流体静压力下应变闪锌矿(111)取向GaN/AlGaN量子阱中受屏蔽激子的结合能

结合变分法与自洽计算方法研究了流体静压力下应变闪锌矿(111)取向GaN/AlχGa1-χN量子阱中受电子-空穴气体屏蔽的激子结合能.计算中,考虑了沿(111)取向生长多层结构时存在压电极化引起的内建电场.计算结果表明,考虑压力对双轴及单轴应变的调制以及禁带宽度、有效质量和介电常数等参数的压力效应时,激子结合能随压力的增大近似线性增加;且当电子-空穴气体密度大时,这一效应更加显著.当给定压力时,随着电子.空穴气面密度的增加,激子结合能先缓慢增加,但当密度达到大约1011cm-2时结合能开始迅速衰减.此外,当减小垒的厚度时,由于内建电场减弱,激子结合能显著增加.     

GaN/GaAlN宽量子阱的二类激子特征

考虑了内建电场的影响,用变分法计算了GaN/GaAlN量子阱(QW)的电子子带和激子结合能.结果表明,对于阱宽较大情形,电子和空穴高度局域在QW边沿附近.内建电场造成的电子空穴空间的较大分离使QW激子表现出二类阱特征.重空穴基态结合能对Al浓度变化不敏感.     

耦合ZnO/MgxZn1-xO量子点中的激子态和带间光跃迁

在有效质量近似和变分原理的基础上,考虑量子点的三维约束效应和内建电场.研究了ZnO/MgxZn1-xO0耦合量子点中激子结合能、带间光跃迁能以及电子-空穴复合率随量子点结构参数(量子点高度和势垒层厚度)的变化.结果表明:激子结合能、带间光跃迁能和电子-空穴复合率随量子点高度或势垒层厚度的增加而降低.     

GaN／GaAIN宽量子阱的二类激光特征

考虑了内建电场的影响，用变分法计算了GaN/GaAIN量子阱（QW）的电子子带和激子结合能。结果表明，对于阱宽较大情形，电子和空穴高度局域在QW边沿附近。内建电场造成的电子空穴空间的较大分离使QW激子表现出二类阱特征，重空穴基态结合能对Al浓度变化不敏感。     

Al含量对GaN/Alx Ga1-x N量子点中激子态的影响

利用有效质量方法和变分原理,考虑内建电场和量子点的三维约束效应,研究了Al含量对局域在GaN/AlxGa1xN量子点中激子性质的影响.结果表明,随着Al含量的增加,GaN/AlxGa1-xN异质界面处的导带不连续性增强,势垒变高,载流子受到的约束增强,激子结合能增加,电子-空穴的复合率先增大后减小,且存在最大值.对给定体积的量子点,随其高度的变化激子结合能存在最大值,相应的电子-空穴被最有效约束,激子态最稳定.     

Al含量对GaN/AlxGa1－xN量子点中激子态的影响

利用有效质量方法和变分原理，考虑内建电场和量子点的三维约束效应，研究了Al含量对局域在GaN/AlxGa1－xN量子点中激子性质的影响．结果表明，随着Al含量的增加，GaN/AlxGa1－xN异质界面处的导带不连续性增强，势垒变高，载流子受到的约束增强，激子结合能增加，电子空穴的复合率先增大后减小，且存在最大值．对给定体积的量子点，随其高度的变化激子结合能存在最大值，相应的电子空穴被最有效约束，激子态最稳定．     

耦合GaN/AlxGa1-xN量子点中的激子特性

在有效质量近似下，运用变分方法，考虑到量子点内电子和空穴的三维束缚以及由压电极化和自发极化所引起的内建电场，对圆柱型耦合GaN量子点的光学性质及激子态做了研究。给出了激子结合能Eb、量子点发光波长λ、电子-空穴复合率和量子点高度L^GaN以及势垒层厚度L^AlGaN之间的函数关系。结果表明，量子点高度LG^GaN、势垒层厚度L^AlGaN的增加将导致激子结合能、电子-空穴复合率的降低，耦合量子点发光波长的增加。     

极性三元混晶中的Wannier激子结合能

在无序元胞孤立位移(MREI)模型下．考虑激子与混晶中的两支光学声子的相互作用,利用变分法计算了极性三元混晶(TMCs)中的Wannier激子的结合能。数值计算给出几种混晶材料的结合能随组份x的变化关系。讨论了混晶中的两支光学声子对激子结合能的贡献。结果表明,当电子和空穴有效质量相差较大时,电声子相互作用对激子结合能有着重要的贡献,声子对结合能的影响随混晶组份非线性变化的。同时讨论了有效声子近似(EPMA)在计算激子结合能时的适用范围。     

势阱形状对电场下量子阱子带和激子能移的影响

在束缚态近似下,用级数解法求解电场下各种不同形状GaAs/GaAlAs量子阱中电子和空穴子带,进一步采用变分方法得到激子结合能.由此,我们首次得到电场下由抛物阱至方位阱子带和激子峰能移的变化图象.在考虑GaAs/GaAlAs量子阱形状影响的基础上,我们计算所得结果与实验吻合得很好.     

GaN基量子阱激子结合能和激子光跃迁强度

采用变分法,计算了GaN基量子阱中激子结合能和激子光跃选强度。计算结果表明,GaN基量子阱中激子结合能为10－55meV,大于体材料中激子结合能,并随着阱宽减小而增加,在临界阱宽处达到最大。结间带阶同样对激子结合能有着较大的影响,更大带阶对应更大的结合能。同时量子限制效应增加了电子空穴波函数空间重叠,因此加强了激子光跃迁振子强度,导致GaN/AlN量子阱中激子光吸收明显强于体材料中激子光吸收。     

Pressure influence on bound polarons in a strained wurtzite GaN/AlxGa1-xN heterojunction under an electric field

The binding energies of bound polarons near the interface of a strained wurtzite GaN/AlxGa1-xN heterojunction are studied by using a modified LLP variational method and a simplified coherent potential approximation under hydrostatic pressure and an external electric field.Considering the biaxial strain due to lattice mismatch or epitaxial growth,the uniaxial strain effects and the influences of the electron-phonon interaction as well as impurity-phonon interaction including the effects of interface-optical phonon modes and half-space phonon modes,the binding energies as functions of pressure,the impurity position,areal electron density and the phonon effect on the Stark energy shift are investigated.The numerical result shows that the contributions from the interface optical phonon mode with higher frequency and the LO-like half space mode to the binding energy and the Stark energy shift are important and obviously increase with increasing hydrostatic pressure,whereas the interface optical phonon mode with lower frequency and the TO-like half space mode are extremely small and are insensitive to the impurity position and hydrostatic pressure.It is also shown that the conductive band bending should not be neglected.     

电场下应变纤锌矿GaN/AlxGa1-xN异质结中束缚极化子的压力效应

对应变纤锌矿GaN/AlxGa1-xN异质结系统,引入简化相干势近似,利用改进的LLP变换和变分法计算了流体静压力和外场作用下束缚极化子的结合能。考虑由于晶格失配所致的单、双轴应变以及界面光学声子模和半空间光学声子模与电子和杂质之间的相互作用,讨论了结合能随压力、杂质位置和流体静压力的变化关系以及声子对于斯塔克能量移动的影响。数值计算结果表明,高频支界面声子模和类LO半空间声子模对于结合能和斯塔克能移的影响是主要的,且随压力的增加而显著增大,而低频支界面声子模和类TO声子模的作用则很小,且对于杂质位置和流体静压力的变化不敏感。计算还表明,导带的弯曲也不容忽视。     

量子阱结构中的等效宽度分析

在有效质量近似下,分析了有限深势阱的电子基态能级,并和有相同能级的无限深势阱模型作比较,用数值方法得到了不同电场下两者之间的阱宽的关系 ,首次得出经验公式,发现结果与前人的实验和理论结果吻合得很好.分析了两种模型下的波函数和结合能,证实了有外加电场时采用零电场下的等效宽度的合理性.     

压力下屏蔽对有限深量子阱中施主结合能的影响

考虑电子有效质量、材料介电常数及禁带宽度随流体静压力的变化,以及准二维电子气对杂质库仑势的屏蔽影响,利用变分法讨论有限深量子阱中的施主杂质态能级.对GaAs/AlxGa1-xAs量子阱系统中的杂质态结合能进行了数值计算,给出结合能随铝组分、阱宽和压力的变化关系,并讨论了有无屏蔽时的区别.结果表明,屏蔽效应随着压力增加而增加且显著降低杂质态的结合能.     

Gas selectivity of SILAR grown CdS nano-bulk junction

Nano-particles of cadmium sulphide were deposited on cleaned copper substrate by an automated sequential ionic layer adsorption reaction (SILAR) system.The grown nano-bulk junction exhibits Schottky diode behavior.The response of the nano-bulk junction was investigated under oxygen and hydrogen atmospheric conditions.The gas response ratio was found to be 198％ for Oxygen and 34％ for Hydrogen at room temperature.An increase in the operating temperature of the nano-bulk junction resulted in a decrease in their gas response ratio.A logarithmic dependence on the oxygen partial pressure to the junction response was observed,indicating a Temkin isothermal behavior.Work function measurements using a Kelvin probe demonstrate that the exposure to an oxygen atmosphere fails to effectively separate the charges due to the built-in electric field at the interface.Based on the benefits like simple structure,ease of fabrication and response ratio the studied device is a promising candidate for gas detection applications.     

Type-II Ge/Si quantum dots

The electronic structure of spatially indirect excitons, multiparticle excitonic complexes, and negative photoconductivity in arrays of Ge/Si type-II quantum dots (QDs) are considered. A comparison is made with the well-known results for type-II III-V and II-VI QD heterostructures. The following fundamental physical phenomena are observed in the structures under study: an increase in the exciton binding energy in QDs as compared with that for free excitons in homogeneous bulk materials, a blue shift in the excitonic transitions during the generation of multiparticle complexes (charged excitons, biexcitons), and the capture of equilibrium carriers to localized states induced by the electric ield of charged QDs.     

压力下应变闪锌矿(111)取向GaN/AlGaN异质结中界面极化子的温度效应

The properties of interface polarons in a strained （111）-oriented zinc-blende GaN/AlxGa1-xN heterojunction at finite temperature under hydrostatic pressure are investigated by adopting a modified LLP variational method and a simplified coherent potential approximation. Considering the effect of hydrostatic pressure on the bulk longitudinal optical phonon mode, two branches interface-optical phonon modes and strain, respectively, we calculated the polaronic self-trapping energy and effective mass as functions of temperature, pressure and areal electron density. The numerical result shows that both of them near linearly increase with pressure but the self-trapping energies are nonlinear monotone increasing with increasing of the areal electron density. They are near constants below a range of temperature whereas decrease dramatically with increasing temperature beyond the range. The contributions from the bulk longitudinal optical phonon mode and one branch of interface optical phonon mode with higher frequency are important whereas the contribution from another branch of interface optical phonon mode with lower frequency is extremely small so that it can be neglected in the further discussion.     

Temperature effects on interface polarons in a strained (111)-oriented zinc-blende GaN/AlGaN heterojunction under pressure

The properties of interface polarons in a strained (111)-oriented zinc-blende GaN/A1xGa1-xN heterojunc-tion at finite temperature under hydrostatic pressure are investigated by adopting a modified LLP variational method and a simplified coherent potential approximation. Considering the effect of hydrostatic pressure on the bulk longitu-dinal optical phonon mode, two branches interface-optical phonon modes and strain, respectively, we calculated the polaronic self-trapping energy and effective mass as functions of temperature, pressure and areal electron density. The numerical result shows that both of them near linearly increase with pressure but the self-trapping energies are nonlinear monotone increasing with increasing of the areal electron density. They are near constants below a range of temperature whereas decrease dramatically with increasing temperature beyond the range. The contributions from the bulk longitudinal optical phonon mode and one branch of interface optical phonon mode with higher frequency are important whereas the contribution from another branch of interface optical phonon mode with lower frequency is extremely small so that it can be neglected in the further discussion.