be used in the 0-5—3 GHz range, but the model on which the procedure is based may be less accurate in this frequency range. The approach requires knowledge of the transistor's small-signal model parameters and its minimum noise temperature versus frequency. The approach is relatively insensitive to errors in the value of the GaAs FET small-signal parameters, but noise in the required minimum noise temperature data is potentially a source of nonlinear errors in the computed value of the optimum noise source impedance with respect to the error in the minimum noise temperature data The amount of error in the computed value of optimum noise source resistance is roughly proportional to the error in the minimum noise temperature data when the error at each data point is correlated, while the error in the computed value of the optimum noise source reactance is roughly three times the error present in the minimum noise temperature data. When the error is uncorrelated, the method does not yield acceptable results.     

电流反馈型均一相位噪声正交振荡器

论文提出了一种电源反馈型的全集成正交压控振荡器。得益于反馈电流源的电流调节作用,提出的正交振荡器在整个频率调谐范围之内有着均一的相位噪声 。 此振荡器用65-nm CMOS工艺实现。测试结果表明,该振荡器工作电压为1.2V, 消耗的电流均值是3mA. 频偏1MHz的相位噪声小于 -110dBc/Hz。整个调谐范围内的相位噪声变化小于1dBc/Hz, 这充分证明了电流反馈技术的正确性。     

RF power performance evaluation of surface channel diamond MESFETs

We experimentally investigate the large-signal radio frequency performances of surface-channel p-type diamond MESFETs fabricated on hydrogenated polycrystalline diamond. The devices under examination have a coplanar layout with two gate fingers, total gate periphery of 100 μm; in DC they exhibit a hole accumulation behavior with threshold voltage V_t ≈ 0-0.5 V and maximum drain current density of 120 mA/mm. The best small-signal radio frequency performances (maximum cutoff or transition frequency f_T and oscillation frequency f_max) were obtained close to the threshold and were of the order of 6 and 15 GHz, respectively. The power radio frequency response was characterized by driving the devices in class A at an operating frequency of 2 GHz and identifying through the active load-pull technique the optimum load for maximum power added efficiency. A power gain in linearity of 8 dB and an output power of approximately 0.2 W/mm with 22% power added efficiency were obtained on the optimum load impedance at a bias point V_DS = −14 V, V_GS = −1 V. To the best of our knowledge, these are the first large signal measurements ever reported for surface MESFET on polycrystalline diamond, and show the potential of such technology for the development of microwave power devices.     

Parameter extraction of accurate and scaleable substrate resistancecomponents in RF MOSFETs

Parameter extraction of the substrate resistance, which becomes important in radio frequency (RF) and mixed signal integrated circuit (IC) design, is discussed based on a simple substrate network of lumped components. By using the measured HF s-parameter data from a set of devices with different geometries, the scaleable parameters for substrate resistances components can be obtained. The simple substrate model with extracted scaleable parameters is accurate for devices with different widths and fingers in a frequency range up to 10 GHz     

Impact of low-frequency substrate disturbances on a 4.5 GHz VCO

This paper presents the impact of low-frequency substrate disturbances on a fully integrated voltage-controlled oscillator (VCO) spectrum. A 4.5 GHz VCO test-chip is presented; two substrate taps are placed inside the VCO core to measure or to inject disturbances into the substrate. The VCO carrier frequency sensitivity function of the tuning voltage and the bias current are measured. Then, the VCO spurious side-bands caused by harmonic substrate noise disturbances are analyzed to find a relation between the substrate noise characteristics and spur magnitudes. Theoretically the impulse sensitivity function (ISF) approach is used to analyze device sensitivity to substrate noise. Finally, a significant link between device sensitivity functions, low-frequency substrate disturbances and the VCO side-band spectral power, is demonstrated. According to this study, we conclude that a global approach which only considers power supply bounces in mixed IC's is not sufficient to analyze the sensitivity of RF integrated oscillators to low frequency substrate noise.     

太赫兹平面肖特基二极管参数模型

根据太赫兹平面肖特基二极管物理结构,在理想二极管SPICE参数模型的基础上建立了二极管小信号等效电路模型。依据该二极管等效电路模型设计了基于共面波导（CPW）去嵌方法的二极管S参数在片测试结构,并对其在0.1~50 GHz、75~110 GHz频率范围内进行了高频小信号测试,利用测试结果提取了高频下二极管电路模型中各部分电容、电阻以及电感参数。将相应的高频下电容与电阻参数分别与低频经验公式电容值和直流I-V测试提取的电阻值进行了对比,并利用仿真手段对高频参数模型进行了验证。完整的参数模型以及测试手段相较于理想二极管SPICE模型和传统的参数提取方法可以更为准确地表征器件在高频下的工作状态。该建模思路可用于太赫兹频段非线性电路的优化设计。