X波段脉冲耿氏振荡器

文章描述了X波段脉冲耿氏二极管、微波电路、脉冲调制器结构和设计原理以及脉冲耿振荡器的研制结果:在9～10GHz范围内,脉冲功率一般值为5～9W,最佳值10.8W,最大效率为5.5%,最大工作比为1%.     

X波段连续输出300～400毫瓦的耿效应二极管

英帝马拉德公司正在研制X波段连续输出300～400毫瓦的耿效应二极管。它是将铜散热器焊接到有源外延层上,而不是象通常那样焊接到砷化镓衬底上。这使器件能够承受大的电流,而不出现过热现象。新器件的关键是焊接技术,砷化镓和铜之间是银锡合金蒸发层和镀金层。砷化镓工艺,8～15伏的工作电压,3～5％的效率都没有改变。该公司认为,这种较大功率的耿效应二极管可使耿效应振荡器成为专用雷达设备中的实用的本机振荡器、二次雷达脉冲收发两用机中的发射机及用于小功率微波无线电通信线路中。     

Ku波段脉冲耿氏振荡器

文章描述了脉冲耿氏管、微波电路和脉冲调制器的结构和设计原则;给出了Ku波段脉冲耿氏振荡器的研制结果:在13～15GHz范围内,脉冲功率大于5W,工作比≤1％,最大效率为5％。     

耿二极管的实验及计算机模拟分析

1.引言大容量微波通讯设备的耿二极管振荡器的发展出现很多问题。其中有在腔体稳定振荡器、宽带注入锁定振荡器和其它的耿二极管电路中的滞后现象和不稳定性。为了解决这些问题,必须测定和应用耿二极管的动态电气导纳及其偏压和频率的关系,     

S波段20W脉冲耿氏振荡器

本文描述了脉冲耿氏二极管、微波电路、脉冲调制器的结构和设计原则;给出了脉冲耿氏振荡器研制结果:在3--4GHz范围内,最大脉冲功率为20W,最大效率为5%,工作比1%。     

95千兆赫耿效应二极管振荡器

由于对参放泵源和本机振荡器等的高可靠、低噪声源的需求,在过去几年中人们增加了对毫米波振荡器的兴趣。除目前使用的各种毫米波真空管器件外,最近发展了频率高达75千兆赫的基频崩越二极管振荡器和变容管倍频源。但是,在此之前,基频砷化镓耿二极管振荡器的频率局限于75千兆赫以下。本文首次报导93.7千兆赫耿效应基频振荡     

八毫米脉冲IMPATT振荡器

本文简述了脉冲IMPATT器件的设计考虑和制造工艺以及振荡器的微波电路结构和脉冲调制器的原理。对脉冲偏置期间产生的频啁效应作了原理性说明,并提出了减小频啁带宽的方法。目前所研制的八毫米IMPATT振荡器最大的脉冲输出功率在34.2GHz下为15.7W。     

1.054微米主-被动锁模振荡器

本文报导主-被动锁模振荡器的特性。这些高可靠性振荡器的工作波长是1.054微米,其特点是不存在脉宽t_p(?)80微微秒的籽脉冲群。它们具有10~7～10~8的极高的峰-本底对比度。用一对内腔标准具,可以可靠地产生宽度为80～600微微秒的变换限脉冲。脉冲再现性优于±10％,脉冲序列的最大值再现性大约为10～20％。用阈值脉冲选择器,单脉冲选择的振幅波动可达到±5％。偶尔也能看到脉宽为50微微秒的籽脉冲群。本文给出了这种现象的理论解释。     

高脉冲重复频率大功率磁-可控硅振荡器

描述一个磁-可控硅振荡器,它可以在客量为15毫微法的电容器上形成振幅20千伏、前沿0.3微秒、重复频率达8千伏的也压脉冲。振荡器输出端上的最大平均功率为24千瓦。     

1064nm泵浦温度调谐PPLN光学参量振荡器

对脉冲泵浦的温度可调准相位匹配(QPM)光学参量振荡器(OPO)进行了研究.LD泵浦的声光调Q Nd:YAG激光器输出的1064nm脉冲激光做泵浦源,极化周期为30.7μm的单周期PPLN做光学参量振荡器的参量晶体,通过控制参量晶体的温度可以得到信号光的波长调谐输出.在LD电流17A得到信号光的平均功率最大为230mW,转化效率达13%.     

Millimeter wave pulsed gunn oscillator for low chirp radar application at W-Band

Pulsed Gunn oscillator at 94 GHz has been developed using GaAs CW Gunn diode, by choosing a proper operating point and resonant circuit. Peak power output of 25 mw at 94 GHz with a pulse width of 2 microseconds and duty factor of 2% is achieved. Bias circuit oscillations are suppressed by rising the operating voltage alongwith other circuit considerations.     

Fast frequency-switching system for frequency-shift-keying pulse-code modulation

An f.s.k. pulse modulator has been developed which uses two cavity modes for the two frequency states of a Gunn oscillator. 300 megapulse operation with about 10 mW microwave output at 13.25 and 20.7 GHz for baseband pulses of about 3 V into 50 ? was obtained.     

Thermally induced FM noise in Gunn oscillators and jitter in Gunn-effect digital devices

By considering the starting-time fluctuation of domain formation and the fluctuation of domain-formation time caused by thermal noise, the front-edge fluctuation of the output current pulse of a Gunn device is obtained. Taking the Fourier transform of the output current-pulse train with these front-edge fluctuations, we obtain the equivalent noise-current source due to the thermal noise of Gunn oscillators. Solving Kurokawa's oscillator equation including this equivalent noise-current source, an expression for thermally induced FM noise in Gunn oscillators is derived. The result is in good agreement with experimental data. These results are applied to estimate thermally induced jitter in Gunn-effect digital devices.     

Integrated Tunable Cavity Gunn Oscillator for 60-GHz Operation in Image Line Waveguide

The design, construction, and experimental test results of a mechanically tunable Gunn oscillator using a recessed diode metal coaxial cavity coupled to an image line waveguide is described. The oscillator frequency was changed by about 10-percent by varying the bias post length into the coaxial structure. The oscillator is designed so that both the Gunn diode and resonant cavity can be quickly replaced to provide extended frequency coverage and efficiency. This Gunn diode oscillator has provided up to 15-mW CW power at 60 GHz with 10-percent tuning range.     

Design fabrication of low noise Gunn diode with consideration of a thermocompression bonding effect

In order to reduce 1/f noise generated by Gunn diodes, an experimental study was made on the effects of thermocompression bonding on Gunn oscillator noise. It is found that carrier traps at dislocations introduced into the Gunn diode by the thermocompression process increase the Gunn oscillator noise significantly. An optimum thermocompression bonding condition for minimizing Gunn diode 1/f noise is described, taking into account such parameters as doping density and device area.     

3mm波相参脉冲发射组件的研究

根据3mm波段相参脉冲雷达对发射机的要求,本文拟定了基波注入锁定3mm波谐波源、3mm波连续波雪崩源和两级脉冲雪崩源级联注入锁定的放大链路方案,提出并实施了"脉间异频防泄漏技术",抑制了漏信号对系统工作的有害影响,最终实现当输入电平为2mW的6mm波信号时,3mm波输出脉冲峰值功率大于5W,脉宽约30ns.     

Novel varactor-tuned millimetre-wave Gunn oscillator

A novel design of varactor-tuned millimetre-wave second-harmonic Gunn oscillator is reported in which a varactor is mounted in a secondary cavity resonant at the fundamental frequency of the Gunn diode. This has the advantage that the varactor does not significantly load the Gunn diode at the output second-harmonic frequency, and enables the oscillator to produce the maximum possible output power from the diode while still offering varactor tuning and high Q.