共查询到19条相似文献,搜索用时 156 毫秒
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介绍了目前基于表面势的MOSFET集约模型研究的最新进展,及考虑量子效应时对表面势进行修正的一般方法。并从三角势阱近似出发考虑量子效应,得到了一个新的表面势解析模型,并与经典理论和数值模拟结果进行了比较。模型简单、准确,且物理意义清晰,适合于植入到基于表面势的集约模型中。 相似文献
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建立了双栅MOS器件反型层积分电荷Qi的集约模型.该模型考虑了反型层载流子的量子限制效应,使其适用于纳米尺度的器件应用.基于以前关于Ge的研究,通过建立关于Qi的表面势表达式,可得到一个隐含Qi的方程,从而求得Qi的值.将该模型计算结果与目前已发表的模型计算结果以及自洽求解一维泊松方程和薛定锷方程的数值模拟程序Schred的模拟结果进行了比较.结果表明,该模型在较大的硅层厚度变化范围内均与数值模拟程序的计算结果吻合得很好,显示出其相对与目前发表的其他模型的优越性. 相似文献
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建立了双栅MOS器件反型层积分电荷Qi的集约模型.该模型考虑了反型层载流子的量子限制效应,使其适用于纳米尺度的器件应用.基于以前关于Ge的研究,通过建立关于Qi的表面势表达式,可得到一个隐含Qi的方程,从而求得Qi的值.将该模型计算结果与目前已发表的模型计算结果以及自洽求解一维泊松方程和薛定锷方程的数值模拟程序Schred的模拟结果进行了比较.结果表明,该模型在较大的硅层厚度变化范围内均与数值模拟程序的计算结果吻合得很好,显示出其相对与目前发表的其他模型的优越性. 相似文献
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Two-dimensional quantum effects in nanoscale MOSFETs 总被引:3,自引:0,他引:3
In this paper, a full two-dimensional (2-D) quantum mechanical (QM) device simulator for deep submicron MOSFETs is presented. The model couples a 2-D Schrodinger-Poisson solver with a semiclassical transport model. The validity of the proposed model is first tested against a QM model for transport, developed as a benchmark. Then, QM effects on nanoscale MOSFETs performance are quantitatively addressed and discussed. It is shown that QM effects strongly influence the device performance, namely subthreshold slope drain-induced barrier lowering and short-channel effects. These results show that full QM simulations will become a mandatory issue for nanoscale MOSFETs modeling and design 相似文献
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We present a new I–V model for a long-channel surrounding-gate (SG) metal–oxide–semiconductor field-effect transistor (MOSFET). SG MOSFET is a strong candidate for next generation nanoscale devices due to a high electrostatic channel control, which in turn substantially reduces the short-channel effect. The new model takes into account quantum mechanical (QM) effects in the SG MOSFET using a double triangular QM well model in the strong inversion regime. In contrast with the old model, we consider the V g dependence of the QM effect. New model yields excellent agreement with 2-D numerical simulation results for various radii and gate oxide thicknesses of the SG MOSFET. 相似文献
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Two problems in the self-consistent, electrothermal co-simulation of nanoscale devices, are discussed. It is shown that the construction of dynamic compact thermal models for nanoscale devices, based on solution of the hyperbolic (wavelike) heat transport equation, can follow essentially the same approach as the authors' analytical thermal impedance matrix method for the parabolic (diffusive) equation. The physicality of the hyperbolic equation is discussed in the light of calculated results. The analytical impedance matrix method for the time-independent case is employed in a thermally self-consistent device Monte Carlo simulation, illustrating the potential for detailed study of nanoscale electrothermal effects. 相似文献
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As the conventional silicon metal‐oxide‐semiconductor field‐effect transistor (MOSFET) approaches its scaling limits, quantum mechanical effects are expected to become more and more important. Accurate quantum transport simulators are required to explore the essential device physics as a design aid. However, because of the complexity of the analysis, it has been necessary to simulate the quantum mechanical model with high speed and accuracy. In this paper, the modeling of double gate MOSFET based on an adaptive neuro‐fuzzy inference system (ANFIS) is presented. The ANFIS model reduces the computational time while keeping the accuracy of physics‐based models, like non‐equilibrium Green's function formalism. Finally, we import the ANFIS model into the circuit simulator software as a subcircuit. The results show that the compact model based on ANFIS is an efficient tool for the simulation of nanoscale circuits. 相似文献
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The analytical modeling of nanoscale devices is an important area of computer-aided design for fast and accurate nanoelectronic design and optimization.In the present paper,a new approach for modeling semiconductor devices,nanoscale double gate DG MOSFETs,by use of the gradual channel approximation(GC) approach and genetic algorithm optimization technique(GA) is presented.The proposed approach combines the universal optimization and fitting capability of GA and the cost-effective optimization concept of quantum correction,to achieve reliable,accurate and simple compact models for nanoelectronic circuit simulations.Our compact models give good predictions of the quantum capacitance,threshold voltage shift,quantum inversion charge density and drain current.These models have been verified with 2D self-consistent results from numerical calculations of the coupled Poisson-Schrodinger equations.The developed models can also be incorporated into nanoelectronic circuit simulators to study the nanoscale CMOS-based devices without impact on the computational time and data storage. 相似文献
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Fuchs E. Dollfus P. Le Carval G. Barraud S. Villanueva D. Salvetti F. Jaouen H. Skotnicki T. 《Electron Devices, IEEE Transactions on》2005,52(10):2280-2289
A backscattering model suitable for compact modeling of nanoscale MOSFET is developed within the Landauer flux-scattering theory. To describe the quasi-ballistic transport, a new backscattering model based on the accurate determination of ballistic and backscattering probabilities along the channel is developed. This model is based on a careful analysis of transport in device using Monte Carlo simulation. This model allows us to display the main physical quantities along the channel and to accurately describe the quasi-ballistic transport and its effects on current-voltage characteristics. 相似文献
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Shilong Pan Caiyun Lou 《Quantum Electronics, IEEE Journal of》2008,44(3):245-253
A numerical model for multiwavelength actively mode-locked erbium-doped fiber lasers (AML-EDFL) is presented. Using the model, the influences of four-wave mixing (FWM) and phase modulation effects (i.e., self-phase modulation (SPM) and cross-phase modulation (XPM)) can be studied, respectively. We use it to investigate AML-EDFLs incorporating a highly nonlinear fiber (HNLF) and explore the mechanisms for gain competition suppression (GCS). The net dispersion of the cavity is found critical for GCS. In the small dispersion regime, FWM dominates GCS, but SPM and XPM deteriorate the output pulses. In the large anomalous dispersion regime, SPM and XPM, however, enhance GCS and produce high-quality pulses. Degree of GCS is also quantitatively evaluated. The simulation results are at last confirmed by experiments. 相似文献
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Valeriy Sukharev Armen Kteyan Jun-Ho Choy Henrik Hovsepyan Ara Markosian Ehrenfried Zschech Rene Huebner 《Journal of Electronic Testing》2012,28(1):63-72
Potential challenges with managing mechanical stress distributions and the consequent effects on device performance for advanced
3D integrated circuit (IC) technologies are outlined. A set of physics-based compact models for a multi-scale simulation,
to assess the mechanical stress across the device layers in silicon chips stacked and packaged with the 3D through-silicon-via
(TSV) technology, is proposed. A calibration technique based on fitting to measured stress components and electrical characteristics
of the test-chip devices is presented. For model validation, high-resolution strain measurements in Si channels of the test-chip
devices are needed. At the nanoscale, the transmission electron microscopy (TEM) is the only technique available for sub-10 nm
strain measurements so far. 相似文献
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Fei Li Mudanai S. Register L.F. Banerjee S.K. 《Electron Devices, IEEE Transactions on》2005,52(6):1148-1158
A computationally efficient and accurate physically based gate capacitance model of MOS devices with advanced ultrathin equivalent oxide thickness (EOT) oxides (down to 0.5 nm explicitly considered here) is introduced for the current and near future integrated circuit technology nodes. In such a thin gate dielectric regime, the modeling of quantum-mechanical (QM) effects simply with the assumption of an infinite triangular quantum well at the Si-dielectric interface can result in unacceptable underestimates of calculated gate capacitance. With the aid of self-consistent numerical Schro/spl uml/dinger-Poisson calculations, the QM effects have been reconsidered in this model. The 2/3 power law for the lowest quantized energy level versus field relations (E/sub 1//spl prop/F/sub ox//sup 2/3/), often used in compact models, was refined to 0.61 for electrons and 0.64 for holes, respectively, in the substrate in the regimes of moderate to strong inversion and accumulation to address primarily barrier penetration. The filling of excited states consistent with Fermi statistics has been addressed. The quantum-corrected gate capacitance-voltage (C-V) calculations have then been tied directly to the Fermi level shift as per the definition of voltage (rather than, for example, obtained indirectly through calculation of quantum corrections to the charge centroids offset from the interface). The model was implemented and tested by comparisons to both numerical calculations down to 0.5 nm, and to experimental data from n-MOS or p-MOS metal-gate devices with SiO/sub 2/, Si/sub 3/N/sub 4/ and high-/spl kappa/ (e.g., HfO/sub 2/) gate dielectrics on (100) Si with EOTs down to /spl sim/1.3 nm. The compact model has also been adapted to address interface states, and poly depletion and poly accumulation effects on gate capacitance. 相似文献