A broad-band waveguide grating coupler with a subwavelength grating mirror

A new diffractive device for light coupling between a planar optical waveguide and free space is proposed. The device utilizes a second-order waveguide grating to diffract the fundamental waveguide mode into two free propagating beams and a subwavelength grating (SWG) mirror to combine the two free propagating beams into a single beam. The finite-difference time-domain (FDTD) simulations show that the SWG mirror improves the coupling efficiency of the waveguide fundamental mode into the single out-coupled beam from about 30% to 92%. A high efficiency (>90%) is predicted for a broad wavelength range of 1520-1580nm. The proposed device is compact (/spl sim/80 /spl mu/m in length) and it eliminates the need for blazing the waveguide grating.     

Low-cost 1.55-/spl mu/m InGaAsP-InP spot size converted (SSC) laser with conventional active layers

We report the realization of a low cost 1.55-/spl mu/m spot size converted (SSC) laser using conventional SCH-MQW active layers. The laser consists of a rectangular gain section, a linear taper and a passive waveguide. The lateral taper and the passive waveguide are fabricated on the same lower SCH layer, using conventional photolithography and RIE (reactive ion etching). The device exhibits low beam divergence of 6.6/spl deg//spl times/10.9/spl deg/ and -2.2-dB coupling loss with a cleaved single-mode fiber. The 1-dB alignment tolerance is /spl plusmn/2.15 /spl mu/m in vertical direction and /spl plusmn/2.3 /spl mu/m in lateral direction, respectively.     

Optical directional coupler based on Si-wire waveguides

We fabricated optical directional couplers with Si-wire waveguides and demonstrated their fundamental characteristics. Their coupling-length was extremely short, several micrometers, because of strong optical coupling between the waveguide cores. Wavelength demultiplexing functions were also demonstrated for devices with a long coupled waveguide. Optical output from a device 800 /spl mu/m long changed reciprocally with 2.5-nm wavelength spacing between the parallel and cross ports.     

High-voltage normally off GaN MOSFETs on sapphire substrates

Gallium nitride self-aligned MOSFETs were fabricated using low-pressure chemical vapor-deposited silicon dioxide as the gate dielectric and polysilicon as the gate material. Silicon was implanted into an unintentionally doped GaN layer using the polysilicon gate to define the source and drain regions, with implant activation at 1100/spl deg/C for 5 min in nitrogen. The GaN MOSFETs have a low gate leakage current of less than 50 pA for circular devices with W/L=800/128 /spl mu/m. Devices are normally off with a threshold voltage of +2.7 V and a field-effect mobility of 45 cm/sup 2//Vs at room temperature. The minimum on-resistance measured is 1.9 m/spl Omega//spl middot/cm/sup 2/ with a gate voltage of 34 V (W/L=800/2 /spl mu/m). High-voltage lateral devices had a breakdown voltage of 700 V with gate-drain spacing of 9 /spl mu/m (80 V//spl mu/m), showing the feasibility of self-aligned GaN MOSFETs for high-voltage integrated circuits.     

1.55-/spl mu/m InP-InGaAsP Fabry-Perot lasers with integrated spot size converters using antiresonant reflecting optical waveguides

We demonstrate a new concept for InGaAsP-InP 1.55-/spl mu/m Fabry-Perot lasers integrated with spot size converters using type-A antiresonant reflecting optical waveguides. The fabrication of such devices allows to avoid the growth of thick layers of quaternary material with low Ga and As fraction, which are difficult to achieve and grow. Reduced far-field divergence angles (10/spl deg/ /spl times/ 27/spl deg/) and improved coupling to cleaved standard single-mode fibers (2.6-dB coupling loss) are achieved. The proposed device is compatible with conventional epitaxial techniques and lithographic methods.     

Propagation-mode-controlled fabrication of self-written waveguide in photosensitive polyimide for single-mode operation

We have developed a new fabrication method of single-mode self-written waveguide by controlling the propagation mode in an optical fiber. This method is very appropriate for repeatable fabrication of the single-mode self-written waveguide. Since a Gaussian-like near-field pattern is required for the fabrication of a tiny and uniform waveguide core, the propagation mode in a conventional optical communication fiber was controlled by coupling with an optical fiber having 3-/spl mu/m core, which shows a single-mode operation at visible wavelength region. Single-mode propagation at optical communication wavelength was confirmed for the fabricated self-written waveguide. The evaluated core diameter of the self-written waveguide was /spl sim/9.5 /spl mu/m.     

Room-temperature continuous-wave operation of GaInNAsSb laser diodes at 1.55 /spl mu/m

The first 1.55 /spl mu/m room-temperature continuous-wave (CW) operation of GaAs-based laser diodes utilising GaInNAsSb/GaNAs double quantum well active regions grown by molecular beam epitaxy is reported. In electrically-pumped CW operation the narrow ridge waveguide devices have a room temperature lasing wavelength of 1550 nm near threshold, increasing to 1553 nm at thermal rollover. The CW threshold current was 132 mA for a 3/spl times/589 /spl mu/m device, with a characteristic temperature of 83 K, measured in pulsed mode between 20 and 70/spl deg/C.     

Ultrashort optical pulse generation with a mode-locked long-wavelength (1075-1085 nm) InGaAs-GaAs semiconductor laser

Optical pulses are generated by passive and hybrid mode-locking of a long wavelength (1075-1085 nm) InGaAs-GaAs ridge waveguide laser grown by gas source molecular beam epitaxy. The devices are fabricated with two sections, one of which contains a bend in the waveguide for coupling to an external linear cavity. Pulses 2-5 ps in duration have been generated with average powers ranging from 750 /spl mu/W to 1.8 mW. Pulse compression yields durations as short as 570 fs. Post amplification with a narrow stripe InGaAs-GaAs semiconductor optical amplifier increases the average output power up to 13 mW.     

Photonic integrated circuits by DUV-induced modification of polymers

The results achieved with polymer Y-splitters, codirectional couplers, and multimode interference couplers, realized by deep ultraviolet lithography are presented. The devices are designed and fabricated for the 1.55-/spl mu/m wavelength region and have a waveguide loss of 1 dB/cm. The waveguide width is 7.5 /spl mu/m. The fiber-chip coupling loss is 0.5 dB per facet. The polarization-dependent loss is <0.15 dB.     

1.5-/spl mu/m InGaAsP-InP slab-coupled optical waveguide lasers

We report the demonstration of high-power semiconductor slab-coupled optical waveguide lasers (SCOWLs) operating at a wavelength of 1.5 /spl mu/m. The lasers operate with large (4/spl times/8 /spl mu/m diameter) fundamental mode and produce output power in excess of 800 mW. These structures have very low loss (/spl sim/0.5 cm/sup -1/) enabling centimeter-long devices for efficient heat removal. The large fundamental mode allows 55% butt-coupling efficiency to standard optical fiber (SMF-28). Comparisons are made between SCOWL structures having nominal 4- and 5-/spl mu/m-thick waveguides.     

High-power nearly diffraction-limited AlGaAs-InGaAs semiconductor slab-coupled optical waveguide laser

Beam-quality measurements on the output of a 915-nm AlGaAs-InGaAs-GaAs slab-coupled optical waveguide laser (SCOWL) are reported. This device had a nearly circular mode (3.8 /spl mu/m by 3.4 /spl mu/m 1/e/sup 2/ widths in the near-field) and was capable of a single-ended continuous-wave output power of greater than 1 W. Measurements of M/sup 2/ indicate that the SCOWL output beam is nearly diffraction-limited in both directions with M/sub x//sup 2/ /spl sim/ M/sub y//sup 2/ /spl sim/ 1.1 over the entire range of output powers measured.     

Evanescently coupled photodiodes integrating a double-stage taper for 40-Gb/s applications-compared performance with side-illuminated photodiodes

The design, fabrication, and performance of double-stage taper photodiodes (DSTPs) are reported. The objective of this work is to develop devices compatible with 40-Gb/s applications. Such devices require high efficiency, ultrawide band, high optical power handling capability, and compatibility with low-cost module fabrication. The integration of mode size converters improves both the coupling efficiency and the responsivity with a large fiber mode diameter. Responsivity of 0.6 A/W and 0.45 A/W are achieved with a 6-/spl mu/m fiber mode diameter and cleaved fiber, respectively, providing relaxed alignment tolerances (/spl plusmn/1.6 /spl mu/m and /spl plusmn/2 /spl mu/m, respectively), compatible with cost-effective packaging techniques. DSTPs also offer a wide bandwidth greater than 40 GHz and transverse-electric/transverse-magnetic polarization dependence lower than 0.2 dB. Furthermore, a DSTP saturation current as high as 11 mA results in optical power handling greater than +10 dBm and a high output voltage of 0.8 V. These capabilities allow the photodiode to drive the decision circuit without the need of a broad-band electrical amplifier. The DSTP devices presented here demonstrate higher responsivities with large fiber mode diameter and better optical power handling capabilities and are compared with classical side-illuminated photodiodes.     

5/spl times/9 integrated optical star coupler in silicon-on-insulator technology

We describe fabrication of the first optical star coupler in silicon-on-insulator (SOI) technology. The 5/spl times/9 coupler consists of two silicon rib waveguide arrays with a radiative slab waveguide region. The star geometry was analyzed and designed using the beam propagation method. The coupler exhibits low loss (average excess insertion loss /spl alpha//spl sim/1.3 dB) and good coupling uniformity (standard deviation /spl sigma//spl sim/1.4 dB) at /spl lambda/=1.55 /spl mu/m. It represents a key component for realization of photonic circuits in a silicon integrated circuit technology.     

High-efficiency 1.3 /spl mu/m InAsP-GaInP MQW electroabsorption waveguide modulators for microwave fiber-optic links

High-efficiency electroabsorption waveguide modulators have been designed and fabricated using strain-compensated InAsP-GaInP multiple quantum wells at 1.32-/spl mu/m wavelength. A typical 200-/spl mu/m-long modulator exhibits a fiber-to-fiber optical insertion loss of 9 dB and an optical saturation intensity larger than 10 mW. The 3-dB electrical bandwidth is in excess of 20 GHz with a 50-/spl Omega/ load termination. When used in an analog microwave fiber-optic link without amplification, a RF link efficiency as high as -38 dB is achieved at 10 mW input optical carrier power. These analog link characteristics are the first reported using MQW electroabsorption waveguide modulators at 1.32 /spl mu/m.     

Metal-defined polymeric variable optical attenuator

A variable optical attenuator (VOA) based on a metal-defined polymeric optical waveguide has been demonstrated for the first time. The metal film stressor deposited on top of the upper cladding layer not only produces the refractive index change within the core layer, but also acts as a thin-film heater allowing thermal tuning of the optical power within a metal-defined optical waveguide. Fabricated devices exhibit greater than 25 dB of optical attenuation with an applied electrical current of /spl sim/40 mA at 1550-nm wavelength. The switching speed of the VOA exhibits 800 /spl mu/s of rising and 720 /spl mu/s of falling time.     

Self-organized lightwave network based on waveguide films for three-dimensional optical wiring within boxes

This paper presents core technologies for a self-organized microoptical system (SELMOS) within optoelectronic computers; mass-productive fabrication processes of waveguide films and new types of self-organized lightwave networks (SOLNETs) for three-dimensional (3-D) optical wiring with optical Z-connections. Waveguide films are fabricated by the built-in mask method, which is reusable and can construct surface-normal mirrors/filters at one time within photolithographic accuracy. Beveled core edge walls are made by the tilted ultraviolet (UV) exposure through the built-in mask using a photodefinable material. Near- and far-field patterns reveal that the walls act as micromirrors for optical Z-connections. SOLNET is a network consisting of self-organized coupling waveguides between misaligned optical devices. The self-organization is generated in a photorefractive material by self-focusing of the two write beams from the two devices. Direct SOLNET, where wavelengths of the write beam and the signal beam are the same, is demonstrated using a laser diode. Reflective SOLNET, where one of the two write beams is replaced with a reflected write beam from the edge of the coupled device, realizes two-beam-writing SOLNET in a one-beam-writing configuration. It is especially effective when the coupled device cannot transmit write beams. The proof-of-concept is demonstrated both theoretically and experimentally. These results indicate a possibility to form 3-D optical wiring simply in SELMOS.     

Beam steering in high-power CW quantum-cascade lasers

We report the light-current (L-I), spectral, and far-field characteristics of quantum cascade lasers (QCLs) with seven different wavelengths in the /spl lambda/=4.3 to 6.3 /spl mu/m range. In continuous-wave (CW) mode, the narrow-stripe (/spl ap/13 /spl mu/m) epitaxial- side-up devices operated at temperatures up to 340 K, while at 295 K the CW output power was as high as 640 mW with a wallplug efficiency of 4.5%. All devices with /spl lambda//spl ges/4.7 /spl mu/m achieved room-temperature CW operation, and at T=200 K several produced powers exceeding 1 W with /spl ap/10% wallplug efficiency. The data indicated both spectral and spatial instabilities of the optical modes. For example, minor variations of the current often produced nonmonotonic hopping between spectra with envelopes as narrow as 5-10 nm or as broad as 200-250 nm. Bistable beam steering, by far-field angles of up to /spl plusmn/12/spl deg/ from the facet normal, also occurred, although even in extreme cases the beam quality never became worse than twice the diffraction limit. The observed steering is consistent with a theory for interference and beating between the two lowest order lateral modes. We also describe simulations of a wide-stripe photonic-crystal distributed-feedback QCL, which based on the current material quality is projected to emit multiple watts of CW power into a single-mode beam at T=200 K.     

Experimental verification of numerically optimized photonic crystal injector, Y-splitter, and bend

We present the experimental measurement of a photonic crystal (PhC) device comprising an injector, Y-splitter, and 60/spl deg/ bend. The complete device consists of a 9-/spl mu/m-long injector tapering down from 5 /spl mu/m into a triangular-lattice-of-holes single-line defect waveguide with period a=430 nm and 36.2% air filling factor (corresponding to a radius over period (r/a) ratio of 0.30), an optimized Y-junction, 60/spl deg/ bend and output injectors, with a total device footprint of 30 /spl mu/m. This is etched into a GaAs/AlGaAs heterostructure using chlorine/argon chemically assisted ion beam etching (CAIBE). An erbium-doped fiber amplifier (EDFA)-based source and Fabry-Perot technique are used to characterize the device. The device displays a bandwidth of approximately 110 nm in the 1.55 /spl mu/m window, and a transmission of 70% relative to the same length of 5-/spl mu/m-wide waveguide. This is compared with three-dimensional finite-difference time-domain (3-D FDTD) results, which have a bandwidth and transmission of 120 nm and 75%, respectively. The highlight of this paper is the close agreement of the numerically optimized complete microcircuit with its experimental equivalent, and the significant improvement in bandwidth over previous work on Y-junctions.     

Planar lightwave integrated circuits with embedded actives for board and substrate level optical signal distribution

This paper explores design options for planar optical interconnections integrated onto boards, discusses fabrication options for both beam turning and embedded interconnections to optoelectronic devices, describes integration processes for creating embedded planar optical interconnections, and discusses measurement results for a number of integration schemes that have been demonstrated by the authors. In the area of optical interconnections with beams coupled to and from the board, the topics covered include integrated metal-coated polymer mirrors and volume holographic gratings for optical beam turning perpendicular to the board. Optical interconnections that utilize active thin film (approximately 1-5 /spl mu/m thick) optoelectronic components embedded in the board are also discussed, using both Si and high temperature FR-4 substrates. Both direct and evanescent coupling of optical signals into and out of the waveguide are discussed using embedded optical lasers and photodetectors.     

Investigation of optical feedback in high-speed electroabsorption modulated lasers with a window region

The optimum waveguide design for optical feedback reduction in a 10-Gb/s electroabsorption modulated laser has been discussed. A device with a 30-/spl mu/m-long window region exhibited as much as 10-15-dB reduction, which is verified by experimental results and the beam propagation calculation. Using a tilted waveguide with the window region, the feedback factor is reduced to as low as -40 dB. Besides low optical feedback, the tilted-and-straight modulator has a sufficient dc extinction ratio and a far-field profile allowing larger than 60% fiber-coupling efficiency.