WZB 0812型、WZB 1218型数字调谐振荡器

南京电子器件研究所已研制成ＷＺＢ０８１２型、ＷＺＢ１２１８型两种型号的的数字调谐振荡器,其基本参数如下：参　　数ＷＺＢ０８１２ＷＺＢ１２１８频率范围（最小）／ＧＨｚ８～１２１２～１８数字调谐位数／ｂｉｔ１２射频功率　输出（最小）／ｄＢｍ　功率温度系数（最大）／ｄＢ·Ｃ－１１３０．０２检测输出（最小）／ｄＢｍ０调谐线性度（最小）８电源±１５Ｖ,＋５Ｖ,＋２８Ｖ／２Ａ接口　射频输出　控制／电源ＳＭＡｆｅｍａｌ２５ｐｉｎ,ＤｔｙｐｅｍａｌｅＷＺＢ０８１２、ＷＺＢ１２１８型数字调谐振荡器WZB 0812型、WZ…     

大功率同轴雪崩二极管振荡器

美帝雪尔凡尼亚公司制造的SYA—3206系列的可调x波段同轴雪崩二极管振荡器的最小连续输出功率为500毫瓦,功率变化小于1分贝,工作温度为-30℃到+71℃。要求70～100伏左右的单个直流电源,用单螺旋校整即可进行调谐。此振荡器是为雷达和通讯系统中发射机     

元器件快讯

表封式压控振荡器Ｍｉｎｉ -Ｃｉｒｃｕｉｔｓ生产的ＪＴＯＳ -１５５０型宽带表封式压控振荡器的工作频率范围为１１５０～１５５０ＭＨｚ,具有２２～３２ＭＨｚ（典型）的线性调谐特性。此振荡器的典型功率输出为７ｄＢｍ,在１００ｋＨｚ的间隔下具有 -１２１ｄＢｃ／Ｈｚ的低ＳＳＢ相位噪声、 -２０ｄＢｃ的谐波压缩率和０．５～２０．０Ｖ（最小到最大）的调谐电压。这款压控振荡器尤其适用于ＧＰＳ应用系统。咨询编号 :０１１１４０更小的集成式开关国际整流器公司推出了高效、低成本强化ＩＲＩＳ集成开关 ,它将ＨＥＸＦＥＴ功率ＭＯ…     

返波振荡器的使用规范

引言“O”型返波振荡器(BWO)是一种线性电子注微波振荡器件,它在宽频和快速电子调谐方面用途极广。屏蔽永磁聚焦BWO已有覆盖频率为1～40千兆赫倍频程或波导带宽的产品;它们能典型地提供50～100毫瓦的最小功率输出。BWO能用作电子战,侦察和其它雷达接收机的本机振荡器;频率灵敏的活动目标显示器和侧面观察雷达的主控振荡器;军用和商业扫描发生器和频谱分析器的扫描信号源;电压     

一种低功耗宽频率调谐范围的伪差分环形VCO

设计了一种低功耗、宽频率调谐范围的伪差分环形压控振荡器(VCO).电路设计分为振荡环路设计和电流源设计两部分.在振荡器的振荡环路部分,提出了一种新颖的降低功耗的方法,即通过动态地调节接入振荡环路的锁存器,减小驱动电流,降低功耗;在振荡器的控制电源部分,采用gain-boost结构,设计了一款理想的可控双电流源,实现了振荡器的宽频率调谐范围.基于SMIC 65 nm工艺,在1.8V工作电压下,对振荡器进行了后仿验证.结果表明,在频率为900 MHz时,振荡器的功耗仅为3.564 mW;当控制电压在0.6～1.8 V变化时,振荡器的频率调谐范围可宽达0.495 ～1.499 GHz.     

超低相位噪声LC压控振荡器的设计

研制出了超低相位噪声压控振荡器,在保证调谐范围的前提下,采取各种措施有效降低了压控振荡器的相位噪声.设计的压控振荡器采用普通环氧板材,表面贴装工艺,国际标准封装,成本低、人工调试量小,适合规模生产.结果表明该产品的频率为796～857 MHz,调谐带宽61 MHz,调谐电压1.8～4.5 V,调谐灵敏度22.5 MHz/V,相位噪声达到-115 dBc/Hz@10 kHz,产品已达到国际各大同类产品的水平.     

一种用于IR-UWB的数控环形振荡器设计

设计了一个应用于超宽带脉冲无线电（IR-UWB）通信系统的数控环形振荡器（DCRO）.DCRO采用3调谐,包括电压粗调谐和开关变容管精调谐,逐级提高调谐精度.提出了一种新型延时单元,采用多环路结构,提高了环形振荡器的振荡频率,降低了功耗.设计采用CSMC 0.18μm互补金属氧化物半导体工艺,电源电压1.8V,使用SpectreRF仿真验证,数控环形振荡器的调谐范围为3～8.6GHz,调谐精度为2MHz,当工作频率在8.6GHz时,偏离主频10MHz处相位噪声为-112.4dBc/Hz,功耗为20mW.     

为调谐器设计的带自动幅度控制1.1GHz差分压控振荡器

为集成调谐器接收机芯片系统设计了一个带自动幅度控制回路的差分结构电容电感压控振荡器.通过采用pMOS管作为有源负阻使振荡器谐振回路可以直接接地电平,减小了寄生效应,扩大了频率调谐的线性及其范围.采用的自动幅度控制AAC回路具有元件少,噪声低,控制灵敏,调节容易,结构简单及设计方便的优点,并保证振荡器电路的性能最小地依赖于环境和制造工艺参数的变化.所设计的压控振荡器采用新加坡特许50GHz 0.35μm SiGe BiCMOS工艺流片,经测试在1MHz频率偏移处达到了-127.27dBc/Hz的相位噪声性能,具有宽的(990～1140MHz)和线性(调谐增益32.4MHz/V)的频率调谐曲线.整个振荡器电路在5V的供电电压下仅消耗6.6mA的电流,可以满足调谐器的应用需要.     

A 1.1GHz LC VCO with Automatic Amplitude Control for Tuner Applications

为集成调谐器接收机芯片系统设计了一个带自动幅度控制回路的差分结构电容电感压控振荡器.通过采用pMOS管作为有源负阻使振荡器谐振回路可以直接接地电平,减小了寄生效应,扩大了频率调谐的线性及其范围.采用的自动幅度控制AAC回路具有元件少,噪声低,控制灵敏,调节容易,结构简单及设计方便的优点,并保证振荡器电路的性能最小地依赖于环境和制造工艺参数的变化.所设计的压控振荡器采用新加坡特许50GHz 0.35μm SiGe BiCMOS工艺流片,经测试在1MHz频率偏移处达到了-127.27dBc/Hz的相位噪声性能,具有宽的(990～1140MHz)和线性(调谐增益32.4MHz/V)的频率调谐曲线.整个振荡器电路在5V的供电电压下仅消耗6.6mA的电流,可以满足调谐器的应用需要.     

高稳定度X波段变容管调谐耿氏振荡器

本文介绍了实用型X波段变容管调谐耿氏振荡器的电路结构和设计准则。采用一套改善振荡器频率温度性能的新方法,在-40～60℃温度范围内获得频率温度系数为0.01～2ppm/℃。     

An 8-18-GHz YIG-Tuned FET Oscillator

We report here on the design and construction of a YIG- tuned FET oscillator tunable over the entire 8-18-GHz frequency range. The minimum output power from this device operating into a 50-omega load is about +6 dBm. The addition of a balanced buffer amplifier increases the power to about + 12-dBm minimum. When optimized for the 12-18-GHz band, the oscillator alone generates a minimum of + 10 dBm. The oscillator/ amplifier combination produces at least +15 dBm. We discuss a number of difficulties inherent in the design of broad-band oscillators, especially fixed frequency resonances, linearity, and power drop outs at the low end of the frequency range.     

微波场效应管YIG振荡器的实验研究

本文扼要叙述了单YIG小球双调谐场效应管振荡器的设计及其优点。在2.2～4.8GHz的振荡频率范围内,输出功率大于10mW。在2.2～4.4GHz的倍频程带宽内,输出功率大于20mW,功率起伏小于3dB。     

Ku波段低相位噪声体效应管

体效应振荡器相位噪声主要决定于体效应管的噪声.文中介绍了Ku波段低相位噪声体效应管的设计与工艺实现,并制作出了与设计结果基本一致的器件.该器件在Ku波段高端输出功率大于150 mW,转换效率大于5%.将其安装于低相噪介质振荡器中,在保证一定的输出功率的情况下,相位噪声小于-98dBc/Hz(偏离载频为5 kHz时),-10dB谱线宽度小于200Hz.     

A 1.8-V 2.4/5.15-GHz dual-band LCVCO in 0.18-/spl mu/m CMOS technology

A dual band, fully integrated, low phase-noise and low-power LC voltage-controlled oscillator (VCO) operating at the 2.4-GHz industrial scientific and medical band and 5.15-GHz unlicensed national information infrastructure band has been demonstrated in an 0.18-/spl mu/m CMOS process. At 1.8-V power supply voltage, the power dissipation is only 5.4mW for a 2.4-GHz band and 8mW for a 5.15-GHz band. The proposed VCO features phase-noise of -135dBc/Hz at 3-MHz offset frequency away from the carrier frequency of 2.74GHz and -126dBc/Hz at 3-MHz offset frequency away from 5.49GHz. The oscillator is tuned from 2.2 to 2.85GHz in the low band (2.4-GHz band) and from 4.4 to 5.7GHz in the high band (5.15-GHz band).     

A low-noise fixed-tuned 300-360-GHz sub-harmonic mixer using planar Schottky diodes

This letter presents the design and fabrication of a low-noise fixed-tuned 300-360-GHz sub-harmonic mixer, featuring an anti-parallel pair of planar Schottky diodes fabricated by the University of Virginia and flip-chipped onto a suspended quartz-based microstrip circuit. The mixer exhibits a double side band (DSB) equivalent noise temperature lower than 900K over 18% of bandwidth (300-360-GHz), with 2 to 4.5mW of local oscillator (LO) power. At room temperature, a minimum DSB mixer noise temperature of 700K and conversion losses of 6.3dB are measured at 330GHz.     

A Comparison of IMPATT Oscillator Power and Frequency Above 100 GHz with Results Derived from Theoretical Models

A comparison is made of experimentally determined IMPATT oscillator frequency and power characteristics in the 90-140-GHz band with values obtained from detailed theoretical models. The results show encouraging agreement and demonstrate the potential of the modeling approach for oscillator design.     

基于CMOS工艺的太赫兹振荡器

在太赫兹频段,无源器件电容电感的品质因数低、电路的寄生参数以及MOS管的截止频率影响使太赫兹振荡器电路难以实现高功率输出。提出一种300 GHz可调谐振荡器,首先,采用改进的交叉耦合双推(Push-Push)振荡器结构,通过输出功率叠加的方法输出二次谐波300 GHz信号,增加了振荡器的输出功率并突破了MOS管截止频率,并通过增加栅极互连电感增加输出功率。其次,太赫兹振荡器摒弃传统片上可变电容调谐的方式,通过调节MOS管衬底电压改变MOS管的栅极寄生电容实现频率调谐,避免太赫兹频段引入低Q值电容,进一步增加了输出功率。提出的太赫兹振荡器采用台积电40 nm CMOS工艺,基波工作频率为154.5 GHz,输出二次谐波为 309.0 GHz,输出功率可达-3.0 dBm,相位噪声为-79.5 dBc/Hz@1 MHz,功耗为28.6 mW,频率调谐范围为303.5~315.4 GHz。     

A 60-87 GHz experimental diffraction radiation oscillator

A theoretical and experimental study of the diffraction radiation oscillator (DRO) is reported in this paper. It is the first work or its kind in China. Through a series of analysis and experimental observation for the sphere-cylindrical open cavity and the manufactured device in the Chengdu laboratory, the main experimental results are those from 2000V to 4000 V, the tube operates in the 60-87GHz band; the maximum output power is about 800 mW; and the minimum starting current is 35 mA. The quality factor of the quasi-optical resonator with the grating is 4800-6500 for the TEM_02q, mode     

A 20 GHz microwave sampler

A microwave sampler circuit which operates over the frequency band of 1-20 GHz and has a number of novel features is described. These features include a wideband microstrip-to-slot balun and a wideband active isolator the function of which is to reduce the local oscillator to RF leakage from the input port of the sampler. The signal-to-noise ratio over the input bandwidth is greater than 20 dB at an input power level of -32 dBm. This signal-to-noise ratio was measured in an IF bandwidth of 175 MHz and includes the contribution from the IF amplifier. The sampler, which is made on alumina using MIC techniques, has an integrated impulse generator driven with a sinusoidal local oscillator of only 20 dBm over the frequency band of 250-350 MHz. The IF signal is in the 10-175-MHz band. The RF input VSWR is better than 2:1 up to 20 GHz, and the oscillator to RF breakthrough is better than -58 dBm (-78 dBc) when driven with a local oscillator of 20 dBm. This unusually low leakage was achieved by using the active isolator prior to the sampling circuit     

Minimum required power for carrier recovery at optical frequencies

The purpose of this study is to evaluate the minimum optical power required to achieve carrier recovery with arms phase error of 10°. This value corresponds to a degradation of about half a decibel for a coherent communication system using BPSK modulation. Two basic carrier recovery configurations were selected for this study. One uses an injection-locked oscillator; the other utilizes a phase-locked loop. The local source for both circuits is a laser providing 4 mW at 1.5 μm and having a full 3-dB linewidth of 20 MHz. The results show that the carrier recovery requirement can be achieved with a phase-locked loop receiving an unmodulated signal of -50 dBm. The minimum required power increases to a least -26 dBm for an injection-locked oscillator. A reduction of the sources linewidth by a given factor will decrease the minimum required power by the same amount.