PbTe中红外光伏探测器

利用自主的分子束外延(MBE)技术在CdZnTe( 111)基底上生长PbTe半导体探测器材料,通过在PbTe薄膜上沉积In2 O3透明导电薄膜、ZnS绝缘保护层和In薄膜做电极,制成PbTe结型中红外光伏探测器.在77 K温度下,器件响应波长为1.5～5.5 μm,实验测量的探测率为2×1010 cm·Hz1/2W-...     

近期SPIE会议录

红外探测器材料(Proc.SPIE.V.285,Apr.1981)1.IV-VI族化合物半导体的统一特性和发展前景2.外延薄膜IV-VI族探测器:器件性能和基本的材料特性3.外延薄膜铅盐红外探测器的制备4.Pb/PbS_0.5Se_0.5界面和Pb/PbS_0.5Se_0.5光电二极管的特性5.IV-VI族化合物缺陷态的光学研究6.在PbTe上表面空间电荷层的物理性质7.IV-VI族半导体在磁场中的特性     

PbTe／PbSnTe液相外延溶液

为了研究多元红外探测器响应波长均匀性,用PbTe/PbSnTe液相外延单相溶液进行了实验。本文论述了单相溶液的配比、结晶温度的测定、外延温度曲线、外延Pb_(1-x)Sn_xTe薄膜和溶液的分析以及用该溶液制备的PbTe/PbSnTe异质光伏16元红外探测器的性能。     

法国Sofradir公司总部将乔迁新址谋求全面发展——各类红外探测器研制现状简介(下)

5甚长波红外探测器 这项研制工作的目标是,通过制造截止波长为16 μm、工作温度为55 K的红外焦平面阵列提高人们对甚长波红外波段的认识水平.试验中,研究人员将1个特制的MCT探测层混成在Sofradir公司生产的CL176型标准硅读出集成电路(320×256元、像元间距为30 μm、电荷处理能力大于36 Me-)上.其中,探测层主要分为三部分:(I) CdZnTe衬底(在0.8 μm至红外波段是透明的);(2)用液相外延(LPE)技术在衬底上生长的MCT敏感层;(3)在有效波段内可实现最大光透过率的ZnS抗反射(AR)涂层.     

128元非致冷氧化钒红外探测器的制作

采用新工艺在氮化硅衬底上制备了室温时电阻温度系数为 - 0 .0 2 1K-1的氧化钒薄膜 ,以此为基础 ,利用光刻和反应离子刻蚀工艺在硅衬底上制作了 12 8元氧化钒红外探测器 .为了降低探测器敏感元与衬底间的热导 ,设计制作了自支撑的微桥结构阵列 .测试结果显示探测器的响应率和探测率在 8～ 12 μm的长波红外波段处分别达到10 4V/W和 2× 10 8cmHz1/ 2 W-1.     

混成式热释电非制冷红外焦平面探测器研究

热释电非制冷红外焦平面探测器在军民领域具有广阔的应用前景.为了实现探测器的国内工程化研制,采用混成式技术,成功研制了基于锆钛酸铅(PZT)铁电陶瓷材料,像元尺寸为35 μm×35μm,列阵规模为320×240元的非制冷红外焦平面探测器.通过自主设计,研发的非制冷焦平面测试平台,得到了此器件的基本性能参数平均电压响应率1.1×105V/W,平均探测率5.6×107cm·Hz1/2·W-1,并实现了该探测器热成像.结合实际的研究工作,较为系统地介绍和讨论了热释电非制冷红外焦平面研制过程中各项关键技术.在器件光电响应测试数据分析的基础上,进一步提出下一阶段研究工作的重点和器件性能优化的方向.     

AIGaN紫外光电导探测器的研究

在蓝宝石(0001)衬底上采用金属有机物化学气相淀积(MOCVD)方法生长了未掺杂的Al0.15Ga0.85N外延层,并以此为材料制作了光电导探测器,实验发现探测器具有显著的紫外光响应.分析了探测器持续光电导效应(PPC)的产生机理.     

IInN0.01Sb0.99薄膜的红外反射光谱及探测特性和退火的影响

对基于GaAs失配衬底的新型红外探测材料InN0.01Sb0.99薄膜的远红外反射光谱, 以及制备成光电导器件后的黑体响应和光电流谱进行了测试, 获得了80 K温度下, 响应峰值约为4.4 μm、半高宽约为3.5 μm、截止波长约为5.7 μm的中波宽带响应红外探测原型器件.研究了退火对InN0.01Sb0.99薄膜光电导器件性能的影响, 发现退火能够改善晶体质量, 提高器件的响应能力, 并减小Moss-Burstein效应的影响.     

昆明物理研究所大面积水平推舟液相外延碲镉汞薄膜技术进展

报道了近年来昆明物理研究所在富碲水平推舟液相外延碲镉汞外延薄膜制备技术方面的进展。2019年以来,突破了?120 mm碲锌镉晶体定向生长技术,使碲锌镉衬底沉积相和夹杂相密度≤5×103 cm－2,位错腐蚀坑密度（EPD）≤4.0×104 cm－2,?120 mm（111）晶圆衬底的Zn组份分布极差≤0.36%。基于碲锌镉衬底技术的进步,液相外延碲镉汞薄膜的最大生长尺寸达到了70 mm×75 mm,薄膜位错腐蚀坑密度均值为5×104 cm－2,X射线双晶回摆曲线半峰宽（DCRC-FWHM）≤35 arcsec,部分可控制到25 arcsec以下;50 mm×60 mm尺寸长波碲镉汞薄膜的厚度极差≤±1.25 μm,室温截止波长极差≤±0.1 μm,中波碲镉汞薄膜相应指标分别为≤±1 μm、≤±0.05 μm。材料技术的进展促进了制冷型碲镉汞探测器产能提升和成本的降低,也支撑了高性能长波/甚长波探测器、高工作温度（HOT）探测器以及2048×2048、4096×4096等甚高分辨率高性能探测器的研制。     

2～5μm InAs/GaSb超晶格红外探测器

采用分子束外延方法在GaSb和GaAs衬底上生长了不同周期厚度的InAs/GaSb高质量Ⅱ型能带结构超晶格红外探测器,其探测波长覆盖2～5 μm红外波段.采用高分辨透射电子显微镜、原子力显微镜、X射线衍射测试、室温与低温光电流响应谱及室温与低温光荧光谱等多种测试手段检验了分子束外延生长在不同衬底上的超晶格材料质量与光学...     

沉积温度对PbTe薄膜结构和光学性能的影响

采用电阻热蒸镀法,分别以不同的沉积温度在锗基底上制备了PbTe薄膜。用X射线衍射仪(XRD)、原子力显微镜(AFM)和红外光谱测试仪(System2000)表征了不同沉积温度下薄膜的微结构和光学特性.结果表明,沉积温度对PbTe薄膜的结构、择优取向、生长方向、晶粒大小、禁带宽度以及短波吸收限均有明显影响.     

富碲碲化铅薄膜的晶体结构、表面形貌、元素深度分布和中红外光学常数

对由富碲( <1mol.% )碲化铅晶体材料热蒸发制备的薄膜进行了表征.结果表明:薄膜是多晶的,具有NaCl型晶体结构,表面晶粒分布均匀,在膜层的深度方向约 170nm内富碲的组分均匀分布.对比薄膜表面抛光前后的中红外光学常数表明表面散射对薄膜光学性质的影响极小.     

Synthesis of PbTe and PbSe nanoparticles under the influence of hydrochloric acid and carbon dioxide

Parameters that influence the growth of nanomaterials have been extensively studied. Recent studies have shown that the addition of halogen can influence the growth mechanism and properties of nanomaterials. We have used simple reduction thermolysis method to synthesize hexadecylamine (HDA) and oleylamine (OLA) capped PbTe and PbSe nanoparticles. We added a small amount of hydrochloric acid (HCl) and bubbled carbon dioxide (CO₂) to determine their effect on the particle morphology. For PbTe the particle morphology was determined by the capping group with the HDA capped PbTe in the form of rods whereas the OLA capped particles were hexagonal in shape. The addition of HCl gave shorter rods in the case of HDA PbTe while in the case of the OLA capped PbTe regular shaped hexagonal cubes were observed. The bubbling of CO₂ resulted in the change of shape from rods to cubes. Both the HDA and OLA capped PbSe nanoparticles were oblate in shape. The bubbling of CO₂ into the reaction system resulted in PbSe nanoparticles with a hexagonal morphology. Powder X-ray diffraction studies revealed a pure cubic phase for both PbTe and PbSe nanomaterials. The optical absorption spectra for both HDA /OLA capped PbTe and PbSe showed evidence of quantum confinement.     

氟镓酸盐红外玻璃窗口多波段增透保护膜研制

氟镓酸盐玻璃是一种性能良好的红外光窗材料。为了提升窗口观测、探测及防护性能,在氟镓酸盐基底上设计和制备了0.4~0.9 μm、1.064 μm、3.7~4.8 μm三波段复合增透保护膜。根据光学性能及环境稳定性要求选择薄膜材料并对膜系进行了设计,然后利用电子束蒸发方法对多层膜进行了制备。测量结果表明,2.9 μm处的水吸收峰拉低了中红外波段的透过率。通过改进工艺及后处理等途径提高了膜层致密度,有效抑制了膜层的水吸收。利用沸水浸泡法对镀膜元件的环境稳定性进行了实验验证。结果表明,经过离子束辅助沉积及退火处理的薄膜样品具有较好的光学性能和环境适应性。     

Growth and characterization of inTISb for IR-detectors

Epitaxial In_1-xTl_xSb films with compositions up to x = 0.1 have been demonstrated using the metalorganic chemical vapor deposition technique on InSb and GaAs substrates. A specially designed high-temperature source delivery system was used for the low vapor pressure cyclopentadienylthallium source. Tl-compositions in the deposited films were measured by Rutherford backscattering spectroscopy which confirmed the incorporation of up to 10% Tl. Room temperature infrared transmission spectra of InTISb exhibited considerable absorption beyond 7 μm. Photoconductive detectors were fabricated in InTISb films grown on semi-insulating GaAs. Spectral response measurements showed substantial photoresponse at 8.5 to 14 μm. In spite of the large lattice-mismatch (≈14%) between InTISb and GaAs, photoconductive detectors exhibited black-body detectivities (D^* _bb) of 5.0 × 10⁸ cm-Hz^1/2W⁻¹ at 40K.     

Transport Properties of Doped,Nanostructured IV–VI Epitaxial Films Grown by MBE

Here we report on the first results of PbTe epitaxial films with high Bi content above doping concentrations grown on BaF₂ in order to obtain nanoscale precipitates. The crystal structure is investigated by x-ray diffraction (XRD) measurements and no other phases than well-oriented PbTe could be found. These layers have been investigated by Hall-effect and Seebeck-effect measurements. The dependence of the Seebeck coefficient on the carrier concentration cannot be explained by simple Boltzmann statistics. Fourier-transform infrared (FTIR) transmission spectra also show some irregularities. These phenomena are interpreted as hints to nanoscale inclusions. The thermal conductivity is measured with the time-domain thermal reflectance method, developed by D. Cahill, to complete the thermoelectric characterizations.     

ZnO光电导紫外探测器的制备和特性研究

以Si(111)衬底,用脉冲激光沉积(PLD)法制得C轴高度择优取向的ZnO薄膜,并利用剥离技术制备了ZnO光导型紫外探测器.Al叉指状电极是由平面磁控溅射技术沉积得到的.对Al/ZnO/Al的伏安特性和紫外光响应的研究表明,金属铝和ZnO能形成很好的欧姆接触,紫外探测器的电阻值在100KΩ左右.在紫外区域,其5V偏压下的光响应度为0.5A/W.     

Saturation and Polarization Characteristics of 1.56 μm Optical Probe Pulses in a LTG-GaAs Photoconductive Antenna Terahertz Detector

The characteristics of low temperature-grown GaAs photoconductive antenna (PCA) terahertz detectors probed by 1.56 μm laser pulses are investigated. The influence of TM and TE polarized probe, as well as the saturation characteristics are studied for 2 μm- and 5 μm-gap PCA’s. Different polarization characteristics at low probe powers and at the saturation regimes were observed. Results are explained in terms of the polarization-dependent photocarrier distribution at the PCA gap arising from tight focusing. This work also demonstrates using a 1.56 μm probe for a GaAs PCA to achieve ~60 dB SNR; matching its performance characteristics for above-bandgap probes.     

Thermal Conductivity and Phonon Scattering Processes of ALD Grown PbTe–PbSe Thermoelectric Thin Films

This work studies the thermal conductivity and phonon scattering processes in a series of n‐type lead telluride‐lead selenide (PbTe–PbSe) nanostructured thin films grown by atomic layer deposition (ALD). The ALD growth of the PbTe–PbSe samples in this work results in nonepitaxial films grown directly on native oxide/Si substrates, where the Volmer–Weber mode of growth promotes grains with a preferred columnar orientation. The ALD growth of these lead‐rich PbTe, PbSe, and PbTe–PbSe thin films results in secondary oxide phases, along with an increase microstructural quality with increased film thickness. The compositional variation and resulting point and planar defects in the PbTe–PbSe nanostructures give rise to additional phonon scattering events that reduce the thermal conductivity below that of the corresponding ALD‐grown control PbTe and PbSe films. Temperature‐dependent thermal conductivity measurements show that the phonon scattering in these ALD‐grown PbTe–PbSe nanostructured materials, along with ALD‐grown PbTe and PbSe thin films, are driven by extrinsic defect scattering processes as opposed to phonon–phonon scattering processes intrinsic to the PbTe or PbSe phonon spectra. The implication of this work is that polycrystalline, nanostructured ALD composites of thermoelectric PbTe–PbSe films are effective in reducing the phonon thermal conductivity, and represent a pathway for further improvement of the figure of merit (ZT), enhancing their thermoelectric application potential.     

The use of multiple internal reflection on extrinsic silicon infrared detection

The sensitivity of a silicon extrinsic infrared detector is enhanced by increasing the absorption path by multiple internal reflection utilizing V-grooves on a [100]-oriented silicon wafer for light coupling. Planar detectors were fabricated with gold-doped silicon as a prototype study, in which the spectral response, the influences of temperature, and the photoconductive detector quantum efficiency were characterized. The result indicates that the peak of the photoconductive spectrum is located at 0.9 eV, which is equal to 1.67 times the threshold for extrinsic photoconduction, as generally expected from the theoretical calculations.